DE69706948D1 - Weichlotwerkstoff und dessen Verwendung in ein elektronisches Bauteil - Google Patents

Weichlotwerkstoff und dessen Verwendung in ein elektronisches Bauteil

Info

Publication number
DE69706948D1
DE69706948D1 DE69706948T DE69706948T DE69706948D1 DE 69706948 D1 DE69706948 D1 DE 69706948D1 DE 69706948 T DE69706948 T DE 69706948T DE 69706948 T DE69706948 T DE 69706948T DE 69706948 D1 DE69706948 D1 DE 69706948D1
Authority
DE
Germany
Prior art keywords
electronic component
solder material
soft solder
soft
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69706948T
Other languages
English (en)
Inventor
Toshinori Ogashiwa
Takatoshi Arikawa
Masami Yokozawa
Kazuhiro Aoi
Yoshiharu Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo Kk Tokio/tokyo
Tanaka Denshi Kogyo KK
Panasonic Holdings Corp
Original Assignee
Tanaka Denshi Kogyo Kk Tokio/tokyo
Tanaka Denshi Kogyo KK
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo Kk Tokio/tokyo, Tanaka Denshi Kogyo KK, Matsushita Electric Industrial Co Ltd filed Critical Tanaka Denshi Kogyo Kk Tokio/tokyo
Application granted granted Critical
Publication of DE69706948D1 publication Critical patent/DE69706948D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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DE69706948T 1996-10-17 1997-10-15 Weichlotwerkstoff und dessen Verwendung in ein elektronisches Bauteil Expired - Lifetime DE69706948D1 (de)

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JP27508796A JP3226213B2 (ja) 1996-10-17 1996-10-17 半田材料及びそれを用いた電子部品

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US (1) US6187114B1 (de)
EP (1) EP0847828B1 (de)
JP (1) JP3226213B2 (de)
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DE (1) DE69706948D1 (de)
MY (1) MY119338A (de)
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Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649127B2 (en) 1996-12-17 2003-11-18 Sony Chemicals Corp Lead-free solder material having good wettability
JP3601278B2 (ja) * 1996-12-17 2004-12-15 ソニー株式会社 はんだ材料
JP3622462B2 (ja) 1997-12-16 2005-02-23 株式会社日立製作所 半導体装置
GB9823349D0 (en) * 1998-10-27 1998-12-23 Glacier Vandervell Ltd Bearing material
GB9903552D0 (en) * 1999-02-16 1999-04-07 Multicore Solders Ltd Reflow peak temperature reduction of solder alloys
FR2799337B1 (fr) * 1999-10-05 2002-01-11 St Microelectronics Sa Procede de realisation de connexions electriques sur la surface d'un boitier semi-conducteur a gouttes de connexion electrique
TW516984B (en) * 1999-12-28 2003-01-11 Toshiba Corp Solder material, device using the same and manufacturing process thereof
JP3775172B2 (ja) * 2000-05-22 2006-05-17 株式会社村田製作所 はんだ組成物およびはんだ付け物品
TWI248384B (en) * 2000-06-12 2006-02-01 Hitachi Ltd Electronic device
US6660226B1 (en) 2000-08-07 2003-12-09 Murata Manufacturing Co., Ltd. Lead free solder and soldered article
JP2002093855A (ja) * 2000-09-18 2002-03-29 Toshiba Corp 半導体装置
CN100578778C (zh) 2000-12-21 2010-01-06 株式会社日立制作所 电子器件
JP3990169B2 (ja) 2002-03-06 2007-10-10 内橋エステック株式会社 合金型温度ヒュ−ズ
JP4001757B2 (ja) 2002-03-06 2007-10-31 内橋エステック株式会社 合金型温度ヒュ−ズ
JP4101536B2 (ja) 2002-03-06 2008-06-18 内橋エステック株式会社 合金型温度ヒューズ
JP4162917B2 (ja) 2002-05-02 2008-10-08 内橋エステック株式会社 合金型温度ヒュ−ズ
AU2003272790A1 (en) * 2002-10-08 2004-05-04 Honeywell International Inc. Semiconductor packages, lead-containing solders and anodes and methods of removing alpha-emitters from materials
KR100647103B1 (ko) * 2003-06-30 2006-11-23 미쓰이 긴조꾸 고교 가부시키가이샤 세륨계 연마재 및 그 원료
CN100509257C (zh) * 2003-10-07 2009-07-08 千住金属工业株式会社 一种无铅焊球用于生产焊锡凸起的用途以及焊锡凸起
EP1769881B1 (de) * 2004-06-08 2017-07-12 Senju Metal Industry Co., Ltd. Verfahren zur herstellung eines schaumstofflötmittels mit dispergierten hochschmelzenden metallteilchen
US7074627B2 (en) * 2004-06-29 2006-07-11 Freescale Semiconductor, Inc. Lead solder indicator and method
JP2006100739A (ja) * 2004-09-30 2006-04-13 Toshiba Corp 接合体、半導体装置、接合方法及び半導体装置の製造方法
JP4635715B2 (ja) * 2005-05-20 2011-02-23 富士電機システムズ株式会社 はんだ合金およびそれを用いた半導体装置
JP2005324257A (ja) * 2005-07-19 2005-11-24 Murata Mfg Co Ltd はんだ付け物品
JP4569423B2 (ja) 2005-08-31 2010-10-27 株式会社日立製作所 半導体装置の製造方法
JP4499752B2 (ja) * 2006-03-03 2010-07-07 日本エレクトロプレイテイング・エンジニヤース株式会社 電子部品
US20100092335A1 (en) * 2006-12-29 2010-04-15 Iljin Copper Foil Co., Ltd. Pb-free solder alloy
US20080242063A1 (en) * 2007-03-30 2008-10-02 Mengzhi Pang Solder composition doped with a barrier component and method of making same
DE102007029031A1 (de) * 2007-06-23 2008-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum dauerhaften Verbinden zweier Komponenten durch Löten mit Glas- oder Metalllot
CN101204761A (zh) * 2007-12-12 2008-06-25 株式会社白金 焊料合金及其制造方法
TWI381901B (zh) * 2009-12-15 2013-01-11 Univ Yuan Ze 抑制錫-鎳介金屬於銲點中生成的方法
CN102487049B (zh) * 2010-12-02 2014-10-15 矽品精密工业股份有限公司 半导体基板及其制法
JP5724411B2 (ja) * 2011-01-31 2015-05-27 富士通株式会社 はんだ、はんだ付け方法及び半導体装置
KR101455966B1 (ko) * 2012-06-30 2014-10-31 센주긴조쿠고교 가부시키가이샤 납프리 땜납 볼
CN103056543B (zh) * 2013-01-18 2015-03-25 江苏师范大学 一种含Yb、Al、B的纳米无铅钎料
WO2014129258A1 (ja) * 2013-02-25 2014-08-28 ソニー株式会社 半田組成物、電気接続構造、電気接続部材、プリント配線板および電子回路装置
KR101513494B1 (ko) * 2013-12-04 2015-04-21 엠케이전자 주식회사 무연 솔더, 솔더 페이스트 및 반도체 장치
CN103769764A (zh) * 2014-01-25 2014-05-07 嘉兴斯达半导体股份有限公司 一种软钎焊的焊片和功率模块组装结构
CN104191101B (zh) * 2014-08-15 2016-03-23 郑州机械研究所 一种含钯的少缺欠洁净Sn-Zn钎料及其制备方法
CN112338387B (zh) * 2015-09-17 2022-12-02 富士电机株式会社 半导体装置用软钎焊材料
GB2557439B (en) * 2016-10-24 2021-06-30 Jaguar Land Rover Ltd Apparatus and method relating to electrochemical migration
JP7043225B2 (ja) 2017-11-08 2022-03-29 株式会社東芝 半導体装置
JP2019102772A (ja) * 2017-12-08 2019-06-24 トヨタ自動車株式会社 半導体装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1255455B (de) 1960-12-01 1967-11-30 Siemens Ag Lot zur Verbindung eines Halbleiterkoerpers aus Germanium, Silizium od. dgl. mit einem weiteren Halbleiter- oder Metallkoerper
US3457067A (en) 1966-12-02 1969-07-22 Nat Res Corp Tin base alloys
JPS6155774A (ja) 1984-08-27 1986-03-20 Seiko Epson Corp １チツプマイクロコンピユ−タ
JPS61156823A (ja) 1984-12-28 1986-07-16 Toshiba Corp 半導体装置
JPS62163335A (ja) 1986-01-14 1987-07-20 Toshiba Corp 半導体装置
JPH07121467B2 (ja) * 1986-02-24 1995-12-25 三菱マテリアル株式会社 Ｓｉ半導体素子をＣｕ基合金製リードフレームに少ない残留熱歪ではんだ付けする方法
JPH0292491A (ja) 1988-09-29 1990-04-03 Hirai Netsukuresu Kogyo:Kk 貴金属接合用合金ろう
SU1606295A1 (ru) * 1988-11-09 1990-11-15 Институт Электросварки Им.Е.О.Патона Припой дл пайки никел
JP2891432B2 (ja) 1989-12-27 1999-05-17 田中電子工業株式会社 半導体材料の接続方法，それに用いる接続材料及び半導体装置
JPH04307944A (ja) 1991-04-05 1992-10-30 Tanaka Denshi Kogyo Kk 半導体素子の接続材料および半導体装置
US5147471A (en) 1991-04-08 1992-09-15 Kronberg James W Solder for oxide layer-building metals and alloys
JPH06685A (ja) 1992-06-22 1994-01-11 Nec Corp 半田材
WO1994018350A1 (en) 1993-02-03 1994-08-18 World Metal Co., Ltd. Alloy to be plated, its plating method and plating solution
JPH06269983A (ja) 1993-03-18 1994-09-27 Tokuriki Honten Co Ltd Ａｇ系はんだ
JPH06269981A (ja) 1993-03-18 1994-09-27 Tokuriki Honten Co Ltd Ａｇ系はんだ
US5411703A (en) 1993-06-16 1995-05-02 International Business Machines Corporation Lead-free, tin, antimony, bismtuh, copper solder alloy
US5393489A (en) 1993-06-16 1995-02-28 International Business Machines Corporation High temperature, lead-free, tin based solder composition
JPH08164496A (ja) 1994-10-11 1996-06-25 Hitachi Ltd Ｓｎ−Ｚｎ系、Ｓｎ−Ｚｎ−Ｂｉ系はんだ及びその表面処理方法並びにそれを用いた実装品
JP3441194B2 (ja) * 1994-10-27 2003-08-25 京セラ株式会社 半導体装置及びその製造方法
JP3040929B2 (ja) 1995-02-06 2000-05-15 松下電器産業株式会社 はんだ材料
JPH08215880A (ja) 1995-02-14 1996-08-27 Ishikawa Kinzoku Kk 無鉛はんだ

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US6187114B1 (en) 2001-02-13
MY119338A (en) 2005-05-31
EP0847828A1 (de) 1998-06-17
SG63762A1 (en) 1999-03-30
EP0847828B1 (de) 2001-09-26
CN1186009A (zh) 1998-07-01
JP3226213B2 (ja) 2001-11-05
CN1076998C (zh) 2002-01-02
JPH10118783A (ja) 1998-05-12

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