JP4548561B2 - プラズマエッチング中のマスクの腐食を軽減する方法 - Google Patents

プラズマエッチング中のマスクの腐食を軽減する方法 Download PDF

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Publication number
JP4548561B2
JP4548561B2 JP2000530927A JP2000530927A JP4548561B2 JP 4548561 B2 JP4548561 B2 JP 4548561B2 JP 2000530927 A JP2000530927 A JP 2000530927A JP 2000530927 A JP2000530927 A JP 2000530927A JP 4548561 B2 JP4548561 B2 JP 4548561B2
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mask
power cycle
cycle
etching
during
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JP2002503029A5 (enExample
JP2002503029A (ja
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ウィニチェック・ジャロスロー・ダブリュ．
ヴァヘディ・ヴァヒド
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2000530927A 1998-02-04 1999-02-02 プラズマエッチング中のマスクの腐食を軽減する方法 Expired - Lifetime JP4548561B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/018,448 US6093332A (en) 1998-02-04 1998-02-04 Methods for reducing mask erosion during plasma etching
US09/018,448 1998-02-04
PCT/US1999/002224 WO1999040607A1 (en) 1998-02-04 1999-02-02 Methods for reducing mask erosion during plasma etching

Publications (3)

Publication Number Publication Date
JP2002503029A JP2002503029A (ja) 2002-01-29
JP2002503029A5 JP2002503029A5 (enExample) 2006-04-27
JP4548561B2 true JP4548561B2 (ja) 2010-09-22

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ID=21787981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000530927A Expired - Lifetime JP4548561B2 (ja) 1998-02-04 1999-02-02 プラズマエッチング中のマスクの腐食を軽減する方法

Country Status (7)

Country Link
US (2) US6093332A (enExample)
EP (1) EP1053563B1 (enExample)
JP (1) JP4548561B2 (enExample)
KR (1) KR100604741B1 (enExample)
AT (1) ATE244453T1 (enExample)
DE (1) DE69909248T2 (enExample)
WO (1) WO1999040607A1 (enExample)

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WO1999046810A1 (en) * 1998-03-12 1999-09-16 Hitachi, Ltd. Method for processing surface of sample
US6492277B1 (en) * 1999-09-10 2002-12-10 Hitachi, Ltd. Specimen surface processing method and apparatus
KR100768610B1 (ko) * 1998-12-11 2007-10-18 서페이스 테크놀로지 시스템스 피엘씨 플라즈마 처리장치
US6255221B1 (en) * 1998-12-17 2001-07-03 Lam Research Corporation Methods for running a high density plasma etcher to achieve reduced transistor device damage
JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
KR100750420B1 (ko) * 1999-08-17 2007-08-21 동경 엘렉트론 주식회사 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
WO2003036703A1 (en) * 2001-10-22 2003-05-01 Unaxis Usa, Inc. Process and apparatus for etching of thin, damage sensitive layers using high frequency pulsed plasma
EP1444726A4 (en) * 2001-10-22 2008-08-13 Unaxis Usa Inc METHOD AND DEVICE FOR Etching PHOTOMASCIC SUBSTRATES USING PULSED PLASMA
TW567394B (en) * 2001-10-22 2003-12-21 Unaxis Usa Inc Apparatus for processing a photomask, method for processing a substrate, and method of employing a plasma reactor to etch a thin film upon a substrate
TWI315966B (en) * 2002-02-20 2009-10-11 Panasonic Elec Works Co Ltd Plasma processing device and plasma processing method
US20030235998A1 (en) * 2002-06-24 2003-12-25 Ming-Chung Liang Method for eliminating standing waves in a photoresist profile
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US6759339B1 (en) * 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US7446050B2 (en) * 2003-08-04 2008-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Etching and plasma treatment process to improve a gate profile
JP2005072260A (ja) * 2003-08-25 2005-03-17 Sanyo Electric Co Ltd プラズマ処理方法、プラズマエッチング方法、固体撮像素子の製造方法
US7879510B2 (en) * 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7449414B2 (en) * 2006-08-07 2008-11-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7642193B2 (en) * 2006-08-07 2010-01-05 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7572386B2 (en) 2006-08-07 2009-08-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
JP5271267B2 (ja) * 2006-08-07 2013-08-21 東京エレクトロン株式会社 エッチング処理を実行する前のマスク層処理方法
US8192576B2 (en) * 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP5295748B2 (ja) * 2008-12-18 2013-09-18 東京エレクトロン株式会社 構成部品の洗浄方法及び記憶媒体
US9105705B2 (en) * 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN103871865B (zh) * 2012-12-18 2016-08-17 中微半导体设备(上海)有限公司 一种清洁等离子体反应腔侧壁的方法
US9818841B2 (en) 2015-05-15 2017-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with unleveled gate structure and method for forming the same
US9583485B2 (en) 2015-05-15 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
US11915932B2 (en) * 2021-04-28 2024-02-27 Applied Materials, Inc. Plasma etching of mask materials
KR20240026068A (ko) * 2021-06-29 2024-02-27 램 리써치 코포레이션 고 종횡비 에칭을 위한 다중 상태 펄싱
US20250029818A1 (en) * 2022-04-13 2025-01-23 Hitachi High-Tech Corporation Plasma processing method and plasma processing device
US12217935B2 (en) 2022-05-22 2025-02-04 Tokyo Electron Limited Plasma processing methods using multiphase multifrequency bias pulses

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FI62692C (fi) * 1981-05-20 1983-02-10 Valmet Oy Pappersmaskinspress med bred presszon
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPH088237B2 (ja) * 1986-10-17 1996-01-29 株式会社日立製作所 プラズマ処理方法
DE3733135C1 (de) * 1987-10-01 1988-09-22 Leybold Ag Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
DE69017744T2 (de) * 1989-04-27 1995-09-14 Fuji Electric Co Ltd Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas.
US4889588A (en) * 1989-05-01 1989-12-26 Tegal Corporation Plasma etch isotropy control
JPH07226397A (ja) * 1994-02-10 1995-08-22 Tokyo Electron Ltd エッチング処理方法
JP2764524B2 (ja) * 1993-09-28 1998-06-11 名古屋大学長 ラジカルの制御装置
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
US5614060A (en) * 1995-03-23 1997-03-25 Applied Materials, Inc. Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal
JP3201223B2 (ja) * 1995-07-17 2001-08-20 株式会社日立製作所 プラズマ処理方法および装置
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate

Also Published As

Publication number Publication date
WO1999040607A1 (en) 1999-08-12
EP1053563A1 (en) 2000-11-22
DE69909248T2 (de) 2004-05-27
EP1053563B1 (en) 2003-07-02
KR100604741B1 (ko) 2006-07-26
US6093332A (en) 2000-07-25
US6489245B1 (en) 2002-12-03
JP2002503029A (ja) 2002-01-29
DE69909248D1 (de) 2003-08-07
ATE244453T1 (de) 2003-07-15
KR20010040638A (ko) 2001-05-15

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