DE69730388D1 - Metall-Keramik-Substrate von hoher Zuverlässigkeit für Halbleiter - Google Patents

Metall-Keramik-Substrate von hoher Zuverlässigkeit für Halbleiter

Info

Publication number
DE69730388D1
DE69730388D1 DE69730388T DE69730388T DE69730388D1 DE 69730388 D1 DE69730388 D1 DE 69730388D1 DE 69730388 T DE69730388 T DE 69730388T DE 69730388 T DE69730388 T DE 69730388T DE 69730388 D1 DE69730388 D1 DE 69730388D1
Authority
DE
Germany
Prior art keywords
semiconductors
metal
high reliability
ceramic substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69730388T
Other languages
English (en)
Other versions
DE69730388T2 (de
Inventor
Masami Sakuraba
Masami Kimura
Junji Nakamura
Masaya Takahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Original Assignee
Dowa Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Mining Co Ltd filed Critical Dowa Mining Co Ltd
Publication of DE69730388D1 publication Critical patent/DE69730388D1/de
Application granted granted Critical
Publication of DE69730388T2 publication Critical patent/DE69730388T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127—The active component for bonding being a refractory metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09145—Edge details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/098—Special shape of the cross-section of conductors, e.g. very thick plated conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09845—Stepped hole, via, edge, bump or conductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Ceramic Products (AREA)
DE69730388T 1996-08-27 1997-08-27 Metall-Keramik-Substrate von hoher Zuverlässigkeit für Halbleiter Expired - Lifetime DE69730388T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP24407696 1996-08-27
JP24407696 1996-08-27
JP08438997A JP3512977B2 (ja) 1996-08-27 1997-03-18 高信頼性半導体用基板
JP8438997 1997-03-18

Publications (2)

Publication Number Publication Date
DE69730388D1 true DE69730388D1 (de) 2004-09-30
DE69730388T2 DE69730388T2 (de) 2005-09-01

Family

ID=26425436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69730388T Expired - Lifetime DE69730388T2 (de) 1996-08-27 1997-08-27 Metall-Keramik-Substrate von hoher Zuverlässigkeit für Halbleiter

Country Status (4)

Country Link
US (1) US6054762A (de)
EP (2) EP0827198B1 (de)
JP (1) JP3512977B2 (de)
DE (1) DE69730388T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0935286A4 (de) * 1997-05-26 2008-04-09 Sumitomo Electric Industries Kupfer-schaltungsverbindungssubstrat und seine herstellung
US6222261B1 (en) * 1999-05-03 2001-04-24 The United States Of America As Represented By The Secretary Of The Army Barrier layers for thin film electronic materials
DE19927046B4 (de) * 1999-06-14 2007-01-25 Electrovac Ag Keramik-Metall-Substrat als Mehrfachsubstrat
EP1818980A3 (de) * 1999-06-22 2010-08-11 Infineon Technologies AG Substrat für Hochspannungsmodule
JP4158288B2 (ja) * 1999-08-31 2008-10-01 三菱電機株式会社 半導体モジュール
JP2001156413A (ja) * 1999-11-26 2001-06-08 Sumitomo Electric Ind Ltd 銅回路接合基板及びその製造方法
WO2002013267A1 (fr) * 2000-08-09 2002-02-14 Mitsubishi Materials Corporation Module de puissance pouvant comporter un dissipateur thermique
JP4756200B2 (ja) 2000-09-04 2011-08-24 Ｄｏｗａメタルテック株式会社 金属セラミックス回路基板
DE10158185B4 (de) * 2000-12-20 2005-08-11 Semikron Elektronik Gmbh Leistungshalbleitermodul mit hoher Isolationsfestigkeit
JP4811756B2 (ja) * 2001-09-28 2011-11-09 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合回路基板の製造方法
US6936337B2 (en) 2001-09-28 2005-08-30 Dowa Mining Co., Ltd. Metal/ceramic circuit board
JP4168114B2 (ja) * 2001-09-28 2008-10-22 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合体
JP3648189B2 (ja) * 2001-09-28 2005-05-18 同和鉱業株式会社 金属−セラミックス回路基板
US8584924B2 (en) * 2002-03-13 2013-11-19 Curamik Electronics Gmbh Method for the production of a metal-ceramic substrate, preferably a copper ceramic substrate
DE10212495B4 (de) 2002-03-21 2004-02-26 Schulz-Harder, Jürgen, Dr.-Ing. Verfahren zum Herstellen eines Metall-Keramik-Substrats, vorzugsweise eines Kupfer-Keramik-Substrats
JP3863067B2 (ja) * 2002-06-04 2006-12-27 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合体の製造方法
JP3868854B2 (ja) * 2002-06-14 2007-01-17 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合体およびその製造方法
JP4401096B2 (ja) * 2003-03-26 2010-01-20 Ｄｏｗａホールディングス株式会社 回路基板の製造方法
JP4394477B2 (ja) * 2003-03-27 2010-01-06 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合基板の製造方法
JP5299160B2 (ja) * 2003-03-27 2013-09-25 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板の製造方法
JP4127131B2 (ja) * 2003-06-25 2008-07-30 松下電工株式会社 調光装置
KR101108454B1 (ko) * 2004-04-05 2012-01-31 미쓰비시 마테리알 가부시키가이샤 Ａｌ／ＡｌＮ 접합체, 전력 모듈용 기판 및 전력 모듈, 그리고 Ａｌ／ＡｌＮ 접합체의 제조 방법
EP1921675B1 (de) 2005-08-29 2018-10-31 Hitachi Metals, Ltd. Leiterplatte und diese verwendendes halbleitermodul, herstellungsverfahren für eine leiterplatte
DE102009033029A1 (de) 2009-07-02 2011-01-05 Electrovac Ag Elektronische Vorrichtung
DE102010039728A1 (de) * 2010-08-25 2012-03-01 Robert Bosch Gmbh Verfahren zur Herstellung einer elektrischen Schaltung und elektrischen Schaltung
DE102011103746A1 (de) * 2011-05-31 2012-12-06 Ixys Semiconductor Gmbh Verfahren zum Fügen von Metall-Keramik-Substraten an Metallkörpern
WO2013094213A1 (ja) * 2011-12-20 2013-06-27 株式会社 東芝 セラミックス銅回路基板とそれを用いた半導体装置
DE102013104739B4 (de) * 2013-03-14 2022-10-27 Rogers Germany Gmbh Metall-Keramik-Substrate sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102013102637B4 (de) * 2013-03-14 2017-08-31 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines derartigen Metall-Keramik-Substrates und Anordnung von derartigen Metall-Keramik-Substraten
PL2916627T3 (pl) * 2013-08-29 2019-09-30 Hitachi Metals, Ltd. Sposób wytwarzania ceramicznej płytki drukowanej układu elektronicznego
US10186501B2 (en) * 2013-12-24 2019-01-22 Mitsubishi Electric Corporation Electric power converter and power module
EP3093882B1 (de) * 2014-01-10 2021-02-17 Furukawa Electric Co. Ltd. Elektronische schaltvorrichtung
WO2015141295A1 (ja) * 2014-03-20 2015-09-24 三菱マテリアル株式会社 接合体、パワーモジュール用基板、パワーモジュール、及び、接合体の製造方法
CN105880532A (zh) * 2014-10-28 2016-08-24 廖树汉 重量比铝轻价格降低过半代替钢板的钢瓷复合板
TWI553154B (zh) * 2015-11-03 2016-10-11 Nat Inst Chung Shan Science & Technology A structure for improving the interfacial stress of aluminum nitride substrate and copper coating
WO2017199712A1 (ja) 2016-05-16 2017-11-23 株式会社村田製作所 セラミック電子部品
WO2018089745A1 (en) * 2016-11-11 2018-05-17 The Regents Of The University Of Colorado, A Body Corporate Improved stability of refractory materials in high temperature steam
JP6799479B2 (ja) * 2017-03-03 2020-12-16 Ｄｏｗａメタルテック株式会社 金属−セラミックス回路基板の製造方法
DE102017215048A1 (de) * 2017-08-29 2019-02-28 Conti Temic Microelectronic Gmbh Schaltungsträger für Leistungselektronik und Leistungselektronikmodul mit einem Schaltungsträger
CN114303237A (zh) * 2019-08-29 2022-04-08 京瓷株式会社 电路基板及功率模块
JP2022024309A (ja) 2020-07-15 2022-02-09 Ｄｏｗａメタルテック株式会社 絶縁基板およびその製造方法
CN112638046B (zh) * 2020-12-25 2023-12-15 合肥圣达电子科技实业有限公司 一种蚀刻制备高可靠陶瓷覆铜的方法
JP2023147241A (ja) * 2022-03-29 2023-10-12 株式会社プロテリアル セラミックス基板

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837408A (en) * 1987-05-21 1989-06-06 Ngk Spark Plug Co., Ltd. High density multilayer wiring board and the manufacturing thereof
DE3885074D1 (de) * 1987-07-03 1993-11-25 Duerrwaechter E Dr Doduco Flacher körper, insbesondere zur verwendung als wärmesenke für elektronische leistungsbauelemente.
JPS6459986A (en) * 1987-08-31 1989-03-07 Toshiba Corp Ceramic circuit board
DE3922485C1 (de) * 1989-07-08 1990-06-13 Doduco Gmbh + Co Dr. Eugen Duerrwaechter, 7530 Pforzheim, De
JP2712778B2 (ja) * 1990-07-16 1998-02-16 昭和電工株式会社 金属・セラミックス複合基板の製造方法
US5328751A (en) * 1991-07-12 1994-07-12 Kabushiki Kaisha Toshiba Ceramic circuit board with a curved lead terminal
JPH05347469A (ja) * 1992-06-12 1993-12-27 Toshiba Corp セラミックス回路基板
US5751059A (en) * 1992-06-19 1998-05-12 Thomson-Csf Semiconducteurs Specifiques Pyroelectric sensor
JPH0685154A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体集積回路装置
DE4318241C2 (de) * 1993-06-02 1995-06-29 Schulz Harder Juergen Metallbeschichtetes Substrat mit verbesserter Widerstandsfähigkeit gegen Temperaturwechselbeanspruchung
JPH0777989A (ja) * 1993-06-18 1995-03-20 Kubota Corp エンジン騒音の低減装置
JPH0793326A (ja) * 1993-09-21 1995-04-07 Toshiba Corp マルチメディア処理装置及びマルチメディア処理方法
JP3316714B2 (ja) * 1994-05-31 2002-08-19 三菱電機株式会社 半導体装置
US5542175A (en) * 1994-12-20 1996-08-06 International Business Machines Corporation Method of laminating and circuitizing substrates having openings therein
DE69728919T2 (de) * 1996-02-07 2005-04-14 Hitachi, Ltd. Schaltungsplatine und Halbleiterbauteil mit dieser

Also Published As

Publication number Publication date
JPH10125821A (ja) 1998-05-15
US6054762A (en) 2000-04-25
DE69730388T2 (de) 2005-09-01
EP1453089B1 (de) 2013-02-20
EP0827198A3 (de) 1998-07-15
EP1453089A3 (de) 2004-09-08
EP0827198B1 (de) 2004-08-25
EP0827198A2 (de) 1998-03-04
EP1453089A2 (de) 2004-09-01
JP3512977B2 (ja) 2004-03-31

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