JP2002509360A - 選択的に連結された本体を有するシリコン酸化物絶縁体（ｓｏｉ）半導体 - Google Patents

選択的に連結された本体を有するシリコン酸化物絶縁体（ｓｏｉ）半導体

Info

Publication number
JP2002509360A
JP2002509360A JP2000539529A JP2000539529A JP2002509360A JP 2002509360 A JP2002509360 A JP 2002509360A JP 2000539529 A JP2000539529 A JP 2000539529A JP 2000539529 A JP2000539529 A JP 2000539529A JP 2002509360 A JP2002509360 A JP 2002509360A
Authority
JP
Japan
Prior art keywords
region
soi
transistor
conductivity type
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000539529A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002509360A5 (enExample
Inventor
ウォレセン，ドナルド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2002509360A publication Critical patent/JP2002509360A/ja
Publication of JP2002509360A5 publication Critical patent/JP2002509360A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
JP2000539529A 1997-12-16 1998-12-16 選択的に連結された本体を有するシリコン酸化物絶縁体（ｓｏｉ）半導体 Pending JP2002509360A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/991,808 1997-12-16
US08/991,808 US6020222A (en) 1997-12-16 1997-12-16 Silicon oxide insulator (SOI) semiconductor having selectively linked body
PCT/US1998/027030 WO1999031731A2 (en) 1997-12-16 1998-12-16 Silicon oxide insulator (soi) semiconductor having selectively linked body

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008030550A Division JP2008193101A (ja) 1997-12-16 2008-02-12 半導体装置

Publications (2)

Publication Number Publication Date
JP2002509360A true JP2002509360A (ja) 2002-03-26
JP2002509360A5 JP2002509360A5 (enExample) 2006-01-26

Family

ID=25537598

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000539529A Pending JP2002509360A (ja) 1997-12-16 1998-12-16 選択的に連結された本体を有するシリコン酸化物絶縁体（ｓｏｉ）半導体
JP2008030550A Withdrawn JP2008193101A (ja) 1997-12-16 2008-02-12 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008030550A Withdrawn JP2008193101A (ja) 1997-12-16 2008-02-12 半導体装置

Country Status (6)

Country Link
US (3) US6020222A (enExample)
EP (1) EP1040521B1 (enExample)
JP (2) JP2002509360A (enExample)
KR (1) KR100562538B1 (enExample)
DE (1) DE69836981T2 (enExample)
WO (1) WO1999031731A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006203198A (ja) * 2005-01-19 2006-08-03 Internatl Business Mach Corp <Ibm> Ｓｒａｍアレイ、ｓｒａｍセル、マイクロプロセッサ、方法、ｓｒａｍメモリ（高性能シリコン基板に実現された論理部分と、連結されたボディを有する電界効果トランジスタを含むｓｒａｍアレイ部分とを備えるｓｒａｍメモリおよびマイクロプロセッサ、およびそれらの製造方法）
JP2007005780A (ja) * 2005-05-26 2007-01-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8809862B2 (en) 2005-05-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2022177013A (ja) * 2011-11-11 2022-11-30 株式会社半導体エネルギー研究所 発光装置

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940691A (en) 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices
GB2334633B (en) * 1998-02-21 2002-09-25 Mitel Corp Low leakage electrostatic discharge protection system
JP3517154B2 (ja) * 1998-04-30 2004-04-05 株式会社東芝 誘電体分離集積回路
JP3560480B2 (ja) * 1998-10-05 2004-09-02 シャープ株式会社 スタティック・ランダム・アクセスメモリ
US6188247B1 (en) 1999-01-29 2001-02-13 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in logic circuits for history removal under stack contention including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements
US6278157B1 (en) 1999-01-29 2001-08-21 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in logic circuits including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements
US6365934B1 (en) 1999-01-29 2002-04-02 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in complementary oxide semiconductor (CMOS) silicon on insulator (SOI) circuits
US6816824B2 (en) * 1999-04-19 2004-11-09 International Business Machines Corporation Method for statically timing SOI devices and circuits
US6154091A (en) * 1999-06-02 2000-11-28 International Business Machines Corporation SOI sense amplifier with body contact structure
TW476993B (en) * 2000-01-19 2002-02-21 Advanced Micro Devices Inc Silicon on insulator circuit structure with buried semiconductor interconnect structure and method for forming same
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6552396B1 (en) * 2000-03-14 2003-04-22 International Business Machines Corporation Matched transistors and methods for forming the same
CN1430792A (zh) * 2000-05-31 2003-07-16 摩托罗拉公司 半导体器件及方法
US6420767B1 (en) 2000-06-28 2002-07-16 Advanced Micro Devices, Inc. Capacitively coupled DTMOS on SOI
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6583459B1 (en) * 2000-06-30 2003-06-24 Stmicroelectronics, Inc. Random access memory cell and method for fabricating same
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6359298B1 (en) 2000-07-20 2002-03-19 Advanced Micro Devices, Inc. Capacitively coupled DTMOS on SOI for multiple devices
WO2002009187A2 (en) * 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6632686B1 (en) 2000-09-29 2003-10-14 Intel Corporation Silicon on insulator device design having improved floating body effect
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6441435B1 (en) 2001-01-31 2002-08-27 Advanced Micro Devices, Inc. SOI device with wrap-around contact to underside of body, and method of making
US6589823B1 (en) 2001-02-22 2003-07-08 Advanced Micro Devices, Inc. Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6373121B1 (en) * 2001-03-23 2002-04-16 United Microelectronics Corp. Silicon chip built-in inductor structure
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
JP2003008028A (ja) * 2001-06-27 2003-01-10 Seiko Epson Corp 半導体装置
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
KR100422468B1 (ko) * 2001-07-31 2004-03-11 삼성전자주식회사 에스 오 아이 소자 및 그 제조방법
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
US7173320B1 (en) * 2003-04-30 2007-02-06 Altera Corporation High performance lateral bipolar transistor
US7184298B2 (en) * 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
KR100501706B1 (ko) * 2003-10-16 2005-07-18 삼성에스디아이 주식회사 게이트-바디콘택 박막 트랜지스터
US7045873B2 (en) * 2003-12-08 2006-05-16 International Business Machines Corporation Dynamic threshold voltage MOSFET on SOI
US8398670B2 (en) 2004-03-19 2013-03-19 Aga Medical Corporation Multi-layer braided structures for occluding vascular defects and for occluding fluid flow through portions of the vasculature of the body
US8313505B2 (en) 2004-03-19 2012-11-20 Aga Medical Corporation Device for occluding vascular defects
US8777974B2 (en) 2004-03-19 2014-07-15 Aga Medical Corporation Multi-layer braided structures for occluding vascular defects
US8747453B2 (en) 2008-02-18 2014-06-10 Aga Medical Corporation Stent/stent graft for reinforcement of vascular abnormalities and associated method
US9039724B2 (en) 2004-03-19 2015-05-26 Aga Medical Corporation Device for occluding vascular defects
US20050228434A1 (en) * 2004-03-19 2005-10-13 Aga Medical Corporation Multi-layer braided structures for occluding vascular defects
US7511345B2 (en) * 2005-06-21 2009-03-31 Sarnoff Corporation Bulk resistance control technique
US7285480B1 (en) * 2006-04-07 2007-10-23 International Business Machines Corporation Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof
JP5042518B2 (ja) * 2006-04-12 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置
US8034061B2 (en) 2007-07-12 2011-10-11 Aga Medical Corporation Percutaneous catheter directed intravascular occlusion devices
WO2010032386A1 (ja) * 2008-09-17 2010-03-25 シャープ株式会社 半導体装置
US8698245B2 (en) 2010-12-14 2014-04-15 International Business Machines Corporation Partially depleted (PD) semiconductor-on-insulator (SOI) field effect transistor (FET) structure with a gate-to-body tunnel current region for threshold voltage (VT) lowering and method of forming the structure
CN102214679B (zh) * 2011-05-26 2012-12-05 上海先进半导体制造股份有限公司 形成于绝缘体上硅中的自隔离式高压半桥结构
CN107256890A (zh) * 2017-06-19 2017-10-17 西安理工大学 一种逆导型绝缘栅双极型晶体管及其制备方法
US20250113606A1 (en) * 2023-09-28 2025-04-03 Qualcomm Incorporated Body tied to source standard cell implementations in semiconductor-on-insulator (soi) technology

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05323362A (ja) * 1991-12-19 1993-12-07 Seiko Instr Inc 半導体装置及びその製造方法
JPH0685262A (ja) * 1992-09-07 1994-03-25 Nec Corp 電界効果トランジスタおよびその製造方法
JPH06291265A (ja) * 1992-02-25 1994-10-18 Seiko Instr Inc 半導体装置とその製造方法
JPH0774363A (ja) * 1993-07-05 1995-03-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
EP0724295A1 (en) * 1995-01-27 1996-07-31 Nec Corporation SOI-type semiconductor device with variable threshold voltages
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
US4250409A (en) * 1979-12-28 1981-02-10 Bell Telephone Laboratories, Incorporated Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5266825A (en) * 1989-10-18 1993-11-30 Hitachi, Ltd. Thin-film device
EP0488801B1 (en) * 1990-11-30 1998-02-04 Sharp Kabushiki Kaisha Thin-film semiconductor device
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
US5359219A (en) * 1992-12-04 1994-10-25 Texas Instruments Incorporated Silicon on insulator device comprising improved substrate doping
JP2773611B2 (ja) * 1993-11-17 1998-07-09 株式会社デンソー 絶縁物分離半導体装置
JPH08139319A (ja) * 1994-11-11 1996-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3176253B2 (ja) * 1995-05-25 2001-06-11 シャープ株式会社 回路基板
US5674760A (en) * 1996-02-26 1997-10-07 United Microelectronics Corporation Method of forming isolation regions in a MOS transistor device
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05323362A (ja) * 1991-12-19 1993-12-07 Seiko Instr Inc 半導体装置及びその製造方法
JPH06291265A (ja) * 1992-02-25 1994-10-18 Seiko Instr Inc 半導体装置とその製造方法
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
JPH0685262A (ja) * 1992-09-07 1994-03-25 Nec Corp 電界効果トランジスタおよびその製造方法
JPH0774363A (ja) * 1993-07-05 1995-03-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
EP0724295A1 (en) * 1995-01-27 1996-07-31 Nec Corporation SOI-type semiconductor device with variable threshold voltages

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006203198A (ja) * 2005-01-19 2006-08-03 Internatl Business Mach Corp <Ibm> Ｓｒａｍアレイ、ｓｒａｍセル、マイクロプロセッサ、方法、ｓｒａｍメモリ（高性能シリコン基板に実現された論理部分と、連結されたボディを有する電界効果トランジスタを含むｓｒａｍアレイ部分とを備えるｓｒａｍメモリおよびマイクロプロセッサ、およびそれらの製造方法）
JP2007005780A (ja) * 2005-05-26 2007-01-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8809862B2 (en) 2005-05-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9373723B2 (en) 2005-05-26 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2022177013A (ja) * 2011-11-11 2022-11-30 株式会社半導体エネルギー研究所 発光装置
JP7185803B2 (ja) 2011-11-11 2022-12-07 株式会社半導体エネルギー研究所 発光装置
JP2022189858A (ja) * 2011-11-11 2022-12-22 株式会社半導体エネルギー研究所 発光装置
JP7202503B2 (ja) 2011-11-11 2023-01-11 株式会社半導体エネルギー研究所 発光装置

Also Published As

Publication number Publication date
EP1040521B1 (en) 2007-01-24
EP1040521A2 (en) 2000-10-04
US5994738A (en) 1999-11-30
KR20010024753A (ko) 2001-03-26
US6627952B1 (en) 2003-09-30
WO1999031731A3 (en) 1999-09-16
WO1999031731A2 (en) 1999-06-24
US6020222A (en) 2000-02-01
DE69836981T2 (de) 2007-11-22
KR100562538B1 (ko) 2006-03-22
JP2008193101A (ja) 2008-08-21
DE69836981D1 (de) 2007-03-15

Similar Documents

Publication Publication Date Title
EP1040521B1 (en) Method of operating a silicon oxide insulator (soi) semiconductor having selectively linked body
CN111668288B (zh) 重度掺杂掩埋层以减少mosfet截止电容
US5567961A (en) Semiconductor device
JP3992855B2 (ja) 静電気放電保護のための回路
US4672584A (en) CMOS integrated circuit
US20050218449A1 (en) Semiconductor device realizing characteristics like a SOI mosfet
KR19990066747A (ko) 반도체 장치
JP2009064860A (ja) 半導体装置
JP3325396B2 (ja) 半導体集積回路
EP0854519B1 (en) SOI MOS field effect transistor
JPH03190426A (ja) 集積ＢｉＣＭＯＳ回路
CN102714225A (zh) 结型场效应晶体管及其制造方法
CN101599490B (zh) 双极性装置
US8110454B2 (en) Methods of forming drain extended transistors
US7667499B2 (en) MuGFET circuit for increasing output resistance
US5994177A (en) Dynamic threshold MOSFET using accumulated base BJT level shifter for low voltage sub-quarter micron transistor
US7816212B2 (en) Method of high voltage operation of a field effect transistor
US4476479A (en) Semiconductor device with operating voltage coupling region
JP2006270027A (ja) 半導体装置および相補形ｍｉｓ論理回路
US20030222308A1 (en) SOI MOSFET with compact body-tied-source structure
JPH0493076A (ja) 半導体集積回路装置
KR20010080699A (ko) 아날로그 스위치
JPS59184560A (ja) 半導体接点構造体
JPH02210862A (ja) 半導体装置
JP2003303834A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051130

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051130

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070717

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071106

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080205

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080222

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081028

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081211

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090120

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20090403