DE69900728D1 - Mehrfachanordnung von Laserdioden - Google Patents

Mehrfachanordnung von Laserdioden

Info

Publication number
DE69900728D1
DE69900728D1 DE69900728T DE69900728T DE69900728D1 DE 69900728 D1 DE69900728 D1 DE 69900728D1 DE 69900728 T DE69900728 T DE 69900728T DE 69900728 T DE69900728 T DE 69900728T DE 69900728 D1 DE69900728 D1 DE 69900728D1
Authority
DE
Germany
Prior art keywords
laser diodes
multiple array
array
diodes
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69900728T
Other languages
English (en)
Other versions
DE69900728T2 (de
Inventor
Isao Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69900728D1 publication Critical patent/DE69900728D1/de
Publication of DE69900728T2 publication Critical patent/DE69900728T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H01S5/0238—Positioning of the laser chips using marks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69900728T 1998-02-16 1999-02-12 Mehrfachanordnung von Laserdioden Expired - Fee Related DE69900728T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10033410A JPH11233877A (ja) 1998-02-16 1998-02-16 アレイ型レーザダイオード

Publications (2)

Publication Number Publication Date
DE69900728D1 true DE69900728D1 (de) 2002-02-28
DE69900728T2 DE69900728T2 (de) 2002-09-26

Family

ID=12385832

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69900728T Expired - Fee Related DE69900728T2 (de) 1998-02-16 1999-02-12 Mehrfachanordnung von Laserdioden

Country Status (4)

Country Link
US (1) US6353625B1 (de)
EP (1) EP0936706B1 (de)
JP (1) JPH11233877A (de)
DE (1) DE69900728T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002314184A (ja) * 2001-04-11 2002-10-25 Nec Corp 光半導体モジュール
JP3967318B2 (ja) * 2003-12-26 2007-08-29 株式会社東芝 光伝送路保持部材
JP2006012899A (ja) * 2004-06-22 2006-01-12 Sharp Corp 半導体レーザ素子および半導体レーザ素子の製造方法
US8395568B2 (en) * 2007-05-31 2013-03-12 Nthdegree Technologies Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
JP2011014632A (ja) 2009-06-30 2011-01-20 Sony Corp 半導体レーザ
DE102009058345B4 (de) 2009-12-15 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
DE102010045782B4 (de) 2010-09-17 2018-09-06 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines kantenemittierenden Halbleiterlasers und kantenemittierender Halbleiterlaser
DE102017119664A1 (de) 2017-08-28 2019-02-28 Osram Opto Semiconductors Gmbh Kantenemittierender Laserbarren
CN113687521B (zh) * 2021-07-30 2024-02-09 哈尔滨工业大学 基于波前校正的低像差高精度二维光电自准直方法与装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52129291A (en) * 1976-04-21 1977-10-29 Sharp Corp Semiconductor laser device
JPS58124972A (ja) 1982-01-20 1983-07-25 Nec Corp 半導体装置の信頼性試験方法
JPS63276287A (ja) * 1987-05-08 1988-11-14 Fujitsu Ltd 半導体発光装置
JPS6457782A (en) * 1987-08-28 1989-03-06 Mitsubishi Electric Corp Semiconductor laser
JPS6461085A (en) 1987-09-01 1989-03-08 Nec Corp Semiconductor laser
JPH02103987A (ja) 1988-07-22 1990-04-17 Nec Corp 半導体レーザアレイ装置
JPH03206678A (ja) * 1990-01-08 1991-09-10 Nec Corp 半導体レーザー
JPH05152683A (ja) 1991-06-28 1993-06-18 Fuji Xerox Co Ltd マルチビーム半導体レーザーアレイ
JP2768852B2 (ja) * 1991-08-27 1998-06-25 三菱電機株式会社 半導体光デバイス及びその組立方法
JPH0567840A (ja) * 1991-09-10 1993-03-19 Toshiba Corp マルチビーム半導体レーザ装置
JP2937740B2 (ja) 1994-04-11 1999-08-23 日本電気株式会社 分布帰還型半導体レーザ
JPH07335969A (ja) * 1994-06-08 1995-12-22 Hitachi Ltd 半導体レーザ素子及び半導体レーザアレイ素子
JP2861858B2 (ja) * 1995-03-30 1999-02-24 日本電気株式会社 多重量子井戸レーザダイオード
JP3732551B2 (ja) * 1995-05-15 2006-01-05 株式会社東芝 半導体装置の製造方法
JP3635470B2 (ja) * 1995-08-25 2005-04-06 富士通株式会社 光送信器用半導体光源および光送信モジュール
JPH09129970A (ja) * 1995-10-31 1997-05-16 Nec Corp レーザダイオード素子

Also Published As

Publication number Publication date
JPH11233877A (ja) 1999-08-27
EP0936706B1 (de) 2002-01-02
DE69900728T2 (de) 2002-09-26
US6353625B1 (en) 2002-03-05
EP0936706A1 (de) 1999-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee