JP4635715B2 - はんだ合金およびそれを用いた半導体装置 - Google Patents
はんだ合金およびそれを用いた半導体装置 Download PDFInfo
- Publication number
- JP4635715B2 JP4635715B2 JP2005148730A JP2005148730A JP4635715B2 JP 4635715 B2 JP4635715 B2 JP 4635715B2 JP 2005148730 A JP2005148730 A JP 2005148730A JP 2005148730 A JP2005148730 A JP 2005148730A JP 4635715 B2 JP4635715 B2 JP 4635715B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- solder alloy
- antimony
- tin
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910000679 solder Inorganic materials 0.000 title claims description 77
- 229910045601 alloy Inorganic materials 0.000 title claims description 69
- 239000000956 alloy Substances 0.000 title claims description 69
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 39
- 229910052787 antimony Inorganic materials 0.000 claims description 38
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 33
- 229910052732 germanium Inorganic materials 0.000 claims description 30
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 30
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 28
- 239000000919 ceramic Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Description
アンチモン(Sb)を5.0重量%とし、ゲルマニウム(Ge)の添加量を0.01〜0.2重量%まで4段階で変え、残りをスズ(Sn)とした組成を有するスズ(Sn)−アンチモン(Sb)系はんだ合金を調製した。ゲルマニウム(Ge)の添加量を、実施例1では0.01重量%とし、実施例2では0.05重量%とし、実施例3では0.1重量%とし、実施例4では0.2重量%とした。
アンチモン(Sb)を3.0重量%とし、ゲルマニウム(Ge)の添加量を0.01〜0.2重量%まで4段階で変え、残りをスズ(Sn)とした組成を有するスズ(Sn)−アンチモン(Sb)系はんだ合金を調製した。ゲルマニウム(Ge)の添加量を、実施例5では0.01重量%とし、実施例6では0.05重量%とし、実施例7では0.1重量%とし、実施例8では0.2重量%とした。
比較として、ゲルマニウム(Ge)を含まないはんだ合金を調製した。アンチモン(Sb)の添加量を、比較例1では6.0重量%とし、比較例2では5.0重量%とし、比較例3では3.0重量%とし、比較例4では2.0重量%とし、いずれも残りをスズ(Sn)とした。
2,3 導体パターン
4 半導体チップ
5,7,9 はんだ合金
6 配線用導体
8 放熱板
10 絶縁基板
Claims (5)
- 3重量%以上5重量%以下のアンチモンと0.01重量%以上0.2重量%以下のゲルマニウムを含有し、残りがスズであることを特徴とするはんだ合金。
- 両面に導体パターンが形成された絶縁基板と、該絶縁基板のおもて面の導体パターンに接合された半導体チップと、前記絶縁基板の裏面の導体パターンに接合された放熱板とを備え、前記絶縁基板の裏面の導体パターンと前記放熱板との間が、3重量%以上5重量%以下のアンチモンと0.01重量%以上0.2重量%以下のゲルマニウムを含有し、かつ残りがスズであるはんだ合金によりはんだ接合されていることを特徴とするはんだ合金を用いた半導体装置。
- 半導体チップの裏面と、絶縁基板のおもて面の導体パターンとの間が、3重量%以上5重量%以下のアンチモンと0.01重量%以上0.2重量%以下のゲルマニウムを含有し、かつ残りがスズであるはんだ合金によりはんだ接合されていることを特徴とする請求項2に記載のはんだ合金を用いた半導体装置。
- 半導体チップの表面に設けられた電極と、配線用導体が、3重量%以上5重量%以下のアンチモンと0.01重量%以上0.2重量%以下のゲルマニウムを含有し、かつ残りがスズであるはんだ合金によりはんだ接合されていることを特徴とする請求項2または3に記載のはんだ合金を用いた半導体装置。
- 前記絶縁基板は、アルミナ、窒化アルミまたは窒化珪素のいずれかを主剤とするセラミック基板の両面に銅パターンが接合されたものであり、前記放熱板は銅であることを特徴とする請求項2〜4のいずれか一つに記載のはんだ合金を用いた半導体装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005148730A JP4635715B2 (ja) | 2005-05-20 | 2005-05-20 | はんだ合金およびそれを用いた半導体装置 |
GB0601776A GB2426251B (en) | 2005-05-20 | 2006-01-30 | Solder alloy and a semiconductor device using the solder alloy |
US11/345,516 US20060263235A1 (en) | 2005-05-20 | 2006-02-02 | Solder alloy and a semiconductor device using the solder alloy |
DE102006005271A DE102006005271B4 (de) | 2005-05-20 | 2006-02-06 | Halbleitervorrichtung unter Verwendung einer Lötlegierung und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN201210102888.0A CN102637662B (zh) | 2005-05-20 | 2006-02-28 | 使用焊料合金的半导体装置 |
CN2010102407673A CN101905388B (zh) | 2005-05-20 | 2006-02-28 | 一种制造半导体装置的方法 |
CN2006100515427A CN1864909B (zh) | 2005-05-20 | 2006-02-28 | 焊料合金和使用该焊料合金的半导体装置 |
US12/213,923 US7816249B2 (en) | 2005-05-20 | 2008-06-26 | Method for producing a semiconductor device using a solder alloy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005148730A JP4635715B2 (ja) | 2005-05-20 | 2005-05-20 | はんだ合金およびそれを用いた半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006320955A JP2006320955A (ja) | 2006-11-30 |
JP4635715B2 true JP4635715B2 (ja) | 2011-02-23 |
Family
ID=36061073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005148730A Active JP4635715B2 (ja) | 2005-05-20 | 2005-05-20 | はんだ合金およびそれを用いた半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060263235A1 (ja) |
JP (1) | JP4635715B2 (ja) |
CN (3) | CN101905388B (ja) |
DE (1) | DE102006005271B4 (ja) |
GB (1) | GB2426251B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008221330A (ja) * | 2007-03-16 | 2008-09-25 | Fuji Electric Holdings Co Ltd | はんだ合金 |
KR101163329B1 (ko) * | 2008-02-22 | 2012-07-05 | 가부시키가이샤 고베 세이코쇼 | 터치 패널 센서 |
JP2009283741A (ja) * | 2008-05-23 | 2009-12-03 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
TWI541488B (zh) * | 2011-08-29 | 2016-07-11 | 奇鋐科技股份有限公司 | 散熱裝置及其製造方法 |
CN102717201B (zh) * | 2012-07-04 | 2015-04-22 | 深圳市斯特纳新材料有限公司 | 具有耐腐蚀的高强度高温焊料 |
US9764430B2 (en) * | 2014-02-24 | 2017-09-19 | Koki Company Limited | Lead-free solder alloy, solder material and joined structure |
CN108428682B (zh) * | 2018-04-13 | 2020-08-18 | 江西江铃集团新能源汽车有限公司 | 一种功率模组及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09330941A (ja) * | 1996-06-13 | 1997-12-22 | Toshiba Corp | 高熱伝導ペースト半田および半導体デバイス |
JP2002232022A (ja) * | 2001-01-31 | 2002-08-16 | Aisin Seiki Co Ltd | 熱電モジュール及びその製造方法 |
JP2003094194A (ja) * | 2001-07-16 | 2003-04-02 | Uchihashi Estec Co Ltd | はんだ材及び電子部品における部材の固定方法 |
JP2004001100A (ja) * | 2001-06-28 | 2004-01-08 | Senju Metal Ind Co Ltd | 鉛フリーはんだ合金 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62230493A (ja) * | 1986-03-31 | 1987-10-09 | Taruchin Kk | はんだ合金 |
JP3269745B2 (ja) * | 1995-01-17 | 2002-04-02 | 株式会社日立製作所 | モジュール型半導体装置 |
JP3226213B2 (ja) * | 1996-10-17 | 2001-11-05 | 松下電器産業株式会社 | 半田材料及びそれを用いた電子部品 |
US6033488A (en) * | 1996-11-05 | 2000-03-07 | Samsung Electronics Co., Ltd. | Solder alloy |
KR19980068127A (ko) * | 1997-02-15 | 1998-10-15 | 김광호 | 납땜용 무연 합금 |
JP3353662B2 (ja) * | 1997-08-07 | 2002-12-03 | 富士電機株式会社 | はんだ合金 |
US6179935B1 (en) * | 1997-04-16 | 2001-01-30 | Fuji Electric Co., Ltd. | Solder alloys |
CA2340393A1 (en) * | 1999-06-11 | 2000-12-21 | Katsuaki Suganuma | Lead-free solder |
JP2002321084A (ja) * | 2001-04-26 | 2002-11-05 | Sumitomo Metal Mining Co Ltd | 電子部品接合用はんだ合金 |
US20030178719A1 (en) * | 2002-03-22 | 2003-09-25 | Combs Edward G. | Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package |
JP2004017093A (ja) * | 2002-06-17 | 2004-01-22 | Toshiba Corp | 鉛フリーはんだ合金、及びこれを用いた鉛フリーはんだペースト |
CN1230567C (zh) * | 2003-07-02 | 2005-12-07 | 中国科学院金属研究所 | 一种抗液态表面氧化的工业纯锡及其应用 |
-
2005
- 2005-05-20 JP JP2005148730A patent/JP4635715B2/ja active Active
-
2006
- 2006-01-30 GB GB0601776A patent/GB2426251B/en not_active Expired - Fee Related
- 2006-02-02 US US11/345,516 patent/US20060263235A1/en not_active Abandoned
- 2006-02-06 DE DE102006005271A patent/DE102006005271B4/de active Active
- 2006-02-28 CN CN2010102407673A patent/CN101905388B/zh active Active
- 2006-02-28 CN CN2006100515427A patent/CN1864909B/zh active Active
- 2006-02-28 CN CN201210102888.0A patent/CN102637662B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09330941A (ja) * | 1996-06-13 | 1997-12-22 | Toshiba Corp | 高熱伝導ペースト半田および半導体デバイス |
JP2002232022A (ja) * | 2001-01-31 | 2002-08-16 | Aisin Seiki Co Ltd | 熱電モジュール及びその製造方法 |
JP2004001100A (ja) * | 2001-06-28 | 2004-01-08 | Senju Metal Ind Co Ltd | 鉛フリーはんだ合金 |
JP2003094194A (ja) * | 2001-07-16 | 2003-04-02 | Uchihashi Estec Co Ltd | はんだ材及び電子部品における部材の固定方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101905388B (zh) | 2012-05-30 |
DE102006005271B4 (de) | 2012-12-06 |
GB2426251B (en) | 2007-10-10 |
CN102637662A (zh) | 2012-08-15 |
CN102637662B (zh) | 2014-09-24 |
JP2006320955A (ja) | 2006-11-30 |
CN101905388A (zh) | 2010-12-08 |
CN1864909A (zh) | 2006-11-22 |
CN1864909B (zh) | 2012-05-30 |
GB0601776D0 (en) | 2006-03-08 |
DE102006005271A1 (de) | 2006-11-23 |
GB2426251A (en) | 2006-11-22 |
US20060263235A1 (en) | 2006-11-23 |
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