DE69309375D1 - Hochglanzpolierbares Siliziumkarbid mit hoher thermischer leitfähigkeit, Verfahren zur Herstellung und Anwendung - Google Patents

Hochglanzpolierbares Siliziumkarbid mit hoher thermischer leitfähigkeit, Verfahren zur Herstellung und Anwendung

Info

Publication number
DE69309375D1
DE69309375D1 DE69309375T DE69309375T DE69309375D1 DE 69309375 D1 DE69309375 D1 DE 69309375D1 DE 69309375 T DE69309375 T DE 69309375T DE 69309375 T DE69309375 T DE 69309375T DE 69309375 D1 DE69309375 D1 DE 69309375D1
Authority
DE
Germany
Prior art keywords
manufacturing
thermal conductivity
silicon carbide
high thermal
application process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69309375T
Other languages
English (en)
Other versions
DE69309375T2 (de
Inventor
Michael A Pickering
Lee E Burns Lee E Burns
Jitendra S Goela Jitendr Goela
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CVD Inc
Original Assignee
CVD Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CVD Inc filed Critical CVD Inc
Application granted granted Critical
Publication of DE69309375D1 publication Critical patent/DE69309375D1/de
Publication of DE69309375T2 publication Critical patent/DE69309375T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
DE69309375T 1992-07-31 1993-07-30 Hochglanzpolierbares Siliziumkarbid mit hoher thermischer leitfähigkeit, Verfahren zur Herstellung und Anwendung Expired - Lifetime DE69309375T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92307792A 1992-07-31 1992-07-31
US07/959,880 US5374412A (en) 1992-07-31 1992-10-13 Highly polishable, highly thermally conductive silicon carbide

Publications (2)

Publication Number Publication Date
DE69309375D1 true DE69309375D1 (de) 1997-05-07
DE69309375T2 DE69309375T2 (de) 1997-07-10

Family

ID=27129861

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69309375T Expired - Lifetime DE69309375T2 (de) 1992-07-31 1993-07-30 Hochglanzpolierbares Siliziumkarbid mit hoher thermischer leitfähigkeit, Verfahren zur Herstellung und Anwendung

Country Status (9)

Country Link
US (3) US5374412A (de)
EP (1) EP0588479B1 (de)
JP (1) JPH06199513A (de)
KR (1) KR970002892B1 (de)
CA (1) CA2099833C (de)
DE (1) DE69309375T2 (de)
HK (1) HK119997A (de)
IL (1) IL106417A (de)
SG (1) SG52732A1 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW337513B (en) * 1992-11-23 1998-08-01 Cvd Inc Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof
US6236542B1 (en) 1994-01-21 2001-05-22 International Business Machines Corporation Substrate independent superpolishing process and slurry
US6077619A (en) * 1994-10-31 2000-06-20 Sullivan; Thomas M. Polycrystalline silicon carbide ceramic wafer and substrate
US5850329A (en) * 1994-10-31 1998-12-15 Sullivan; Thomas Milton Magnetic recording device components
US6309766B1 (en) 1994-10-31 2001-10-30 Thomas M. Sullivan Polycrystalline silicon carbide ceramic wafer and substrate
US5623386A (en) * 1994-10-31 1997-04-22 Sullivan; Thomas M. Magnetic recording component
US5618594A (en) * 1995-04-13 1997-04-08 Cvd, Incorporated Composite thermocouple protection tubes
US5923511A (en) * 1995-05-26 1999-07-13 International Business Machines Corporation Directly contactable disk for vertical magnetic data storage
US5677230A (en) * 1995-12-01 1997-10-14 Motorola Method of making wide bandgap semiconductor devices
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
US5741445A (en) 1996-02-06 1998-04-21 Cvd, Incorporated Method of making lightweight closed-back mirror
US5683028A (en) * 1996-05-03 1997-11-04 Cvd, Incorporated Bonding of silicon carbide components
DE19730770C2 (de) * 1996-08-06 2001-05-10 Wacker Chemie Gmbh Porenfreie Sinterkörper auf Basis von Siliciumcarbid, Verfahren zu ihrer Herstellung und ihre Verwendung als Substrate für Festplattenspeicher
JP2918860B2 (ja) * 1997-01-20 1999-07-12 日本ピラー工業株式会社 鏡面体
JPH1179846A (ja) * 1997-09-01 1999-03-23 Tokai Carbon Co Ltd 炭化珪素成形体
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US6231923B1 (en) 1998-08-17 2001-05-15 Tevtech Llc Chemical vapor deposition of near net shape monolithic ceramic parts
US6464912B1 (en) 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition
JP2001048649A (ja) * 1999-07-30 2001-02-20 Asahi Glass Co Ltd 炭化ケイ素およびその製造方法
EP1184355B1 (de) 2000-02-15 2006-12-13 Toshiba Ceramics Co., Ltd. Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern
US6939821B2 (en) * 2000-02-24 2005-09-06 Shipley Company, L.L.C. Low resistivity silicon carbide
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide
US6560064B1 (en) * 2000-03-21 2003-05-06 International Business Machines Corporation Disk array system with internal environmental controls
US6797085B1 (en) * 2000-09-28 2004-09-28 Intel Corporation Metallurgically enhanced heat sink
US6811761B2 (en) * 2000-11-10 2004-11-02 Shipley Company, L.L.C. Silicon carbide with high thermal conductivity
US8202621B2 (en) * 2001-09-22 2012-06-19 Rohm And Haas Company Opaque low resistivity silicon carbide
US20040011464A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Promotion of independence between degree of dissociation of reactive gas and the amount of ionization of dilutant gas via diverse gas injection
US20040112190A1 (en) * 2002-11-26 2004-06-17 Hollis Michael Chad Bevel angle locking actuator and bevel angle locking system for a saw
US20040173597A1 (en) * 2003-03-03 2004-09-09 Manoj Agrawal Apparatus for contacting gases at high temperature
JP4064315B2 (ja) * 2003-08-20 2008-03-19 信越化学工業株式会社 誘導結合プラズマトーチ及び元素分析装置
US20050123713A1 (en) 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
US8114505B2 (en) 2003-12-05 2012-02-14 Morgan Advanced Ceramics, Inc. Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
CN1973171B (zh) * 2004-08-10 2010-05-05 揖斐电株式会社 烧制炉及利用该烧制炉制造陶瓷部件的方法
US7972441B2 (en) * 2005-04-05 2011-07-05 Applied Materials, Inc. Thermal oxidation of silicon using ozone
TWI327761B (en) * 2005-10-07 2010-07-21 Rohm & Haas Elect Mat Method for making semiconductor wafer and wafer holding article
EP1793021A3 (de) * 2005-12-02 2009-01-14 Rohm and Haas Electronic Materials LLC Verfahren zur Behandlung von Halbleitern unter Verwendung von einem Gegenstand aus Silizium Karbid
JP2007329476A (ja) * 2006-06-02 2007-12-20 Rohm & Haas Electronic Materials Llc フィレット半径結合部を有する装置
US20080007555A1 (en) * 2006-07-10 2008-01-10 Vrba Joseph A Dynamic plot on plot displays
TWI361469B (en) * 2007-03-09 2012-04-01 Rohm & Haas Elect Mat Chemical vapor deposited silicon carbide articles
KR101012082B1 (ko) * 2007-06-25 2011-02-07 데이또꾸샤 가부시키가이샤 가열 장치 및 이것을 채용한 기판 처리 장치 및 반도체장치의 제조 방법 및 절연체
JP4523661B1 (ja) * 2009-03-10 2010-08-11 三井造船株式会社 原子層堆積装置及び薄膜形成方法
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
JP4919367B1 (ja) * 2011-08-02 2012-04-18 株式会社シンクロン 炭化珪素薄膜の成膜方法
US8753985B2 (en) * 2012-01-17 2014-06-17 Applied Materials, Inc. Molecular layer deposition of silicon carbide
US9132619B2 (en) * 2012-04-05 2015-09-15 General Atomics High durability joints between ceramic articles, and methods of making and using same
JP5906318B2 (ja) * 2012-08-17 2016-04-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
KR101585924B1 (ko) 2014-02-04 2016-01-18 국방과학연구소 탄화규소 써멀 화학기상증착장치의 가스반응로
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10100409B2 (en) * 2015-02-11 2018-10-16 United Technologies Corporation Isothermal warm wall CVD reactor
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
CN110579105B (zh) * 2018-06-08 2021-06-08 北京北方华创微电子装备有限公司 氧化炉
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
KR102104799B1 (ko) 2019-08-13 2020-05-04 주식회사 바이테크 대용량 cvd 장치
KR102297741B1 (ko) 2019-08-28 2021-09-06 주식회사 바이테크 대용량 cvd 장치
CN113479889B (zh) * 2021-08-20 2022-12-09 中电化合物半导体有限公司 一种碳化硅粉料的合成方法
CN117401979B (zh) * 2023-11-02 2024-09-10 湖南德智新材料有限公司 一种制备碳化硅陶瓷材料的方法、应用及碳化硅陶瓷材料

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549413A (en) * 1969-07-28 1970-12-22 Gen Technologies Corp Reinforcing filaments comprising coated tungsten wires
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
EP0126790B1 (de) * 1983-05-27 1986-09-03 Ibm Deutschland Gmbh Zusammengesetzte Magnetplatte
US4647494A (en) * 1985-10-31 1987-03-03 International Business Machines Corporation Silicon/carbon protection of metallic magnetic structures
US4861533A (en) * 1986-11-20 1989-08-29 Air Products And Chemicals, Inc. Method of preparing silicon carbide capillaries
JPH0222473A (ja) * 1988-07-08 1990-01-25 Sumitomo Metal Mining Co Ltd セラミック材の製造方法及びその製造用高温反応炉
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide
JP2627792B2 (ja) * 1988-11-22 1997-07-09 日本パイオニクス株式会社 水素ガスの精製装置
JPH02265011A (ja) * 1989-04-06 1990-10-29 Sony Corp 磁気記録媒体
JP2805160B2 (ja) * 1989-06-21 1998-09-30 東洋炭素株式会社 炭素質成形断熱体
US5150507A (en) * 1989-08-03 1992-09-29 Cvd Incorporated Method of fabricating lightweight honeycomb structures
US4997678A (en) * 1989-10-23 1991-03-05 Cvd Incorporated Chemical vapor deposition process to replicate the finish and figure of preshaped structures
US5071596A (en) * 1989-10-23 1991-12-10 Cvd Incorporated Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
JPH03252307A (ja) * 1990-02-27 1991-11-11 Showa Denko Kk 多結晶炭化珪素
US5043773A (en) * 1990-06-04 1991-08-27 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates
US5190890A (en) * 1990-06-04 1993-03-02 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same
CA2058809A1 (en) * 1991-01-07 1992-07-08 Jitendra S. Goela Chemical vapor deposition silicon and silicon carbide having improved optical properties
JPH04258810A (ja) * 1991-02-13 1992-09-14 Sony Corp 磁気記録媒体

Also Published As

Publication number Publication date
DE69309375T2 (de) 1997-07-10
CA2099833A1 (en) 1994-02-01
KR940002164A (ko) 1994-02-16
EP0588479B1 (de) 1997-04-02
IL106417A (en) 1996-09-12
KR970002892B1 (ko) 1997-03-12
US5474613A (en) 1995-12-12
IL106417A0 (en) 1993-11-15
SG52732A1 (en) 1998-09-28
US5374412A (en) 1994-12-20
EP0588479A1 (de) 1994-03-23
JPH06199513A (ja) 1994-07-19
HK119997A (en) 1997-09-05
US5465184A (en) 1995-11-07
CA2099833C (en) 1997-11-25

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Representative=s name: MUELLER-BORE & PARTNER, PATENTANWAELTE, EUROPEAN PAT