ATE244453T1 - Verfahren zur verminderung der erosion einer maske während eines plasmaätzens - Google Patents

Verfahren zur verminderung der erosion einer maske während eines plasmaätzens

Info

Publication number
ATE244453T1
ATE244453T1 AT99904542T AT99904542T ATE244453T1 AT E244453 T1 ATE244453 T1 AT E244453T1 AT 99904542 T AT99904542 T AT 99904542T AT 99904542 T AT99904542 T AT 99904542T AT E244453 T1 ATE244453 T1 AT E244453T1
Authority
AT
Austria
Prior art keywords
mask
mask during
power
pulse frequency
reducing erosion
Prior art date
Application number
AT99904542T
Other languages
German (de)
English (en)
Inventor
Jaroslaw W Winniczek
Vahid Vahedi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE244453T1 publication Critical patent/ATE244453T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
AT99904542T 1998-02-04 1999-02-02 Verfahren zur verminderung der erosion einer maske während eines plasmaätzens ATE244453T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/018,448 US6093332A (en) 1998-02-04 1998-02-04 Methods for reducing mask erosion during plasma etching
PCT/US1999/002224 WO1999040607A1 (en) 1998-02-04 1999-02-02 Methods for reducing mask erosion during plasma etching

Publications (1)

Publication Number Publication Date
ATE244453T1 true ATE244453T1 (de) 2003-07-15

Family

ID=21787981

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99904542T ATE244453T1 (de) 1998-02-04 1999-02-02 Verfahren zur verminderung der erosion einer maske während eines plasmaätzens

Country Status (7)

Country Link
US (2) US6093332A (enExample)
EP (1) EP1053563B1 (enExample)
JP (1) JP4548561B2 (enExample)
KR (1) KR100604741B1 (enExample)
AT (1) ATE244453T1 (enExample)
DE (1) DE69909248T2 (enExample)
WO (1) WO1999040607A1 (enExample)

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JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
KR100750420B1 (ko) * 1999-08-17 2007-08-21 동경 엘렉트론 주식회사 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터
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WO2003036703A1 (en) * 2001-10-22 2003-05-01 Unaxis Usa, Inc. Process and apparatus for etching of thin, damage sensitive layers using high frequency pulsed plasma
EP1444726A4 (en) * 2001-10-22 2008-08-13 Unaxis Usa Inc METHOD AND DEVICE FOR Etching PHOTOMASCIC SUBSTRATES USING PULSED PLASMA
TW567394B (en) * 2001-10-22 2003-12-21 Unaxis Usa Inc Apparatus for processing a photomask, method for processing a substrate, and method of employing a plasma reactor to etch a thin film upon a substrate
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US20030235998A1 (en) * 2002-06-24 2003-12-25 Ming-Chung Liang Method for eliminating standing waves in a photoresist profile
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US6759339B1 (en) * 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US7446050B2 (en) * 2003-08-04 2008-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Etching and plasma treatment process to improve a gate profile
JP2005072260A (ja) * 2003-08-25 2005-03-17 Sanyo Electric Co Ltd プラズマ処理方法、プラズマエッチング方法、固体撮像素子の製造方法
US7879510B2 (en) * 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7449414B2 (en) * 2006-08-07 2008-11-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7642193B2 (en) * 2006-08-07 2010-01-05 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7572386B2 (en) 2006-08-07 2009-08-11 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
JP5271267B2 (ja) * 2006-08-07 2013-08-21 東京エレクトロン株式会社 エッチング処理を実行する前のマスク層処理方法
US8192576B2 (en) * 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP5295748B2 (ja) * 2008-12-18 2013-09-18 東京エレクトロン株式会社 構成部品の洗浄方法及び記憶媒体
US9105705B2 (en) * 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN103871865B (zh) * 2012-12-18 2016-08-17 中微半导体设备(上海)有限公司 一种清洁等离子体反应腔侧壁的方法
US9818841B2 (en) 2015-05-15 2017-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with unleveled gate structure and method for forming the same
US9583485B2 (en) 2015-05-15 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
US11915932B2 (en) * 2021-04-28 2024-02-27 Applied Materials, Inc. Plasma etching of mask materials
KR20240026068A (ko) * 2021-06-29 2024-02-27 램 리써치 코포레이션 고 종횡비 에칭을 위한 다중 상태 펄싱
US20250029818A1 (en) * 2022-04-13 2025-01-23 Hitachi High-Tech Corporation Plasma processing method and plasma processing device
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JPH088237B2 (ja) * 1986-10-17 1996-01-29 株式会社日立製作所 プラズマ処理方法
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Also Published As

Publication number Publication date
WO1999040607A1 (en) 1999-08-12
EP1053563A1 (en) 2000-11-22
DE69909248T2 (de) 2004-05-27
EP1053563B1 (en) 2003-07-02
KR100604741B1 (ko) 2006-07-26
US6093332A (en) 2000-07-25
JP4548561B2 (ja) 2010-09-22
US6489245B1 (en) 2002-12-03
JP2002503029A (ja) 2002-01-29
DE69909248D1 (de) 2003-08-07
KR20010040638A (ko) 2001-05-15

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