DE69836981T2 - VERFAHREN ZUM BETRIEB EINES SILIZIUM-OXID-ISOLATOR (SOI)-HALBLEITERs MIT SELEKTIV ANGESCHLOSSENEM BEREICH - Google Patents

VERFAHREN ZUM BETRIEB EINES SILIZIUM-OXID-ISOLATOR (SOI)-HALBLEITERs MIT SELEKTIV ANGESCHLOSSENEM BEREICH Download PDF

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Publication number
DE69836981T2
DE69836981T2 DE69836981T DE69836981T DE69836981T2 DE 69836981 T2 DE69836981 T2 DE 69836981T2 DE 69836981 T DE69836981 T DE 69836981T DE 69836981 T DE69836981 T DE 69836981T DE 69836981 T2 DE69836981 T2 DE 69836981T2
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Prior art keywords
area
soi
conductivity type
region
transistor
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Expired - Lifetime
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DE69836981T
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German (de)
English (en)
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DE69836981D1 (de
Inventor
Donald Saratoga WOLLESEN
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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Publication of DE69836981D1 publication Critical patent/DE69836981D1/de
Publication of DE69836981T2 publication Critical patent/DE69836981T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
DE69836981T 1997-12-16 1998-12-16 VERFAHREN ZUM BETRIEB EINES SILIZIUM-OXID-ISOLATOR (SOI)-HALBLEITERs MIT SELEKTIV ANGESCHLOSSENEM BEREICH Expired - Lifetime DE69836981T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/991,808 US6020222A (en) 1997-12-16 1997-12-16 Silicon oxide insulator (SOI) semiconductor having selectively linked body
US991808 1997-12-16
PCT/US1998/027030 WO1999031731A2 (en) 1997-12-16 1998-12-16 Silicon oxide insulator (soi) semiconductor having selectively linked body

Publications (2)

Publication Number Publication Date
DE69836981D1 DE69836981D1 (de) 2007-03-15
DE69836981T2 true DE69836981T2 (de) 2007-11-22

Family

ID=25537598

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69836981T Expired - Lifetime DE69836981T2 (de) 1997-12-16 1998-12-16 VERFAHREN ZUM BETRIEB EINES SILIZIUM-OXID-ISOLATOR (SOI)-HALBLEITERs MIT SELEKTIV ANGESCHLOSSENEM BEREICH

Country Status (6)

Country Link
US (3) US6020222A (enExample)
EP (1) EP1040521B1 (enExample)
JP (2) JP2002509360A (enExample)
KR (1) KR100562538B1 (enExample)
DE (1) DE69836981T2 (enExample)
WO (1) WO1999031731A2 (enExample)

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Also Published As

Publication number Publication date
EP1040521B1 (en) 2007-01-24
EP1040521A2 (en) 2000-10-04
US5994738A (en) 1999-11-30
KR20010024753A (ko) 2001-03-26
US6627952B1 (en) 2003-09-30
WO1999031731A3 (en) 1999-09-16
WO1999031731A2 (en) 1999-06-24
US6020222A (en) 2000-02-01
JP2002509360A (ja) 2002-03-26
KR100562538B1 (ko) 2006-03-22
JP2008193101A (ja) 2008-08-21
DE69836981D1 (de) 2007-03-15

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8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,