DE69739522D1 - SiC-HALBLEITERANORDNUNG MIT EINEM PN-UEBERGANG DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHAELT - Google Patents

SiC-HALBLEITERANORDNUNG MIT EINEM PN-UEBERGANG DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHAELT

Info

Publication number
DE69739522D1
DE69739522D1 DE69739522T DE69739522T DE69739522D1 DE 69739522 D1 DE69739522 D1 DE 69739522D1 DE 69739522 T DE69739522 T DE 69739522T DE 69739522 T DE69739522 T DE 69739522T DE 69739522 D1 DE69739522 D1 DE 69739522D1
Authority
DE
Germany
Prior art keywords
absorption
transition
voltage
edge
sic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739522T
Other languages
English (en)
Inventor
Mietek Bakowski
Ulf Gustafsson
Kurt Rottner
Susan Savage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE69739522D1 publication Critical patent/DE69739522D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
DE69739522T 1996-07-16 1997-06-27 SiC-HALBLEITERANORDNUNG MIT EINEM PN-UEBERGANG DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHAELT Expired - Lifetime DE69739522D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/683,059 US6002159A (en) 1996-07-16 1996-07-16 SiC semiconductor device comprising a pn junction with a voltage absorbing edge
PCT/SE1997/001157 WO1998002924A2 (en) 1996-07-16 1997-06-27 SiC SEMICONDUCTOR DEVICE COMPRISING A pn JUNCTION WITH A VOLTAGE ABSORBING EDGE

Publications (1)

Publication Number Publication Date
DE69739522D1 true DE69739522D1 (de) 2009-09-17

Family

ID=24742400

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739522T Expired - Lifetime DE69739522D1 (de) 1996-07-16 1997-06-27 SiC-HALBLEITERANORDNUNG MIT EINEM PN-UEBERGANG DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHAELT

Country Status (5)

Country Link
US (2) US6002159A (de)
EP (1) EP0912999B1 (de)
JP (3) JP2000516767A (de)
DE (1) DE69739522D1 (de)
WO (1) WO1998002924A2 (de)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6096663A (en) * 1998-07-20 2000-08-01 Philips Electronics North America Corporation Method of forming a laterally-varying charge profile in silicon carbide substrate
US6246076B1 (en) 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US6972436B2 (en) 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
US6642558B1 (en) * 2000-03-20 2003-11-04 Koninklijke Philips Electronics N.V. Method and apparatus of terminating a high voltage solid state device
US7067176B2 (en) 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
SE0004377D0 (sv) * 2000-11-29 2000-11-29 Abb Research Ltd A semiconductor device and a method for production thereof
US6528373B2 (en) 2001-02-12 2003-03-04 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US7022378B2 (en) 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
US20050259368A1 (en) * 2003-11-12 2005-11-24 Ted Letavic Method and apparatus of terminating a high voltage solid state device
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US7118970B2 (en) 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
JP4186919B2 (ja) * 2004-12-07 2008-11-26 三菱電機株式会社 半導体装置
US7834376B2 (en) * 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
JP5034225B2 (ja) * 2005-09-05 2012-09-26 富士通セミコンダクター株式会社 半導体装置の製造方法
DE112006002377B4 (de) * 2005-09-08 2014-04-24 Mitsubishi Denki K.K. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
US7727904B2 (en) 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
CN101506989B (zh) * 2006-07-31 2014-02-19 威世-硅尼克斯 用于SiC肖特基二极管的钼势垒金属及制造工艺
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
KR101529331B1 (ko) 2006-08-17 2015-06-16 크리 인코포레이티드 고전력 절연 게이트 바이폴라 트랜지스터
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9640609B2 (en) 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
JP2008252143A (ja) * 2008-07-17 2008-10-16 Mitsubishi Electric Corp 半導体装置
US8097919B2 (en) 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US7759186B2 (en) * 2008-09-03 2010-07-20 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US8288220B2 (en) 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
JP5452062B2 (ja) * 2009-04-08 2014-03-26 三菱電機株式会社 炭化珪素半導体装置の製造方法
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8637386B2 (en) * 2009-05-12 2014-01-28 Cree, Inc. Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
JP5223773B2 (ja) 2009-05-14 2013-06-26 三菱電機株式会社 炭化珪素半導体装置の製造方法
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
JP5601849B2 (ja) * 2010-02-09 2014-10-08 三菱電機株式会社 炭化珪素半導体装置の製造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
JP5072991B2 (ja) * 2010-03-10 2012-11-14 株式会社東芝 半導体装置
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8716717B2 (en) 2010-10-15 2014-05-06 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same
US8803277B2 (en) 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
JP6050563B2 (ja) * 2011-02-25 2016-12-21 富士通株式会社 化合物半導体装置及びその製造方法
JP5558393B2 (ja) * 2011-03-10 2014-07-23 株式会社東芝 半導体装置
JP2012195519A (ja) * 2011-03-18 2012-10-11 Kyoto Univ 半導体素子及び半導体素子の製造方法
US8866158B2 (en) 2011-04-04 2014-10-21 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing same
US9318623B2 (en) * 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
CN103918079B (zh) 2011-09-11 2017-10-31 科锐 包括具有改进布局的晶体管的高电流密度功率模块
JP5982109B2 (ja) * 2011-10-21 2016-08-31 昭和電工株式会社 炭化珪素半導体装置
CN102437201B (zh) * 2011-11-25 2014-08-13 中国科学院微电子研究所 SiC结势垒肖特基二极管及其制作方法
CN104221151B (zh) 2012-03-16 2017-02-22 三菱电机株式会社 半导体装置及其制造方法
JP5939624B2 (ja) 2012-03-30 2016-06-22 国立研究開発法人産業技術総合研究所 縦型高耐圧半導体装置の製造方法および縦型高耐圧半導体装置
JP5818099B2 (ja) 2012-04-27 2015-11-18 国立研究開発法人産業技術総合研究所 半導体装置
EP2850660A1 (de) * 2012-05-17 2015-03-25 General Electric Company Halbleiterbauelement mit verbindungsabschlusserweiterung
JP6206862B2 (ja) 2012-05-31 2017-10-04 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6384944B2 (ja) 2012-05-31 2018-09-05 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2014038937A (ja) * 2012-08-16 2014-02-27 Mitsubishi Electric Corp 半導体装置
JP5800095B2 (ja) * 2012-09-21 2015-10-28 三菱電機株式会社 半導体装置
WO2014054319A1 (ja) * 2012-10-02 2014-04-10 三菱電機株式会社 半導体装置およびその製造方法
US9508792B2 (en) 2012-10-11 2016-11-29 Mitsubishi Electric Corporation Semiconductor device including an electric field buffer layer and method for manufacturing same
JP6090988B2 (ja) 2013-03-05 2017-03-08 株式会社 日立パワーデバイス 半導体装置
WO2014155565A1 (ja) * 2013-03-27 2014-10-02 トヨタ自動車株式会社 縦型半導体装置
WO2014184839A1 (ja) * 2013-05-13 2014-11-20 株式会社日立製作所 炭化珪素半導体装置
EP2997596B1 (de) 2013-05-14 2021-03-17 Cree, Inc. Hochleistungsfähiges leistungsmodul
US10347489B2 (en) 2013-07-02 2019-07-09 General Electric Company Semiconductor devices and methods of manufacture
US9064738B2 (en) * 2013-07-19 2015-06-23 Cree, Inc. Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices
JP6236456B2 (ja) * 2013-09-09 2017-11-22 株式会社日立製作所 半導体装置およびその製造方法
EP2875872B1 (de) * 2013-11-25 2018-03-28 AKK GmbH Schablone für ätztechnische Oberflächenstrukturierungen
DE112014006296T5 (de) 2014-01-29 2017-03-16 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung
US9515136B2 (en) 2014-06-18 2016-12-06 Stmicroelectronics S.R.L. Edge termination structure for a power integrated device and corresponding manufacturing process
JP6200864B2 (ja) * 2014-07-24 2017-09-20 株式会社日立製作所 高耐圧半導体装置
US9461108B2 (en) 2014-08-13 2016-10-04 Fairchild Semiconductor Corporation SiC power device having a high voltage termination
US20160126308A1 (en) * 2014-10-31 2016-05-05 Global Power Technologies Group, Inc. Super-junction edge termination for power devices
JP2018156987A (ja) 2017-03-15 2018-10-04 住友電気工業株式会社 半導体装置
JP6407354B2 (ja) * 2017-05-22 2018-10-17 三菱電機株式会社 電力用半導体装置
CN108447896B (zh) * 2018-04-08 2021-02-05 深圳市太赫兹科技创新研究院 碳化硅功率器件终端结构的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553826B2 (de) * 1972-12-18 1980-01-26
DE3219888A1 (de) * 1982-05-27 1983-12-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Planares halbleiterbauelement und verfahren zur herstellung
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
NL8401983A (nl) * 1984-06-22 1986-01-16 Philips Nv Halfgeleiderinrichting met verhoogde doorslagspanning.
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
EP0176778B1 (de) 1984-09-28 1991-01-16 Siemens Aktiengesellschaft Verfahren zum Herstellen eines pn-Übergangs mit hoher Durchbruchsspannung
US4648174A (en) * 1985-02-05 1987-03-10 General Electric Company Method of making high breakdown voltage semiconductor device
FR2581252B1 (fr) * 1985-04-26 1988-06-10 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
JPH05326552A (ja) * 1992-03-19 1993-12-10 Oki Electric Ind Co Ltd 半導体素子およびその製造方法
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
JP3192809B2 (ja) * 1993-03-12 2001-07-30 株式会社東芝 高耐圧炭化珪素ショットキ−・ダイオ−ド
WO1995032524A1 (en) * 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
TW286435B (de) * 1994-07-27 1996-09-21 Siemens Ag
US5967795A (en) * 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge

Also Published As

Publication number Publication date
EP0912999B1 (de) 2009-08-05
JP5527958B2 (ja) 2014-06-25
WO1998002924A3 (en) 1998-03-05
WO1998002924A2 (en) 1998-01-22
US6002159A (en) 1999-12-14
JP2000516767A (ja) 2000-12-12
JP2009044177A (ja) 2009-02-26
US6040237A (en) 2000-03-21
EP0912999A2 (de) 1999-05-06
JP2013062545A (ja) 2013-04-04

Similar Documents

Publication Publication Date Title
DE69739522D1 (de) SiC-HALBLEITERANORDNUNG MIT EINEM PN-UEBERGANG DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHAELT
DE69631664D1 (de) SiC-HALBLEITERANORDNUNG MIT EINEM PN-ÜBERGANG, DER EINEN RAND ZUR ABSORPTION DER SPANNUNG ENTHÄLT
DE69841272D1 (de) SiC HALBLEITERBAUELEMENT MIT EINEM PN-ÜBERGANG
DE59504577D1 (de) Halbleiterbauelement mit hochsperrendem randabschluss
DE59711671D1 (de) Lichtabstrahlendes halbleiterbauelement mit lumineszenzkonversionselement
DE69827698D1 (de) Herzschrittmacher mit einem Ischämie-Detektor
DE69812097T2 (de) Zahnbürste mit rippen
DE68911376D1 (de) MOSFET mit Drainspannungsdetektorfunktion.
DE69737621D1 (de) Halbleiterelement mit einer Höckerelektrode
DE69521396D1 (de) Sulfo-Polyurethan oder Sulfo-Polyharnstoff-Zusammensetzungen mit niedriger Oberflächenenergie
DE69422463D1 (de) Halbleiteranordnung mit einem Halbleiterchip mit Rückseitenelektrode
DE58908152D1 (de) Halbleiterbauelement mit Passivierungsschicht.
DE69919657D1 (de) Mit einem Band verbundene Befestigungmittel
DE69427904T2 (de) Integrierte Halbleiterdiode
DE69609047T2 (de) Wärmehärtbarer Klebstoff mit verbessertem Beschichtbarkeit
DE69617651D1 (de) Halbleiteranordnung mit einem Element hoher Zusammenbruchsspannung
DE69624305D1 (de) Halbleiteranordnung mit einem ligbt element
DE29706787U1 (de) Kochfeld mit kennzeichnender Beleuchtung der Kochstelle
DK0910875T3 (da) Keramisk filter med en afskærmning i samme plan
DE69529490D1 (de) Halbleiteranordnung mit Mesastruktur
DE69407126T2 (de) Mit Glimmer verstärkte Propylen-Harzzusammensetzung
DE69841667D1 (de) Halbleiteranordnungen mit MOS-Gatter
DE69422252D1 (de) Halbleiteranordnung mit einem Halbleiterelement ausgestaltet in einer Mesastruktur
DE9413550U1 (de) Halbleiteranordnung mit wenigstens einem Halbleiterbauelement
DE29617101U1 (de) Scheibenleuchte mit Abdeckstreifen über den Lampen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition