KR100595090B1 - 포토레지스트 마스크를 사용한 개선된 엣칭방법 - Google Patents
포토레지스트 마스크를 사용한 개선된 엣칭방법 Download PDFInfo
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- KR100595090B1 KR100595090B1 KR1020007006881A KR20007006881A KR100595090B1 KR 100595090 B1 KR100595090 B1 KR 100595090B1 KR 1020007006881 A KR1020007006881 A KR 1020007006881A KR 20007006881 A KR20007006881 A KR 20007006881A KR 100595090 B1 KR100595090 B1 KR 100595090B1
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- photoresist
- plasma
- etching
- photoresist mask
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 184
- 238000005530 etching Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 57
- 150000004767 nitrides Chemical class 0.000 claims abstract description 51
- 238000012545 processing Methods 0.000 claims abstract description 46
- 239000000460 chlorine Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 28
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 78
- 239000007789 gas Substances 0.000 description 21
- 238000010849 ion bombardment Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000009832 plasma treatment Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (20)
- 삭제
- 삭제
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- 삭제
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- 다음을 포함하는, 포토레지스트 마스크(108) 아래에 배치되고 기질(102)위에 배치되는 질화물 포토레지스트 하부층(106) 엣칭동안의 프로파일 조절 개선 방법.상기 포토레지스트 하부층과(106) 포토레지스트 마스크(108)를 포함한 기질(102)을 플라즈마 처리 챔버(502)에 위치시키고;염소-함유 엣칭제 소스가스를 플라즈마 처리챔버(502)에 흐르게 하고, 여기서 상기 염소-함유 엣칭제 소스가스는 Cl2, Cl2/He, Cl2/HBr, Cl2/HBr/He, Cl2/O2 그리고 Cl2/N2으로 구성된 그룹으로부터 선택되며;상기 염소함유 엣칭제 소스가스로부터 플라즈마를 발생시켜 상기 플라즈마 처리챔버 내에 염소기초 플라즈마를 형성하고; 그리고상기 플라즈마 처리챔버 내에서 상기 염소기초 플라즈마를 사용하여 포토레지스트 마스크를 처리하여 포토레지스트 하부층을 엣칭시키지 않고 포토레지스트 마스크의 수직측벽상에 부동태화 폴리머를 침착시키고 포토레지스트 마스크의 일부를 엣칭함.
- 제 8 항에 있어서, 상기 포토레지스트 하부층이 포토레지스트 마스크 바로 아래에서 포토레지스트 마스크와 직접 접촉함을 특징으로 하는 방법.
- 제 8 항에 있어서, 상기 플라즈마 처리챔버에 RF 에너지를 공급함으로써 상기 엣칭제 소스가스를 사용하여 염소기초 플라즈마를 형성함을 특징으로 하는 방법.
- 제 8 항에 있어서, 상기 포토레지스트 마스크 처리후 상기 염소기초 플라즈마와 상이한 플라즈마를 써서 상기 포토레지스트 마스크를 이용하여 상기 포토레지 스트 하부층을 엣칭하는 단계를 더욱 포함하는 방법.
- 제 11 항에 있어서, 상기 포토레지스트마스크 처리 및 상기 포토레지스트 하부층 엣칭이 상기 플라즈마 처리챔버에서 모두 수행됨을 특징으로 하는 방법.
- 제 8 항에 있어서, 상기 포토레지스트 하부층이 질화물층이고 상기 기질이 실리콘 기초 기질임을 특징으로 하는 방법.
- 제 13 항에 있어서, 포토레지스트 마스크 처리후 상기 포토레지스트 마스크를 사용하여 포토레지스트 하부층을 엣칭하는 단계를 더욱 포함하며, 포토레지스트 하부층 엣칭단계가 불소기초 플라즈마로 엣칭시키는 과정을 포함함을 특징으로 하는 방법.
- 제 14 항에 있어서, 상기 불소기초 플라즈마가 SF6, SF6/He, SF6/He/CHF 3, CF4, He/SF6/HBr 및 He/CF4에서 선택된 제 2 엣칭제 소스가스로부터 형성됨을 특징으로 하는 방법.
- 제 8 항에 있어서, 상기 처리단계가 예정된 기간동안 상기 염소기초 플라즈마를 써서 포토레지스트층을 엣칭하는 과정을 포함함을 특징으로 하는 방법.
- 삭제
- 삭제
- 삭제
- 제 8 항에 있어서, 상기 플라즈마 처리챔버가 유도연결된 플라즈마 처리챔버 또는 병렬판 플라즈마 처리챔버임을 특징으로 하는 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8/997,346 | 1997-12-23 | ||
US08/997,346 | 1997-12-23 | ||
US08/997,346 US6121154A (en) | 1997-12-23 | 1997-12-23 | Techniques for etching with a photoresist mask |
PCT/US1998/026502 WO1999033095A1 (en) | 1997-12-23 | 1998-12-11 | Improved techniques for etching with a photoresist mask |
Publications (2)
Publication Number | Publication Date |
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KR20010033406A KR20010033406A (ko) | 2001-04-25 |
KR100595090B1 true KR100595090B1 (ko) | 2006-07-03 |
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ID=25543912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020007006881A KR100595090B1 (ko) | 1997-12-23 | 1998-12-11 | 포토레지스트 마스크를 사용한 개선된 엣칭방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6121154A (ko) |
EP (1) | EP1042791B1 (ko) |
JP (1) | JP4351806B2 (ko) |
KR (1) | KR100595090B1 (ko) |
DE (1) | DE69840237D1 (ko) |
TW (1) | TW464976B (ko) |
WO (1) | WO1999033095A1 (ko) |
Cited By (1)
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KR101414307B1 (ko) * | 2006-05-17 | 2014-08-06 | 램 리써치 코포레이션 | 반도체 처리에 있어서 마스크를 제공하는 방법 및 장치 |
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IT1301840B1 (it) * | 1998-06-30 | 2000-07-07 | Stmicroelettronica S R L | Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi |
US6110779A (en) * | 1998-07-17 | 2000-08-29 | Advanced Micro Devices, Inc. | Method and structure of etching a memory cell polysilicon gate layer using resist mask and etched silicon oxynitride |
US6291357B1 (en) | 1999-10-06 | 2001-09-18 | Applied Materials, Inc. | Method and apparatus for etching a substrate with reduced microloading |
US6461969B1 (en) * | 1999-11-22 | 2002-10-08 | Chartered Semiconductor Manufacturing Ltd. | Multiple-step plasma etching process for silicon nitride |
US6660646B1 (en) * | 2000-09-21 | 2003-12-09 | Northrop Grumman Corporation | Method for plasma hardening photoresist in etching of semiconductor and superconductor films |
JP4128365B2 (ja) * | 2002-02-07 | 2008-07-30 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
US6923920B2 (en) * | 2002-08-14 | 2005-08-02 | Lam Research Corporation | Method and compositions for hardening photoresist in etching processes |
US6797610B1 (en) | 2002-12-11 | 2004-09-28 | International Business Machines Corporation | Sublithographic patterning using microtrenching |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US20040224524A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Maintaining the dimensions of features being etched on a lithographic mask |
US7682516B2 (en) * | 2005-10-05 | 2010-03-23 | Lam Research Corporation | Vertical profile fixing |
US7341953B2 (en) * | 2006-04-17 | 2008-03-11 | Lam Research Corporation | Mask profile control for controlling feature profile |
CN104465386A (zh) * | 2013-09-24 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构的形成方法 |
CN107968046B (zh) * | 2016-10-20 | 2020-09-04 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
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US4613400A (en) * | 1985-05-20 | 1986-09-23 | Applied Materials, Inc. | In-situ photoresist capping process for plasma etching |
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US4844773A (en) * | 1987-07-16 | 1989-07-04 | Texas Instruments Incorporated | Process for etching silicon nitride film |
JP2824584B2 (ja) * | 1989-05-25 | 1998-11-11 | 日本電信電話株式会社 | ドライエツチング方法 |
JP3729869B2 (ja) * | 1990-09-28 | 2005-12-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2758771B2 (ja) * | 1992-03-11 | 1998-05-28 | シャープ株式会社 | 素子分離領域の形成方法 |
US5275692A (en) * | 1992-06-22 | 1994-01-04 | Keystone Applied Research | Method for fabricating integrated circuits |
US5332653A (en) * | 1992-07-01 | 1994-07-26 | Motorola, Inc. | Process for forming a conductive region without photoresist-related reflective notching damage |
JPH08321484A (ja) * | 1995-05-24 | 1996-12-03 | Nec Corp | 半導体装置の製造方法 |
US5726102A (en) * | 1996-06-10 | 1998-03-10 | Vanguard International Semiconductor Corporation | Method for controlling etch bias in plasma etch patterning of integrated circuit layers |
-
1997
- 1997-12-23 US US08/997,346 patent/US6121154A/en not_active Expired - Lifetime
-
1998
- 1998-12-11 EP EP98963904A patent/EP1042791B1/en not_active Expired - Lifetime
- 1998-12-11 DE DE69840237T patent/DE69840237D1/de not_active Expired - Lifetime
- 1998-12-11 KR KR1020007006881A patent/KR100595090B1/ko not_active IP Right Cessation
- 1998-12-11 JP JP2000525911A patent/JP4351806B2/ja not_active Expired - Fee Related
- 1998-12-11 WO PCT/US1998/026502 patent/WO1999033095A1/en active IP Right Grant
- 1998-12-15 TW TW087120862A patent/TW464976B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101414307B1 (ko) * | 2006-05-17 | 2014-08-06 | 램 리써치 코포레이션 | 반도체 처리에 있어서 마스크를 제공하는 방법 및 장치 |
Also Published As
Publication number | Publication date |
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DE69840237D1 (de) | 2009-01-02 |
KR20010033406A (ko) | 2001-04-25 |
WO1999033095A1 (en) | 1999-07-01 |
EP1042791B1 (en) | 2008-11-19 |
US6121154A (en) | 2000-09-19 |
JP4351806B2 (ja) | 2009-10-28 |
TW464976B (en) | 2001-11-21 |
JP2001527287A (ja) | 2001-12-25 |
EP1042791A1 (en) | 2000-10-11 |
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