DE69735980D1 - Halbleiteranordnung in Halbleiter-Schaltungsstruktur - Google Patents

Halbleiteranordnung in Halbleiter-Schaltungsstruktur

Info

Publication number
DE69735980D1
DE69735980D1 DE69735980T DE69735980T DE69735980D1 DE 69735980 D1 DE69735980 D1 DE 69735980D1 DE 69735980 T DE69735980 T DE 69735980T DE 69735980 T DE69735980 T DE 69735980T DE 69735980 D1 DE69735980 D1 DE 69735980D1
Authority
DE
Germany
Prior art keywords
semiconductor
circuit structure
semiconductor device
semiconductor circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69735980T
Other languages
English (en)
Inventor
Hiroshi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69735980D1 publication Critical patent/DE69735980D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69735980T 1996-07-24 1997-07-22 Halbleiteranordnung in Halbleiter-Schaltungsstruktur Expired - Lifetime DE69735980D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8194876A JP2910681B2 (ja) 1996-07-24 1996-07-24 半導体装置

Publications (1)

Publication Number Publication Date
DE69735980D1 true DE69735980D1 (de) 2006-07-06

Family

ID=16331790

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69735980T Expired - Lifetime DE69735980D1 (de) 1996-07-24 1997-07-22 Halbleiteranordnung in Halbleiter-Schaltungsstruktur

Country Status (5)

Country Link
US (1) US5945700A (de)
EP (1) EP0821425B1 (de)
JP (1) JP2910681B2 (de)
KR (1) KR100236298B1 (de)
DE (1) DE69735980D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3099880B2 (ja) * 1998-08-12 2000-10-16 日本電気株式会社 半導体スイッチ及びスイッチ回路
DE29822007U1 (de) * 1998-12-10 1999-04-08 Bischoff Robert Elektrodenanordnung für ein elektrisches Bauelement und als Träger für Sensoren
US6208210B1 (en) * 1999-04-07 2001-03-27 Ericsson Inc. Advanced hybrid power amplifier design
JP4754129B2 (ja) * 2001-09-26 2011-08-24 三菱電機株式会社 半導体装置
JP3835404B2 (ja) 2002-06-24 2006-10-18 株式会社村田製作所 高周波スイッチおよびそれを用いた電子装置
JP4547992B2 (ja) 2003-07-24 2010-09-22 株式会社村田製作所 高周波スイッチおよびそれを用いた電子装置
US7230319B2 (en) * 2005-04-04 2007-06-12 Tdk Corporation Electronic substrate
JP2007037018A (ja) 2005-07-29 2007-02-08 Nec Electronics Corp スイッチ回路
JP4464368B2 (ja) 2006-05-23 2010-05-19 Ｎｅｃエレクトロニクス株式会社 スイッチ回路
US7969001B2 (en) * 2008-06-19 2011-06-28 Broadcom Corporation Method and system for intra-chip waveguide communication
US10312901B2 (en) * 2017-10-17 2019-06-04 Macom Technology Solutions Holdings, Inc. Traveling-wave switch with multiple source nodes

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565469A (en) * 1978-11-13 1980-05-16 Toshiba Corp Mos integrated circuit
US4456888A (en) * 1981-03-26 1984-06-26 Raytheon Company Radio frequency network having plural electrically interconnected field effect transistor cells
JPS6197861A (ja) * 1984-10-18 1986-05-16 Matsushita Electronics Corp 固体撮像装置の製造方法
US4733195A (en) * 1986-07-15 1988-03-22 Texas Instruments Incorporated Travelling-wave microwave device
EP0373803A3 (de) * 1988-12-16 1991-07-10 Raytheon Company R.F.-Wechselschalter
US4973918A (en) * 1988-12-27 1990-11-27 Raytheon Company Distributed amplifying switch/r.f. signal splitter
JPH02246373A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置
JP2841724B2 (ja) * 1990-05-29 1998-12-24 富士通株式会社 半導体装置
US5177381A (en) * 1991-12-06 1993-01-05 Motorola, Inc. Distributed logarithmic amplifier and method
JPH05206818A (ja) * 1992-01-28 1993-08-13 Mitsubishi Electric Corp 半導体スイッチ
JPH05243872A (ja) * 1992-03-02 1993-09-21 Hitachi Ltd 定在波効果による高周波高出力半導体素子
US5463326A (en) * 1993-04-13 1995-10-31 Hewlett-Packard Company Output drivers in high frequency circuits
JPH0758620A (ja) * 1993-08-09 1995-03-03 Kawasaki Steel Corp 半導体装置
JPH07153848A (ja) * 1993-09-17 1995-06-16 Fujitsu Ltd Ｃｍｏｓ集積回路装置及びその製造方法
JP3515811B2 (ja) * 1994-08-30 2004-04-05 三菱電機株式会社 インピーダンス整合回路
US5546049A (en) * 1995-03-31 1996-08-13 Hughes Aircraft Company Frequency scalable pre-matched transistor
US5689210A (en) * 1995-09-20 1997-11-18 Lange; Julius Active distributed signal sampler

Also Published As

Publication number Publication date
US5945700A (en) 1999-08-31
JPH1041404A (ja) 1998-02-13
EP0821425A2 (de) 1998-01-28
KR980012403A (ko) 1998-04-30
KR100236298B1 (ko) 1999-12-15
EP0821425A3 (de) 2000-07-05
JP2910681B2 (ja) 1999-06-23
EP0821425B1 (de) 2006-05-31

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Legal Events

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