DE69709436T2 - Optischer Halbleitermodulator und sein Herstellunsgverfahren - Google Patents

Optischer Halbleitermodulator und sein Herstellunsgverfahren

Info

Publication number
DE69709436T2
DE69709436T2 DE69709436T DE69709436T DE69709436T2 DE 69709436 T2 DE69709436 T2 DE 69709436T2 DE 69709436 T DE69709436 T DE 69709436T DE 69709436 T DE69709436 T DE 69709436T DE 69709436 T2 DE69709436 T2 DE 69709436T2
Authority
DE
Germany
Prior art keywords
manufacturing process
optical semiconductor
semiconductor modulator
modulator
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69709436T
Other languages
English (en)
Other versions
DE69709436D1 (de
Inventor
Masashige Ishizaka
Hiroyuki Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69709436D1 publication Critical patent/DE69709436D1/de
Publication of DE69709436T2 publication Critical patent/DE69709436T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/25—Frequency chirping of an optical modulator; Arrangements or methods for the pre-set or tuning thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/25—Frequency chirping of an optical modulator; Arrangements or methods for the pre-set or tuning thereof
    • G02F2203/255—Negative chirp

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Communication System (AREA)
DE69709436T 1996-05-22 1997-05-22 Optischer Halbleitermodulator und sein Herstellunsgverfahren Expired - Fee Related DE69709436T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8127497A JP2955986B2 (ja) 1996-05-22 1996-05-22 半導体光変調器及びその製造方法

Publications (2)

Publication Number Publication Date
DE69709436D1 DE69709436D1 (de) 2002-02-07
DE69709436T2 true DE69709436T2 (de) 2002-08-22

Family

ID=14961439

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709436T Expired - Fee Related DE69709436T2 (de) 1996-05-22 1997-05-22 Optischer Halbleitermodulator und sein Herstellunsgverfahren

Country Status (4)

Country Link
US (2) US6150667A (de)
EP (1) EP0809129B1 (de)
JP (1) JP2955986B2 (de)
DE (1) DE69709436T2 (de)

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US6310902B1 (en) * 1998-04-29 2001-10-30 Agere Systems Optoelectronics Guardian Corp. Modulator for analog applications
SE522417C2 (sv) * 1998-10-15 2004-02-10 Ericsson Telefon Ab L M Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator
US6528337B1 (en) * 1999-04-08 2003-03-04 The Furukawa Electric Co., Ltd. Process of producing semiconductor layer structure
JP4656459B2 (ja) * 1999-12-02 2011-03-23 Ｏｋｉセミコンダクタ株式会社 半導体光機能装置および半導体光機能素子
JP2001274510A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 導波路型光素子及びその製造方法
US6597718B2 (en) * 2000-07-18 2003-07-22 Multiplex, Inc. Electroabsorption-modulated fabry perot laser
US7031612B2 (en) 2000-07-18 2006-04-18 Multiplex, Inc. Optical transponders and transceivers
WO2002013343A2 (en) 2000-08-09 2002-02-14 Jds Uniphase Corporation Tunable distributed feedback laser
US6459521B1 (en) * 2000-08-28 2002-10-01 Agere Systems Guardian Corp. Electroabsorption modulator integrated distributed feedback laser transmitter
JP2002072010A (ja) * 2000-09-05 2002-03-12 Nippon Sheet Glass Co Ltd 波長選択性を有する光学素子
US6376795B1 (en) * 2000-10-24 2002-04-23 Lsi Logic Corporation Direct current dechucking system
US7345327B2 (en) * 2000-11-27 2008-03-18 Kopin Corporation Bipolar transistor
AU2002219895A1 (en) * 2000-11-27 2002-06-03 Kopin Corporation Bipolar transistor with lattice matched base layer
US6847060B2 (en) * 2000-11-27 2005-01-25 Kopin Corporation Bipolar transistor with graded base layer
WO2002061821A2 (en) 2001-01-08 2002-08-08 Kopin Corporation Method of preparing indium phosphide heterojunction bipolar transistors
JP2002222989A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
WO2003096759A1 (en) 2001-03-30 2003-11-20 Santur Corporation High speed modulation of arrayed lasers
US6813300B2 (en) 2001-03-30 2004-11-02 Santur Corporation Alignment of an on chip modulator
US6781734B2 (en) 2001-03-30 2004-08-24 Santur Corporation Modulator alignment for laser
US6922278B2 (en) 2001-03-30 2005-07-26 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
DE10128655B4 (de) * 2001-06-15 2005-12-15 Orga Kartensysteme Gmbh Chipkarte mit optischem Modulator und Verfahren zur Übertragung einer Information von einer Chipkarte
US6944197B2 (en) * 2001-06-26 2005-09-13 University Of Maryland, Baltimore County Low crosstalk optical gain medium and method for forming same
US7120183B2 (en) * 2001-07-11 2006-10-10 Optium Corporation Electro-absorption modulated laser with high operating temperature tolerance
SE520139C2 (sv) 2001-11-30 2003-06-03 Optillion Ab Lasermodulator med elektriskt separerade laser- och modulatorsektioner
JP2004109312A (ja) * 2002-09-17 2004-04-08 Mitsubishi Electric Corp 導波路型半導体光デバイスおよびその製造方法
US20050141800A1 (en) * 2002-09-17 2005-06-30 Mitsubishi Denki Kabushiki Kaisha Waveguide semiconductor optical device and process of fabricating the device
JP4030847B2 (ja) * 2002-09-20 2008-01-09 ユーディナデバイス株式会社 半導体受光装置
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
TWI240959B (en) 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US7573928B1 (en) 2003-09-05 2009-08-11 Santur Corporation Semiconductor distributed feedback (DFB) laser array with integrated attenuator
JP2005175295A (ja) * 2003-12-12 2005-06-30 Hitachi Ltd 半導体光素子及び光モジュール
JP2006032623A (ja) * 2004-07-15 2006-02-02 Sharp Corp 半導体レーザ素子の製造方法
GB2417126A (en) * 2004-08-09 2006-02-15 Qinetiq Ltd Method for fabricating lateral semiconductor device
US7102807B2 (en) * 2004-10-19 2006-09-05 National Central University High-speed electro-absorption modulator with low drive voltage
US7566948B2 (en) 2004-10-20 2009-07-28 Kopin Corporation Bipolar transistor with enhanced base transport
JP6610044B2 (ja) * 2014-07-14 2019-11-27 住友電気工業株式会社 半導体光変調器および半導体光変調器の製造方法
CN113608371B (zh) * 2021-07-13 2024-03-19 厦门大学 一种基于ii类断带能隙量子阱的红外电吸收调制器

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JPS61212823A (ja) * 1985-03-18 1986-09-20 Nec Corp 光変調器
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JPH03293622A (ja) * 1990-04-12 1991-12-25 Hitachi Ltd 光変調器
US5227648A (en) * 1991-12-03 1993-07-13 Woo Jong Chun Resonance cavity photodiode array resolving wavelength and spectrum
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JP3223562B2 (ja) * 1992-04-07 2001-10-29 株式会社日立製作所 光送信装置、光伝送装置および光変調器
JPH06214169A (ja) * 1992-06-08 1994-08-05 Texas Instr Inc <Ti> 制御可能な光学的周期的表面フィルタ
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JPH06181366A (ja) * 1992-12-14 1994-06-28 Fujitsu Ltd 光半導体装置
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FR2707766B1 (fr) * 1993-07-02 1995-12-08 Fabrice Devaux Modulateur électroabsorbant et générateur d'impulsions optiques le comportant.
JP2669335B2 (ja) * 1993-12-20 1997-10-27 日本電気株式会社 半導体光源及びその製造方法
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JPH07234389A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd 半導体光素子
JP2982619B2 (ja) * 1994-06-29 1999-11-29 日本電気株式会社 半導体光導波路集積型受光素子
JP2842292B2 (ja) * 1994-09-16 1998-12-24 日本電気株式会社 半導体光集積装置および製造方法
JPH08146365A (ja) * 1994-11-16 1996-06-07 Nec Corp 半導体マッハツェンダー変調装置及びその製造方法
EP1271625A3 (de) * 1994-12-27 2007-05-16 Fujitsu Limited Verfahren zur Herstellung eines Verbindungshalbleiter-Bauelements
GB2302738B (en) * 1995-06-28 1999-03-03 Northern Telecom Ltd Semiconductor modulator with a shift
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Also Published As

Publication number Publication date
EP0809129B1 (de) 2002-01-02
EP0809129A3 (de) 1998-05-06
US6426236B1 (en) 2002-07-30
EP0809129A2 (de) 1997-11-26
US6150667A (en) 2000-11-21
JPH09311304A (ja) 1997-12-02
JP2955986B2 (ja) 1999-10-04
DE69709436D1 (de) 2002-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee