JP6851449B2 - 両側銅めっき層と窒化アルミニウム基板の界面応力蓄積を低減する方法 - Google Patents
両側銅めっき層と窒化アルミニウム基板の界面応力蓄積を低減する方法 Download PDFInfo
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- JP6851449B2 JP6851449B2 JP2019197111A JP2019197111A JP6851449B2 JP 6851449 B2 JP6851449 B2 JP 6851449B2 JP 2019197111 A JP2019197111 A JP 2019197111A JP 2019197111 A JP2019197111 A JP 2019197111A JP 6851449 B2 JP6851449 B2 JP 6851449B2
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- copper
- aluminum nitride
- copper plating
- nitride substrate
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- 239000010949 copper Substances 0.000 title claims description 143
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 142
- 229910052802 copper Inorganic materials 0.000 title claims description 142
- 238000007747 plating Methods 0.000 title claims description 108
- 239000000758 substrate Substances 0.000 title claims description 95
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 72
- 238000009825 accumulation Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims description 166
- 238000000034 method Methods 0.000 claims description 58
- 238000009713 electroplating Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910001080 W alloy Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 description 25
- 238000012360 testing method Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0379—Stacked conductors
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09736—Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
2 付着層
3 銅シード層
4 対称構造銅緩衝層
5 銅めっき層
6 ニッケルメッキ層
S1-S6 ステップ
Claims (3)
- 窒化アルミニウム基板と、該窒化アルミニウム基板の両面に被覆する両側銅めっき層との界面応力蓄積を低減する方法であって、
窒化アルミニウム基板を提供し;
スパッタリング方式で付着層を前記窒化アルミニウム基板に被覆し、前記付着層は、チタン合金又はチタン/タングステン合金であり;
スパッタリング方式で銅シード層を前記付着層に被覆し;
電気メッキ方式で対称構造銅緩衝層を前記銅シード層に被覆し;
電気メッキ方式で銅めっき層を前記対称構造銅緩衝層に被覆し;及び
ニッケルメッキ層で前記付着層、前記銅シード層、前記対称構造銅緩衝層及び前記銅めっき層を包み覆うステップを含む、方法。 - 請求項1に記載の方法であって、
前記対称構造銅緩衝層の厚さが30μm〜100μmである、方法。 - 窒化アルミニウム基板と、該窒化アルミニウム基板の両面に被覆する両側銅めっき層との界面応力蓄積を低減する方法であって、
窒化アルミニウム基板を提供し;
スパッタリング方式で厚さが100nm〜500nmである付着層を前記窒化アルミニウム基板に被覆し、前記付着層は、チタン合金又はチタン/タングステン合金であり;
スパッタリング方式で厚さが0.8μm〜1μmである銅シード層を前記付着層に被覆し;
電気メッキ方式で厚さが30μm〜100μmである対称構造銅緩衝層を前記銅シード層に被覆し;
電気メッキ方式で厚さが30μm〜150μmである銅めっき層を前記対称構造銅緩衝層に被覆し;及び
厚さが100nm〜500nmであるニッケルメッキ層で前記付着層、前記銅シード層、前記対称構造銅緩衝層及び前記銅めっき層を包み覆うステップを含む、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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TW107140694A TWI667221B (zh) | 2018-11-14 | 2018-11-14 | 一種降低雙面銅鍍層與氮化鋁基板之界面應力累積的方法 |
TW107140694 | 2018-11-14 |
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JP2020084321A JP2020084321A (ja) | 2020-06-04 |
JP6851449B2 true JP6851449B2 (ja) | 2021-03-31 |
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Country Status (3)
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US (1) | US10923621B2 (ja) |
JP (1) | JP6851449B2 (ja) |
TW (1) | TWI667221B (ja) |
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CN114286513B (zh) * | 2021-11-30 | 2024-02-06 | 通元科技(惠州)有限公司 | 一种非对称预应力消除型led背板及其制作方法 |
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JP2909856B2 (ja) * | 1991-11-14 | 1999-06-23 | 日本特殊陶業株式会社 | セラミックス基板と金属の接合体 |
JP3827113B2 (ja) * | 1997-12-08 | 2006-09-27 | 株式会社日本セラテック | セラミック−金属層からなる複合部材の製造方法 |
JP2001068828A (ja) * | 1999-08-27 | 2001-03-16 | Ngk Spark Plug Co Ltd | 配線基板及びその製造方法 |
DE102004056879B4 (de) * | 2004-10-27 | 2008-12-04 | Curamik Electronics Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
DE102005042554B4 (de) * | 2005-08-10 | 2008-04-30 | Curamik Electronics Gmbh | Metall-Keramik-Substrat und Verfahren zur Herstellung eines Metall-Keramik-Substrats |
KR101194456B1 (ko) * | 2010-11-05 | 2012-10-24 | 삼성전기주식회사 | 방열기판 및 그 제조방법 |
JP5392272B2 (ja) * | 2011-01-13 | 2014-01-22 | 株式会社豊田自動織機 | 両面基板、半導体装置、半導体装置の製造方法 |
KR20130139011A (ko) * | 2012-06-12 | 2013-12-20 | 한국전자통신연구원 | Dbc 기판 및 전력 반도체 모듈 |
RU2543518C1 (ru) * | 2013-10-03 | 2015-03-10 | Общество с ограниченной ответственностью "Компания РМТ"(ООО"РМТ") | Способ изготовления двусторонней печатной платы |
JP2015211194A (ja) * | 2014-04-30 | 2015-11-24 | イビデン株式会社 | プリント配線板および半導体パッケージ、ならびにプリント配線板の製造方法 |
JP6397313B2 (ja) * | 2014-11-11 | 2018-09-26 | イビデン株式会社 | プリント配線板および半導体パッケージ |
CN105990266B (zh) * | 2015-02-26 | 2018-12-07 | 台达电子工业股份有限公司 | 功率转换电路的封装模块及其制造方法 |
CN107889559B (zh) * | 2015-04-24 | 2020-04-28 | 阿莫善斯有限公司 | 陶瓷基板的制造方法及由其所制造的陶瓷基板 |
KR20170049389A (ko) * | 2015-10-27 | 2017-05-10 | 주식회사 아모센스 | 세라믹 기판 제조 방법 및 세라믹 기판 |
TWI553154B (zh) * | 2015-11-03 | 2016-10-11 | Nat Inst Chung Shan Science & Technology | A structure for improving the interfacial stress of aluminum nitride substrate and copper coating |
CN110301050B (zh) * | 2017-02-15 | 2023-12-08 | 日本特殊陶业株式会社 | 热电元件内置封装 |
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2018
- 2018-11-14 TW TW107140694A patent/TWI667221B/zh active
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2019
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- 2019-10-30 JP JP2019197111A patent/JP6851449B2/ja active Active
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US20200152825A1 (en) | 2020-05-14 |
US10923621B2 (en) | 2021-02-16 |
TWI667221B (zh) | 2019-08-01 |
TW202017889A (zh) | 2020-05-16 |
JP2020084321A (ja) | 2020-06-04 |
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