DE69802233D1 - Sputtertargets und Dünnschichten aus hochreiner Kupfer - Google Patents

Sputtertargets und Dünnschichten aus hochreiner Kupfer

Info

Publication number
DE69802233D1
DE69802233D1 DE69802233T DE69802233T DE69802233D1 DE 69802233 D1 DE69802233 D1 DE 69802233D1 DE 69802233 T DE69802233 T DE 69802233T DE 69802233 T DE69802233 T DE 69802233T DE 69802233 D1 DE69802233 D1 DE 69802233D1
Authority
DE
Germany
Prior art keywords
thin layers
layers made
sputtering targets
purity copper
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69802233T
Other languages
English (en)
Other versions
DE69802233T2 (de
Inventor
Kazushige Takahashi
Osamu Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Publication of DE69802233D1 publication Critical patent/DE69802233D1/de
Application granted granted Critical
Publication of DE69802233T2 publication Critical patent/DE69802233T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
DE69802233T 1997-06-02 1998-05-20 Sputtertargets und Dünnschichten aus hochreiner Kupfer Expired - Lifetime DE69802233T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15733197A JP3403918B2 (ja) 1997-06-02 1997-06-02 高純度銅スパッタリングタ−ゲットおよび薄膜

Publications (2)

Publication Number Publication Date
DE69802233D1 true DE69802233D1 (de) 2001-12-06
DE69802233T2 DE69802233T2 (de) 2002-06-27

Family

ID=15647365

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802233T Expired - Lifetime DE69802233T2 (de) 1997-06-02 1998-05-20 Sputtertargets und Dünnschichten aus hochreiner Kupfer

Country Status (6)

Country Link
US (1) US6451135B1 (de)
EP (1) EP0882813B1 (de)
JP (1) JP3403918B2 (de)
KR (1) KR100338796B1 (de)
DE (1) DE69802233T2 (de)
TW (1) TW438900B (de)

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US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
US6001227A (en) 1997-11-26 1999-12-14 Applied Materials, Inc. Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
JP2000034562A (ja) * 1998-07-14 2000-02-02 Japan Energy Corp スパッタリングターゲット及び薄膜形成装置部品
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
JP2003529206A (ja) 1999-11-24 2003-09-30 ハネウェル・インターナショナル・インコーポレーテッド 物理蒸着ターゲット、導電性集積回路金属合金相互接続配線、電気めっきアノード、集積回路における導電性相互接続配線として用いるための金属合金
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
JP4533498B2 (ja) * 2000-03-24 2010-09-01 アルバックマテリアル株式会社 スパッタリングターゲットないし蒸着材料とその分析方法
US6491806B1 (en) * 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
JP4686008B2 (ja) * 2000-05-31 2011-05-18 株式会社東芝 スパッタリングターゲットとそれを用いたＣｕ膜および電子デバイス
JP4642255B2 (ja) * 2000-09-04 2011-03-02 Ｊｘ日鉱日石金属株式会社 酸化変色防止剤を施した銅又は銅合金製スパッタリングターゲットおよびその処理法
US7041204B1 (en) 2000-10-27 2006-05-09 Honeywell International Inc. Physical vapor deposition components and methods of formation
US6627055B2 (en) * 2001-07-02 2003-09-30 Brush Wellman, Inc. Manufacture of fine-grained electroplating anodes
KR100853743B1 (ko) * 2001-07-19 2008-08-25 허니웰 인터내셔널 인코포레이티드 스퍼터링 타겟, 스퍼터 리액터, 주조잉곳을 제조하는 방법및 금속제품을 제조하는 방법
JP4026356B2 (ja) * 2001-11-07 2007-12-26 松下電器産業株式会社 負極集電体およびこの集電体を用いた負極板と非水電解液二次電池
JP4011336B2 (ja) * 2001-12-07 2007-11-21 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
JP4118814B2 (ja) * 2002-01-30 2008-07-16 日鉱金属株式会社 銅合金スパッタリングターゲット及び同ターゲットを製造する方法
WO2004001093A1 (ja) * 2002-06-24 2003-12-31 Kobelco Research Institute, Inc. 銀合金スパッタリングターゲットとその製造方法
JP4794802B2 (ja) * 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
WO2004083482A1 (ja) * 2003-03-17 2004-09-30 Nikko Materials Co., Ltd. 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線
DE10392142B4 (de) * 2003-06-23 2007-08-02 Kobelco Research Institute, Inc., Kobe Sputtertarget aus einer Silberlegierung und Verfahren zur Herstellung desselben
JP4384453B2 (ja) 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法
KR20060037247A (ko) * 2003-08-21 2006-05-03 허니웰 인터내셔널 인코포레이티드 Ｃｕ-함유 ＰＤⅤ 타겟과 그 제조방법
US8192596B2 (en) * 2004-01-29 2012-06-05 Jx Nippon Mining & Metals Corporation Ultrahigh-purity copper and process for producing the same
EP2845915A1 (de) * 2005-06-15 2015-03-11 JX Nippon Mining & Metals Corporation Ultrahochreines kupfer bonddraht
JP4955008B2 (ja) 2006-10-03 2012-06-20 Ｊｘ日鉱日石金属株式会社 Ｃｕ−Ｍｎ合金スパッタリングターゲット及び半導体配線
WO2008134516A2 (en) * 2007-04-27 2008-11-06 Honeywell International Inc. Novel manufacturing design and processing methods and apparatus for sputtering targets
KR101101733B1 (ko) * 2007-06-05 2012-01-05 가부시키가이샤 알박 박막 트랜지스터 제조 방법, 액정 표시 장치 제조 방법, 전극 형성 방법
US20090028744A1 (en) * 2007-07-23 2009-01-29 Heraeus, Inc. Ultra-high purity NiPt alloys and sputtering targets comprising same
JP5092939B2 (ja) * 2008-07-01 2012-12-05 日立電線株式会社 Ｔｆｔ用平板型銅スパッタリングターゲット材及びスパッタリング方法
JP4680325B2 (ja) * 2008-09-30 2011-05-11 Ｊｘ日鉱日石金属株式会社 高純度銅又は高純度銅合金スパッタリングターゲット、同スパッタリングターゲットの製造方法及び高純度銅又は高純度銅合金スパッタ膜
WO2010038641A1 (ja) 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅及び電解による高純度銅の製造方法
JP5118618B2 (ja) * 2008-12-24 2013-01-16 Ｊｘ日鉱日石金属株式会社 高純度形状記憶合金ターゲット及び同合金薄膜
JP5491845B2 (ja) * 2009-12-16 2014-05-14 株式会社Ｓｈカッパープロダクツ スパッタリングターゲット材
WO2011078188A1 (ja) 2009-12-22 2011-06-30 三菱伸銅株式会社 純銅板の製造方法及び純銅板
JP4869415B2 (ja) 2010-02-09 2012-02-08 三菱伸銅株式会社 純銅板の製造方法及び純銅板
JP5376168B2 (ja) * 2010-03-30 2013-12-25 三菱マテリアル株式会社 電気銅めっき用高純度銅アノード、その製造方法および電気銅めっき方法
JP5439349B2 (ja) * 2010-12-14 2014-03-12 株式会社東芝 Ｃｕ膜の製造方法
US9597754B2 (en) 2011-03-07 2017-03-21 Jx Nippon Mining & Metals Corporation Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire
JP5616265B2 (ja) * 2011-03-25 2014-10-29 Hoya株式会社 薄膜の成膜方法、マスクブランクの製造方法及び転写用マスクの製造方法
JP5747091B2 (ja) * 2012-01-12 2015-07-08 Jx日鉱日石金属株式会社 高純度銅スパッタリングターゲット
JP5567042B2 (ja) * 2012-02-10 2014-08-06 株式会社Ｓｈカッパープロダクツ Ｔｆｔ用銅スパッタリングターゲット材
JP5950632B2 (ja) * 2012-03-09 2016-07-13 古河電気工業株式会社 スパッタリングターゲットの製造方法
CN104080943B (zh) * 2012-03-09 2016-02-17 古河电气工业株式会社 溅镀靶
JP6182296B2 (ja) * 2012-03-09 2017-08-16 古河電気工業株式会社 スパッタリングターゲット、及び、その製造方法
JP5752736B2 (ja) 2013-04-08 2015-07-22 三菱マテリアル株式会社 スパッタリング用ターゲット
JP6274026B2 (ja) 2013-07-31 2018-02-07 三菱マテリアル株式会社 銅合金スパッタリングターゲット及び銅合金スパッタリングターゲットの製造方法
CN104746020B (zh) * 2013-12-27 2017-07-04 有研亿金新材料股份有限公司 一种铜合金靶材的加工方法
JP5590259B1 (ja) 2014-01-28 2014-09-17 千住金属工業株式会社 Ｃｕ核ボール、はんだペーストおよびはんだ継手
WO2015151901A1 (ja) * 2014-03-31 2015-10-08 Jx日鉱日石金属株式会社 銅又は銅合金スパッタリングターゲット
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US10494712B2 (en) 2015-05-21 2019-12-03 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target and method for manufacturing same
JP6339625B2 (ja) * 2016-05-25 2018-06-06 古河電気工業株式会社 スパッタリングターゲット
JP7121883B2 (ja) * 2018-04-09 2022-08-19 三菱マテリアル株式会社 スパッタリングターゲット材
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Also Published As

Publication number Publication date
KR100338796B1 (ko) 2002-09-18
KR19990006536A (ko) 1999-01-25
DE69802233T2 (de) 2002-06-27
EP0882813B1 (de) 2001-10-31
TW438900B (en) 2001-06-07
EP0882813A1 (de) 1998-12-09
JP3403918B2 (ja) 2003-05-06
US6451135B1 (en) 2002-09-17
JPH10330923A (ja) 1998-12-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NIKKO MATERIALS CO., LTD., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: NIPPON MINING & METALS CO., LTD., TOKIO/TOKYO, JP