DE69834020D1 - Kapazitiv gekoppelter rf plasmareaktor und verfahren zur herstellung von werkstücken - Google Patents
Kapazitiv gekoppelter rf plasmareaktor und verfahren zur herstellung von werkstückenInfo
- Publication number
- DE69834020D1 DE69834020D1 DE69834020T DE69834020T DE69834020D1 DE 69834020 D1 DE69834020 D1 DE 69834020D1 DE 69834020 T DE69834020 T DE 69834020T DE 69834020 T DE69834020 T DE 69834020T DE 69834020 D1 DE69834020 D1 DE 69834020D1
- Authority
- DE
- Germany
- Prior art keywords
- capacitively coupled
- plasma reactor
- producing workpieces
- workpieces
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US784578 | 1997-01-17 | ||
US08/784,578 US5981899A (en) | 1997-01-17 | 1997-01-17 | Capacitively coupled RF-plasma reactor |
PCT/IB1998/000043 WO1998032154A1 (en) | 1997-01-17 | 1998-01-13 | Capacitively coupled rf-plasma reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69834020D1 true DE69834020D1 (de) | 2006-05-18 |
DE69834020T2 DE69834020T2 (de) | 2006-09-14 |
Family
ID=25132884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69834020T Expired - Lifetime DE69834020T2 (de) | 1997-01-17 | 1998-01-13 | Kapazitiv gekoppelter rf plasmareaktor und verfahren zur herstellung von werkstücken |
Country Status (8)
Country | Link |
---|---|
US (2) | US5981899A (de) |
EP (1) | EP0953204B1 (de) |
JP (1) | JP4773591B2 (de) |
KR (1) | KR100523766B1 (de) |
DE (1) | DE69834020T2 (de) |
ES (1) | ES2262218T3 (de) |
TW (1) | TW423045B (de) |
WO (1) | WO1998032154A1 (de) |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6395128B2 (en) * | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
US6112697A (en) | 1998-02-19 | 2000-09-05 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods |
DE19814871A1 (de) * | 1998-04-02 | 1999-10-07 | Max Planck Gesellschaft | Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition |
JP3332857B2 (ja) * | 1998-04-15 | 2002-10-07 | 三菱重工業株式会社 | 高周波プラズマ発生装置及び給電方法 |
US6424091B1 (en) | 1998-10-26 | 2002-07-23 | Matsushita Electric Works, Ltd. | Plasma treatment apparatus and plasma treatment method performed by use of the same apparatus |
FR2799920B1 (fr) * | 1999-10-19 | 2002-01-11 | Metal Process | Procede de production d'un plasma par decharges distribuees de type capacitif, et dispositif pour la mise en oeuvre d'un tel procede |
FR2799921B1 (fr) * | 1999-10-19 | 2002-01-11 | Metal Process | Procede de production d'un plasma par decharges a barriere multipolaire de type capacitif, et dispositif pour la mise en oeuvre d'un tel procede |
WO2001073814A2 (en) * | 2000-03-28 | 2001-10-04 | Tokyo Electron Limited | Method and apparatus for controlling power delivered to a multiple segment electrode |
NL1015044C2 (nl) * | 2000-04-28 | 2001-10-30 | Stork Screens Bv | Werkwijze voor het aanbrengen van perforaties in een substraat alsmede inrichting voor het uitvoeren van de werkwijze. |
EP1305821B1 (de) * | 2000-08-02 | 2008-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mobiler halter für einen wafer |
US6562684B1 (en) | 2000-08-30 | 2003-05-13 | Micron Technology, Inc. | Methods of forming dielectric materials |
TW519716B (en) * | 2000-12-19 | 2003-02-01 | Tokyo Electron Ltd | Wafer bias drive for a plasma source |
US6726804B2 (en) | 2001-01-22 | 2004-04-27 | Liang-Guo Wang | RF power delivery for plasma processing using modulated power signal |
US6741446B2 (en) * | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
US6602381B1 (en) | 2001-04-30 | 2003-08-05 | Lam Research Corporation | Plasma confinement by use of preferred RF return path |
US6642661B2 (en) * | 2001-08-28 | 2003-11-04 | Tokyo Electron Limited | Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor |
US20040083976A1 (en) * | 2002-09-25 | 2004-05-06 | Silterra Malaysia Sdn. Bhd. | Modified deposition ring to eliminate backside and wafer edge coating |
US6872909B2 (en) * | 2003-04-16 | 2005-03-29 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel |
WO2005009090A1 (ja) * | 2003-07-23 | 2005-01-27 | Sekisui Chemical Co., Ltd. | プラズマ処理装置及びその電極構造 |
US20050233092A1 (en) * | 2004-04-20 | 2005-10-20 | Applied Materials, Inc. | Method of controlling the uniformity of PECVD-deposited thin films |
US7785672B2 (en) * | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US20060005771A1 (en) * | 2004-07-12 | 2006-01-12 | Applied Materials, Inc. | Apparatus and method of shaping profiles of large-area PECVD electrodes |
JP4899863B2 (ja) * | 2004-05-28 | 2012-03-21 | コニカミノルタホールディングス株式会社 | 薄膜形成装置及び薄膜形成方法 |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
WO2006050632A2 (en) * | 2004-11-12 | 2006-05-18 | Oc Oerlikon Balzers Ag | Impedance matching of a capacitively coupled rf plasma reactor suitable for large area substrates |
US7632375B2 (en) * | 2004-12-30 | 2009-12-15 | Lam Research Corporation | Electrically enhancing the confinement of plasma |
US7342361B2 (en) * | 2005-05-11 | 2008-03-11 | Dublin City University | Plasma source |
IES20050301A2 (en) * | 2005-05-11 | 2006-11-15 | Univ Dublin City | Plasma source |
CN101208457B (zh) * | 2005-06-29 | 2010-12-29 | 欧瑞康太阳Ip股份公司(特吕巴赫) | 制造平板基体的方法 |
US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
US7588668B2 (en) | 2005-09-13 | 2009-09-15 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US20070056843A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US7799237B2 (en) * | 2006-05-25 | 2010-09-21 | Sony Corporation | Method and apparatus for etching a structure in a plasma chamber |
US20080083701A1 (en) * | 2006-10-04 | 2008-04-10 | Mks Instruments, Inc. | Oxygen conditioning of plasma vessels |
DE602006013328D1 (de) * | 2006-11-10 | 2010-05-12 | Univ Dublin City | Plasmaquelle mit Vielzahl phasenversetzter Elektroden |
US20080132046A1 (en) * | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
US8262847B2 (en) * | 2006-12-29 | 2012-09-11 | Lam Research Corporation | Plasma-enhanced substrate processing method and apparatus |
US8222156B2 (en) | 2006-12-29 | 2012-07-17 | Lam Research Corporation | Method and apparatus for processing a substrate using plasma |
TW200834671A (en) * | 2007-02-12 | 2008-08-16 | Innolux Display Corp | Plasma enhanced chemical vapor deposition device |
JP5193641B2 (ja) * | 2007-03-26 | 2013-05-08 | 日本碍子株式会社 | プラズマ処理装置 |
US20080317973A1 (en) * | 2007-06-22 | 2008-12-25 | White John M | Diffuser support |
JP5331355B2 (ja) * | 2007-07-09 | 2013-10-30 | 日本碍子株式会社 | プラズマ処理装置 |
KR101046520B1 (ko) | 2007-09-07 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 내부 챔버 상의 부산물 막 증착을 제어하기 위한 pecvd 시스템에서의 소스 가스 흐름 경로 제어 |
CN101903971B (zh) * | 2007-12-20 | 2013-01-02 | 欧瑞康太阳能股份公司(特吕巴赫) | 用于制造大面积真空等离子体处理的基板的方法以及真空等离子体处理装置 |
US8097082B2 (en) * | 2008-04-28 | 2012-01-17 | Applied Materials, Inc. | Nonplanar faceplate for a plasma processing chamber |
WO2009133193A1 (en) * | 2008-05-02 | 2009-11-05 | Oerlikon Trading Ag, Truebbach | Plasma treatment apparatus and method for plasma-assisted treatment of substrates |
US9545735B2 (en) * | 2008-08-20 | 2017-01-17 | Corning Incorporated | Methods for drying ceramic greenware using an electrode concentrator |
US8438990B2 (en) * | 2008-09-30 | 2013-05-14 | Applied Materials, Inc. | Multi-electrode PECVD source |
US8501528B2 (en) | 2008-10-01 | 2013-08-06 | Tel Solar Ag | Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates |
CN101740298B (zh) * | 2008-11-07 | 2012-07-25 | 东京毅力科创株式会社 | 等离子体处理装置及其构成部件 |
GB2466836A (en) * | 2009-01-12 | 2010-07-14 | Phive Plasma Technologies Ltd | Plasma source tile electrode |
KR101626043B1 (ko) | 2009-03-05 | 2016-05-31 | 위순임 | 다중 주파수 구동형 용량 결합 플라즈마 반응기 |
JP5248370B2 (ja) * | 2009-03-10 | 2013-07-31 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
US20110005682A1 (en) | 2009-07-08 | 2011-01-13 | Stephen Edward Savas | Apparatus for Plasma Processing |
US20110120375A1 (en) * | 2009-11-23 | 2011-05-26 | Jusung Engineering Co., Ltd. | Apparatus for processing substrate |
WO2011070721A1 (ja) * | 2009-12-09 | 2011-06-16 | パナソニック株式会社 | 高周波加熱装置及び高周波加熱方法 |
KR101612741B1 (ko) * | 2010-03-08 | 2016-04-18 | 주성엔지니어링(주) | 가스분배수단 및 이를 포함한 기판처리장치 |
KR101693673B1 (ko) * | 2010-06-23 | 2017-01-09 | 주성엔지니어링(주) | 가스분배수단 및 이를 포함한 기판처리장치 |
KR101160625B1 (ko) | 2010-09-20 | 2012-06-28 | 주식회사 뉴파워 프라즈마 | 상하 다중 분할 전극을 위한 다중 전원 공급원을 갖는 플라즈마 반응기 |
KR101200726B1 (ko) | 2010-09-20 | 2012-11-13 | 주식회사 뉴파워 프라즈마 | 상하 다중 분할 전극이 구비된 플라즈마 반응기 |
US8765232B2 (en) | 2011-01-10 | 2014-07-01 | Plasmasi, Inc. | Apparatus and method for dielectric deposition |
US10553406B2 (en) * | 2011-03-30 | 2020-02-04 | Jusung Engineering Co., Ltd. | Plasma generating apparatus and substrate processing apparatus |
US9299956B2 (en) | 2012-06-13 | 2016-03-29 | Aixtron, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
US10526708B2 (en) | 2012-06-19 | 2020-01-07 | Aixtron Se | Methods for forming thin protective and optical layers on substrates |
US9530618B2 (en) | 2012-07-06 | 2016-12-27 | Infineon Technologies Ag | Plasma system, chuck and method of making a semiconductor device |
EP2854155B1 (de) * | 2013-09-27 | 2017-11-08 | INDEOtec SA | Plasmareaktorgefäß und Anordnung sowie Verfahren zur Durchführung einer Plasmaverarbeitung |
US9336997B2 (en) * | 2014-03-17 | 2016-05-10 | Applied Materials, Inc. | RF multi-feed structure to improve plasma uniformity |
JP6277055B2 (ja) * | 2014-04-25 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US10121641B2 (en) | 2014-07-21 | 2018-11-06 | Lam Research Corporation | Large dynamic range RF voltage sensor and method for voltage mode RF bias application of plasma processing systems |
US9741543B2 (en) | 2014-07-21 | 2017-08-22 | Lam Research Corporation | Multi-range voltage sensor and method for a voltage controlled interface of a plasma processing system |
JP6356516B2 (ja) * | 2014-07-22 | 2018-07-11 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP6542053B2 (ja) * | 2015-07-15 | 2019-07-10 | 株式会社東芝 | プラズマ電極構造、およびプラズマ誘起流発生装置 |
US9721759B1 (en) | 2016-04-04 | 2017-08-01 | Aixtron Se | System and method for distributing RF power to a plasma source |
JP6645921B2 (ja) | 2016-07-07 | 2020-02-14 | キオクシア株式会社 | プラズマ処理装置およびプラズマ処理方法 |
KR102227783B1 (ko) * | 2016-12-27 | 2021-03-16 | 에바텍 아크티엔게젤샤프트 | 진공 플라즈마 작업편 처리 장치 |
US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
CN110600355B (zh) * | 2018-06-13 | 2021-12-24 | 财团法人工业技术研究院 | 等离子体处理装置 |
KR20210094116A (ko) * | 2018-12-17 | 2021-07-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 광학 디바이스 제작을 위한 전자 빔 장치 |
US20200321186A1 (en) * | 2019-04-02 | 2020-10-08 | Applied Materials, Inc. | Method and apparatus for angled etching |
KR102695104B1 (ko) | 2019-08-16 | 2024-08-14 | 램 리써치 코포레이션 | 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 방법 및 장치 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192268A (en) * | 1981-05-19 | 1982-11-26 | Matsushita Electric Ind Co Ltd | Dry etching apparatus |
US4474659A (en) * | 1982-05-28 | 1984-10-02 | Fazal Fazlin | Plated-through-hole method |
JPH0666298B2 (ja) * | 1983-02-03 | 1994-08-24 | 日電アネルバ株式会社 | ドライエッチング装置 |
US5061359A (en) * | 1985-01-17 | 1991-10-29 | International Business Machines Corporation | Plasma processing apparatus including three bus structures |
US5201681A (en) * | 1987-02-06 | 1993-04-13 | Canon Kabushiki Kaisha | Method of emitting electrons |
JPH07122140B2 (ja) * | 1987-09-11 | 1995-12-25 | 日本合成ゴム株式会社 | 膜の形成方法 |
JPH04196319A (ja) * | 1990-11-28 | 1992-07-16 | Toshiba Corp | 放電処理装置 |
US5330606A (en) * | 1990-12-14 | 1994-07-19 | Matsushita Electric Industrial Co., Ltd. | Plasma source for etching |
JPH065522A (ja) * | 1992-06-17 | 1994-01-14 | Mitsubishi Heavy Ind Ltd | 高周波プラズマcvd装置 |
DE4239244A1 (de) * | 1992-11-21 | 1994-05-26 | Basf Ag | Retard-Form für pharmazeutische Wirkstoffe |
KR100276736B1 (ko) * | 1993-10-20 | 2001-03-02 | 히가시 데쓰로 | 플라즈마 처리장치 |
JP2659919B2 (ja) * | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プラズマの不均一性を補正するプラズマ装置 |
DE4404077C2 (de) * | 1994-02-09 | 1997-04-30 | Licentia Gmbh | Anordnung und Verfahren zum plasmagestützten Bearbeiten von Werkstücken |
JPH07226395A (ja) * | 1994-02-15 | 1995-08-22 | Matsushita Electric Ind Co Ltd | 真空プラズマ処理装置 |
JP3065879B2 (ja) * | 1994-03-30 | 2000-07-17 | 三洋電機株式会社 | プラズマcvd装置 |
JPH07321054A (ja) * | 1994-05-27 | 1995-12-08 | Mitsubishi Electric Corp | プラズマcvd装置とそのクリーニング方法 |
US5543688A (en) * | 1994-08-26 | 1996-08-06 | Applied Materials Inc. | Plasma generation apparatus with interleaved electrodes and corresponding method |
JPH0878187A (ja) * | 1994-09-06 | 1996-03-22 | Fujitsu Ltd | プラズマ処理装置 |
JP3162955B2 (ja) * | 1995-06-13 | 2001-05-08 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3931357B2 (ja) * | 1995-10-18 | 2007-06-13 | ソニー株式会社 | 半導体装置の製造方法 |
US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
-
1997
- 1997-01-17 US US08/784,578 patent/US5981899A/en not_active Expired - Fee Related
-
1998
- 1998-01-13 EP EP98900039A patent/EP0953204B1/de not_active Expired - Lifetime
- 1998-01-13 ES ES98900039T patent/ES2262218T3/es not_active Expired - Lifetime
- 1998-01-13 DE DE69834020T patent/DE69834020T2/de not_active Expired - Lifetime
- 1998-01-13 JP JP53403698A patent/JP4773591B2/ja not_active Expired - Fee Related
- 1998-01-13 WO PCT/IB1998/000043 patent/WO1998032154A1/en active IP Right Grant
- 1998-01-13 KR KR10-1999-7006493A patent/KR100523766B1/ko not_active IP Right Cessation
- 1998-02-02 TW TW087101169A patent/TW423045B/zh not_active IP Right Cessation
-
1999
- 1999-07-23 US US09/360,247 patent/US6281469B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4773591B2 (ja) | 2011-09-14 |
JP2001508923A (ja) | 2001-07-03 |
DE69834020T2 (de) | 2006-09-14 |
EP0953204B1 (de) | 2006-03-29 |
US5981899A (en) | 1999-11-09 |
KR20000070265A (ko) | 2000-11-25 |
TW423045B (en) | 2001-02-21 |
US6281469B1 (en) | 2001-08-28 |
EP0953204A1 (de) | 1999-11-03 |
ES2262218T3 (es) | 2006-11-16 |
WO1998032154A1 (en) | 1998-07-23 |
KR100523766B1 (ko) | 2005-10-25 |
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