DE69504451D1 - Schutz gegen elektrostatische Entladungen für integrierte Schaltungen - Google Patents

Schutz gegen elektrostatische Entladungen für integrierte Schaltungen

Info

Publication number
DE69504451D1
DE69504451D1 DE69504451T DE69504451T DE69504451D1 DE 69504451 D1 DE69504451 D1 DE 69504451D1 DE 69504451 T DE69504451 T DE 69504451T DE 69504451 T DE69504451 T DE 69504451T DE 69504451 D1 DE69504451 D1 DE 69504451D1
Authority
DE
Germany
Prior art keywords
integrated circuits
protection against
electrostatic discharge
against electrostatic
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69504451T
Other languages
English (en)
Other versions
DE69504451T2 (de
Inventor
Richard K Williams
Peter Hille
Robert G Wrathall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of DE69504451D1 publication Critical patent/DE69504451D1/de
Application granted granted Critical
Publication of DE69504451T2 publication Critical patent/DE69504451T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
DE69504451T 1994-10-19 1995-10-19 Schutz gegen elektrostatische Entladungen für integrierte Schaltungen Expired - Fee Related DE69504451T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/326,172 US5545909A (en) 1994-10-19 1994-10-19 Electrostatic discharge protection device for integrated circuit

Publications (2)

Publication Number Publication Date
DE69504451D1 true DE69504451D1 (de) 1998-10-08
DE69504451T2 DE69504451T2 (de) 1999-03-18

Family

ID=23271097

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69504451T Expired - Fee Related DE69504451T2 (de) 1994-10-19 1995-10-19 Schutz gegen elektrostatische Entladungen für integrierte Schaltungen

Country Status (5)

Country Link
US (4) US5545909A (de)
EP (1) EP0708516B1 (de)
JP (1) JP3009614B2 (de)
DE (1) DE69504451T2 (de)
HK (1) HK1015190A1 (de)

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2874583B2 (ja) * 1995-02-10 1999-03-24 日本電気株式会社 半導体装置の入力保護回路
JPH09115999A (ja) * 1995-10-23 1997-05-02 Denso Corp 半導体集積回路装置
US5744840A (en) * 1995-11-20 1998-04-28 Ng; Kwok Kwok Electrostatic protection devices for protecting semiconductor integrated circuitry
US6218882B1 (en) * 1995-12-23 2001-04-17 Nec Corporation Diode circuit for clamping the signals on a transmission line to a predetermined potential
US5644167A (en) * 1996-03-01 1997-07-01 National Semiconductor Corporation Integrated circuit package assemblies including an electrostatic discharge interposer
JP3245042B2 (ja) * 1996-03-11 2002-01-07 沖電気工業株式会社 同調発振回路
US5674761A (en) * 1996-05-02 1997-10-07 Etron Technology, Inc. Method of making ESD protection device structure for low supply voltage applications
US5811338A (en) * 1996-08-09 1998-09-22 Micron Technology, Inc. Method of making an asymmetric transistor
US5808342A (en) * 1996-09-26 1998-09-15 Texas Instruments Incorporated Bipolar SCR triggering for ESD protection of high speed bipolar/BiCMOS circuits
US6025746A (en) * 1996-12-23 2000-02-15 Stmicroelectronics, Inc. ESD protection circuits
US6218704B1 (en) * 1997-05-07 2001-04-17 International Business Machines Corporation ESD protection structure and method
US6191633B1 (en) * 1997-09-12 2001-02-20 Nec Corporation Semiconductor integrated circuit with protection circuit against electrostatic discharge
US6066971A (en) * 1997-10-02 2000-05-23 Motorola, Inc. Integrated circuit having buffering circuitry with slew rate control
KR100236487B1 (ko) 1997-10-22 2000-01-15 윤종용 정전기 방전 불량을 방지하기 위한 분할형 칩 흡착수단을구비하는 칩 접착 장치
US5910673A (en) * 1997-12-04 1999-06-08 Sharp Microelectronics Technology, Inc. Locos MOS device for ESD protection
EP0932203B1 (de) * 1997-12-31 2009-02-18 STMicroelectronics S.r.l. Methode und Schaltung zur Verbesserung der Eigenschaften eines ESD-Schutzes für integrierte Halbleiterschaltungen
US6060752A (en) * 1997-12-31 2000-05-09 Siliconix, Incorporated Electrostatic discharge protection circuit
KR19990074584A (ko) * 1998-03-12 1999-10-05 김영환 정전방전 보호 회로를 갖는 반도체 소자
US6038116A (en) * 1998-05-08 2000-03-14 Cirrus Logic, Inc. High voltage input pad system
US6037636A (en) * 1998-05-19 2000-03-14 National Semiconductor Corporation Electrostatic discharge protection circuit and method
KR100307554B1 (ko) * 1998-06-30 2001-11-15 박종섭 Esd 소자를 구비하는 반도체장치
US6211001B1 (en) * 1998-07-24 2001-04-03 Sharp Laboratories Of America, Inc. Electrostatic discharge protection for salicided devices and method of making same
US6844600B2 (en) 1998-09-03 2005-01-18 Micron Technology, Inc. ESD/EOS protection structure for integrated circuit devices
KR100532367B1 (ko) * 1998-09-16 2006-01-27 페어차일드코리아반도체 주식회사 보호 다이오드를 내재한 수평형 확산 모스 트랜지스터 및 그 제조방법
KR100505619B1 (ko) * 1998-09-29 2005-09-26 삼성전자주식회사 반도체소자의정전하방전회로,그구조체및그구조체의제조방법
US6936531B2 (en) 1998-12-21 2005-08-30 Megic Corporation Process of fabricating a chip structure
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US6169001B1 (en) 1999-02-12 2001-01-02 Vanguard International Semiconductor Corporation CMOS device with deep current path for ESD protection
JP4995364B2 (ja) * 1999-03-25 2012-08-08 セイコーインスツル株式会社 半導体集積回路装置
US6265756B1 (en) * 1999-04-19 2001-07-24 Triquint Semiconductor, Inc. Electrostatic discharge protection device
US6347026B1 (en) 1999-05-26 2002-02-12 Lsi Logic Corporation Input and power protection circuit implemented in a complementary metal oxide semiconductor process using salicides
US6140682A (en) * 1999-07-09 2000-10-31 Macronix International Co., Ltd. Self protected stacked NMOS with non-silicided region to protect mixed-voltage I/O pad from ESD damage
US6396673B1 (en) 1999-10-08 2002-05-28 Marconi Communications, Inc. Reduced-loss, high-frequency signal transmission system utilizing an over-voltage and over-current protection device
US6218226B1 (en) * 2000-01-21 2001-04-17 Vanguard International Semiconductor Corporation Method of forming an ESD protection device
US6624998B2 (en) 2000-01-24 2003-09-23 Medtronic, Inc. Electrostatic discharge protection scheme in low potential drop environments
JP3675303B2 (ja) * 2000-05-31 2005-07-27 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置及びその製造方法
DE10027397A1 (de) * 2000-06-02 2001-12-13 Graffinity Pharm Design Gmbh Oberfläche zur Immobilisierung von Liganden
US7271489B2 (en) * 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US6835985B2 (en) * 2000-12-07 2004-12-28 Chartered Semiconductor Manufacturing Ltd. ESD protection structure
KR100369361B1 (ko) * 2001-03-30 2003-01-30 주식회사 하이닉스반도체 실리사이드 정전방전보호 트랜지스터를 갖는 집적회로
JP5172056B2 (ja) * 2001-06-04 2013-03-27 ラピスセミコンダクタ株式会社 半導体装置
US6576506B2 (en) * 2001-06-29 2003-06-10 Agere Systems Inc. Electrostatic discharge protection in double diffused MOS transistors
US6683344B2 (en) * 2001-09-07 2004-01-27 Ixys Corporation Rugged and fast power MOSFET and IGBT
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
US6717219B1 (en) * 2002-04-12 2004-04-06 National Semiconductor Corporation High holding voltage ESD protection structure for BiCMOS technology
US6704180B2 (en) 2002-04-25 2004-03-09 Medtronic, Inc. Low input capacitance electrostatic discharge protection circuit utilizing feedback
US6753575B2 (en) * 2002-06-11 2004-06-22 Texas Instruments Incorporated Tank-isolated-drain-extended power device
US6770935B2 (en) * 2002-06-11 2004-08-03 Texas Instruments Incorporated Array of transistors with low voltage collector protection
US6729886B2 (en) 2002-06-11 2004-05-04 Texas Instruments Incorporated Method of fabricating a drain isolated LDMOS device
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US6855985B2 (en) 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
CN100442514C (zh) * 2002-11-29 2008-12-10 株式会社东芝 半导体集成电路装置及使用它的电子卡
US7009820B1 (en) * 2002-12-24 2006-03-07 Western Digital Technologies, Inc. Disk drive comprising depletion mode MOSFETs for protecting a head from electrostatic discharge
TW591788B (en) * 2003-04-02 2004-06-11 United Radiotek Inc Protection circuit scheme for electrostatic discharge
EP1498998A1 (de) * 2003-07-16 2005-01-19 Dialog Semiconductor GmbH Schutzschalter mit Sperrspannungsschutz
US7193828B2 (en) * 2003-09-11 2007-03-20 Visteon Global Technologies, Inc. Video protection circuit providing short to battery protection while maintaining termination impedance
US7098509B2 (en) * 2004-01-02 2006-08-29 Semiconductor Components Industries, L.L.C. High energy ESD structure and method
US20060044725A1 (en) * 2004-08-31 2006-03-02 Cisco Technology, Inc. Monolithic solid state relay circuit for telecom wireline applications
US20060065932A1 (en) * 2004-09-30 2006-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit to improve ESD performance made by fully silicided process
DE102004052868B4 (de) * 2004-11-02 2007-02-08 Infineon Technologies Ag Integrierte Schaltkreis-Anordnung und Schaltkreis-Array
JP2006245489A (ja) * 2005-03-07 2006-09-14 Toshiba Corp 半導体装置
JP2006310790A (ja) * 2005-03-30 2006-11-09 Sanyo Electric Co Ltd 半導体装置
JP4944460B2 (ja) * 2005-03-30 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 半導体装置
FR2884050B1 (fr) * 2005-04-01 2007-07-20 St Microelectronics Sa Circuit integre comprenant un substrat et une resistance
DE102005028919B4 (de) * 2005-06-22 2010-07-01 Infineon Technologies Ag Verfahren zum Herstellen eines elektronischen Bauelementes und elektronisches Bauelement
US7583485B1 (en) 2005-07-26 2009-09-01 Vishay-Siliconix Electrostatic discharge protection circuit for integrated circuits
US7561391B2 (en) * 2005-12-20 2009-07-14 International Rectifier Corporation Input voltage sensing circuit
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
JP2009524248A (ja) * 2006-01-18 2009-06-25 ビシェイ−シリコニクス 高い静電放電性能を有するフローティングゲート構造
US20070167038A1 (en) * 2006-01-18 2007-07-19 Glenn Goodman Hermaphroditic socket/adapter
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
JP2008085186A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
JP2008085187A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
DE102006049740A1 (de) * 2006-10-21 2008-04-24 Atmel Germany Gmbh Halbleiterbauelement
US7642600B1 (en) * 2006-12-07 2010-01-05 National Semiconductor Corporation System and method for providing a low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection
US10062788B2 (en) * 2008-07-30 2018-08-28 Maxpower Semiconductor Inc. Semiconductor on insulator devices containing permanent charge
TW200905860A (en) * 2007-07-31 2009-02-01 Amazing Microelectroing Corp Symmetric type bi-directional silicon control rectifier
TWI358813B (en) * 2008-04-21 2012-02-21 Vanguard Int Semiconduct Corp Trig modulation electrostatic discharge (esd) prot
US7999357B1 (en) 2008-05-12 2011-08-16 Semiconductor Components Industries, Llc Electrostatic discharge circuit using forward biased circular-arc shaped steering diodes
US8134296B2 (en) * 2008-10-28 2012-03-13 Chia Chun Lee Regulating circuitry for automobile light systems
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
JP5486962B2 (ja) * 2009-04-28 2014-05-07 株式会社メガチップス 半導体集積回路
JP2011014738A (ja) * 2009-07-02 2011-01-20 Mitsumi Electric Co Ltd 半導体集積回路
CN102025137B (zh) * 2009-09-21 2013-08-21 群康科技(深圳)有限公司 静电放电保护电路及具有静电放电保护电路的电子装置
JP2011077484A (ja) * 2009-10-02 2011-04-14 Sanyo Electric Co Ltd 半導体装置
US8045306B2 (en) * 2009-10-16 2011-10-25 Himax Technologies Limited Electrical-overstress protection circuit for an integrated circuit
JP5546991B2 (ja) * 2010-08-09 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置
JP5749616B2 (ja) * 2011-09-27 2015-07-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP2013073992A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP2013073993A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP5594546B2 (ja) * 2012-03-02 2014-09-24 横河電機株式会社 入力保護回路
KR101338286B1 (ko) * 2012-04-03 2013-12-06 주식회사 하이딥 튜너블 커패시터
TWI472035B (zh) * 2012-07-30 2015-02-01 Macronix Int Co Ltd 場元件
CN103579298B (zh) * 2012-08-09 2016-04-27 旺宏电子股份有限公司 高压半导体元件的场元件
US8896061B2 (en) * 2012-09-14 2014-11-25 Macronix International Co., Ltd. Field device and method of operating high voltage semiconductor device applied with the same
US9054524B2 (en) 2012-10-19 2015-06-09 Macronix International Co., Ltd. Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection
US8963253B2 (en) * 2012-10-23 2015-02-24 Macronix International Co., Ltd. Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection
TWI474482B (zh) * 2012-11-15 2015-02-21 Macronix Int Co Ltd Epi製程以新式應用低壓架構用於雙向高壓esd防護之雙載子電晶體
TWI500156B (zh) * 2012-12-03 2015-09-11 Macronix Int Co Ltd 用於高電壓靜電放電防護的雙向雙極型接面電晶體
CN103855152B (zh) * 2012-12-07 2016-06-08 旺宏电子股份有限公司 用于高电压静电放电防护的双向双极型结晶体管
US9177952B2 (en) * 2013-10-15 2015-11-03 Freescale Semiconductor, Inc. ESD protection with asymmetrical bipolar-based device
CN105097795B (zh) * 2014-05-04 2018-03-16 无锡华润上华科技有限公司 具esd保护结构的半导体器件
US9748232B2 (en) 2014-12-31 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10978869B2 (en) * 2016-08-23 2021-04-13 Alpha And Omega Semiconductor Incorporated USB type-C load switch ESD protection
US10692854B2 (en) 2017-03-28 2020-06-23 Semtech Corporation Method and device for electrical overstress and electrostatic discharge protection
KR20200111187A (ko) * 2018-01-25 2020-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 재료 및 반도체 장치
JP7130495B2 (ja) * 2018-08-29 2022-09-05 日清紡マイクロデバイス株式会社 負荷駆動回路
JP7383343B2 (ja) 2019-12-24 2023-11-20 エイブリック株式会社 静電保護回路及び半導体装置
US11411393B2 (en) * 2020-10-05 2022-08-09 Littelfuse, Inc. Ultra-low clamping voltage surge protection module using depletion mode MOSFET

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2671393A (en) 1951-02-21 1954-03-09 Polaroid Corp Film-processing apparatus which employs liquid-carrying containers
US2693093A (en) 1951-12-07 1954-11-02 Herbert A Cutting Bearing assembly locking clip
US2693293A (en) 1952-12-06 1954-11-02 Alfred T Stuckart Portable book container
JPS5139513A (ja) * 1974-10-01 1976-04-02 Ishikawajima Harima Heavy Ind Kensozaisuratsujiperetaijingusochi
JPS5510144B2 (de) * 1974-11-25 1980-03-14
JPS54116887A (en) * 1978-03-02 1979-09-11 Nec Corp Mos type semiconductor device
JPS6089960A (ja) * 1984-08-06 1985-05-20 Nec Corp 半導体集積回路装置
US4978631A (en) * 1986-07-25 1990-12-18 Siliconix Incorporated Current source with a process selectable temperature coefficient
US5060037A (en) * 1987-04-03 1991-10-22 Texas Instruments Incorporated Output buffer with enhanced electrostatic discharge protection
US4912745A (en) * 1987-05-19 1990-03-27 Gazelle Microcircuits, Inc. Logic circuit connecting input and output signal lines
DE58906591D1 (de) * 1989-06-08 1994-02-10 Siemens Ag Schaltungsanordnung zum Schutz elektronischer Schaltungen vor Überspannung.
JP2504838B2 (ja) * 1989-07-27 1996-06-05 日本電気アイシーマイコンシステム株式会社 半導体集積回路の入出力保護装置
US5246872A (en) * 1991-01-30 1993-09-21 National Semiconductor Corporation Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions
JP3052462B2 (ja) * 1991-07-26 2000-06-12 日本電気株式会社 半導体集積回路装置
JPH0548021A (ja) * 1991-08-09 1993-02-26 Sumitomo Metal Ind Ltd 半導体保護回路
WO1994005042A1 (en) * 1992-08-14 1994-03-03 International Business Machines Corporation Mos device having protection against electrostatic discharge
JP2958202B2 (ja) * 1992-12-01 1999-10-06 シャープ株式会社 半導体装置
JPH06232350A (ja) * 1993-02-04 1994-08-19 Sumitomo Electric Ind Ltd 入力保護回路

Also Published As

Publication number Publication date
US5654574A (en) 1997-08-05
HK1015190A1 (en) 1999-10-08
DE69504451T2 (de) 1999-03-18
EP0708516A1 (de) 1996-04-24
JP3009614B2 (ja) 2000-02-14
US5545909A (en) 1996-08-13
US5877534A (en) 1999-03-02
EP0708516B1 (de) 1998-09-02
US5677205A (en) 1997-10-14
JPH08227976A (ja) 1996-09-03

Similar Documents

Publication Publication Date Title
DE69504451D1 (de) Schutz gegen elektrostatische Entladungen für integrierte Schaltungen
DE69933595D1 (de) Schutzschaltung gegen elektrostatische Entladung
EP0699346A4 (de) Scr elektrostatischer entladungsschutz für integrierte schaltungen
DE69424795T2 (de) Schutzschaltung gegen elektrostatische entladung
DE69524021T2 (de) Elektrostatische Entladungsschutzanordnung für MOS-ingegrierte Schaltungen
DE69311627T2 (de) Schutzvorrichtung einer integrierten Schaltung gegen elektrostatische Entladungen
DE19781646T1 (de) Spannungstolerante elektrostatische Entladungsschutzeinrichtung
EP0694969A3 (de) Schutz gegen elektrostatische Entladungen für Submikron-CMOS-Schaltungen
DE69616081D1 (de) Verbindungsschema für integrierte schaltungen
EP0776527A4 (de) Schutzschaltung gegen eltektrostatische entladung
DE69635018D1 (de) Schutz gegen elektrostatische entladung für ein makrozellenfeld
DE69518571D1 (de) Schutzanordnung gegen elektrostatische Entladungen
DE59814102D1 (de) Integrierte Halbleiterschaltung mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
DE69331363T2 (de) Elektrostatische Entladungsschutzvorrichtung für Büroraüme
DE59804831D1 (de) Esd-schutzvorrichtung für integrierte schaltungen
DE69936677D1 (de) Schutzstruktur für eine integrierte Schaltungshalbleiteranordnung gegen elektrostatische Entladungen
DE69818264D1 (de) Schutzanordnung gegen elektrostatische entladungen
DE69838466D1 (de) Elektrostatische Schutzstruktur für MOS-Schaltungen
DE69801791D1 (de) Elektrostatische Schutzschaltung
FR2718569B1 (fr) Circuit de protection assurant la protection des circuits intégrés contre les décharges électrostatiques (ESD).
DE69524858D1 (de) Bauelement zum Schutz einer integrierten Schaltung gegen elektrostatische Entladungen
ITGE950011A0 (it) Dispositivo di protezione di ingressi contro scariche elettrostatiche
DE69523391D1 (de) Schutzschaltung gegen elektrostatische Entladung
DE59410070D1 (de) ESD-Schutzstruktur für integrierte Schaltungen
DE29503652U1 (de) Blendschutz für Computerbildschirme

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee