DE69837909T2 - Herstellungsverfahren für ein halbleiterbauelement - Google Patents

Herstellungsverfahren für ein halbleiterbauelement Download PDF

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Publication number
DE69837909T2
DE69837909T2 DE69837909T DE69837909T DE69837909T2 DE 69837909 T2 DE69837909 T2 DE 69837909T2 DE 69837909 T DE69837909 T DE 69837909T DE 69837909 T DE69837909 T DE 69837909T DE 69837909 T2 DE69837909 T2 DE 69837909T2
Authority
DE
Germany
Prior art keywords
film
silicon
silicon substrate
titanium
titanium film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69837909T
Other languages
German (de)
English (en)
Other versions
DE69837909D1 (de
Inventor
Kotaro Tenri-shi KATAOKA
Hiroshi Ikomagun IWATA
Masayuki Nara-shi NAKANO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69837909D1 publication Critical patent/DE69837909D1/de
Application granted granted Critical
Publication of DE69837909T2 publication Critical patent/DE69837909T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/0131—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69837909T 1997-04-25 1998-04-23 Herstellungsverfahren für ein halbleiterbauelement Expired - Lifetime DE69837909T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10867197A JP4101901B2 (ja) 1997-04-25 1997-04-25 半導体装置の製造方法
JP10867197 1997-04-25
PCT/JP1998/001892 WO1998049724A1 (fr) 1997-04-25 1998-04-23 Procede de fabrication de dispositif a semi-conducteurs

Publications (2)

Publication Number Publication Date
DE69837909D1 DE69837909D1 (de) 2007-07-26
DE69837909T2 true DE69837909T2 (de) 2008-02-14

Family

ID=14490735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69837909T Expired - Lifetime DE69837909T2 (de) 1997-04-25 1998-04-23 Herstellungsverfahren für ein halbleiterbauelement

Country Status (6)

Country Link
US (2) US6562699B1 (https=)
EP (1) EP0928021B1 (https=)
JP (1) JP4101901B2 (https=)
KR (1) KR100399492B1 (https=)
DE (1) DE69837909T2 (https=)
WO (1) WO1998049724A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4101901B2 (ja) * 1997-04-25 2008-06-18 シャープ株式会社 半導体装置の製造方法
GB2360292B (en) * 2000-03-15 2002-04-03 Murata Manufacturing Co Photosensitive thick film composition and electronic device using the same
US7721491B2 (en) * 2004-07-23 2010-05-25 Jennifer Appel Method and system for storing water inside buildings
US20060057853A1 (en) * 2004-09-15 2006-03-16 Manoj Mehrotra Thermal oxidation for improved silicide formation
TW200816312A (en) * 2006-09-28 2008-04-01 Promos Technologies Inc Method for forming silicide layer on a silicon surface and its use
JP5076557B2 (ja) * 2007-03-06 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
US10446662B2 (en) * 2016-10-07 2019-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3095564B2 (ja) * 1992-05-29 2000-10-03 株式会社東芝 半導体装置及び半導体装置の製造方法
US3601666A (en) * 1969-08-21 1971-08-24 Texas Instruments Inc Titanium tungsten-gold contacts for semiconductor devices
US4629611A (en) * 1985-04-29 1986-12-16 International Business Machines Corporation Gas purifier for rare-gas fluoride lasers
JPS61258434A (ja) 1985-05-13 1986-11-15 Nec Corp 半導体装置の製造方法
JPH0682641B2 (ja) 1985-10-21 1994-10-19 日本電気株式会社 半導体集積回路装置の製造方法
US4690730A (en) * 1986-03-07 1987-09-01 Texas Instruments Incorporated Oxide-capped titanium silicide formation
US4981550A (en) * 1987-09-25 1991-01-01 At&T Bell Laboratories Semiconductor device having tungsten plugs
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4981816A (en) * 1988-10-27 1991-01-01 General Electric Company MO/TI Contact to silicon
US5084417A (en) * 1989-01-06 1992-01-28 International Business Machines Corporation Method for selective deposition of refractory metals on silicon substrates and device formed thereby
JP2660359B2 (ja) * 1991-01-30 1997-10-08 三菱電機株式会社 半導体装置
KR970009867B1 (ko) * 1993-12-17 1997-06-18 현대전자산업 주식회사 반도체 소자의 텅스텐 실리사이드 형성방법
JPH08115890A (ja) 1994-10-17 1996-05-07 Fujitsu Ltd 半導体基板上への電極形成方法
JP2630290B2 (ja) * 1995-01-30 1997-07-16 日本電気株式会社 半導体装置の製造方法
JPH08213343A (ja) * 1995-01-31 1996-08-20 Sony Corp 半導体装置およびその製造方法
JPH08250463A (ja) 1995-03-07 1996-09-27 Nippon Steel Corp 半導体装置の製造方法
US5972790A (en) * 1995-06-09 1999-10-26 Tokyo Electron Limited Method for forming salicides
US5595784A (en) * 1995-08-01 1997-01-21 Kaim; Robert Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
US5830802A (en) * 1995-08-31 1998-11-03 Motorola Inc. Process for reducing halogen concentration in a material layer during semiconductor device fabrication
EP0793271A3 (en) * 1996-02-22 1998-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
JPH09320990A (ja) * 1996-03-25 1997-12-12 Sharp Corp 半導体装置の製造方法
US5963828A (en) * 1996-12-23 1999-10-05 Lsi Logic Corporation Method for tungsten nucleation from WF6 using titanium as a reducing agent
JP4101901B2 (ja) * 1997-04-25 2008-06-18 シャープ株式会社 半導体装置の製造方法
KR19990041688A (ko) * 1997-11-24 1999-06-15 김규현 티타늄 샐리사이드 형성 방법

Also Published As

Publication number Publication date
EP0928021B1 (en) 2007-06-13
EP0928021A1 (en) 1999-07-07
EP0928021A4 (en) 2000-12-06
US7135386B2 (en) 2006-11-14
JP4101901B2 (ja) 2008-06-18
DE69837909D1 (de) 2007-07-26
KR20000016675A (ko) 2000-03-25
KR100399492B1 (ko) 2003-12-24
US20030170967A1 (en) 2003-09-11
JPH10303145A (ja) 1998-11-13
US6562699B1 (en) 2003-05-13
WO1998049724A1 (fr) 1998-11-05

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