CN112338387B - 半导体装置用软钎焊材料 - Google Patents
半导体装置用软钎焊材料 Download PDFInfo
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- CN112338387B CN112338387B CN202011222092.XA CN202011222092A CN112338387B CN 112338387 B CN112338387 B CN 112338387B CN 202011222092 A CN202011222092 A CN 202011222092A CN 112338387 B CN112338387 B CN 112338387B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/262—Sn as the principal constituent
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- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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Abstract
本发明涉及半导体装置用软钎焊材料。本发明提供耐热温度高、热传导特性在高温区域中不变的无铅软钎焊材料。一种软钎焊材料,其含有超过5.0质量%且为10.0质量%以下的Sb和2.0~4.0质量%的Ag,余量由Sn和不可避免的杂质构成;以及一种半导体装置,其在半导体元件与基板电极之间或半导体元件与引线框之间具备含有所述软钎焊材料的接合层。
Description
本申请是申请日为2016年8月9日、申请号为201680013332.0、发明名称为半导体装置用软钎焊材料的申请的分案申请。
技术领域
本发明涉及软钎焊材料。本发明尤其涉及用于半导体装置中的接合的、高可靠性的软钎焊材料。
背景技术
近年,由于环境问题,逐渐采用不含铅成分的无Pb软钎焊材料来作为Sn-Pb系软钎焊材料的替代。作为应用于IGBT模块(电源模块)等半导体装置的软钎焊材料,在现在已知的各种组成的无铅软钎焊材料中,大多使用尤其是接合性(软钎焊材料润湿性)、机械特性、传热阻力等方面平衡性相对较好、且也有用于制品的实际成绩的Sn-Ag系的无Pb软钎焊材料。
在具备分层式连接结构、即在散热器上焊接有绝缘基板、进而在其上软钎焊接合有半导体元件的结构的半导体装置中,已知如下的软钎焊接合结构:在下位的接合部使用作为高温系的无铅软钎焊材料的Sn-Sb系软钎焊材料,在上位接合部使用在熔点低于Sn-Sb系软钎焊材料的Sn-Ag系软钎焊材料中添加有Cu等元素的组成的无铅软钎焊材料。例如,参照专利文献1。
另外还已知如下结构:在焊接安装于绝缘基板的半导体元件(IGBT)的上表面面电极上,软钎焊接合兼为散热器的引线框作为布线构件,使半导体元件产生的热逃逸到引线框,从而防止散热密度的集中。例如,参照专利文献2。
作为对防止与半导体元件的散热相伴随的高温裂纹有效的软钎焊材料,已知在温度170℃时具有优异的延展性且冷加工性优异的具备Sn-Sb-Ag组成的带或线状软钎焊材料。例如,参照专利文献3。
现有技术文献
专利文献
专利文献1:日本特开2001-35978号公报
专利文献2:日本特开2005-116702号公报
专利文献3:日本特开平7-284983号公报
发明内容
发明要解决的问题
被称为功率半导体的MOS型、IGBT型的元件在工作时自身散热而温度升高。反复进行散热和冷却的元件通过软钎焊材料而被接合,元件的反复散热使软钎焊材料部反复承受应变而劣化。在高温下动作的半导体元件的接合中,优选使用散热性高的软钎焊材料合金。就作为无Pb软钎焊材料的代表的SnAg系软钎焊材料而言,随着温度而热阻增加、散热特性降低。另外,当在长期施加热循环的功率半导体的接合部使用温度升高则热传导率降低的SnAg系软钎焊材料时,存在一旦施加更大功率则散热变多的情况。
近年,存在对大电流规格的功率半导体的需求日益提高、元件的自身散热量也进一步增大的倾向。另外,车载用功率半导体等需要在超过175℃的使用环境温度中工作的元件也在增加。在这种状况下,逐渐出现相对于元件的可施加的输出功率、软钎焊材料的热传导率低成为电力施加量的限制的情况。在由于自身散热、环境温度而导致温度从室温变为高温时软钎焊材料的热传导率降低这样的情况下,热量难以从芯片逃逸。结果导致芯片的温度进一步上升。现在,为了在元件散热到极其接近软钎焊材料的熔点时也能够使用,使用元件的最大施加电力的要求正在变高。为了满足这些要求,需要高温下的热传导率降低少的软钎焊材料。
用于解决问题的方案
本发明人们进行了深入研究,结果发现,通过在SnAg系软钎焊材料中进一步添加Sb、并且设为特定的组成%范围,能够制成热传导率不随温度上升而降低、并且润湿性等软钎焊材料的接合特性也优异的软钎焊材料,从而完成了本发明。
即,根据一实施方式,本发明为一种软钎焊材料,其含有超过5.0质量%且为10.0质量%以下的Sb和2.0~4.0质量%的Ag,余量由Sn和不可避免的杂质构成。
在上述含有Sb、Ag和Sn的软钎焊材料中,优选进一步含有超过0且1.0质量%以下的Ni。
在上述含有Sb、Ag和Sn的软钎焊材料中,优选进一步含有0.1~0.4质量%的Ni。
在上述含有Sb、Ag和Sn的软钎焊材料中,优选进一步含有超过0且1.0质量%以下的Si。
在上述含有Sb、Ag和Sn的软钎焊材料中,优选进一步含有超过0且0.1质量%以下的V。
在上述含有Sb、Ag和Sn的软钎焊材料中,优选进一步含有超过0且为1.2质量%以下的Cu。
在上述任一软钎焊材料中,优选进一步含有0.001~0.1质量%的P。
在上述任一软钎焊材料中,优选进一步含有0.001~0.1质量%的Ge。
在上述任一软钎焊材料中,优选100℃~200℃下的热传导率与25℃下的热传导率相比不降低。
根据另一实施方式,本发明为一种半导体装置,其在半导体元件与基板电极之间或半导体元件与引线框之间具备由上述任一种软钎焊材料熔融而成的接合层。
在前述半导体装置中,半导体元件优选为SiC半导体元件。
发明的效果
根据本发明的软钎焊材料,热传导率不随着温度上升而降低、优选热传导率随着温度上升而提高。因此,可得到散热特性优异、热疲劳寿命提高的效果。另外,本发明的软钎焊材料的润湿性高,可以将焊接层中的孔隙的产生抑制为较低。本发明的软钎焊材料特别优选用于在材料的熔点的Tr=0.6以上的温度以上使用的粘晶软钎焊材料结合部中。需要说明的是,Tr为使用温度与熔点之比,用Tr=Tm/Tj表示。Tm表示熔点,Tj表示使用温度(单位均为K)。需要说明的是,孔隙是指在焊接层内部和接合界面处产生的空隙。在接合温度下,软钎焊材料与接合构件的润湿性差时,存在在卷入空气等气体或产生凹陷的状态下凝固从而容易产生孔隙的问题,但本发明中,在可以将孔隙的产生抑制为较低方面是有利的。进一步地,本发明的软钎焊材料中还含有规定量的Ge,从而可以防止Sn的氧化、提高润湿性。
另外,将本发明的软钎焊材料形成为接合层的半导体装置的散热特性优异,还适合搭载自身散热多的元件的情况、以及环境温度高的情况下的使用,并且能够实现装置的小型化、低成本化。另外,由于接合层中的孔隙少,因此制品寿命延长。因此可以适宜用于需求日渐增加的大电流规格的电子设备,特别是,可以适宜用于半导体装置中的粘晶(diebond)接合、端子间的接合、其它构件的接合等广泛的半导体装置用途。
附图说明
图1是示出本发明的软钎焊材料作为接合层应用的半导体装置的一例的概念图。
图2是对于本发明的软钎焊材料和比较例的软钎焊材料示出温度与热传导率的关系的图。各温度下的热传导率表示为以25℃下的热传导率为基准的标准值。
图3是对于使用本发明的软钎焊材料和比较例的软钎焊材料的半导体模块示出破坏寿命的标准值和故障概率的关系的图。
图4是示出本发明的软钎焊材料的润湿性试验的结果的照片。
图5是示出本发明的软钎焊材料的热冲击试验的结果的照片。
具体实施方式
以下参照附图来说明本发明的实施方式。但是,本发明不受以下说明的实施方式限定。
[第1实施方式:Sn-Sb-Ag三元体系]
根据第1实施方式,本发明为一种软钎焊材料,其是含有超过5.0质量%且为10.0质量%以下的Sb和2.0~4.0质量%的Ag、余量由Sn和不可避免的杂质构成的合金。不可避免的杂质主要是指Cu、Ni、Zn、Fe、Al、As、Cd、Au、In、P、Pb等。本发明的软钎焊材料为不含Pb的无铅软钎焊材料合金。通过在以Sn为主要成分的软钎焊材料中以上述组成范围来包含Sn、Ag和Sb来确保软钎焊材料的润湿性,这些元素影响到构成软钎焊材料的合金的热扩散路径,将合金的热扩散率抑制为较低,即使温度上升,也可以抑制合金的热传导率的降低。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,余量由Sn和不可避免的杂质构成。通过设为这样的组成范围,在上述的基础上,还可以使合金的热传导率随着温度的上升而上升。
[第2实施方式:Sn-Sb-Ag-Ni四元体系]
根据第2实施方式,本发明为一种软钎焊材料,其含有超过5.0质量%且为10.0质量%以下的Sb、2.0~4.0质量%的Ag和超过0且为1.0质量%以下的Ni,余量由Sn和不可避免的杂质构成。在第1实施方式的组成中进而以上述添加范围添加Ni的优点在于,影响到合金的热扩散路径,使合金的热传导率上升,提高润湿性,形成接合层时可以实现低孔隙率。另外,Ni为高熔点材料,可以增大高温下的强度。设为上述添加量范围的原因尤其在于,与上述添加范围相比更多地添加时,软钎焊材料的熔点超过300℃,为能固溶的范围,抑制软钎焊材料的熔点。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,含有0.01~0.5质量%的Ni,余量由Sn和不可避免的杂质构成。通过设为这样的组成范围,在上述的基础上,还可得到可以使软钎焊材料的熔点降低到260℃以下的优点。
[第3实施方式:Sn-Sb-Ag-Si四元体系]
根据第3实施方式,本发明为一种软钎焊材料,其含有超过5.0质量%且为10.0质量%以下的Sb、2.0~4.0质量%的Ag和超过0且1.0质量%以下的Si,余量由Sn和不可避免的杂质构成。在第1实施方式的组成中进一步添加Si的优点在于,影响到合金的热扩散路径,使合金的热传导率上升,同时提高润湿性,形成接合层时可以实现低孔隙率。另外,Si是高熔点材料,可以增大高温下的强度。设为上述添加量范围的原因尤其在于,Si是难以固溶的,但在该范围内则可以使其固溶。另外,与上述范围相比添加更多的作为高熔点材料的Si时,有时软钎焊材料的熔点变得过高、超过300℃。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,含有0.1~0.4质量%的Si,余量由Sn和不可避免的杂质构成。通过设为这样的组成范围,在上述的基础上,还可得到使软钎焊材料的熔点为260℃以下的优点。
[第4实施方式:Sn-Sb-Ag-Ni-Si五元体系]
根据第4实施方式,本发明为一种软钎焊材料,含有超过5.0质量%且为10.0质量%以下的Sb、2.0~4.0质量%的Ag、超过0且1.0质量%以下的Ni和超过0且为1.0质量%以下的Si,余量由Sn和不可避免的杂质构成。通过设为共存有作为添加元素的Ni和Si的五元体系,可得到界面强度和整体的高温强度增加、即通过Ni和Si的协同效应而高温强度提高的优点。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,含有0.01~0.5质量%的Ni,含有0.1~0.4质量%的Si,余量由Sn和不可避免的杂质构成。
[第5实施方式:Sn-Sb-Ag-V四元体系]
根据第5实施方式,本发明为一种软钎焊材料,其含有超过5.0质量%且为10.0质量%以下的Sb、2.0~4.0质量%的Ag和超过0且为0.1质量%以下的V,余量由Sn和不可避免的杂质构成。在第1实施方式的组成中进一步添加V的优点在于,影响到合金的热扩散路径,使合金的热传导率上升,并且提高润湿性,在形成接合层时可以实现低孔隙率。设为上述添加范围的原因尤其在于,V是高熔点材料,可以增大高温下的强度。与上述范围相比添加更多的作为高熔点材料的V时,有时软钎焊材料的熔点变得过高,例如熔点超过300℃。另外,有固溶变困难之担忧。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,含有0.01~0.08质量%的V,余量由Sn和不可避免的杂质构成。通过设为这样的组成范围,在上述的基础上,与上述范围相比添加更多的作为高熔点材料的V时,虽然有时软钎焊材料的熔点变得过高,但只要在上述范围内就可以将熔点抑制在250℃以下。另外,添加过量的V时则变成氧化物,与金属不融合,因此有时容易产生孔隙。
[第6实施方式:Sn-Sb-Ag-Cu四元体系]
根据第6实施方式,本发明为一种软钎焊材料,其含有超过5.0质量%且为10.0质量%以下的Sb、2.0~4.0质量%的Ag和超过0且为1.2质量%以下的Cu,余量由Sn和不可避免的杂质构成。在第1实施方式的组成中进一步添加Cu的优点在于,影响到合金的热扩散路径,使合金的热传导率上升,并且提高润湿性,在形成接合层时可以实现低孔隙率。设为上述添加范围的原因在于,特别是用于Cu材的接合的情况下,相对于Cu材熔点不提高、熔点对组成不敏感,组成范围宽、成分变动小,因此更有利。原因还在于,在可以防止Cu从Cu板向软钎焊材料的熔入方面更有利。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,含有0.1~0.9质量%的Cu,余量由Sn和不可避免的杂质构成。通过设为这样的组成范围,在上述的基础上,还可得到尤其是润湿性良好的优点。
[第7实施方式:Sn-Sb-Ag-Ge四元体系]
根据第7实施方式,本发明为一种软钎焊材料,其为含有超过5.0质量%且为10.0质量%以下的Sb、2.0~4.0质量%的Ag和0.001~0.1质量%的Ge、余量由Sn和不可避免的杂质构成的合金。在第1实施方式的组成中进一步添加Ge的优点在于,抑制Sn的氧化,大大有助于软钎焊材料的润湿性的提高,和可以影响到合金的热扩散路径。Ge的添加量更优选为0.003~0.05质量%。通过以该范围进行添加,抑制GeO的过量生成而生成合适量的GeO,从而可以抑制难以还原、除去的Sn氧化物。另外,由此可得到孔隙抑制效果。进一步地,优选为0.003质量%以上且不超过0.005质量%的量。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,以上述任一范围含有Ge,余量由Sn和不可避免的杂质构成。通过设为这样的组成范围,在抑制Sn的氧化的同时,可以使合金的热传导率随着温度的上升而上升。
[第8实施方式:Sn-Sb-Ag-Ge-Ni五元体系]
根据第8实施方式,本发明为一种软钎焊材料,其含有超过5.0质量%且为10.0质量%以下的Sb、2.0~4.0质量%的Ag、0.001质量%~0.1质量%的Ge、超过0且1.0质量%以下的Ni,余量由Sn和不可避免的杂质构成。Ni的添加量进一步优选设为0.1~0.4质量%。在第7实施方式的组成中进一步以上述添加范围添加Ni的优点在于,可以在保持Ge的润湿性提高效果的状态下提高界面的软钎焊强度。另外,Ni为高熔点材料,还具有增大高温下的强度的优点。
进一步优选的是,含有6.0质量%~8.0质量%的Sb,含有3.0~4.0质量%的Ag,含有0.01~0.5质量%的Ni,余量由Sn和不可避免的杂质构成。通过设为这样的组成范围,在上述的基础上,还可得到能够将软钎焊材料的熔点降低到260℃以下的优点。
作为进一步的变形方式,可以在第1~第8实施方式的软钎焊材料中添加P,例如可以含有0.001质量%~0.1质量%的P。其理由在于,P具有抑制软钎焊材料氧化的效果,可有助于提高润湿性。还可以在第1~第6实施方式的软钎焊材料中添加Ge来代替P、或者添加P和Ge两者。其理由在于,Ge也具有抑制软钎焊材料氧化的效果,能够影响到合金的热扩散路径。此时的Ge的添加量可以设为0.001~0.1质量%,优选设为0.003~0.02质量%,进一步优选设为0.003以上且不超过0.005质量%的量。在添加Ge、P两者的情况下,可以从上述范围中适宜选择添加量。Ge和P两者都比Sn容易氧化,以该添加范围可以防止Sn的氧化、确保软钎焊材料的润湿性。
上述第1~第8实施方式和它们的变形方式中的任一方式都可以得到具备如下热传导特性的软钎焊材料,所述特性为:100℃~200℃下的热传导率与25℃下的热传导率相比不降低。这里,“100℃~200℃下的热传导率与25℃下的热传导率相比不降低”是指:100℃~200℃内的任意温度下的软钎焊材料的热传导率与25℃下的热传导率相同或更高。在100℃~200℃内的任意温度下满足该条件时,例如在100℃~200℃之间热传导率可以逐渐增加,可以暂时上升后下降,也可以不变。通过具备这样的特性,可以形成适合在高温区域中使用的软钎焊材料。本发明中的软钎焊材料优选热传导率在100℃~200℃几乎单调增加。进一步地,超过25℃且为100℃以内的范围内的任意温度下的软钎焊材料的热传导率也优选与25℃下的软钎焊材料的热传导率相同或更高,在超过25℃且为100℃以下的范围内,热传导率短暂地些许下降的情况也是允许的。例如,本发明的优选范围内也包含具备如下热传导特性的软钎焊材料,所述特性为:温度与热传导率的关系表现为在超过25℃且为100度之间具有优选1个拐点的向下凸出的曲线,在将25℃下的热传导率设为λ25、将拐点处的热传导率设为λIP时,λIP/λ25为0.9以上。任一情况下,热传导率的测定值允许具有10%程度的误差。需要说明的是,热传导率λ可以通过温度斜率法等常规方法以及激光闪射法、热线法等求取热扩散率等的非常规方法来求出。具体而言,热传导率λ可以利用ρ密度、Cp比热和α热扩散率由下式求出。
λ=α·ρ·Cp (式1)
密度可以通过阿基米德法求出,比热可以通过DSC法(差示扫描量热法)求出,热扩散率可以通过激光闪射法求出。需要说明的是,热传导率λ可以基于JIS R1611、R1667、H7801、H8453等来进行测定。
就本发明的软钎焊材料而言,上述第1~第8实施方式和它们的变形方式中的任一种均可以按照常规方法将选自Sn、Sb、Ag和添加元素中的各原料或者含有各原料的母合金在电炉中熔化而制备。各原料优选使用纯度为99.99质量%以上的物质。
另外,第1~第8实施方式和它们的变形方式的软钎焊材料可以加工成板状的预制料形式,或者形成粉末状后与焊剂一起加工成焊膏。在加工成粉末状后与焊剂一起制成焊膏的情况下,作为软钎焊材料粉末的粒径,粒径分布优选在10~100μm的范围,进一步优选在20~50μm的范围。例如,使用常见的激光衍射/散射式粒度分布测定装置测定平均粒径的情况下,平均粒径可以设为25~50μm。作为焊剂,可以使用任意的焊剂,特别是,可以优选使用松香系焊剂。
利用本发明的第1~第8实施方式和它们的变形方式的软钎焊材料的被接合体为至少接合面具备金属构件的一般电子设备构件即可,典型地,为作为电极发挥作用的金属构件,例如,可以为由Cu、Ag、Au、Ni、Fe或者这些的合金构成的电极构件。
本发明的第1~第8实施方式和它们的变形方式的软钎焊材料可以用于例如半导体装置用途。特别是可以用于半导体装置中的粘晶接合用途、端子与端子的接合用途、端子与其它构件的接合用途或者此外的任意接合用途,并非限于所例示的接合用途。特别是,优选用于在高温环境、例如175℃以上的环境中使用的设备中的粘晶接合。作为在175℃以上的高温环境中使用的设备,可以列举例如:变换器、百万瓦级太阳能、燃料电池、升降机、冷却装置、车载用半导体装置等,但并非仅限于这些。特别是,这些设备中,优选用于例如Si与SiC等半导体元件以及珀尔帖元件的接合。需要说明的是,本发明的软钎焊材料具备前述那样的热传导特性,优选热传导率在100℃以上大致单调增加,约在240℃以上熔化。因此,可以优选用于可在该范围的温度条件使用的设备中。
本发明的第1~第8实施方式和它们的变形方式的软钎焊材料在高温下热传导率也不降低,热释放特性优异,因此在搭载有自身散热量大的元件的电子设备构件和/或在高温环境下使用的电子设备构件的粘晶接合中,也可以减少应变的发生等,能够形成长寿且高可靠性的接合层。另外,该软钎焊材料具有高润湿性,可以大大降低接合层中的孔隙率。孔隙的存在有可能引起散热特性降低、局部散热所致的焊接破坏、或在被接合体为Si半导体元件时引起Si熔化,本发明可以大大地降低这种风险。
[第9实施方式:半导体装置]
根据第9实施方式,本发明为一种半导体装置,其在半导体元件与基板电极之间或半导体元件与引线框之间具备前述第1~第8实施方式或者它们的变形方式的软钎焊材料熔融而成的接合层。
图1是作为本实施方式的半导体装置的一例的、电源模块的概念剖视图。电源模块100主要形成在散热板13上介由接合层10接合有半导体元件11和层叠基板12的层叠结构。接合层10是将前述第1~8实施方式或者它们的变形方式的软钎焊材料以规定的接合温度曲线熔融、冷却而形成的。散热板13上粘接有内置外部端子15的壳体16,半导体元件11以及层叠基板12的电极和外部端子15介由铝线14而被连接。模块内部填充有树脂密封材料17。
半导体元件11可以是Si半导体元件或SiC半导体元件,但不限于这些。例如,为搭载于IGBT模块的上述元件时,与层叠基板12的导电性金属板接合的背面电极通常由Au构成。层叠基板12例如在由氧化铝、SiN等形成的陶瓷绝缘层的表面和背面设置有铜、铝的导电性金属板。作为散热板13,使用热传导性优异的铜、铝等金属。本发明的软钎焊材料优选作为这样的半导体元件11的背面电极与层叠基板12的表面的导电性金属板之间的接合层10的材料、以及层叠基板12的背面导电性金属板与散热板13之间的接合层10的材料使用。这样的接合层10的形成中所使用的软钎焊材料的厚度、形状等可以由本领域技术人员根据目的和用途适宜设定,没有特别限制。但是,本发明的软钎焊材料与现有技术相比润湿性好、不易形成孔隙,因此可以设为较薄。薄则热阻也降低,这在半导体装置中是优选的。另一方面,半导体元件11的芯片翘曲时,则需要与翘曲量相应的厚度。此时容易形成孔隙,但润湿性良好则可以防止空隙所致的孔隙。另外,厚则具有应力缓和效果,寿命也长。由此,可以薄也可以厚,设计的自由度提高。
需要说明的是,本实施方式所示出的半导体装置为一例,本发明的半导体装置不限于具备图示的装置构成的装置。例如,在由本申请人提出的专利文献2所公开的具备引线框的半导体装置构成中,引线框与半导体元件的接合中也可以使用本发明的软钎焊材料。或者,在具备由本申请人提出的日本特开2012-191010号公报所公开的构成的半导体装置中,铜块与半导体元件的接合中也可以使用本发明的软钎焊材料。另外,除了这样的粘晶接合用途以外,在端子与端子的接合以及半导体元件与端子的接合等半导体装置内的软钎焊接合部中,也可以使用本发明的软钎焊材料。
实施例
(1)热传导率和润湿性的测定
制备本发明的软钎焊材料和比较例的软钎焊材料,测定热传导率和润湿性。通过阿基米德法求出密度,通过DSC法求出比热,通过激光闪射法求出热扩散率,利用前述式1求出软钎焊材料的热传导率。其中,测定值具有10%左右的误差。关于各组成的试样,在25℃、100℃、150℃、175℃、200℃测定热传导率,将满足100℃、150℃、175℃、200℃这些温度下的软钎焊材料的热传导率与25℃下的软钎焊材料的热传导率相同或更高的条件者设为“Y(yes)”,不满足者设为“N(no)”。
润湿性测定的试样如下制作:将9mm见方的Si芯片和层叠基板12的导电性金属板(铜)按照接合层厚度110μm的方式用本发明的软钎焊材料和比较例的软钎焊材料进行接合,从而制作。接合通过在软钎焊材料的熔融温度、即液相线温度+30℃保持2分钟而实施。通过超声波探伤(SAT:Scanning Acoustic Tomography)观察该焊接部,将芯片的面积设为100%,由SAT透射图像算出孔隙率。将相对于芯片面积具有1.5%以下的孔隙率者记作有润湿性“Y(yes)”,将显示超过1.5%的孔隙率者记作无润湿性“N(no)”。将结果示于下述表1。需要说明的是,虽然未附上详细数据,但本发明人们通过Wilhelm法测定了Sn-Ag系软钎焊材料的Ag量和表面张力的关系。Wilhelm法测定结果显示,在Sn-Ag 3.5质量%附近、特别是Sn-Ag 3.0质量%~Sn-Ag 4.0质量%时表面张力变为最小。该结果与本实施例的孔隙率测定结果也一致。因此表明,对于降低孔隙率而言,减小表面张力的手段是有效的。就软钎焊材料的润湿性而言,可以说表面张力极小能够减小接触角,显示与母材(被接合构件)的高润湿性。
[表1]
上述表中,试样编号1~7、24为比较例,其余的试样为实施例。
作为软钎焊材料,通常使用SnAg系材料,但SnAg的热传导率或SnAgCu系合金的热传导率随着温度上升而降低。需要说明的是,前述热传导率的数据在表中未示出。另一方面,SnSb系材料中,Sn-5Sb显示出Sb固溶效果,但βSn的影响强,显示出随着温度上升、热传导率相对于初始的热传导率降低若干的倾向。需要说明的是,未示出详细的数据。另一方面,Sn6Sb4Ag共晶显示出随着温度上升、热传导率提高的倾向。当在Sn中添加13质量%的Sb时,润湿性降低。我们认为,这是由于析出了SbSn和Sb2Sn。虽然热传导率具有随着温度上升相对于初始变高的倾向,但在Sn中添加8质量%以上的Sb时,不论Ag量等如何,热传导率不变。
图2示出本发明的代表性软钎焊材料、比较例的软钎焊材料的温度与热传导率的关系。热传导率以将25℃下的热传导率作为基准的标准值来表示。由图示的标准值可以理解,在25℃至200℃范围内,作为本发明软钎焊材料的试样编号8、9、13、20的热传导率与25℃时相比是上升的。另一方面,比较例的任一软钎焊材料都观察到随着温度上升、热传导率明显降低。
热传导的机制认为有以下2种。
1.在晶格间传导的振动(声子、晶格振动)形式的能量转移
2.基于传导电子的能量转移
通常认为,对金属和合金而言,传导电子的帮助更大。因此,温度上升时,电子无序化变剧烈,传导电子性降低,热传导率也降低。而构成本发明的软钎焊材料的合金在规定温度范围内晶格振动帮助更大。即,温度上升时,晶格振动变得剧烈,电子无序化也变得剧烈。但是推测,如果热传导大大依赖于晶格振动,则即使传导电子的帮助降低,也能够通过基于晶格振动的能量转移,从而热传导率上升。需要说明的是,所述说明不过是用于理解本发明的解释而已,本发明不受上述特定理论限定。
(2)功率循环试验
使用作为本发明的三元体系的软钎焊材料的SnSbAg系材料和作为比较例的软钎焊材料的SnAg系材料,制作具备图1的构成的电源模块。对于这些电源模块,按照达到相同的散热温度的方式,将ΔTj=100℃、Tjmax=175℃下运转2秒、终止9秒的条件作为1个循环,进行功率循环试验。将结果示于图3。破坏寿命是以比较例为基准而标准化地表示的循环次数。纵轴的故障概率为:对20台电源模块进行功率循环试验时、因软钎焊材料损伤而产生故障的电源模块的比例。图3是描绘规定故障概率时的循环次数的图。软钎焊材料损伤所致的故障的判断基准根据元件的热阻值的变化来进行。对元件的热阻的变化率进行监视,时常确认热阻的变化率,将热阻逐渐上升者作为软钎焊材料损伤。另外,为了排除用于元件通电的引线接合连接部的破坏、元件劣化所致的破坏,对于热阻上升、无法施加元件的额定电流者,通过观察剖面来确认软钎焊材料组织的劣化情况,对于发生软钎焊材料损伤者,作为故障而进行计数。
在功率循环试验等施加电流而使元件散热、在散热温度的上下限反复进行电流切断和接通的试验方法中,散热使接合层产生应变,通过反复进行数十万次循环而使软钎焊材料劣化,直至元件被破坏。在该功率循环试验中,初始时,软钎焊材料显示金属的微细的组织形态,但有时会由于劣化而发生化合物析出、凝聚、粗大化。存在粗大的化合物这种情况,一方面是指βSn的位错、化合物少的组织增多的情况,也可能表示接近纯金属的行为、引起热传导率的变化。本试验的结果表明,本发明的软钎焊材料与现有技术的软钎焊材料相比,制品寿命延长。虽然并非意在通过特定理论限定本发明,但推测其原因在于,本发明的SnSbAg系材料中同时具有SnSb的固溶和SnAg的析出强化两者。
(3)润湿性试验
在DCB(Direct Copper Bonding)基板上载置9.5mm见方、厚度为0.25mm的板状软钎焊材料,在H2还原环境、300℃下加热3分钟,由此确认软钎焊材料在Cu板上的润湿性。需要说明的是,DCB基板是指在氧化铝系陶瓷等的绝缘层的两面通过直接覆铜(DirectCopper Bond)法直接接合铜等导电性金属板而成的层叠基板。板状软钎焊材料的组成使用了表1的试样编号9、19、23的软钎焊材料。关于各板状软钎焊材料,将2片各试样载置于DCB基板而进行实验。
将结果示于图4。图4为加热后的DCB基板上的软钎焊材料的实体显微镜照片。可以观察到,本发明的软钎焊材料均具备良好的润湿性,但与试样编号9的软钎焊材料相比,试样编号19和试样编号23的软钎焊材料由于添加有Ge,从而进一步抑制了软钎焊材料的氧化、提高了软钎焊材料的润湿性。可知:试样编号19的软钎焊材料显示出与熔融前的形状基本相同的润湿扩展,软钎焊材料的颜色接近白色,Sn未被氧化。试样编号23的润湿性同样稍微提高,至少未观察到Ni的添加导致润湿性恶化等。需要说明的是,照片中虽然不易看到,但试样编号19和试样编号23的照片中,软钎焊材料扩展至以四边形示出框线的区域的几乎整体。
(4)耐热性试验
使用具有表1的试样编号5、9、13的组成的厚度为0.25mm的板状软钎焊材料,在与上述(3)同样的接合条件下将DCB基板和散热板接合。实施热冲击试验来作为软钎焊材料耐热性评价。试验条件如下:在-45℃和155℃各保持10分钟,将-45℃保持10分钟和155℃保持10分钟作为1个循环进行计数,实施300个循环。然后,通过超声探伤显微镜确认焊接部的剥离或裂纹的产生。将结果的显微镜照片示于图5。(a)为使用试样编号5、(b)为使用试样编号9、(c)为使用试样编号13的软钎焊材料的试样的照片。图中所示的黑色部分为焊接部,变白的部分为裂纹、即发生焊接破坏的部位。关于裂纹判定,白色部位相对于虚线框所示的初始焊接面积多者表明冷却性能降低、焊接强度下降。即,白色部位越少则表示特性越优异。需要说明的是,各试样中,在前述显微镜照片的中央部等处可见的白色斑点是试验前即存在的孔隙,不是由于前述热冲击试验而导致焊接破坏的位置。前述热冲击试验的结果显示,按照试样编号13、9、5的顺序,耐热性逐渐优异,Ni的添加使寿命延长。
我们认为,在SnSbAg中添加Ni时,其成为SnSbAg组织凝固时的凝固核,从而形成微细的多晶体。因此,冷热循环所引起的应力集中不会集中在结晶方向不同的大角度晶界处,多晶体发挥了分散应力的效果。另外认为,凝固时析出的SbSnNi相和CuNiSn相发挥了如下效果:在SbSn相中的分散强化引起的劣化延迟和使高温劣化引起的化合物和主相Sn相的粗大化延迟。需要说明的是,所述说明不过是用于理解本发明的解释而已,本发明不受上述特定的理论限定。
产业上的可利用性
本发明的软钎焊材料用于全部大电流规格的电子设备、半导体芯片等的接合部。特别适宜用于IC等封装部件。另外,适宜用于散热多的部件、例如LED元件以及功率二极管等功率半导体器件的粘晶接合部,进而还适宜用于印刷线路板等中所搭载的全部电子部件中的IC元件等的内部连接的粘晶接合部。
附图标记说明
10 接合层
11 半导体元件
12 层叠基板
13 散热板
14 铝线
15 外部端子
16 壳体
17 树脂密封材料
100 电源模块
Claims (14)
1.一种软钎焊材料,其含有超过5.0质量%且为8.0质量%以下的Sb、2.0~4.0质量%的Ag和选自超过0且为1.0质量%以下的Si、超过0且为0.1质量%以下的V、0.001~0.1质量%的Ge、或0.001质量%~0.1质量%的P中的1种元素,余量由Sn和不可避免的杂质构成,
所述软钎焊材料在100℃~200℃下的热传导率与25℃下的热传导率相比不降低。
2.根据权利要求1所述的软钎焊材料,其中,含有0.1~0.4质量%的所述Si。
3.根据权利要求1所述的软钎焊材料,其中,含有0.01~0.08质量%的所述V。
4.根据权利要求1所述的软钎焊材料,其中,含有0.001~0.1质量%的所述Ge。
5.根据权利要求1所述的软钎焊材料,其中,含有0.001~0.1质量%的所述P。
6.根据权利要求2所述的软钎焊材料,其中,还含有0.001~0.1质量%的所述P。
7.根据权利要求3所述的软钎焊材料,其中,还含有0.001~0.1质量%的所述P。
8.根据权利要求4所述的软钎焊材料,其中,还含有0.001~0.1质量%的所述P。
9.根据权利要求2所述的软钎焊材料,其中,还含有0.001~0.1质量%的所述Ge。
10.根据权利要求3所述的软钎焊材料,其中,还含有0.001~0.1质量%的所述Ge。
11.根据权利要求6所述的软钎焊材料,其中,还含有0.001~0.1质量%的所述Ge。
12.根据权利要求7所述的软钎焊材料,其中,还含有0.001~0.1质量%的所述Ge。
13.一种半导体装置,其在半导体元件与基板电极之间或半导体元件与引线框之间具备由权利要求1~12中任一项所述的软钎焊材料熔融而成的接合层。
14.根据权利要求13所述的半导体装置,其中,所述半导体元件为SiC半导体元件。
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