JP2014505881A - セラミック支持体を含む電子部品およびセラミック支持体の使用 - Google Patents
セラミック支持体を含む電子部品およびセラミック支持体の使用 Download PDFInfo
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Abstract
Description
特にケイ素またはケイ素炭化物をベースとした半導体素子をセラミック支持体に固定するには、たいていの場合、相応の固定手段が用いられる。これは特に駆動温度が高い半導体の適用分野で問題となりやすい。なぜなら、半導体材料の熱膨張係数とセラミック支持体の熱膨張係数とがしばしば大きく異なっているために、例えば応力断裂によって電子部品が損傷を受ける危険があるためである。
本発明の対象は、250℃以上、特に400℃以上の温度範囲での高温適用のための電子部品である。本発明の電子部品は、セラミック支持体と半導体素子とを含み、セラミック支持体は、含量0.5%以下、特に0.05%以下のアルカリ金属化合物を含むセラミック基板を含み、このセラミック基板は、
・アルミニウム酸化物と、灰長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・アルミニウム酸化物と、重土長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・50mol%より大きい含量範囲の二酸化ケイ素を含むアルカリ土類ケイ酸塩と、ホウ素酸化物と、熱膨張係数4.0×10−6K−1以下の充填物質とを含むセラミック基板
のグループから選択されている。
a)含量0.5%以下、特に0.05%以下のアルカリ金属化合物を含むセラミック基板であって、
・アルミニウム酸化物と、灰長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・アルミニウム酸化物と、重土長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・50mol%より大きい含量範囲の二酸化ケイ素を含むアルカリ土類ケイ酸塩ガラスと、ホウ素酸化物と、熱膨張係数4.0×10−6K−1以下の充填物質とを含むセラミック基板
のグループから選択されているセラミック基板
を用意するステップと、
b)セラミック基板の引き出しもしくは射出成形によってグリーンボディを成形するステップと、
c)少なくとも1つの機能層、例えば金属導体路などをグリーンボディに設けるステップと、
d)グリーンボディを焼結するステップと、
を含むことを特徴とする。
・アルミニウム酸化物と、灰長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・アルミニウム酸化物と、重土長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・50mol%より大きい含量範囲の二酸化ケイ素を含むアルカリ土類ケイ酸塩ガラスと、ホウ素酸化物と、熱膨張係数4.0×10−6K−1以下の充填物質とを含むセラミック基板
のグループから選択されているセラミック基板
を含むセラミック支持体を、250℃以上、特に400℃以上の温度範囲での高温適用のための半導体素子に対する支持体基板として用いる、セラミック支持体の使用にも関する。
・アルミニウム酸化物と、灰長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・アルミニウム酸化物と、重土長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・50mol%より大きい含量範囲の二酸化ケイ素を含むアルカリ土類ケイ酸塩ガラスと、ホウ素酸化物と、熱膨張係数4.0×10−6K−1以下の充填物質とを含むセラミック基板
のグループから選択されている。
Claims (10)
- 250℃以上、例えば400℃以上の温度範囲での高温適用のための電子部品であって、
前記電子部品は、セラミック支持体(12)と半導体素子(16)とを含み、
前記セラミック支持体(12)は、含量0.5%以下、例えば0.05%以下のアルカリ金属化合物を含むセラミック基板を含み、
前記セラミック基板は、
・アルミニウム酸化物と、灰長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・アルミニウム酸化物と、重土長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・50mol%より大きい含量範囲の二酸化ケイ素を含むアルカリ土類ケイ酸塩ガラスと、ホウ素酸化物と、熱膨張係数4.0×10−6K−1以下の充填物質とを含むセラミック基板
のグループから選択されている
ことを特徴する電子部品。 - 前記セラミック基板は、3.0×10−6K−1以上4.5×10−6K−1以下の範囲、特に有利には4.0×10−6K−1以上4.2×10−6K−1以下の範囲の熱膨張係数を有する、請求項1記載の電子部品。
- 前記セラミック基板に含まれる前記充填物質は、菫青石もしくはムル石もしくはケイ素窒化物もしくはケイ素炭化物もしくは50mol%より大きい含量範囲の二酸化ケイ素を含むガラスもしくは石英ガラスのグループから選択されている、請求項1または2記載の電子部品。
- 前記セラミック基板は、さらに、焼結補助剤、例えば二酸化チタンもしくは二酸化ジルコニウムを含む、請求項1から3までのいずれか1項記載の電子部品。
- 前記セラミック支持体(12)の内部に、電気的加熱を行うことのできるヒータ素子(20)が配置されている、請求項1から4までのいずれか1項記載の電子部品。
- 前記ヒータ素子(20)は貴金属もしくは貴金属合金と少なくとも1つの高抵抗性材料とを含む金属材料を含む、請求項5記載の電子部品。
- 前記ヒータ素子(20)は、ガラスと導電性金属酸化物、例えば二酸化ルテニウムとの合成物を含む、請求項5記載の電子部品。
- 前記電子部品(10)はセンサの一部であり、例えば排気ガスセンサの一部である、請求項1から7までのいずれか1項記載の電子部品。
- 請求項1から8までのいずれか1項記載の電子部品の製造方法において、
含量0.5%以下、例えば0.05%以下のアルカリ金属化合物を含むセラミック基板であって、
・アルミニウム酸化物と、灰長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・アルミニウム酸化物と、重土長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・50mol%より大きい含量範囲の二酸化ケイ素を含むアルカリ土類ケイ酸塩ガラスと、ホウ素酸化物と、熱膨張係数4.0×10−6K−1以下の充填物質とを含むセラミック基板
のグループから選択されるセラミック基板
を用意するステップと、
前記セラミック基板の引き出しもしくは射出成形によってグリーンボディを成形するステップと、
少なくとも1つの機能層、例えば金属導体路などを前記グリーンボディに設けるステップと、
前記グリーンボディを焼結するステップと、
を含む
ことを特徴とする電子部品の製造方法。 - 含量0.5%以下、例えば0.05%以下のアルカリ金属化合物を含むセラミック基板であって、
・アルミニウム酸化物と、灰長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・アルミニウム酸化物と、重土長石と、熱膨張係数4.0×10−6K−1以下の充填物質とガラスとを含むセラミック基板、
・50mol%より大きい含量範囲の二酸化ケイ素を含むアルカリ土類ケイ酸塩ガラスと、ホウ素酸化物と、熱膨張係数4.0×10−6K−1以下の充填物質とを含むセラミック基板
のグループから選択されているセラミック基板
を含むセラミック支持体(12)を、250℃以上、例えば400℃以上の温度範囲での高温適用のための半導体素子に対する支持体基板として用いる、
セラミック支持体(12)の使用。
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DE102011003481.1 | 2011-02-02 | ||
DE102011003481A DE102011003481A1 (de) | 2011-02-02 | 2011-02-02 | Elektronisches Bauteil umfassend einen keramischen träger und Verwendung eines keramischen Trägers |
PCT/EP2012/051493 WO2012104271A1 (de) | 2011-02-02 | 2012-01-31 | Elektronisches bauteil umfassend einen keramischen träger und verwendung eines keramischen trägers |
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JP2014505881A true JP2014505881A (ja) | 2014-03-06 |
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US (1) | US20140071645A1 (ja) |
EP (1) | EP2671252A1 (ja) |
JP (1) | JP2014505881A (ja) |
CN (1) | CN103329261A (ja) |
DE (1) | DE102011003481A1 (ja) |
WO (1) | WO2012104271A1 (ja) |
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DE102012221990A1 (de) * | 2012-11-30 | 2014-06-05 | Robert Bosch Gmbh | Verbindungsmittel zum Verbinden von wenigstens zwei Komponenten unter Verwendung eines Sinterprozesses |
US9230889B2 (en) * | 2013-01-16 | 2016-01-05 | Infineon Technologies Ag | Chip arrangement with low temperature co-fired ceramic and a method for forming a chip arrangement with low temperature co-fired ceramic |
DE102013101731A1 (de) | 2013-02-21 | 2014-09-04 | Epcos Ag | Drucksensorsystem |
DE102013101732A1 (de) * | 2013-02-21 | 2014-08-21 | Epcos Ag | Sensorsystem |
JP6728859B2 (ja) * | 2016-03-25 | 2020-07-22 | 日立金属株式会社 | セラミック基板およびその製造方法 |
JP6740995B2 (ja) * | 2017-06-30 | 2020-08-19 | 株式会社デンソー | 電気抵抗体、ハニカム構造体、および、電気加熱式触媒装置 |
CN108046829B (zh) * | 2017-12-20 | 2020-06-16 | 东北大学 | 一种非金属矿物多孔基板及其制备方法和应用 |
US11193836B2 (en) * | 2018-02-01 | 2021-12-07 | Electric Power Research Institute, Inc. | Apparatus having a semiconductor strain gage encased within ceramic material for measuring strain and methods for making and using same |
CN108503230A (zh) * | 2018-04-24 | 2018-09-07 | 佛山市奥耶克思机械设备有限公司 | 一种封装基板复合材料及其制备方法 |
JP6927251B2 (ja) * | 2019-07-08 | 2021-08-25 | Tdk株式会社 | ガラスセラミックス焼結体および配線基板 |
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DE102011003481A1 (de) | 2012-08-02 |
EP2671252A1 (de) | 2013-12-11 |
WO2012104271A1 (de) | 2012-08-09 |
US20140071645A1 (en) | 2014-03-13 |
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