KR100604741B1 - 플라즈마 에칭 중 마스크 부식을 감소시키는 방법 - Google Patents

플라즈마 에칭 중 마스크 부식을 감소시키는 방법 Download PDF

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Publication number
KR100604741B1
KR100604741B1 KR1020007008510A KR20007008510A KR100604741B1 KR 100604741 B1 KR100604741 B1 KR 100604741B1 KR 1020007008510 A KR1020007008510 A KR 1020007008510A KR 20007008510 A KR20007008510 A KR 20007008510A KR 100604741 B1 KR100604741 B1 KR 100604741B1
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mask
power cycle
during
cycle
etching
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Korean (ko)
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KR20010040638A (ko
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차로슬로프더블유. 비니체크
바히드 바헤디
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020007008510A 1998-02-04 1999-02-02 플라즈마 에칭 중 마스크 부식을 감소시키는 방법 Expired - Lifetime KR100604741B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/018,448 1998-02-04
US09/018,448 US6093332A (en) 1998-02-04 1998-02-04 Methods for reducing mask erosion during plasma etching

Publications (2)

Publication Number Publication Date
KR20010040638A KR20010040638A (ko) 2001-05-15
KR100604741B1 true KR100604741B1 (ko) 2006-07-26

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KR1020007008510A Expired - Lifetime KR100604741B1 (ko) 1998-02-04 1999-02-02 플라즈마 에칭 중 마스크 부식을 감소시키는 방법

Country Status (7)

Country Link
US (2) US6093332A (enExample)
EP (1) EP1053563B1 (enExample)
JP (1) JP4548561B2 (enExample)
KR (1) KR100604741B1 (enExample)
AT (1) ATE244453T1 (enExample)
DE (1) DE69909248T2 (enExample)
WO (1) WO1999040607A1 (enExample)

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KR100528685B1 (ko) 1998-03-12 2005-11-15 가부시끼가이샤 히다치 세이사꾸쇼 시료의 표면 가공방법
US6492277B1 (en) * 1999-09-10 2002-12-10 Hitachi, Ltd. Specimen surface processing method and apparatus
JP4714309B2 (ja) * 1998-12-11 2011-06-29 サーフィス テクノロジー システムズ ピーエルシー プラズマ加工装置
US6255221B1 (en) * 1998-12-17 2001-07-03 Lam Research Corporation Methods for running a high density plasma etcher to achieve reduced transistor device damage
JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
ATE420454T1 (de) * 1999-08-17 2009-01-15 Tokyo Electron Ltd Gepulstes plasmabehandlungsverfahren und vorrichtung
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
TW567394B (en) * 2001-10-22 2003-12-21 Unaxis Usa Inc Apparatus for processing a photomask, method for processing a substrate, and method of employing a plasma reactor to etch a thin film upon a substrate
JP2005531125A (ja) * 2001-10-22 2005-10-13 ユナクシス・ユーエスエイ・インコーポレーテッド パルス化プラズマを使用したフォトマスク基板のエッチングのための方法及び装置
US20030077910A1 (en) * 2001-10-22 2003-04-24 Russell Westerman Etching of thin damage sensitive layers using high frequency pulsed plasma
TWI315966B (en) * 2002-02-20 2009-10-11 Panasonic Elec Works Co Ltd Plasma processing device and plasma processing method
US20030235998A1 (en) * 2002-06-24 2003-12-25 Ming-Chung Liang Method for eliminating standing waves in a photoresist profile
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US6759339B1 (en) * 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US7446050B2 (en) * 2003-08-04 2008-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Etching and plasma treatment process to improve a gate profile
JP2005072260A (ja) * 2003-08-25 2005-03-17 Sanyo Electric Co Ltd プラズマ処理方法、プラズマエッチング方法、固体撮像素子の製造方法
US7879510B2 (en) * 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
KR101346897B1 (ko) * 2006-08-07 2014-01-02 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 시스템
US7449414B2 (en) * 2006-08-07 2008-11-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7572386B2 (en) 2006-08-07 2009-08-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7642193B2 (en) * 2006-08-07 2010-01-05 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US8192576B2 (en) * 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP5295748B2 (ja) * 2008-12-18 2013-09-18 東京エレクトロン株式会社 構成部品の洗浄方法及び記憶媒体
US9105705B2 (en) * 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN103871865B (zh) * 2012-12-18 2016-08-17 中微半导体设备(上海)有限公司 一种清洁等离子体反应腔侧壁的方法
US9583485B2 (en) 2015-05-15 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
US9818841B2 (en) 2015-05-15 2017-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with unleveled gate structure and method for forming the same
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
US11915932B2 (en) * 2021-04-28 2024-02-27 Applied Materials, Inc. Plasma etching of mask materials
US12278112B2 (en) * 2021-06-29 2025-04-15 Lam Research Corporation Multiple state pulsing for high aspect ratio etch
KR20230147594A (ko) * 2022-04-13 2023-10-23 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 디바이스
US12217935B2 (en) 2022-05-22 2025-02-04 Tokyo Electron Limited Plasma processing methods using multiphase multifrequency bias pulses

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FI62692C (fi) * 1981-05-20 1983-02-10 Valmet Oy Pappersmaskinspress med bred presszon
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPH088237B2 (ja) * 1986-10-17 1996-01-29 株式会社日立製作所 プラズマ処理方法
DE3733135C1 (de) * 1987-10-01 1988-09-22 Leybold Ag Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
US4889588A (en) * 1989-05-01 1989-12-26 Tegal Corporation Plasma etch isotropy control
JPH07226397A (ja) * 1994-02-10 1995-08-22 Tokyo Electron Ltd エッチング処理方法
JP2764524B2 (ja) * 1993-09-28 1998-06-11 名古屋大学長 ラジカルの制御装置
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
US5614060A (en) * 1995-03-23 1997-03-25 Applied Materials, Inc. Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal
JP3201223B2 (ja) * 1995-07-17 2001-08-20 株式会社日立製作所 プラズマ処理方法および装置
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate

Also Published As

Publication number Publication date
KR20010040638A (ko) 2001-05-15
WO1999040607A1 (en) 1999-08-12
JP4548561B2 (ja) 2010-09-22
EP1053563B1 (en) 2003-07-02
US6093332A (en) 2000-07-25
JP2002503029A (ja) 2002-01-29
EP1053563A1 (en) 2000-11-22
DE69909248T2 (de) 2004-05-27
DE69909248D1 (de) 2003-08-07
US6489245B1 (en) 2002-12-03
ATE244453T1 (de) 2003-07-15

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