DE69810686T2 - Verfahren zum Abrichten eines Polierkissens. - Google Patents

Verfahren zum Abrichten eines Polierkissens.

Info

Publication number
DE69810686T2
DE69810686T2 DE69810686T DE69810686T DE69810686T2 DE 69810686 T2 DE69810686 T2 DE 69810686T2 DE 69810686 T DE69810686 T DE 69810686T DE 69810686 T DE69810686 T DE 69810686T DE 69810686 T2 DE69810686 T2 DE 69810686T2
Authority
DE
Germany
Prior art keywords
dressing
polishing pad
polishing
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69810686T
Other languages
English (en)
Other versions
DE69810686D1 (de
Inventor
Naoto Miyashita
Yoshihiro Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69810686D1 publication Critical patent/DE69810686D1/de
Publication of DE69810686T2 publication Critical patent/DE69810686T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
DE69810686T 1997-04-10 1998-04-09 Verfahren zum Abrichten eines Polierkissens. Expired - Lifetime DE69810686T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10680497A JP3676030B2 (ja) 1997-04-10 1997-04-10 研磨パッドのドレッシング方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69810686D1 DE69810686D1 (de) 2003-02-20
DE69810686T2 true DE69810686T2 (de) 2003-09-18

Family

ID=14443056

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69810686T Expired - Lifetime DE69810686T2 (de) 1997-04-10 1998-04-09 Verfahren zum Abrichten eines Polierkissens.

Country Status (5)

Country Link
US (2) US6241581B1 (de)
EP (1) EP0870577B1 (de)
JP (1) JP3676030B2 (de)
KR (1) KR100264756B1 (de)
DE (1) DE69810686T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012000724B4 (de) 2011-03-07 2022-03-31 Ehwa Diamond Industrial Co., Ltd. Konditionierer für ein weiches Poliertuch und Herstellungsverfahren hierfür

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3001054B1 (ja) * 1998-06-29 2000-01-17 日本電気株式会社 研磨装置及び研磨パッドの表面調整方法
WO2000024548A1 (fr) 1998-10-28 2000-05-04 Hitachi, Ltd. Dispositif de polissage et procede de fabrication de semi-conducteurs au moyen dudit dispositif
US20030199238A1 (en) 2000-01-18 2003-10-23 Shigeo Moriyama Polishing apparatus and method for producing semiconductors using the apparatus
US6372648B1 (en) * 1998-11-16 2002-04-16 Texas Instruments Incorporated Integrated circuit planarization method
JP4501694B2 (ja) * 1998-12-25 2010-07-14 日立化成工業株式会社 Ｃｍｐ研磨剤用添加液
KR100475976B1 (ko) * 1998-12-25 2005-03-15 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
JP4604727B2 (ja) * 1998-12-25 2011-01-05 日立化成工業株式会社 Ｃｍｐ研磨剤用添加液
KR20010004982A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 산화막 연마용 슬러리 제조 방법
WO2001003886A1 (en) * 1999-07-09 2001-01-18 Speedfam-Ipec Corporation Method and apparatus for eliminating wear and grooving of workpiece carrier retaining element
JP3760064B2 (ja) 1999-08-09 2006-03-29 株式会社日立製作所 半導体装置の製造方法及び半導体装置の平坦化加工装置
JP2001077060A (ja) * 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
JP2001274122A (ja) * 2000-03-23 2001-10-05 Tokyo Seimitsu Co Ltd ウェハ研磨装置
US6752697B1 (en) * 2000-08-23 2004-06-22 Advanced Micro Devices, Inc. Apparatus and method for chemical mechanical polishing of a substrate
JP2002170792A (ja) * 2000-11-29 2002-06-14 Mitsubishi Electric Corp 研磨液供給装置及び研磨液供給方法、研磨装置及び研磨方法、並びに、半導体装置の製造方法
DE10162597C1 (de) * 2001-12-19 2003-03-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung beidseitig polierter Halbleiterscheiben
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
WO2004062851A1 (ja) * 2003-01-15 2004-07-29 Mitsubishi Materials Corporation 軟質材加工用切削工具
US20040192178A1 (en) * 2003-03-28 2004-09-30 Barak Yardeni Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads
JP2005217037A (ja) * 2004-01-28 2005-08-11 Asahi Sunac Corp 半導体ウェーハ用研磨パッドのコンディショニング方法
JP2005262406A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 研磨装置および半導体装置の製造方法
US7070484B2 (en) * 2004-05-21 2006-07-04 Mosel Vitelic, Inc. Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry
KR100678303B1 (ko) * 2004-05-25 2007-02-02 동부일렉트로닉스 주식회사 화학 기계적 연마(ｃｍｐ) 패드 드레서 및 화학 기계적연마(ｃｍｐ) 장치
US20060211237A1 (en) * 2005-03-21 2006-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for planarizing gap-filling material
JP5444596B2 (ja) * 2007-08-31 2014-03-19 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5149020B2 (ja) * 2008-01-23 2013-02-20 株式会社ディスコ ウエーハの研削方法
JP2011071303A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体装置の製造方法
CN102140030B (zh) * 2010-02-02 2013-01-23 中国科学院理化技术研究所 无需烧结制备高气孔率纳米晶碳化硅泡沫陶瓷的方法
JP5733623B2 (ja) * 2011-06-10 2015-06-10 国立大学法人九州大学 半導体装置の製造方法
US20140364041A1 (en) * 2011-12-16 2014-12-11 Lg Siltron Inc. Apparatus and method for polishing wafer
KR20160067107A (ko) * 2013-10-04 2016-06-13 가부시키가이샤 후지미인코퍼레이티드 연마 장치, 연마 부재의 가공 방법, 연마 부재의 수정 방법, 형상 가공용 절삭 공구 및 표면 수정용 공구

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152562A (en) * 1980-04-24 1981-11-26 Fujitsu Ltd Grinder
DE3884778T2 (de) * 1987-12-29 1994-05-11 Du Pont Feine Polierzusammensetzung für Plaketten.
JPH07237120A (ja) * 1994-02-22 1995-09-12 Nec Corp ウェーハ研磨装置
JP2914166B2 (ja) * 1994-03-16 1999-06-28 日本電気株式会社 研磨布の表面処理方法および研磨装置
JP3278532B2 (ja) * 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
JP2647050B2 (ja) * 1995-03-31 1997-08-27 日本電気株式会社 ウェハ研磨装置
JP3778594B2 (ja) * 1995-07-18 2006-05-24 株式会社荏原製作所 ドレッシング方法
JP3111892B2 (ja) * 1996-03-19 2000-11-27 ヤマハ株式会社 研磨装置
US5890951A (en) * 1996-04-15 1999-04-06 Lsi Logic Corporation Utility wafer for chemical-mechanical planarization
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
JP3679882B2 (ja) * 1997-02-07 2005-08-03 株式会社荏原製作所 研磨用クロスのドレッサー及びその製造方法
JPH10329007A (ja) * 1997-05-28 1998-12-15 Sony Corp 化学的機械研磨装置
JPH11188626A (ja) * 1997-12-26 1999-07-13 Narumi China Corp セラミックスドレス基板
US5941762A (en) * 1998-01-07 1999-08-24 Ravkin; Michael A. Method and apparatus for improved conditioning of polishing pads
US6123607A (en) * 1998-01-07 2000-09-26 Ravkin; Michael A. Method and apparatus for improved conditioning of polishing pads

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012000724B4 (de) 2011-03-07 2022-03-31 Ehwa Diamond Industrial Co., Ltd. Konditionierer für ein weiches Poliertuch und Herstellungsverfahren hierfür

Also Published As

Publication number Publication date
KR19980081281A (ko) 1998-11-25
US20010029156A1 (en) 2001-10-11
DE69810686D1 (de) 2003-02-20
JP3676030B2 (ja) 2005-07-27
EP0870577B1 (de) 2003-01-15
US6241581B1 (en) 2001-06-05
KR100264756B1 (ko) 2000-09-01
EP0870577A2 (de) 1998-10-14
US6716087B2 (en) 2004-04-06
JPH10286756A (ja) 1998-10-27
EP0870577A3 (de) 1998-11-18

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