CN108727035A - 陶瓷板以及电子装置 - Google Patents
陶瓷板以及电子装置 Download PDFInfo
- Publication number
- CN108727035A CN108727035A CN201810037497.2A CN201810037497A CN108727035A CN 108727035 A CN108727035 A CN 108727035A CN 201810037497 A CN201810037497 A CN 201810037497A CN 108727035 A CN108727035 A CN 108727035A
- Authority
- CN
- China
- Prior art keywords
- ceramic wafer
- silicate
- crystalline
- silicon nitride
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/587—Fine ceramics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
- C04B2235/3445—Magnesium silicates, e.g. forsterite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/85—Intergranular or grain boundary phases
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Ceramic Products (AREA)
Abstract
本发明提供一种陶瓷板,具备:氮化硅结晶相,包含多个氮化硅结晶以及该氮化硅结晶间的晶界;和硅酸盐相,包含最大粒径比所述氮化硅结晶小的镁硅酸盐结晶以及稀土类硅酸盐结晶并且位于所述晶界。
Description
技术领域
本发明涉及包含陶瓷材料的陶瓷板以及电子装置。
背景技术
作为搭载功率半导体元件等的电子部件的绝缘板,使用由氮化硅质烧结体构成的陶瓷板。由于氮化硅质烧结体的机械性强度以及热传导率较大,因此被用作为上述绝缘板。在氮化硅质烧结体中,钙、镁、铝、钇等的氧化物被用作为烧结助剂(例如参照专利文献1及2)。
搭载于绝缘板的电子部件经由绝缘板等而与金属制的散热体热连接,经由散热体而向外部散热。此外,该电子部件经由引线端子等的导电性连接材料而与外部的电气电路电连接。
在先技术文献
专利文献
专利文献1:JP特开昭60-145965号公报
专利文献2:JP特开2007-335397号公报
发明内容
本发明的一种方式的陶瓷板具备:氮化硅结晶相,包含多个氮化硅结晶以及该氮化硅结晶间的晶界;和硅酸盐相,包含最大粒径比所述氮化硅结晶小的镁硅酸盐结晶以及稀土类硅酸盐结晶并且位于所述晶界。
本发明的一个方式的电子装置包含:上述构成的陶瓷板;和与该陶瓷板热连接的电子部件。
附图说明
图1是将本发明的实施方式的陶瓷板的一个例子中的主要部分放大表示的剖视图。
图2是表示本发明的实施方式的电子装置的一个例子的剖视图。
图3是表示图1的变形例的剖视图。
图4是表示图2的变形例的剖视图。
-符号说明-
1…氮化硅结晶相
11…氮化硅结晶
12…晶界
2…硅酸盐相
21…镁硅酸盐结晶
21a…最小粒径的镁硅酸盐结晶
22…稀土类硅酸盐结晶
22a…最小粒径的稀土类硅酸盐结晶
3…陶瓷板
4…电子部件
5…散热体
6…引线端子
6A…引线端子(引线框)
7…接合引线
8…模制树脂
30…电子装置
具体实施方式
参照附图来对本发明的实施方式的陶瓷板以及电子装置进行说明。另外,以下的说明中的上下的区别是为了说明上的方便,并不限定实际使用陶瓷板或者电子装置时的上下。此外,以下的说明中的各种热传导率为室温~500℃左右下的值。此外,以下的说明中的热传导率能够通过基于非稳定法的各种测定装置来进行测定。
图1是将本发明的实施方式的陶瓷板的一个例子中的主要部分放大表示的剖视图。图2是对图1中表示主要部分的陶瓷板以及包含该陶瓷板的电子装置的整体进行表示的剖视图。通过存在于氮化硅结晶相1与氮化硅结晶相1之间的硅酸盐相2来基本构成陶瓷板3。此外,陶瓷板3与电子部件4相互热连接来基本构成电子装置30。图2所示的电子装置30是本发明的实施方式的电子装置的一个例子。
陶瓷板3与电子部件4的热连接,是指两者之间的热传导率约为65W/(m·K)以上的状态。陶瓷板3与电子部件4相互直接接合的形态也包含于两者相互热连接的状态。后面对陶瓷板3内的构成以及电子部件4相对于陶瓷板3的搭载以及热连接的详细进行叙述。
陶瓷板3例如是具有矩形形状的上表面以及下表面的平板状的部件。陶瓷板3的上表面是搭载电子部件4的部分。在该上表面的中央部等,搭载电子部件4。此外,陶瓷板3的下表面是与散热体5连接的部分。陶瓷板3的下表面与散热体5对置并接合。由此,构成从电子部件4通过陶瓷板3以及散热体5而向外部散热的导热路径。
作为电子部件4,举例:半导体集成电路元件、功率半导体元件、LED(发光二极管)或者CCD(电荷耦合元件)等光半导体元件、电流传感器元件或者磁传感器元件等传感器元件、在半导体基板的表面形成微小的电子机械机构而成的微型机械(所谓的MEMS元件)等各种电子元件。此外,电子部件4可以包含多种,也可以包含压电元件、电容元件以及电阻器等所谓的被动部件。
电子部件4相对于陶瓷板3的搭载以及接合例如通过金-锡钎焊材料等低熔点钎焊材料、包含有机树脂(粘接剂)的接合材料或者包含玻璃的接合材料等接合材料来进行。例如,使电子部件4的下表面经由接合材料(未图示)而定位搭载于陶瓷板3的上表面的规定位置(搭载部)。然后,通过电气炉等加热用机器将接合材料加热到规定的温度。通过这些工序,能够将电子部件4与陶瓷板3的上表面接合。
在电子部件4相对于陶瓷板3的搭载中,如前面所述,陶瓷板3与电子部件4被相互热连接。为此,例如可以使用金-锡钎焊材料等热传导率约为65W/(m·K)以上的接合材料。该情况下的接合材料的厚度例如被设定为约100μm左右。此外,在将例如树脂粘接剂(热传导率约为20~23W/(m·K)左右)用作为接合材料时,该接合材料的厚度约为30μm以下即可。
如上所述,陶瓷板3作为用于搭载并固定电子部件4的基体而发挥作用。固定于陶瓷板3的电子部件4例如与引线端子6电连接,经由引线端子6来与外部电气电路(未图示)电连接。
引线端子6例如由铁-镍合金、铁-镍-钴合金、铜或者铜系合金等金属材料形成。由金属材料构成的引线端子6例如是细长的长方形(带状)的部件,从接近于陶瓷板3的部分向外侧配置。在该情况下,例如也可以根据电子部件4的电极数,多个引线端子6在宽度方向并排排列。此外,例如图3所示,多个引线端子6被框状的金属部件(框)连结并一体化。引线框6A也可以被用作为引线端子6。另外,图3是表示图2的变形例的剖视图。在图3中,对与图2相同的部位付与相同的符号。在该情况下,引线框6A也可以具有位于陶瓷板3的上表面的中央的平板状的部分。此外,也可以在该平板状的部分引线框6A的一部分搭载电子部件4。引线框6A之中平板状的部分和与外部连接的带状的部分例如通过悬挂引线(未图示)来相互连结。此时的引线框6A也作为构成从电子部件4到散热体5的导热路径的一部分的导热部件而发挥作用。
电子部件4与引线端子6的电连接例如经由接合引线7等导电性连接材料而进行。在电子部件4与引线端子6经由接合引线7而电连接的状态下,从电子部件4到陶瓷板3的上表面,包含接合引线7地被模制树脂8覆盖,电子部件4被密封。由此,陶瓷板3与电子部件4热连接,并且形成从电子部件4向外部的散热以及电连接容易的电子装置30。
模制树脂8例如由包含环氧树脂或者硅酮树脂等树脂材料的材料形成。模制树脂8也可以在环氧树脂等树脂材料中包含由二氧化硅粒子等无机材料构成的填料粒子。填料粒子例如为了调整模制树脂8的热膨胀率(降低与陶瓷板3的热膨胀率的差)、机械性强度或者外部空气中的水分的透过性等特性而被添加。
陶瓷板3也作为对从如所述那样搭载的电子部件4向外部的散热进行促进的导热路径的一部分而发挥作用。在该情况下,陶瓷板3构成用于将被搭载的电子部件4与散热片等金属制的散热体5热连接的导热路径的一部分。为此,陶瓷板3的热传导率较高更合适。此外,陶瓷板3的厚度较小(较薄)更合适。在减小陶瓷板3的厚度时,为了确保作为包含陶瓷板3的电子装置30的机械性强度,陶瓷板3由机械性强度较高的材料构成更合适。本实施方式中的陶瓷板3如前面所述,具有对于这种热传导率以及机械性强度的提高有利的构成。
也就是说,实施方式的陶瓷板3包含氮化硅结晶相1,该氮化硅结晶相1包含多个氮化硅结晶11以及这些氮化硅结晶11之间的晶界12。此外,该陶瓷板3具备位于晶界12的硅酸盐相2。硅酸盐相2包含最大粒径小于氮化硅结晶11的镁硅酸盐结晶21以及稀土类硅酸盐结晶22。即,镁硅酸盐结晶21的最大粒径比氮化硅结晶11的最大粒径小。稀土类硅酸盐结晶22的最大粒径也比氮化硅结晶11的最大粒径小。此外,本实施方式的电子装置30如前面所述,包含上述构成的陶瓷板3和与陶瓷板3热连接的电子部件4。
根据本实施方式的陶瓷板3,由于是上述构成,因此在相邻的氮化硅结晶11之间,经由存在于这些氮化硅结晶11之间的晶界12的硅酸盐相2而有效地进行热传导。此外,氮化硅结晶11间的烧结性提高。因此,能够提供一种热传导性以及机械性强度提高了的陶瓷板3。此外,根据本实施方式的电子装置30,由于包含上述构成的陶瓷板3,因此能够提供一种向外部的散热性的提高容易的电子装置30。
在该情况下,由于镁硅酸盐结晶21以及稀土类硅酸盐结晶22的粒径均比氮化硅结晶11小,因此硅酸盐相2也容易位于氮化硅结晶11间的较窄的晶界12。氮化硅结晶11的最大粒径例如约为3~4μm左右。此外,镁硅酸盐结晶21以及稀土类硅酸盐结晶22的最大粒径例如约为0.8~1μm左右。
例如,实施方式的陶瓷板3的热传导率约为70W/(m·K)以上。此外,实施方式的陶瓷板3的机械性强度例如是弯曲强度,在三点弯曲试验中约为700MPa以上。因此,能够有效地减少构成从电子部件4到散热体5的导热路径的一部分的陶瓷板3中的热阻抗。因此,能够提供一种散热性较高的电子装置30的制作容易的陶瓷板3。此外,能够提供一种散热性较高的电子装置30。
陶瓷板3中的氮化硅结晶相1是陶瓷板3的骨架部分,具有将陶瓷板3维持为一定的形状以及尺寸的功能。换言之,氮化硅结晶相1是陶瓷板3的主成分,陶瓷板3通过氮化硅质烧结体而基本形成。
氮化硅结晶相1中的多个氮化硅结晶11是基本构成氮化硅结晶相1的部分。也就是说,多个氮化硅结晶11之中相邻的结晶彼此相互烧结,陶瓷板3中的一定的机械性强度被确保。此外,热量在相邻的氮化硅结晶11之间依次传导,进行作为陶瓷板3的基本热传导。
氮化硅结晶相1中的晶界12存在于相邻的氮化硅结晶11之间,使作为多晶体的上述氮化硅质烧结体中的氮化硅结晶11的配置容易。形状以及尺寸相互不同的多个氮化硅结晶11通过将晶界12夹在之间,来形成多晶体。
另外,陶瓷板3中的氮化硅结晶11的含有率例如约为80~97质量%左右。通过氮化硅结晶11的含有率为80质量%左右以上,作为陶瓷板3的热传导率以及机械性强度的确保变得容易。此外,通过氮化硅结晶11的含有率为97质量%以下,作为烧结助剂的硅酸盐相2的有效分散变得容易,对烧结性的提高有利。
陶瓷板3中的硅酸盐相2具有提高陶瓷板3的热传导率以及机械性强度的功能。也就是说,通过硅酸盐相2位于晶界12内,从而相邻的氮化硅结晶11彼此之中夹着晶界12而对置的彼此相互经由硅酸盐相2而有效地热以及机械性连接。
作为构成硅酸盐相2的成分,举例镁硅酸盐(硅酸镁)、锰硅酸盐(硅酸锰)、钼硅酸盐以及铒、钇等稀土类的硅酸盐(silicate)等。在图1所示的例子中,主要镁硅酸盐结晶21和铒硅酸盐结晶22构成硅酸盐相2。硅酸盐相2除了硅酸盐以外的成分,例如也可以稍微含有氧化物等。
在该情况下,硅酸盐相2经由与氮化硅结晶11同样含有的硅(Si)成分,能够相对于氮化硅结晶11稳固地接合。此外,硅酸盐相2的例如镁硅酸盐等的热传导率约为60~80W/(m·K),热传导率也较大。例如,若是铒硅酸盐结晶等的稀土类硅酸盐结晶以及以镁硅酸盐结晶作为主成分包含的硅酸盐相2的情况,则硅酸盐相2的热传导率约为60W/(m·K)以上。
陶瓷板3中的硅酸盐相2的含有率例如为3~20质量%左右即可。在陶瓷板3中的硅酸盐相2的含有率为3质量%以上时,在氮化硅结晶相1中的多个晶界12的每一个有效地配置硅酸盐相2。因此,即使在相邻的氮化硅结晶11彼此未直接烧结的界面以外,也能够通过硅酸盐相2来相互有效地热连接以及机械性连接。
此外,在陶瓷板3中的硅酸盐相2的含有率为20质量%以下时,在陶瓷板3内硅酸盐相2(镁硅酸盐结晶21或者铒硅酸盐结晶22)独立于氮化硅结晶11而形成结晶(未图示)的可能性被有效地降低。假设若这种硅酸盐的结晶单独存在,则其部分与氮化硅结晶11相比,热传导率较小。与此相对地,若是上述组成,则在陶瓷板3内产生热传导率较小的部分的可能性被有效地降低。因此,陶瓷板3中的硅酸盐相2的含有率例如为3~20质量%左右,则对于陶瓷板3的机械性强度以及热传导率的提高有利。
硅酸盐相2中的镁硅酸盐结晶21的含有率例如被设定为20~90质量%左右。镁硅酸盐结晶21的热传导率较大约为60W/(m·K)或者其以上。因此,若硅酸盐相2中的镁硅酸盐结晶21的含有率为20质量%以上,则对于作为氮化硅质烧结体即陶瓷板3的热传导率的提高有效。此外,若硅酸盐相2中的镁硅酸盐结晶21的含有率为90质量%以下,换言之,若硅酸盐相2中稀土类的硅酸盐结晶超过10质量%,则氮化硅质烧结体(陶瓷板3)中的烧结性提高。因此,对于陶瓷板3的机械性强度的提高有效。因此,若硅酸盐相2中的镁硅酸盐结晶21的含有率例如为20~90质量%左右,则对于陶瓷板3的机械性强度以及热传导率的提高有利。
在陶瓷板3中,镁硅酸盐结晶21和稀土类硅酸盐结晶22也可以例如图1以及图4所示的例子那样,位于多个晶界12之中相互不同的部分。另外,图4是表示图1的变形例的剖视图。在图4中,对与图1相同的部位付与相同的符号。此外,镁硅酸盐结晶21和稀土类硅酸盐结晶22也可以位于相互相同的晶界12。在镁硅酸盐结晶21和稀土类硅酸盐结晶22位于多个晶界12之中相互不同的部分的情况下,得到基于稀土类硅酸盐结晶22的氮化硅结晶11间的烧结性提高的效果,有利。此外,在多个晶界12中,能够通过镁硅酸盐结晶21来有效地得到氮化硅结晶11间的热传导性确保的效果。
图4是表示图1的变形例的剖视图,在图4中,对与图1相同的部位付与相同的符号。如图1以及图4所示,稀土类硅酸盐结晶22也可以包含最小粒径比镁硅酸盐结晶还小的铒硅酸盐结晶以及钇硅酸盐结晶的至少一种。在稀土类硅酸盐结晶22的最小粒径比镁硅酸盐结晶21的最小粒径还小的情况下,稀土类硅酸盐结晶22能够有效地位于氮化硅结晶11之间的晶界12内。换言之,稀土类硅酸盐结晶22能够位于较窄的晶界12,能够有效地提高相邻的氮化硅结晶11间的烧结性。由此,能够有效地提高陶瓷板3的机械性强度。
在图4所示的例子中,稀土类硅酸盐结晶22包含粒径比镁硅酸盐结晶21的粒径大的物质。在该情况下,若最小粒径的稀土类硅酸盐结晶22a的粒径比最小粒径的镁硅酸盐结晶21a的粒径小,也能够得到上述的烧结性的提高的效果。
镁硅酸盐结晶21以及稀土类硅酸盐结晶22的粒径能够通过使用了电子显微镜的陶瓷板3的剖面观察来测定。这些结晶的最小粒径为如上述那样测定的粒径之中的最小值。也可以进行多个剖面观察,求出最小粒径。
另外,氮化硅结晶11例如粒径约为0.5~4μm左右,平均粒径约为2.4μm。此外,此时,多个镁硅酸盐结晶21的最小粒径约为0.4~0.5μm左右。此外,多个稀土类硅酸盐结晶22的最小粒径约为0.2~0.3μm左右。
这种包含最小粒径比镁硅酸盐结晶21小的铒硅酸盐结晶以及钇硅酸盐结晶的至少一种的稀土类硅酸盐结晶22预先将作为烧结助剂而添加的铒硅酸盐材料粉碎,比氮化硅材料更微粉化即可。以下表示包含上述的粒径调整的陶瓷板3的制造方法的一个例子。
首先,通过碾磨等的粉碎手段来将氮化硅、二氧化硅、氧化镁、氧化铒、氧化钇等的原料粉末和有机溶剂、粘合剂粉碎并制作原料粉末。此时,混合到与各个材料相应的粒径,调制浆料。
接下来,通过刮刀法等的方法来将调制出的浆料成型为片状并制作带状的陶瓷生片。将制作出的陶瓷生片切断为适当的尺寸以及形状并制作多个片。然后,针对这些片,在印刷金属化墨水后,在上下层叠多个后,以约1400~1900℃的温度进行烧制。通过以上的工序,能够制作陶瓷板3。
如上所述,通过上述任意构成的陶瓷板3和与陶瓷板3热连接的电子部件4来构成电子装置30。电子部件4相对于陶瓷板3的搭载、固定能够如上述那样经由接合材料等来进行。此外,电子部件4能够经由引线端子6等而与外部电气电路电连接。
例如,在树脂成型用的金属模具内,设置搭载有电子部件4的陶瓷板3、通过接合引线7来与电子部件4电连接的引线端子6或者引线框6A,在金属模具内填充未固化的环氧树脂等的模制树脂用的树脂材料。然后,对未固化的树脂材料进行加热并使其固化。通过以上的工序,能够制作电子装置30。电子部件4搭载于陶瓷板3而成的电子装置30例如与散热片等的散热体5连接并向外部散热。散热体5与电子装置30的连接例如能够经由树脂材料等的粘接材料来进行。此外,也可以在陶瓷板3的下表面设置凸部分(未图示),通过凸部分的固定效果来提高电子装置30与散热体5的连接强度。
另外,本发明并不限定于以上的实施方式,在本发明的主旨的范围内能够进行各种变更。例如,也可以在引线等的露出的金属部分覆盖镍以及金等的镀层。
此外,也可以在电子部件4的上表面侧也相互热连接地配置陶瓷板3,来提高从电子部件4向外部的散热效果。在这种情况下,也可以通过模制树脂(未图示)来填充这些陶瓷板3之间,以使得在上下的陶瓷板3之间不产生缝隙(换句话说,热传导性小的空间)。
此外,陶瓷板3中含有的氮化硅结晶11间的晶界12不是必须为硅酸盐相2所存在的部位,也可以包含作为空隙而存在的部分。此外,也可以是硅酸盐相2以外的助剂成分(玻璃成分等)位于晶界12。
Claims (6)
1.一种陶瓷板,具备:
氮化硅结晶相,包含多个氮化硅结晶以及该氮化硅结晶间的晶界;和
硅酸盐相,包含最大粒径比所述氮化硅结晶小的镁硅酸盐结晶以及稀土类硅酸盐结晶并且位于所述晶界。
2.根据权利要求1所述的陶瓷板,其中,
所述硅酸盐相的含有率为3~20质量%。
3.根据权利要求1或2所述的陶瓷板,其中,
所述硅酸盐相中的所述镁硅酸盐结晶的含有率为20~90质量%。
4.根据权利要求1~3的任一项所述的陶瓷板,其中,
所述镁硅酸盐结晶和所述稀土类硅酸盐结晶位于所述晶界之中相互不同的部分。
5.根据权利要求1~4的任一项所述的陶瓷板,其中,
所述稀土类硅酸盐结晶包含最小粒径比所述镁硅酸盐结晶小的铒硅酸盐结晶以及钇硅酸盐结晶的至少一种。
6.一种电子装置,具备:
权利要求1~权利要求5的任一项所述的陶瓷板;和
与该陶瓷板热连接的电子部件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-085516 | 2017-04-24 | ||
JP2017085516 | 2017-04-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108727035A true CN108727035A (zh) | 2018-11-02 |
Family
ID=61074288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810037497.2A Pending CN108727035A (zh) | 2017-04-24 | 2018-01-15 | 陶瓷板以及电子装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10462899B2 (zh) |
EP (1) | EP3395780B1 (zh) |
JP (1) | JP7033992B2 (zh) |
KR (1) | KR20180119094A (zh) |
CN (1) | CN108727035A (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021046333A (ja) * | 2019-09-18 | 2021-03-25 | 株式会社東芝 | 構造物及び回路基板 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11310464A (ja) * | 1998-04-27 | 1999-11-09 | Kyocera Corp | 窒化珪素質放熱部材及びその製造方法 |
US6294244B1 (en) * | 1997-12-22 | 2001-09-25 | Kyocera Corporation | Wiring board having excellent heat-radiating property |
CN102105418A (zh) * | 2008-07-03 | 2011-06-22 | 日立金属株式会社 | 氮化硅基板及其制造方法,以及使用该氮化硅基板的氮化硅电路基板和半导体模块 |
CN102781878A (zh) * | 2010-03-09 | 2012-11-14 | 京瓷株式会社 | 陶瓷烧结体及使用其的电路基板、电子装置以及热电转换组件 |
CN104098336A (zh) * | 2013-04-15 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | 一种制备高热导率、高强度氮化硅陶瓷的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145965A (ja) | 1984-01-06 | 1985-08-01 | 宇部興産株式会社 | 窒化珪素質焼結体の製法 |
JP4346151B2 (ja) | 1998-05-12 | 2009-10-21 | 株式会社東芝 | 高熱伝導性窒化けい素焼結体およびそれを用いた回路基板並びに集積回路 |
JP2001181053A (ja) * | 1999-12-22 | 2001-07-03 | Sumitomo Electric Ind Ltd | 窒化ケイ素焼結体及びその製造方法 |
JP2005082405A (ja) * | 2003-09-04 | 2005-03-31 | Isuzu Motors Ltd | 窒化ケイ素複合材及びその製造方法 |
EP2107854B1 (en) | 2006-05-18 | 2012-04-11 | NGK Spark Plug Co., Ltd. | Ceramic heater and glow plug |
JP4996283B2 (ja) | 2006-05-18 | 2012-08-08 | 日本特殊陶業株式会社 | セラミックヒータ及びグロープラグ |
JP2010235335A (ja) * | 2009-03-30 | 2010-10-21 | Kyocera Corp | セラミック焼結体、放熱基体および電子装置 |
JP6147730B2 (ja) * | 2011-04-27 | 2017-06-14 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 細胞を溶解する方法 |
-
2018
- 2018-01-15 CN CN201810037497.2A patent/CN108727035A/zh active Pending
- 2018-01-15 KR KR1020180005032A patent/KR20180119094A/ko not_active Application Discontinuation
- 2018-01-15 EP EP18151617.0A patent/EP3395780B1/en active Active
- 2018-01-29 US US15/882,063 patent/US10462899B2/en active Active
- 2018-04-11 JP JP2018076035A patent/JP7033992B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6294244B1 (en) * | 1997-12-22 | 2001-09-25 | Kyocera Corporation | Wiring board having excellent heat-radiating property |
JPH11310464A (ja) * | 1998-04-27 | 1999-11-09 | Kyocera Corp | 窒化珪素質放熱部材及びその製造方法 |
CN102105418A (zh) * | 2008-07-03 | 2011-06-22 | 日立金属株式会社 | 氮化硅基板及其制造方法,以及使用该氮化硅基板的氮化硅电路基板和半导体模块 |
CN102781878A (zh) * | 2010-03-09 | 2012-11-14 | 京瓷株式会社 | 陶瓷烧结体及使用其的电路基板、电子装置以及热电转换组件 |
CN104098336A (zh) * | 2013-04-15 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | 一种制备高热导率、高强度氮化硅陶瓷的方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3395780A1 (en) | 2018-10-31 |
KR20180119094A (ko) | 2018-11-01 |
US10462899B2 (en) | 2019-10-29 |
EP3395780B1 (en) | 2021-05-12 |
US20180310402A1 (en) | 2018-10-25 |
JP2018184337A (ja) | 2018-11-22 |
JP7033992B2 (ja) | 2022-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9196563B2 (en) | Bonded body and semiconductor module | |
JP7162966B2 (ja) | 電子部品 | |
US20120080800A1 (en) | Power module and method for manufacturing the same | |
JP6778274B2 (ja) | 多層キャリアシステム、多層キャリアシステムの製造方法及び多層キャリアシステムの使用方法 | |
JP2014505881A (ja) | セラミック支持体を含む電子部品およびセラミック支持体の使用 | |
US20110005810A1 (en) | Insulating substrate and method for producing the same | |
CN108727035A (zh) | 陶瓷板以及电子装置 | |
CN101478024B (zh) | Led硅封装单元 | |
CN107210273B (zh) | 功率模块 | |
JP6717379B2 (ja) | SiCヒーター | |
CN110268536B (zh) | 热电元件 | |
KR20210102132A (ko) | 열전모듈 | |
JP6710083B2 (ja) | 熱放射部材、パワー半導体モジュール、及びledパッケージ | |
JP2004296726A (ja) | 放熱部材および半導体素子収納用パッケージおよび半導体装置 | |
JP6829153B2 (ja) | セラミック板、半導体装置および半導体モジュール | |
JP7264627B2 (ja) | セラミック板、半導体装置および半導体モジュール | |
JP2003100972A (ja) | 光伝送モジュール用パッケージ | |
JP2003188295A (ja) | 半導体素子収納パッケージ用放熱板及び光通信モジュールパッケージ用放熱板 | |
JP3971592B2 (ja) | 半導体素子収納用パッケージ | |
JP2002353254A (ja) | 押圧加熱ヒーター | |
JP2518721Y2 (ja) | 半導体素子収納用パッケージ | |
JP2013004711A (ja) | 熱電変換モジュール及びその製造方法 | |
US20130269745A1 (en) | Thermoelectric conversion module | |
JPH10135273A (ja) | 配線基板の実装構造 | |
JP2003068950A (ja) | 半導体素子収納用パッケージ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181102 |
|
WD01 | Invention patent application deemed withdrawn after publication |