DE69703902T2 - Strahlungsempfindliche Zusammensetzung - Google Patents

Strahlungsempfindliche Zusammensetzung

Info

Publication number
DE69703902T2
DE69703902T2 DE69703902T DE69703902T DE69703902T2 DE 69703902 T2 DE69703902 T2 DE 69703902T2 DE 69703902 T DE69703902 T DE 69703902T DE 69703902 T DE69703902 T DE 69703902T DE 69703902 T2 DE69703902 T2 DE 69703902T2
Authority
DE
Germany
Prior art keywords
radiation sensitive
sensitive composition
composition
radiation
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69703902T
Other languages
English (en)
Other versions
DE69703902D1 (de
Inventor
Shinichiro Iwanaga
Akihiko Sakurai
Takayoshi Tanabe
Akira Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE69703902D1 publication Critical patent/DE69703902D1/de
Application granted granted Critical
Publication of DE69703902T2 publication Critical patent/DE69703902T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
DE69703902T 1996-03-01 1997-02-28 Strahlungsempfindliche Zusammensetzung Expired - Lifetime DE69703902T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4447696 1996-03-01

Publications (2)

Publication Number Publication Date
DE69703902D1 DE69703902D1 (de) 2001-02-22
DE69703902T2 true DE69703902T2 (de) 2001-06-13

Family

ID=12692589

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703902T Expired - Lifetime DE69703902T2 (de) 1996-03-01 1997-02-28 Strahlungsempfindliche Zusammensetzung

Country Status (4)

Country Link
US (1) US5962180A (de)
EP (1) EP0793144B1 (de)
KR (1) KR100456254B1 (de)
DE (1) DE69703902T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6187504B1 (en) * 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
JP3873372B2 (ja) * 1997-05-26 2007-01-24 住友化学株式会社 ポジ型フォトレジスト組成物
KR100533402B1 (ko) * 1998-04-14 2005-12-02 후지 샤신 필름 가부시기가이샤 포지티브 감광성 조성물
DE69915928T2 (de) * 1998-05-19 2005-04-14 Jsr Corp. Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung
EP1108237A1 (de) * 1998-08-18 2001-06-20 3M Innovative Properties Company Polymere mit silierten acetal- oder ketalgruppen
JP3985359B2 (ja) * 1998-09-18 2007-10-03 住友化学株式会社 レジスト組成物
GB2342459B (en) * 1998-10-07 2003-01-15 Horsell Graphic Ind Ltd Improvements in relation to electronic parts
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
JP3348040B2 (ja) 1999-06-04 2002-11-20 群栄化学工業株式会社 ノボラック型フェノール樹脂
JP3294233B2 (ja) 1999-06-04 2002-06-24 群栄化学工業株式会社 フェノール樹脂
KR100308423B1 (ko) * 1999-09-07 2001-09-26 주식회사 동진쎄미켐 화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트 조성물
US6537724B1 (en) 1999-11-02 2003-03-25 Hyundai Electronics Industries Co., Ltd. Photoresist composition for resist flow process, and process for forming contact hole using the same
JP3779122B2 (ja) * 2000-03-14 2006-05-24 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP3433153B2 (ja) * 2000-03-22 2003-08-04 株式会社東芝 パターン形成材料、パターン形成方法、及び露光用マスクの製造方法
KR100533362B1 (ko) * 2000-04-19 2005-12-06 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 조성물 및 이를이용한 콘택홀의 형성방법
US6692883B2 (en) * 2000-04-21 2004-02-17 Fuji Photo Film Co., Ltd. Positive photoresist composition
TWI253543B (en) * 2000-07-19 2006-04-21 Shinetsu Chemical Co Chemically amplified positive resist composition
US6514664B1 (en) * 2000-07-20 2003-02-04 Arch Specialty Chemicals, Inc. Radiation sensitive compositions containing image quality and profile enhancement additives
JP4023318B2 (ja) * 2000-08-30 2007-12-19 和光純薬工業株式会社 スルホニウム塩化合物
US6855480B2 (en) 2001-04-19 2005-02-15 Shipley Company, L.L.C. Photoresist composition
JP3988517B2 (ja) * 2001-04-27 2007-10-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
CN104460232B (zh) * 2013-09-24 2019-11-15 住友化学株式会社 光致抗蚀剂组合物
KR102128536B1 (ko) * 2017-07-04 2020-06-30 주식회사 엘지화학 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2578646B2 (ja) * 1988-07-18 1997-02-05 三洋電機株式会社 非水系二次電池
JPH02161436A (ja) * 1988-12-15 1990-06-21 Oki Electric Ind Co Ltd フォトレジスト組成物及びその使用方法
JPH0344290A (ja) * 1989-07-12 1991-02-26 Fujitsu Ltd チップパーティ接地送出方法
JP2881969B2 (ja) * 1990-06-05 1999-04-12 富士通株式会社 放射線感光レジストとパターン形成方法
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
US5332650A (en) * 1991-09-06 1994-07-26 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
DE69218393T2 (de) * 1991-12-16 1997-10-16 Wako Pure Chem Ind Ltd Resistmaterial
TW288112B (de) * 1993-06-02 1996-10-11 Sumitomo Chemical Co
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material

Also Published As

Publication number Publication date
KR970066718A (ko) 1997-10-13
EP0793144B1 (de) 2001-01-17
DE69703902D1 (de) 2001-02-22
EP0793144A3 (de) 1998-05-06
EP0793144A2 (de) 1997-09-03
KR100456254B1 (ko) 2005-01-15
US5962180A (en) 1999-10-05

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: JSR CORP., TOKIO/TOKYO, JP

8364 No opposition during term of opposition