DE69510583D1 - Galliumoxid-Beschichtung für optoelektronische Bauelemente - Google Patents

Galliumoxid-Beschichtung für optoelektronische Bauelemente

Info

Publication number
DE69510583D1
DE69510583D1 DE69510583T DE69510583T DE69510583D1 DE 69510583 D1 DE69510583 D1 DE 69510583D1 DE 69510583 T DE69510583 T DE 69510583T DE 69510583 T DE69510583 T DE 69510583T DE 69510583 D1 DE69510583 D1 DE 69510583D1
Authority
DE
Germany
Prior art keywords
oxide coating
gallium oxide
optoelectronic components
optoelectronic
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510583T
Other languages
English (en)
Other versions
DE69510583T2 (de
Inventor
Niloy Kumar Dutta
Russel Fischer
Neil Edmund James Hunt
Matthias Passlack
Erdmann Frederick Schubert
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69510583D1 publication Critical patent/DE69510583D1/de
Application granted granted Critical
Publication of DE69510583T2 publication Critical patent/DE69510583T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
DE69510583T 1994-03-23 1995-03-16 Galliumoxid-Beschichtung für optoelektronische Bauelemente Expired - Fee Related DE69510583T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/217,332 US5550089A (en) 1994-03-23 1994-03-23 Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.

Publications (2)

Publication Number Publication Date
DE69510583D1 true DE69510583D1 (de) 1999-08-12
DE69510583T2 DE69510583T2 (de) 2000-03-16

Family

ID=22810617

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510583T Expired - Fee Related DE69510583T2 (de) 1994-03-23 1995-03-16 Galliumoxid-Beschichtung für optoelektronische Bauelemente

Country Status (8)

Country Link
US (2) US5550089A (de)
EP (1) EP0674017B1 (de)
JP (1) JP3420374B2 (de)
KR (1) KR100205156B1 (de)
CA (1) CA2136580C (de)
DE (1) DE69510583T2 (de)
HK (1) HK1003439A1 (de)
TW (1) TW264574B (de)

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JP3502651B2 (ja) * 1993-02-08 2004-03-02 トリクイント セミコンダクター テキサス、エルピー 電極形成法
US6469357B1 (en) 1994-03-23 2002-10-22 Agere Systems Guardian Corp. Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
US5912498A (en) * 1997-10-10 1999-06-15 Lucent Technologies Inc. Article comprising an oxide layer on GAN
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
JP3799073B2 (ja) * 1994-11-04 2006-07-19 株式会社日立製作所 ドライエッチング方法
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
US5903037A (en) * 1997-02-24 1999-05-11 Lucent Technologies Inc. GaAs-based MOSFET, and method of making same
US6030453A (en) * 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
US6025281A (en) * 1997-12-18 2000-02-15 Motorola, Inc. Passivation of oxide-compound semiconductor interfaces
US5945718A (en) * 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6159834A (en) * 1998-02-12 2000-12-12 Motorola, Inc. Method of forming a gate quality oxide-compound semiconductor structure
US6094295A (en) * 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
DE19812562A1 (de) * 1998-03-21 1999-09-23 Joachim Sacher Beschichtungs-Verfahren und -Vorrichtung
US6330264B1 (en) * 1999-01-18 2001-12-11 Corning Lasertron, Inc. Signal band antireflection coating for pump facet in fiber amplifier system
US6369408B1 (en) 1999-10-06 2002-04-09 Agere Systems Guardian Corp. GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same
US6521961B1 (en) 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
US6445015B1 (en) 2000-05-04 2002-09-03 Osemi, Incorporated Metal sulfide semiconductor transistor devices
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6451711B1 (en) 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US6670651B1 (en) 2000-05-04 2003-12-30 Osemi, Inc. Metal sulfide-oxide semiconductor transistor devices
IL137208A0 (en) * 2000-07-06 2001-07-24 Yeda Res & Dev Method for depth profiling of a sample
JP4083396B2 (ja) * 2000-07-10 2008-04-30 独立行政法人科学技術振興機構 紫外透明導電膜とその製造方法
US6756320B2 (en) * 2002-01-18 2004-06-29 Freescale Semiconductor, Inc. Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure
US7442654B2 (en) * 2002-01-18 2008-10-28 Freescale Semiconductor, Inc. Method of forming an oxide layer on a compound semiconductor structure
WO2003063227A2 (en) * 2002-01-22 2003-07-31 Massachusetts Institute Of Technology A method of fabrication for iii-v semiconductor surface passivation
JP3679097B2 (ja) 2002-05-31 2005-08-03 株式会社光波 発光素子
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
WO2005022580A1 (en) * 2003-09-02 2005-03-10 Epitactix Pty Ltd Heterojunction bipolar transistor with tunnelling mis emitter junction
WO2005048318A2 (en) * 2003-11-17 2005-05-26 Osemi, Inc. Nitride metal oxide semiconductor integrated transistor devices
US20080282983A1 (en) * 2003-12-09 2008-11-20 Braddock Iv Walter David High Temperature Vacuum Evaporation Apparatus
CN101501816A (zh) * 2005-03-25 2009-08-05 通快光子学公司 激光器腔面钝化
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
JP3950473B2 (ja) * 2006-11-06 2007-08-01 シャープ株式会社 化合物半導体レーザ
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US20080157073A1 (en) * 2006-12-29 2008-07-03 Walter David Braddock Integrated Transistor Devices
US7821637B1 (en) 2007-02-22 2010-10-26 J.A. Woollam Co., Inc. System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing
DE102008018928A1 (de) * 2008-04-15 2009-10-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102008020793A1 (de) 2008-04-22 2009-11-05 Forschungsverbund Berlin E.V. Halbleiterbauelement, Vorprodukt und Verfahren zur Herstellung
US8369915B2 (en) * 2009-11-06 2013-02-05 Wisconsin Alumni Research Foundation Integrated miniaturized fiber optic probe
FI20106181A0 (fi) 2010-11-11 2010-11-11 Pekka Laukkanen Menetelmä substraatin muodostamiseksi ja substraatti
US11027949B2 (en) 2016-05-20 2021-06-08 Murata Machinery, Ltd. Transport vehicle and transport method
CN107481939B (zh) * 2017-07-20 2021-06-15 中国电子科技集团公司第十三研究所 帽层结构氧化镓场效应晶体管的制备方法
CN110379857B (zh) * 2019-07-02 2022-01-25 深圳第三代半导体研究院 一种包含p型氧化镓薄层的开关器件及其制备方法
CN112382691B (zh) * 2020-10-16 2022-05-17 华南师范大学 含氮化镓/氧化镓纳米柱阵列的自供电探测器及制备方法

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CA920285A (en) * 1970-11-30 1973-01-30 L. Hartman Robert Extending the operating life of light emitting p-n junction devices
US4001858A (en) * 1974-08-28 1977-01-04 Bell Telephone Laboratories, Incorporated Simultaneous molecular beam deposition of monocrystalline and polycrystalline iii(a)-v(a) compounds to produce semiconductor devices
US4617192A (en) * 1982-12-21 1986-10-14 At&T Bell Laboratories Process for making optical INP devices
US4749255A (en) * 1985-12-09 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Coating for optical devices
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US4994140A (en) * 1989-01-10 1991-02-19 Optoelectronics Technology Research Corporation Method capable of forming a fine pattern without crystal defects
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
DE4321301A1 (de) * 1992-07-06 1994-01-13 Zeiss Carl Fa Dünne Schicht aus Galliumoxid und Herstellverfahren dafür
US5550084A (en) * 1994-01-19 1996-08-27 Advanced Micro Devices, Inc. Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source

Also Published As

Publication number Publication date
JP3420374B2 (ja) 2003-06-23
CA2136580C (en) 1998-09-22
TW264574B (de) 1995-12-01
JPH07273405A (ja) 1995-10-20
HK1003439A1 (en) 1998-10-30
KR100205156B1 (ko) 1999-07-01
US5821171A (en) 1998-10-13
KR950034857A (ko) 1995-12-28
DE69510583T2 (de) 2000-03-16
EP0674017A1 (de) 1995-09-27
EP0674017B1 (de) 1999-07-07
CA2136580A1 (en) 1995-09-24
US5550089A (en) 1996-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee