DE69525558T2 - Methode zur Herstellung eines Dünnfilm-Transistors mit invertierter Struktur - Google Patents
Methode zur Herstellung eines Dünnfilm-Transistors mit invertierter StrukturInfo
- Publication number
- DE69525558T2 DE69525558T2 DE69525558T DE69525558T DE69525558T2 DE 69525558 T2 DE69525558 T2 DE 69525558T2 DE 69525558 T DE69525558 T DE 69525558T DE 69525558 T DE69525558 T DE 69525558T DE 69525558 T2 DE69525558 T2 DE 69525558T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- amorphous silicon
- thin film
- film transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010410 layer Substances 0.000 claims description 65
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910000077 silane Inorganic materials 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8422994 | 1994-04-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69525558D1 DE69525558D1 (de) | 2002-04-04 |
| DE69525558T2 true DE69525558T2 (de) | 2002-08-22 |
Family
ID=13824652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69525558T Expired - Lifetime DE69525558T2 (de) | 1994-04-22 | 1995-04-20 | Methode zur Herstellung eines Dünnfilm-Transistors mit invertierter Struktur |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5561074A (enExample) |
| EP (1) | EP0678907B1 (enExample) |
| KR (1) | KR0180323B1 (enExample) |
| DE (1) | DE69525558T2 (enExample) |
| TW (1) | TW291597B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2833545B2 (ja) * | 1995-03-06 | 1998-12-09 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3082679B2 (ja) * | 1996-08-29 | 2000-08-28 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| WO1998057506A1 (en) * | 1997-06-12 | 1998-12-17 | Northern Telecom Limited | Directory service based on geographic location of a mobile telecommunications unit |
| JP2001308339A (ja) | 2000-02-18 | 2001-11-02 | Sharp Corp | 薄膜トランジスタ |
| JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4118485B2 (ja) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN100477129C (zh) * | 2006-02-08 | 2009-04-08 | 财团法人工业技术研究院 | 薄膜晶体管、有机电致发光显示元件及其制造方法 |
| KR101576813B1 (ko) * | 2007-08-17 | 2015-12-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| KR101452204B1 (ko) * | 2007-11-05 | 2014-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 상기 박막 트랜지스터를 구비하는 표시 장치 |
| TWI487104B (zh) * | 2008-11-07 | 2015-06-01 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237420A (ja) * | 1985-04-13 | 1986-10-22 | Oki Electric Ind Co Ltd | Ｐ型アモルフアスシリコン薄膜の製造方法 |
| US4882295A (en) * | 1985-07-26 | 1989-11-21 | Energy Conversion Devices, Inc. | Method of making a double injection field effect transistor |
| US5270224A (en) * | 1988-03-11 | 1993-12-14 | Fujitsu Limited | Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit |
| JPH01241175A (ja) * | 1988-03-23 | 1989-09-26 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタの製造方法 |
| US5053354A (en) * | 1988-05-30 | 1991-10-01 | Seikosha Co., Ltd. | Method of fabricating a reverse staggered type silicon thin film transistor |
| JPH01302769A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
| JPH07114285B2 (ja) * | 1988-12-16 | 1995-12-06 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
| US5109260A (en) * | 1989-07-10 | 1992-04-28 | Seikosha Co., Ltd. | Silicon thin film transistor and method for producing the same |
| EP0606114A1 (en) * | 1989-08-11 | 1994-07-13 | Seiko Instruments Inc. | Method of producing field effect transistor |
| DE4192351T (enExample) * | 1990-10-05 | 1992-10-08 | ||
| JPH04321275A (ja) * | 1991-04-19 | 1992-11-11 | Nec Corp | 薄膜トランジスタ |
| JPH04367276A (ja) * | 1991-06-14 | 1992-12-18 | Nec Corp | 薄膜トランジスタおよびその製造方法 |
| JPH04367277A (ja) * | 1991-06-14 | 1992-12-18 | Nec Corp | 薄膜トランジスタおよびその製造方法 |
| JPH0583197A (ja) * | 1991-09-21 | 1993-04-02 | Alpine Electron Inc | デイジタルオーデイオ装置 |
-
1995
- 1995-04-20 DE DE69525558T patent/DE69525558T2/de not_active Expired - Lifetime
- 1995-04-20 EP EP95105936A patent/EP0678907B1/en not_active Expired - Lifetime
- 1995-04-20 US US08/425,806 patent/US5561074A/en not_active Expired - Lifetime
- 1995-04-21 TW TW084103943A patent/TW291597B/zh not_active IP Right Cessation
- 1995-04-21 KR KR1019950009475A patent/KR0180323B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0678907B1 (en) | 2002-02-27 |
| DE69525558D1 (de) | 2002-04-04 |
| KR0180323B1 (ko) | 1999-04-15 |
| KR950030282A (ko) | 1995-11-24 |
| EP0678907A3 (en) | 1997-08-20 |
| EP0678907A2 (en) | 1995-10-25 |
| TW291597B (enExample) | 1996-11-21 |
| US5561074A (en) | 1996-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NEC LCD TECHNOLOGIES, LTD., KAWASAKI, KANAGAWA, JP |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKYO, JP |
|
| R082 | Change of representative |
Ref document number: 678907 Country of ref document: EP Representative=s name: MUELLER-BORE & PARTNER PATENTANWAELTE, EUROPEA, DE |