TWI553154B - A structure for improving the interfacial stress of aluminum nitride substrate and copper coating - Google Patents
A structure for improving the interfacial stress of aluminum nitride substrate and copper coating Download PDFInfo
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- TWI553154B TWI553154B TW104136105A TW104136105A TWI553154B TW I553154 B TWI553154 B TW I553154B TW 104136105 A TW104136105 A TW 104136105A TW 104136105 A TW104136105 A TW 104136105A TW I553154 B TWI553154 B TW I553154B
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- Prior art keywords
- layer
- aluminum nitride
- copper
- nitride substrate
- plating layer
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 66
- 229910052802 copper Inorganic materials 0.000 title claims description 66
- 239000010949 copper Substances 0.000 title claims description 66
- 239000000758 substrate Substances 0.000 title claims description 44
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 38
- 239000011248 coating agent Substances 0.000 title claims description 7
- 238000000576 coating method Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 76
- 238000007747 plating Methods 0.000 claims description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000007373 indentation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Electroplating Methods And Accessories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本發明乃提出一種階梯狀型態的銅鍍層結構，使用黃光微影製程與電鍍製程完成此結構製備，降低與氮化鋁基板接觸之銅鍍層膜厚及邊緣之切線角度，可降低氮化鋁基板與銅鍍層間的應力值，有效提升氮化鋁基板的可靠度。
目前半導體產業之3DIC構裝最熱門的研究方向為矽穿孔(Through-Silicon Via)之填銅技術，因為矽穿孔技術應用於IC封裝體中，擁有電性佳、低功率、小尺寸、高密度、高性能等優勢，所以目前主要應用於DRAM之產品。但矽材料能承受之電流大小有限，絕緣效果差，且過大的電流將導致材料之破壞。而氮化鋁材料具有高熱傳導性、高電絕緣性及熱膨脹係數與GaN、AlGaN等半導體材料相近等優越特性，故可取代矽與藍寶石基板於功率元件(IGBT、MOSFET)與高功率發光二極體封裝等領域應用，幫助元件能有更佳的性能表現。
穿孔技術應用於氮化鋁(AlN)晶圓上，將其定義為TAV(Through Aluminum Nitride via)技術，係先在氮化鋁基板上利用雷射或乾蝕刻(ICP)方式形成通孔，再以濺鍍或化學鍍(無電電鍍)方式於基板整體表面與通孔中形成導電晶種層，最後使用電鍍製程結合銅材料或者其他導電材
料(如鎢材料)以全填滿或者孔壁鍍層之方式產生於TAV中及基板表面，如第1圖所示。TAV不僅可以提供電性的連接，亦可提供散熱路徑，增加整個系統之散熱能力。
將氮化鋁基板應用於高功率發光二極體構裝體中，可提供高功率發光二極體之系統整合以及高散熱途徑，增加其生命周期、發光效率及穩定性。然而氮化鋁銅穿孔基板中的銅和氮化鋁，可能由於熱膨脹係數的不匹配，導致變形量過大而破壞。
應用於高功率發光二極體照明時，需要可以承受不同的嚴苛環境，可靠度將會是一大課題。
在氮化鋁基板的TAV製程與金屬化薄膜鍍製中必須經過多道高溫製程，此高溫製程可能導致填孔材料之突出現象而降低其良率。因填孔製程是從通孔側壁向通孔中心填滿導電材料，若未全部填滿而形成孔隙，則會造成整體之電阻上升降低電訊號的傳導效率，若在高溫的環境下則會使孔隙中的空氣膨脹而產生爆孔現象。製程後產出之晶圓將存在著殘留應力，此殘留應力將影響後續發光二極體封裝體應用之可靠度，如填孔材料與銅壁之脫層現象，以及發光二極體封裝體與基板之接合應力等。
氮化鋁基板的表面金屬線路與穿孔填銅製程如下：先在氮化鋁基板上利用雷射或乾蝕刻(ICP)方式形成通孔，再以濺鍍或化學鍍(無電電鍍)方式於基板整體表面與通孔中形成導電晶種層，最後使用電鍍製程結合銅材料或者其他導電材料(如鎢材料)以全填滿或者孔壁鍍層之方式產生於TAV中及基板表面。為提升
散熱能力與導電效率，會增加陶瓷基板表面之金屬線路的銅層厚度，一般市售的金屬化陶瓷基板的銅鍍層厚度為50~100μm，若有特殊的散熱與電性需求則會持續提高銅鍍層的厚度。
將TAV金屬化之氮化鋁基板進行PCT(121℃/100%R.H./33psia(2atm)，96hrs)及TST(-40℃~125℃，200cycles)可靠度測試，結果發現在銅鍍層邊緣處之氮化鋁基板有裂痕產生。利用有限元素模擬分析得到最大主軸應力分佈結果可知銅鍍層邊緣處之氮化鋁基板於一降溫負載下，其最大主軸應力為一拉應力，推測此拉應力為造成基板裂痕之主因。
本發明採用多次黃光微影製程與電鍍製程進行氮化鋁基板的銅鍍層製作，將氮化鋁基板所需的銅鍍層厚度減薄分批堆疊鍍製，並依照預先設定的角度調整黃光微影製程參數將每一層銅鍍層的長度依序向上內縮一預定角度，形成階梯狀型態，於氮化鋁基板上，依序完成附著層、銅晶種層、銅鍍層及鎳鍍層的鍍製，最後形成多層堆疊型態之金屬化線路鍍製。此種結構不僅可得到相同厚度的鍍層，且堆疊鍍層後形成的階梯狀型態可降低邊緣之切線角度，可大幅降低氮化鋁基板與銅鍍層間的應力值，有效提升氮化鋁基板的可靠度，與蝕刻製程相比較，更容易達成與控制。
本發明採用多次黃光微影製程與電鍍製程進行鍍製，首先在一預定的內縮角度下，以濺鍍方式在氮化鋁基板上鍍上厚度為100nm至500nm的鈦金屬或鈦/鎢合金之附著層，接著，在一預定的內縮角度下，以
濺鍍或化學鍍(無電電鍍)方式在附著層上鍍上厚度為0.8um至1um的銅晶種層，再來，在一預定的內縮角度下，以電鍍方式銅晶種層上鍍上厚度為30um至150um銅鍍層，最後，將一厚度為100nm至500nm的鎳鍍層，鍍製於附著層、銅晶種層及銅鍍層外，形成一包覆附著層、銅晶種層及銅鍍層的鎳鍍層，防止銅氧化及擴散。
1‧‧‧氮化鋁基板
2‧‧‧附著層
3‧‧‧銅晶種層
4‧‧‧銅鍍層
5‧‧‧鎳鍍層
第1圖係為本發明實施例完成後之示意圖。
第2圖係為本發明在不同的銅鍍層厚度及不同的銅鍍層邊緣之角度，溫度負載為-165℃下，進行的應力計算分析之結果表示圖。
如第1圖所示，係本發明實施例完成後之示意圖，其包含一氮化鋁基板1，一厚度為100nm至500nm的附著層2，該附著層2以一預定內縮角度θ，使用濺鍍方式鍍於該氮化鋁基板1上，該附著層2為鈦金屬或鈦/鎢合金；一厚度為0.8um至1um的銅晶種層3，該銅晶種層3以一預定內縮角度θ，使用濺鍍方式鍍於附著層2上；一厚度為30um至150um銅鍍層4，該銅鍍層4以一預定內縮角度θ，使用電鍍方式鍍於銅晶種層3上；一厚度為100nm至500nm的鎳鍍層5，該鎳鍍層5包覆於附著層2、銅晶種層3及銅鍍層4，以避免銅氧化及擴散。
為分析本發明所鍍製之氮化鋁基板，鍍製完成後，氮化鋁基板與銅鍍層之界面應力的降低效果，分別對不同的銅鍍層厚度(30μm、50μm、100μm、200μm與300μm)，及銅鍍層邊緣之角度(15°、30°、45°、60°與90°)，溫度負載為-165℃，進行計算分析，結果如第2圖所示，其表示氮化
鋁基板於不同銅鍍層厚度及銅鍍層邊緣角度之情況下，發生於氮化鋁基板K點處之最大主軸應力σprincipal，由結果可知氮化鋁基板之應力皆隨著銅鍍層厚度之降低而減少，並且發現降低銅鍍層邊緣之角度可有效地降低氮化鋁基板之應力。
1‧‧‧氮化鋁基板
2‧‧‧附著層
3‧‧‧銅晶種層
4‧‧‧銅鍍層
5‧‧‧鎳鍍層
Claims (2)
- 一種改善氮化鋁基板與銅鍍層之界面應力的鍍膜結構，包括：一氮化鋁基板；一附著層，該附著層以一預定15°至80°之間的內縮角度，使用濺鍍方式鍍於該氮化鋁基板上，該附著層為鈦金屬或鈦/鎢合金；一銅晶種層，該銅晶種層以一預定15°至80°之間的內縮角度，使用濺鍍方式鍍於附著層上；一銅鍍層，該銅鍍層以一預定15°至80°之間的內縮角度，使用電鍍方式鍍於銅晶種層上；一鎳鍍層，該鎳鍍層包覆於附著層、銅晶種層及銅鍍層。
- 一種改善氮化鋁基板與銅鍍層之界面應力的鍍膜結構，包括：一氮化鋁基板；一厚度為100nm至500nm的附著層，該附著層以一預定15°至80°之間的內縮角度，使用濺鍍方式鍍於該氮化鋁基板上，該附著層為鈦金屬或鈦/鎢合金；一厚度為0.8um至1um的銅晶種層，該銅晶種層以一預定15°至80°之間的內縮角度，使用濺鍍方式鍍於附著層上；一厚度為30um至150um銅鍍層，該銅鍍層以一預定15°至80°之間的內縮角度，使用電鍍方式鍍於銅晶種層上；一厚度為100nm至500nm的鎳鍍層，該鎳鍍層包覆於附著層、銅晶種層及銅鍍層。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104136105A TWI553154B (zh) | 2015-11-03 | 2015-11-03 | A structure for improving the interfacial stress of aluminum nitride substrate and copper coating |
| JP2015233750A JP6277174B2 (ja) | 2015-11-03 | 2015-11-30 | 窒化アルミニウムと銅コーティング層とのインターフェースにおける応力を改善できるコーティング構造 |
| US14/959,285 US10060036B2 (en) | 2015-11-03 | 2015-12-04 | Plated-layer structure for improving interface stress between aluminium nitride substrate and copper-plated layer |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104136105A TWI553154B (zh) | 2015-11-03 | 2015-11-03 | A structure for improving the interfacial stress of aluminum nitride substrate and copper coating |
| JP2015233750A JP6277174B2 (ja) | 2015-11-03 | 2015-11-30 | 窒化アルミニウムと銅コーティング層とのインターフェースにおける応力を改善できるコーティング構造 |
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| TWI553154B true TWI553154B (zh) | 2016-10-11 |
| TW201716629A TW201716629A (zh) | 2017-05-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI667221B (zh) * | 2018-11-14 | 2019-08-01 | 國家中山科學研究院 | 一種降低雙面銅鍍層與氮化鋁基板之界面應力累積的方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI698553B (zh) * | 2019-10-15 | 2020-07-11 | 國家中山科學研究院 | 氮化鋁陶瓷基板表面改質的方法 |
| CN118019434A (zh) * | 2024-04-10 | 2024-05-10 | 济南大学 | 一种降低硅衬底压电薄膜破损率的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0632669A (ja) * | 1992-07-15 | 1994-02-08 | Toshiba Corp | 接合体、メタライズ体およびメタライズ体の製造方法 |
| JP2000323618A (ja) * | 1999-05-07 | 2000-11-24 | Sumitomo Electric Ind Ltd | 銅回路接合基板及びその製造方法 |
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| JPH07106757A (ja) * | 1993-10-01 | 1995-04-21 | Matsushita Electric Ind Co Ltd | 薄膜多層回路基板及びその製造方法 |
| JP3512977B2 (ja) * | 1996-08-27 | 2004-03-31 | 同和鉱業株式会社 | 高信頼性半導体用基板 |
| JPH1093211A (ja) * | 1996-09-17 | 1998-04-10 | Toshiba Corp | 窒化けい素回路基板 |
| KR100371974B1 (ko) * | 1997-05-26 | 2003-02-17 | 스미토모덴키고교가부시키가이샤 | 구리회로접합기판 및 그 제조방법 |
| JP5670119B2 (ja) * | 2009-08-13 | 2015-02-18 | 株式会社ディスコ | 半導体装置及びその製造方法 |
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| JPH0632669A (ja) * | 1992-07-15 | 1994-02-08 | Toshiba Corp | 接合体、メタライズ体およびメタライズ体の製造方法 |
| JP2000323618A (ja) * | 1999-05-07 | 2000-11-24 | Sumitomo Electric Ind Ltd | 銅回路接合基板及びその製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI667221B (zh) * | 2018-11-14 | 2019-08-01 | 國家中山科學研究院 | 一種降低雙面銅鍍層與氮化鋁基板之界面應力累積的方法 |
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| JP6277174B2 (ja) | 2018-02-07 |
| TW201716629A (zh) | 2017-05-16 |
| JP2017103294A (ja) | 2017-06-08 |
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