KR0180323B1 - 박막 트랜지스터의 제조방법 - Google Patents

박막 트랜지스터의 제조방법 Download PDF

Info

Publication number
KR0180323B1
KR0180323B1 KR1019950009475A KR19950009475A KR0180323B1 KR 0180323 B1 KR0180323 B1 KR 0180323B1 KR 1019950009475 A KR1019950009475 A KR 1019950009475A KR 19950009475 A KR19950009475 A KR 19950009475A KR 0180323 B1 KR0180323 B1 KR 0180323B1
Authority
KR
South Korea
Prior art keywords
layer
amorphous silicon
film transistor
forming
channel layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950009475A
Other languages
English (en)
Korean (ko)
Other versions
KR950030282A (ko
Inventor
신 고이데
스스무 오히
Original Assignee
가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가네꼬 히사시, 닛뽕덴끼 가부시끼가이샤 filed Critical 가네꼬 히사시
Publication of KR950030282A publication Critical patent/KR950030282A/ko
Application granted granted Critical
Publication of KR0180323B1 publication Critical patent/KR0180323B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
KR1019950009475A 1994-04-22 1995-04-21 박막 트랜지스터의 제조방법 Expired - Fee Related KR0180323B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-84229 1994-04-22
JP8422994 1994-04-22

Publications (2)

Publication Number Publication Date
KR950030282A KR950030282A (ko) 1995-11-24
KR0180323B1 true KR0180323B1 (ko) 1999-04-15

Family

ID=13824652

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950009475A Expired - Fee Related KR0180323B1 (ko) 1994-04-22 1995-04-21 박막 트랜지스터의 제조방법

Country Status (5)

Country Link
US (1) US5561074A (enExample)
EP (1) EP0678907B1 (enExample)
KR (1) KR0180323B1 (enExample)
DE (1) DE69525558T2 (enExample)
TW (1) TW291597B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100884230B1 (ko) * 2000-03-06 2009-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833545B2 (ja) * 1995-03-06 1998-12-09 日本電気株式会社 半導体装置の製造方法
JP3082679B2 (ja) * 1996-08-29 2000-08-28 日本電気株式会社 薄膜トランジスタおよびその製造方法
WO1998057506A1 (en) * 1997-06-12 1998-12-17 Northern Telecom Limited Directory service based on geographic location of a mobile telecommunications unit
JP2001308339A (ja) 2000-02-18 2001-11-02 Sharp Corp 薄膜トランジスタ
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4785229B2 (ja) 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN100477129C (zh) * 2006-02-08 2009-04-08 财团法人工业技术研究院 薄膜晶体管、有机电致发光显示元件及其制造方法
KR101576813B1 (ko) * 2007-08-17 2015-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101452204B1 (ko) * 2007-11-05 2014-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 상기 박막 트랜지스터를 구비하는 표시 장치
TWI487104B (zh) * 2008-11-07 2015-06-01 Semiconductor Energy Lab 半導體裝置和其製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237420A (ja) * 1985-04-13 1986-10-22 Oki Electric Ind Co Ltd Ｐ型アモルフアスシリコン薄膜の製造方法
US4882295A (en) * 1985-07-26 1989-11-21 Energy Conversion Devices, Inc. Method of making a double injection field effect transistor
US5270224A (en) * 1988-03-11 1993-12-14 Fujitsu Limited Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
US5053354A (en) * 1988-05-30 1991-10-01 Seikosha Co., Ltd. Method of fabricating a reverse staggered type silicon thin film transistor
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
JPH07114285B2 (ja) * 1988-12-16 1995-12-06 日本電気株式会社 薄膜トランジスタの製造方法
US5109260A (en) * 1989-07-10 1992-04-28 Seikosha Co., Ltd. Silicon thin film transistor and method for producing the same
EP0606114A1 (en) * 1989-08-11 1994-07-13 Seiko Instruments Inc. Method of producing field effect transistor
DE4192351T (enExample) * 1990-10-05 1992-10-08
JPH04321275A (ja) * 1991-04-19 1992-11-11 Nec Corp 薄膜トランジスタ
JPH04367276A (ja) * 1991-06-14 1992-12-18 Nec Corp 薄膜トランジスタおよびその製造方法
JPH04367277A (ja) * 1991-06-14 1992-12-18 Nec Corp 薄膜トランジスタおよびその製造方法
JPH0583197A (ja) * 1991-09-21 1993-04-02 Alpine Electron Inc デイジタルオーデイオ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100884230B1 (ko) * 2000-03-06 2009-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치

Also Published As

Publication number Publication date
DE69525558T2 (de) 2002-08-22
EP0678907B1 (en) 2002-02-27
DE69525558D1 (de) 2002-04-04
KR950030282A (ko) 1995-11-24
EP0678907A3 (en) 1997-08-20
EP0678907A2 (en) 1995-10-25
TW291597B (enExample) 1996-11-21
US5561074A (en) 1996-10-01

Similar Documents

Publication Publication Date Title
US4287661A (en) Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation
KR0180323B1 (ko) 박막 트랜지스터의 제조방법
US6018166A (en) Polysilicon carbon source/drain heterojunction thin-film transistor
US5470763A (en) Method for manufacturing thin film transistor with short hydrogen passivation time
US4741964A (en) Structure containing hydrogenated amorphous silicon and process
US4823180A (en) Photo-transistor in MOS thin-film technology and method for production and operation thereof
EP0589713B1 (en) A thin film semiconductor device and a method for producing the same
US5141885A (en) Method of fabrication of thin film transistors
WO2009129391A2 (en) Low temperature thin film transistor process, device property, and device stability improvement
US5429983A (en) Method of manufacturing semiconductor device
EP0637837A2 (en) Method for fabricating a thin film transistor
JP2947828B2 (ja) 半導体装置の製造方法
KR100344845B1 (ko) 반도체장치와 그 제조방법
US4119992A (en) Integrated circuit structure and method for making same
US5923050A (en) Amorphous silicon TFT
JPH03116875A (ja) 薄膜電界効果トランジスタ及び薄膜電界効果トランジスタの製造方法
US6514803B1 (en) Process for making an amorphous silicon thin film semiconductor device
JP3186182B2 (ja) 薄膜半導体装置及びその製造方法
US6977406B2 (en) Short channel insulated-gate static induction transistor and method of manufacturing the same
US5319231A (en) Insulated gate semiconductor device having an elevated plateau like portion
JPH04367277A (ja) 薄膜トランジスタおよびその製造方法
KR100291254B1 (ko) 실리콘박막전도소자의제조방법
JPH088440A (ja) 薄膜トランジスタとその製造方法
KR19980080237A (ko) 반도체 집적 회로 장치
KR100301852B1 (ko) 박막트랜지스터제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20111129

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

FPAY Annual fee payment

Payment date: 20121129

Year of fee payment: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20131202

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20131202

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000