DE69536143D1 - Speicherzelle und Wortleitungtreiber für einen eingebetteten DRAM-Speicher im ASIC-Herstellungsverfahren - Google Patents

Speicherzelle und Wortleitungtreiber für einen eingebetteten DRAM-Speicher im ASIC-Herstellungsverfahren

Info

Publication number
DE69536143D1
DE69536143D1 DE69536143T DE69536143T DE69536143D1 DE 69536143 D1 DE69536143 D1 DE 69536143D1 DE 69536143 T DE69536143 T DE 69536143T DE 69536143 T DE69536143 T DE 69536143T DE 69536143 D1 DE69536143 D1 DE 69536143D1
Authority
DE
Germany
Prior art keywords
manufacturing process
word line
line driver
embedded dram
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69536143T
Other languages
English (en)
Inventor
Karl Skjaveland
Peter B Gillingham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OL Security LLC
Original Assignee
Trace Step Holdings LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trace Step Holdings LLC filed Critical Trace Step Holdings LLC
Application granted granted Critical
Publication of DE69536143D1 publication Critical patent/DE69536143D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69536143T 1994-12-14 1995-12-08 Speicherzelle und Wortleitungtreiber für einen eingebetteten DRAM-Speicher im ASIC-Herstellungsverfahren Expired - Lifetime DE69536143D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/355,956 US5600598A (en) 1994-12-14 1994-12-14 Memory cell and wordline driver for embedded DRAM in ASIC process

Publications (1)

Publication Number Publication Date
DE69536143D1 true DE69536143D1 (de) 2011-04-07

Family

ID=23399483

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69531090T Expired - Lifetime DE69531090T2 (de) 1994-12-14 1995-12-08 Speicherzelle und Wortleitungstreiber für ASIC-hergestellten integrierten DRAM-Speicher
DE69536143T Expired - Lifetime DE69536143D1 (de) 1994-12-14 1995-12-08 Speicherzelle und Wortleitungtreiber für einen eingebetteten DRAM-Speicher im ASIC-Herstellungsverfahren

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69531090T Expired - Lifetime DE69531090T2 (de) 1994-12-14 1995-12-08 Speicherzelle und Wortleitungstreiber für ASIC-hergestellten integrierten DRAM-Speicher

Country Status (4)

Country Link
US (2) US5600598A (de)
EP (2) EP1336970B1 (de)
JP (1) JP3182067B2 (de)
DE (2) DE69531090T2 (de)

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US5999440A (en) * 1998-03-30 1999-12-07 Lsi Logic Corporation Embedded DRAM with noise-protecting substrate isolation well
US5973952A (en) * 1998-03-30 1999-10-26 Lsi Logic Corporation Embedded DRAM with noise protecting shielding conductor
US6005824A (en) * 1998-06-30 1999-12-21 Lsi Logic Corporation Inherently compensated clocking circuit for dynamic random access memory
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US6075720A (en) * 1998-08-14 2000-06-13 Monolithic System Tech Inc Memory cell for DRAM embedded in logic
US6509595B1 (en) 1999-06-14 2003-01-21 Monolithic System Technology, Inc. DRAM cell fabricated using a modified logic process and method for operating same
US6087690A (en) * 1998-10-13 2000-07-11 Worldwide Semiconductor Manufacturing Corporation Single polysilicon DRAM cell with current gain
US6136638A (en) 1998-11-19 2000-10-24 Taiwan Semiconductor Manufacturing Company Process technology architecture of embedded DRAM
US6177340B1 (en) 1999-02-18 2001-01-23 Taiwan Semiconductor Manufacturing Company Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structure
JP2000349172A (ja) * 1999-02-26 2000-12-15 Sony Corp 半導体メモリセル
JP3506633B2 (ja) * 1999-04-09 2004-03-15 沖電気工業株式会社 半導体装置
US6219270B1 (en) * 1999-05-24 2001-04-17 U.S. Philips Corporation Integrated circuit having dynamic memory with boosted plateline
US6841821B2 (en) * 1999-10-07 2005-01-11 Monolithic System Technology, Inc. Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same
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US7042848B2 (en) * 2001-05-04 2006-05-09 Slt Logic Llc System and method for hierarchical policing of flows and subflows of a data stream
JP2003257178A (ja) * 2002-03-06 2003-09-12 Matsushita Electric Ind Co Ltd 半導体メモリ装置
JP4323749B2 (ja) * 2002-03-25 2009-09-02 パナソニック株式会社 ダイナミックランダムアクセスメモリ
US20110026323A1 (en) 2009-07-30 2011-02-03 International Business Machines Corporation Gated Diode Memory Cells
US8445946B2 (en) * 2003-12-11 2013-05-21 International Business Machines Corporation Gated diode memory cells
US7341765B2 (en) * 2004-01-27 2008-03-11 Battelle Energy Alliance, Llc Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates
US7323379B2 (en) * 2005-02-03 2008-01-29 Mosys, Inc. Fabrication process for increased capacitance in an embedded DRAM memory
US20070170489A1 (en) * 2006-01-26 2007-07-26 Fang Gang-Feng Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process
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JP5352077B2 (ja) 2007-11-12 2013-11-27 ルネサスエレクトロニクス株式会社 半導体集積回路
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US7929359B2 (en) * 2008-11-13 2011-04-19 Mosys, Inc. Embedded DRAM with bias-independent capacitance
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Also Published As

Publication number Publication date
JPH08264730A (ja) 1996-10-11
JP3182067B2 (ja) 2001-07-03
EP1336970B1 (de) 2011-02-23
DE69531090T2 (de) 2004-05-13
EP0717413B1 (de) 2003-06-18
DE69531090D1 (de) 2003-07-24
EP0717413A3 (de) 1999-01-07
EP1336970A3 (de) 2005-01-05
EP0717413A2 (de) 1996-06-19
US5694355A (en) 1997-12-02
EP1336970A2 (de) 2003-08-20
US5600598A (en) 1997-02-04

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