DE69903531T2 - Verfahren zur passivierung einer cvd-kammer - Google Patents

Verfahren zur passivierung einer cvd-kammer

Info

Publication number
DE69903531T2
DE69903531T2 DE69903531T DE69903531T DE69903531T2 DE 69903531 T2 DE69903531 T2 DE 69903531T2 DE 69903531 T DE69903531 T DE 69903531T DE 69903531 T DE69903531 T DE 69903531T DE 69903531 T2 DE69903531 T2 DE 69903531T2
Authority
DE
Germany
Prior art keywords
passivating
cvd chamber
cvd
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69903531T
Other languages
English (en)
Other versions
DE69903531D1 (de
Inventor
S Ameen
T Hillman
Gert Leusink
Michael Ward
Tugrul Yasar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69903531D1 publication Critical patent/DE69903531D1/de
Publication of DE69903531T2 publication Critical patent/DE69903531T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69903531T 1998-04-20 1999-04-14 Verfahren zur passivierung einer cvd-kammer Expired - Lifetime DE69903531T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/063,196 US6635569B1 (en) 1998-04-20 1998-04-20 Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
PCT/US1999/008193 WO1999054522A1 (en) 1998-04-20 1999-04-14 Method of passivating a cvd chamber

Publications (2)

Publication Number Publication Date
DE69903531D1 DE69903531D1 (de) 2002-11-21
DE69903531T2 true DE69903531T2 (de) 2003-06-18

Family

ID=22047603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69903531T Expired - Lifetime DE69903531T2 (de) 1998-04-20 1999-04-14 Verfahren zur passivierung einer cvd-kammer

Country Status (8)

Country Link
US (1) US6635569B1 (de)
EP (1) EP1071834B1 (de)
JP (1) JP3730865B2 (de)
KR (1) KR100421572B1 (de)
CN (1) CN1168849C (de)
DE (1) DE69903531T2 (de)
TW (1) TW504522B (de)
WO (1) WO1999054522A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016118345A1 (de) * 2016-08-01 2018-02-01 Aixtron Se Konditionierverfahren für einen CVD-Reaktor

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WO2007105432A1 (ja) * 2006-02-24 2007-09-20 Tokyo Electron Limited Ｔｉ系膜の成膜方法および記憶媒体
KR100914354B1 (ko) * 2006-06-05 2009-08-28 어플라이드 머티어리얼스, 인코포레이티드 Ｐｅｃｖｄ막에 대한 1차 웨이퍼 효과 제거
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CN103484933A (zh) * 2013-10-22 2014-01-01 西安电子科技大学 外延化学气相淀积设备的清洗方法
JP6284786B2 (ja) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
KR102504290B1 (ko) 2015-12-04 2023-02-28 삼성전자 주식회사 수소 플라스마 어닐링 처리 준비 방법, 수소 플라스마 어닐링 처리 방법, 및 수소 플라스마 어닐링 장치
JP6583054B2 (ja) * 2016-02-26 2019-10-02 東京エレクトロン株式会社 基板処理方法及び記憶媒体
JP2019151892A (ja) * 2018-03-02 2019-09-12 東京エレクトロン株式会社 金属部材の処理方法、処理装置及び評価方法
US10734219B2 (en) * 2018-09-26 2020-08-04 Asm Ip Holdings B.V. Plasma film forming method
JP7296002B2 (ja) * 2018-11-15 2023-06-21 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7155390B2 (ja) * 2019-02-28 2022-10-18 株式会社Kokusai Electric 基板処理方法、基板処理装置、プログラム及び半導体装置の製造方法
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CN113770122A (zh) * 2021-09-13 2021-12-10 浙江爱旭太阳能科技有限公司 一种pecvd设备的清理方法
JP2023059613A (ja) 2021-10-15 2023-04-27 東京エレクトロン株式会社 パーティクル抑制方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016118345A1 (de) * 2016-08-01 2018-02-01 Aixtron Se Konditionierverfahren für einen CVD-Reaktor
WO2018024698A1 (de) 2016-08-01 2018-02-08 Aixtron Se Konditionierverfahren für einen cvd-reaktor

Also Published As

Publication number Publication date
JP3730865B2 (ja) 2006-01-05
CN1168849C (zh) 2004-09-29
KR100421572B1 (ko) 2004-03-09
WO1999054522A1 (en) 1999-10-28
CN1319146A (zh) 2001-10-24
EP1071834B1 (de) 2002-10-16
US6635569B1 (en) 2003-10-21
TW504522B (en) 2002-10-01
EP1071834A1 (de) 2001-01-31
KR20010042889A (ko) 2001-05-25
JP2002512307A (ja) 2002-04-23
DE69903531D1 (de) 2002-11-21

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