DE69909248T2 - Verfahren zur verminderung der erosion einer maske während eines plasmaätzens - Google Patents
Verfahren zur verminderung der erosion einer maske während eines plasmaätzens Download PDFInfo
- Publication number
- DE69909248T2 DE69909248T2 DE69909248T DE69909248T DE69909248T2 DE 69909248 T2 DE69909248 T2 DE 69909248T2 DE 69909248 T DE69909248 T DE 69909248T DE 69909248 T DE69909248 T DE 69909248T DE 69909248 T2 DE69909248 T2 DE 69909248T2
- Authority
- DE
- Germany
- Prior art keywords
- during
- mask
- cycle
- etching
- power cycle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000003628 erosive effect Effects 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 66
- 229920000642 polymer Polymers 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000012545 processing Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 25
- 230000008021 deposition Effects 0.000 description 20
- 239000007789 gas Substances 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18448 | 1998-02-04 | ||
| US09/018,448 US6093332A (en) | 1998-02-04 | 1998-02-04 | Methods for reducing mask erosion during plasma etching |
| PCT/US1999/002224 WO1999040607A1 (en) | 1998-02-04 | 1999-02-02 | Methods for reducing mask erosion during plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69909248D1 DE69909248D1 (de) | 2003-08-07 |
| DE69909248T2 true DE69909248T2 (de) | 2004-05-27 |
Family
ID=21787981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69909248T Expired - Lifetime DE69909248T2 (de) | 1998-02-04 | 1999-02-02 | Verfahren zur verminderung der erosion einer maske während eines plasmaätzens |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6093332A (enExample) |
| EP (1) | EP1053563B1 (enExample) |
| JP (1) | JP4548561B2 (enExample) |
| KR (1) | KR100604741B1 (enExample) |
| AT (1) | ATE244453T1 (enExample) |
| DE (1) | DE69909248T2 (enExample) |
| WO (1) | WO1999040607A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100521120B1 (ko) * | 1998-02-13 | 2005-10-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체소자의 표면처리방법 및 장치 |
| WO1999046810A1 (en) * | 1998-03-12 | 1999-09-16 | Hitachi, Ltd. | Method for processing surface of sample |
| US6492277B1 (en) * | 1999-09-10 | 2002-12-10 | Hitachi, Ltd. | Specimen surface processing method and apparatus |
| KR100768610B1 (ko) * | 1998-12-11 | 2007-10-18 | 서페이스 테크놀로지 시스템스 피엘씨 | 플라즈마 처리장치 |
| US6255221B1 (en) * | 1998-12-17 | 2001-07-03 | Lam Research Corporation | Methods for running a high density plasma etcher to achieve reduced transistor device damage |
| JP4351755B2 (ja) * | 1999-03-12 | 2009-10-28 | キヤノンアネルバ株式会社 | 薄膜作成方法および薄膜作成装置 |
| KR100750420B1 (ko) * | 1999-08-17 | 2007-08-21 | 동경 엘렉트론 주식회사 | 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터 |
| JP2001168086A (ja) | 1999-12-09 | 2001-06-22 | Kawasaki Steel Corp | 半導体装置の製造方法および製造装置 |
| US20020185226A1 (en) * | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
| DE10309711A1 (de) * | 2001-09-14 | 2004-09-16 | Robert Bosch Gmbh | Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma |
| WO2003036703A1 (en) * | 2001-10-22 | 2003-05-01 | Unaxis Usa, Inc. | Process and apparatus for etching of thin, damage sensitive layers using high frequency pulsed plasma |
| EP1444726A4 (en) * | 2001-10-22 | 2008-08-13 | Unaxis Usa Inc | METHOD AND DEVICE FOR Etching PHOTOMASCIC SUBSTRATES USING PULSED PLASMA |
| TW567394B (en) * | 2001-10-22 | 2003-12-21 | Unaxis Usa Inc | Apparatus for processing a photomask, method for processing a substrate, and method of employing a plasma reactor to etch a thin film upon a substrate |
| TWI315966B (en) * | 2002-02-20 | 2009-10-11 | Panasonic Elec Works Co Ltd | Plasma processing device and plasma processing method |
| US20030235998A1 (en) * | 2002-06-24 | 2003-12-25 | Ming-Chung Liang | Method for eliminating standing waves in a photoresist profile |
| US20040097077A1 (en) * | 2002-11-15 | 2004-05-20 | Applied Materials, Inc. | Method and apparatus for etching a deep trench |
| US6759339B1 (en) * | 2002-12-13 | 2004-07-06 | Silicon Magnetic Systems | Method for plasma etching a microelectronic topography using a pulse bias power |
| US7976673B2 (en) * | 2003-05-06 | 2011-07-12 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
| US7446050B2 (en) * | 2003-08-04 | 2008-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching and plasma treatment process to improve a gate profile |
| JP2005072260A (ja) * | 2003-08-25 | 2005-03-17 | Sanyo Electric Co Ltd | プラズマ処理方法、プラズマエッチング方法、固体撮像素子の製造方法 |
| US7879510B2 (en) * | 2005-01-08 | 2011-02-01 | Applied Materials, Inc. | Method for quartz photomask plasma etching |
| US7449414B2 (en) * | 2006-08-07 | 2008-11-11 | Tokyo Electron Limited | Method of treating a mask layer prior to performing an etching process |
| US7642193B2 (en) * | 2006-08-07 | 2010-01-05 | Tokyo Electron Limited | Method of treating a mask layer prior to performing an etching process |
| US7572386B2 (en) | 2006-08-07 | 2009-08-11 | Tokyo Electron Limited | Method of treating a mask layer prior to performing an etching process |
| JP5271267B2 (ja) * | 2006-08-07 | 2013-08-21 | 東京エレクトロン株式会社 | エッチング処理を実行する前のマスク層処理方法 |
| US8192576B2 (en) * | 2006-09-20 | 2012-06-05 | Lam Research Corporation | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
| JP5192209B2 (ja) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
| JP5514413B2 (ja) * | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| JP5295748B2 (ja) * | 2008-12-18 | 2013-09-18 | 東京エレクトロン株式会社 | 構成部品の洗浄方法及び記憶媒体 |
| US9105705B2 (en) * | 2011-03-14 | 2015-08-11 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
| CN103871865B (zh) * | 2012-12-18 | 2016-08-17 | 中微半导体设备(上海)有限公司 | 一种清洁等离子体反应腔侧壁的方法 |
| US9818841B2 (en) | 2015-05-15 | 2017-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with unleveled gate structure and method for forming the same |
| US9583485B2 (en) | 2015-05-15 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same |
| JP6670692B2 (ja) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US11417501B2 (en) | 2015-09-29 | 2022-08-16 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| US10886136B2 (en) * | 2019-01-31 | 2021-01-05 | Tokyo Electron Limited | Method for processing substrates |
| US11915932B2 (en) * | 2021-04-28 | 2024-02-27 | Applied Materials, Inc. | Plasma etching of mask materials |
| KR20240026068A (ko) * | 2021-06-29 | 2024-02-27 | 램 리써치 코포레이션 | 고 종횡비 에칭을 위한 다중 상태 펄싱 |
| US20250029818A1 (en) * | 2022-04-13 | 2025-01-23 | Hitachi High-Tech Corporation | Plasma processing method and plasma processing device |
| US12217935B2 (en) | 2022-05-22 | 2025-02-04 | Tokyo Electron Limited | Plasma processing methods using multiphase multifrequency bias pulses |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI62692C (fi) * | 1981-05-20 | 1983-02-10 | Valmet Oy | Pappersmaskinspress med bred presszon |
| US4500563A (en) * | 1982-12-15 | 1985-02-19 | Pacific Western Systems, Inc. | Independently variably controlled pulsed R.F. plasma chemical vapor processing |
| KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
| JPH088237B2 (ja) * | 1986-10-17 | 1996-01-29 | 株式会社日立製作所 | プラズマ処理方法 |
| DE3733135C1 (de) * | 1987-10-01 | 1988-09-22 | Leybold Ag | Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas |
| KR900013595A (ko) * | 1989-02-15 | 1990-09-06 | 미다 가쓰시게 | 플라즈마 에칭방법 및 장치 |
| DE69017744T2 (de) * | 1989-04-27 | 1995-09-14 | Fuji Electric Co Ltd | Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas. |
| US4889588A (en) * | 1989-05-01 | 1989-12-26 | Tegal Corporation | Plasma etch isotropy control |
| JPH07226397A (ja) * | 1994-02-10 | 1995-08-22 | Tokyo Electron Ltd | エッチング処理方法 |
| JP2764524B2 (ja) * | 1993-09-28 | 1998-06-11 | 名古屋大学長 | ラジカルの制御装置 |
| US5468341A (en) * | 1993-12-28 | 1995-11-21 | Nec Corporation | Plasma-etching method and apparatus therefor |
| US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
| US5614060A (en) * | 1995-03-23 | 1997-03-25 | Applied Materials, Inc. | Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal |
| JP3201223B2 (ja) * | 1995-07-17 | 2001-08-20 | 株式会社日立製作所 | プラズマ処理方法および装置 |
| US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
-
1998
- 1998-02-04 US US09/018,448 patent/US6093332A/en not_active Expired - Lifetime
-
1999
- 1999-02-02 KR KR1020007008510A patent/KR100604741B1/ko not_active Expired - Lifetime
- 1999-02-02 DE DE69909248T patent/DE69909248T2/de not_active Expired - Lifetime
- 1999-02-02 EP EP99904542A patent/EP1053563B1/en not_active Expired - Lifetime
- 1999-02-02 AT AT99904542T patent/ATE244453T1/de active
- 1999-02-02 JP JP2000530927A patent/JP4548561B2/ja not_active Expired - Lifetime
- 1999-02-02 WO PCT/US1999/002224 patent/WO1999040607A1/en not_active Ceased
-
2000
- 2000-07-05 US US09/610,303 patent/US6489245B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999040607A1 (en) | 1999-08-12 |
| EP1053563A1 (en) | 2000-11-22 |
| EP1053563B1 (en) | 2003-07-02 |
| KR100604741B1 (ko) | 2006-07-26 |
| US6093332A (en) | 2000-07-25 |
| JP4548561B2 (ja) | 2010-09-22 |
| US6489245B1 (en) | 2002-12-03 |
| JP2002503029A (ja) | 2002-01-29 |
| DE69909248D1 (de) | 2003-08-07 |
| ATE244453T1 (de) | 2003-07-15 |
| KR20010040638A (ko) | 2001-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |