DE69717469T2 - Taktdurchgriffsverminderungssystem für stromgeschaltete speicherzellen - Google Patents

Taktdurchgriffsverminderungssystem für stromgeschaltete speicherzellen

Info

Publication number
DE69717469T2
DE69717469T2 DE69717469T DE69717469T DE69717469T2 DE 69717469 T2 DE69717469 T2 DE 69717469T2 DE 69717469 T DE69717469 T DE 69717469T DE 69717469 T DE69717469 T DE 69717469T DE 69717469 T2 DE69717469 T2 DE 69717469T2
Authority
DE
Germany
Prior art keywords
cross
storage cells
reduction system
powered storage
powered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69717469T
Other languages
English (en)
Other versions
DE69717469D1 (de
Inventor
Jean-Jacques Kazazian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of DE69717469D1 publication Critical patent/DE69717469D1/de
Application granted granted Critical
Publication of DE69717469T2 publication Critical patent/DE69717469T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/028—Current mode circuits, e.g. switched current memories
DE69717469T 1996-09-16 1997-09-04 Taktdurchgriffsverminderungssystem für stromgeschaltete speicherzellen Expired - Lifetime DE69717469T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/714,376 US5783952A (en) 1996-09-16 1996-09-16 Clock feedthrough reduction system for switched current memory cells
PCT/US1997/015590 WO1998011554A1 (en) 1996-09-16 1997-09-04 Clock feedthrough reduction system for switched current memory cells

Publications (2)

Publication Number Publication Date
DE69717469D1 DE69717469D1 (de) 2003-01-09
DE69717469T2 true DE69717469T2 (de) 2003-06-26

Family

ID=24869791

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69717469T Expired - Lifetime DE69717469T2 (de) 1996-09-16 1997-09-04 Taktdurchgriffsverminderungssystem für stromgeschaltete speicherzellen

Country Status (9)

Country Link
US (1) US5783952A (de)
EP (1) EP0925588B1 (de)
JP (1) JP2001523371A (de)
KR (1) KR100466082B1 (de)
CN (1) CN1163909C (de)
DE (1) DE69717469T2 (de)
HK (1) HK1021064A1 (de)
TW (1) TW337019B (de)
WO (1) WO1998011554A1 (de)

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US7742064B2 (en) 2001-10-30 2010-06-22 Semiconductor Energy Laboratory Co., Ltd Signal line driver circuit, light emitting device and driving method thereof
US6963336B2 (en) * 2001-10-31 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
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US6927618B2 (en) * 2001-11-28 2005-08-09 Semiconductor Energy Laboratory Co., Ltd. Electric circuit
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TW591586B (en) * 2003-04-10 2004-06-11 Toppoly Optoelectronics Corp Data-line driver circuits for current-programmed electro-luminescence display device
JP4543625B2 (ja) * 2003-05-27 2010-09-15 ソニー株式会社 表示装置
US6844759B2 (en) * 2003-06-10 2005-01-18 Concordia University Method and circuit for eliminating charge injection from transistor switches
KR100515300B1 (ko) 2003-10-07 2005-09-15 삼성에스디아이 주식회사 전류 샘플/홀드 회로와 전류 샘플/홀드 방법 및 이를이용한 역다중화 장치와 디스플레이 장치
CA2490858A1 (en) 2004-12-07 2006-06-07 Ignis Innovation Inc. Driving method for compensated voltage-programming of amoled displays
US7068024B1 (en) * 2004-12-30 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage regulator having positive temperature coefficient for self-compensation and related method of regulating voltage
JP4779113B2 (ja) * 2005-02-09 2011-09-28 国立大学法人 名古屋工業大学 サンプルホールド回路
CN102663977B (zh) 2005-06-08 2015-11-18 伊格尼斯创新有限公司 用于驱动发光器件显示器的方法和系统
EP1971975B1 (de) 2006-01-09 2015-10-21 Ignis Innovation Inc. Verfahren und system zur ansteuerung einer aktivmatrixanzeigeschaltung
US9489891B2 (en) 2006-01-09 2016-11-08 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9269322B2 (en) 2006-01-09 2016-02-23 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
FR2899841B1 (fr) * 2006-04-12 2008-07-04 Bic Soc Pointe d'ecriture pour effectuer des traces de differentes largeurs et instrument d'ecriture comprenant une telle pointe
CN102057418B (zh) 2008-04-18 2014-11-12 伊格尼斯创新公司 用于发光器件显示器的系统和驱动方法
CA2637343A1 (en) 2008-07-29 2010-01-29 Ignis Innovation Inc. Improving the display source driver
US9370075B2 (en) 2008-12-09 2016-06-14 Ignis Innovation Inc. System and method for fast compensation programming of pixels in a display
US8497828B2 (en) 2009-11-12 2013-07-30 Ignis Innovation Inc. Sharing switch TFTS in pixel circuits
CA2687631A1 (en) 2009-12-06 2011-06-06 Ignis Innovation Inc Low power driving scheme for display applications
CA2696778A1 (en) 2010-03-17 2011-09-17 Ignis Innovation Inc. Lifetime, uniformity, parameter extraction methods
KR101132216B1 (ko) * 2010-12-02 2012-04-02 금오공과대학교 산학협력단 라우팅 더미 커패시터를 구비한 디지털 아날로그 변환기
US9351368B2 (en) 2013-03-08 2016-05-24 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US20140368491A1 (en) 2013-03-08 2014-12-18 Ignis Innovation Inc. Pixel circuits for amoled displays
US9886899B2 (en) 2011-05-17 2018-02-06 Ignis Innovation Inc. Pixel Circuits for AMOLED displays
EP2945147B1 (de) 2011-05-28 2018-08-01 Ignis Innovation Inc. Verfahren zur schnellkompensationsprogrammierung von pixeln in einer anzeige
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
CN102915071A (zh) * 2012-10-23 2013-02-06 南京航空航天大学 面向混合信号处理的低电压低功耗开关电流采样保持电路
US8975948B2 (en) * 2012-11-15 2015-03-10 Texas Instruments Incorporated Wide common mode range transmission gate
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
CA2894717A1 (en) 2015-06-19 2016-12-19 Ignis Innovation Inc. Optoelectronic device characterization in array with shared sense line
KR102158382B1 (ko) 2013-08-22 2020-09-22 삼성디스플레이 주식회사 전류 메모리 셀 및 이를 포함하는 전류 모드 디지털 아날로그 컨버터
CA2873476A1 (en) 2014-12-08 2016-06-08 Ignis Innovation Inc. Smart-pixel display architecture
CA2886862A1 (en) 2015-04-01 2016-10-01 Ignis Innovation Inc. Adjusting display brightness for avoiding overheating and/or accelerated aging
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
CA2908285A1 (en) 2015-10-14 2017-04-14 Ignis Innovation Inc. Driver with multiple color pixel structure
US9715941B2 (en) 2015-10-30 2017-07-25 Sony Semiconductor Solutions Corporation State machine controlled MOS linear resistor
US9728271B2 (en) * 2015-10-30 2017-08-08 Sony Semiconductor Solutions Corporation Charge injection noise reduction in sample-and-hold circuit
KR101947303B1 (ko) 2016-08-16 2019-02-12 선전 구딕스 테크놀로지 컴퍼니, 리미티드 전류 샘플링 유지 회로 및 신호 수집 시스템
KR101767172B1 (ko) 2016-09-12 2017-08-10 서울과학기술대학교 산학협력단 클락-피드스루(clock-feedthrough) 최소화하기 위한 전류메모리 회로
US11469223B2 (en) * 2019-05-31 2022-10-11 Analog Devices International Unlimited Company High precision switched capacitor MOSFET current measurement technique
CN115622549B (zh) * 2022-12-19 2023-02-28 晟矽微电子(南京)有限公司 开关电路、数模转换器、芯片及电子设备

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Also Published As

Publication number Publication date
TW337019B (en) 1998-07-21
EP0925588A1 (de) 1999-06-30
EP0925588A4 (de) 1999-07-21
JP2001523371A (ja) 2001-11-20
CN1234902A (zh) 1999-11-10
DE69717469D1 (de) 2003-01-09
US5783952A (en) 1998-07-21
HK1021064A1 (en) 2000-05-26
CN1163909C (zh) 2004-08-25
KR100466082B1 (ko) 2005-01-13
EP0925588B1 (de) 2002-11-27
KR20000036128A (ko) 2000-06-26
WO1998011554A1 (en) 1998-03-19

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