DE69635018D1 - Schutz gegen elektrostatische entladung für ein makrozellenfeld - Google Patents

Schutz gegen elektrostatische entladung für ein makrozellenfeld

Info

Publication number
DE69635018D1
DE69635018D1 DE69635018T DE69635018T DE69635018D1 DE 69635018 D1 DE69635018 D1 DE 69635018D1 DE 69635018 T DE69635018 T DE 69635018T DE 69635018 T DE69635018 T DE 69635018T DE 69635018 D1 DE69635018 D1 DE 69635018D1
Authority
DE
Germany
Prior art keywords
macroclean
field
protection against
electrostatic discharge
against electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69635018T
Other languages
English (en)
Other versions
DE69635018T2 (de
Inventor
Ronald Avery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarnoff Corp
Original Assignee
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarnoff Corp filed Critical Sarnoff Corp
Application granted granted Critical
Publication of DE69635018D1 publication Critical patent/DE69635018D1/de
Publication of DE69635018T2 publication Critical patent/DE69635018T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69635018T 1995-05-12 1996-05-13 Schutz gegen elektrostatische entladung für ein makrozellenfeld Expired - Fee Related DE69635018T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/439,929 US5548135A (en) 1995-05-12 1995-05-12 Electrostatic discharge protection for an array of macro cells
US439929 1995-05-12
PCT/IB1996/000587 WO1996036988A2 (en) 1995-05-12 1996-05-13 Electrostatic discharge protection for an array of macro cells

Publications (2)

Publication Number Publication Date
DE69635018D1 true DE69635018D1 (de) 2005-09-08
DE69635018T2 DE69635018T2 (de) 2006-06-01

Family

ID=23746722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69635018T Expired - Fee Related DE69635018T2 (de) 1995-05-12 1996-05-13 Schutz gegen elektrostatische entladung für ein makrozellenfeld

Country Status (6)

Country Link
US (1) US5548135A (de)
EP (1) EP0826243B1 (de)
JP (1) JP3183892B2 (de)
KR (1) KR100301549B1 (de)
DE (1) DE69635018T2 (de)
WO (1) WO1996036988A2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702402B1 (de) * 1994-09-13 2003-01-15 STMicroelectronics S.r.l. Verfahren zur Herstellung integrierter Schaltungen und erzeugte Halbleiterscheibe
US5808947A (en) * 1995-08-21 1998-09-15 Sgs-Thomson Microelectronics, Inc. Integrated circuit that supports and method for wafer-level testing
US5861660A (en) * 1995-08-21 1999-01-19 Stmicroelectronics, Inc. Integrated-circuit die suitable for wafer-level testing and method for forming the same
US6477687B1 (en) * 1998-06-01 2002-11-05 Nvidia U.S. Investment Company Method of embedding RAMS and other macrocells in the core of an integrated circuit chip
US6242814B1 (en) * 1998-07-31 2001-06-05 Lsi Logic Corporation Universal I/O pad structure for in-line or staggered wire bonding or arrayed flip-chip assembly
TW473983B (en) * 1999-07-28 2002-01-21 Rohm Co Ltd Semiconductor integrated circuit device
US6947273B2 (en) * 2001-01-29 2005-09-20 Primarion, Inc. Power, ground, and routing scheme for a microprocessor power regulator
EP1321984A3 (de) * 2001-08-24 2004-01-14 STMicroelectronics Limited Eingangs/Ausgangs-Schaltungsanordnung für einen integrierten Halbleiterbaustein
FR2831328A1 (fr) 2001-10-23 2003-04-25 St Microelectronics Sa Protection d'un circuit integre contre des decharges electrostatiques et autres surtensions
US7480010B2 (en) * 2002-09-04 2009-01-20 Denace Enterprise Co., L.L.C. Customizable ASIC with substantially non-customizable portion that supplies pixel data to a mask-programmable portion in multiple color space formats
US7782398B2 (en) * 2002-09-04 2010-08-24 Chan Thomas M Display processor integrated circuit with on-chip programmable logic for implementing custom enhancement functions
US7202908B2 (en) * 2002-09-04 2007-04-10 Darien K. Wallace Deinterlacer using both low angle and high angle spatial interpolation
JP4264640B2 (ja) * 2003-08-19 2009-05-20 ソニー株式会社 半導体装置の製造方法
US7291930B2 (en) * 2005-02-23 2007-11-06 Faraday Technology Corp. Input and output circuit of an integrated circuit chip
JP2008130994A (ja) * 2006-11-24 2008-06-05 Toshiba Corp 静電保護回路
JP2008147376A (ja) * 2006-12-08 2008-06-26 Toshiba Corp 半導体装置
US8247845B2 (en) * 2008-01-28 2012-08-21 Infineon Technologies Ag Electrostatic discharge (ESD) protection circuit placement in semiconductor devices
US7838959B2 (en) * 2008-01-29 2010-11-23 Infineon Technologies Ag Radio frequency (RF) circuit placement in semiconductor devices
EP2789012B1 (de) * 2011-12-08 2020-02-05 Sofics BVBA Elektrostatische entladungsklemme mit hoher haltespannung und mischspannungsbereich
US8680573B2 (en) 2012-04-25 2014-03-25 International Business Machines Corporation Diode-triggered silicon controlled rectifier with an integrated diode
US8946766B2 (en) 2013-02-27 2015-02-03 International Business Machines Corporation Bi-directional silicon controlled rectifier structure
FR3054722B1 (fr) * 2016-07-26 2018-08-17 Stmicroelectronics (Rousset) Sas Structure de protection d'un circuit integre contre les decharges electrostatiques

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904931A (en) * 1973-08-03 1975-09-09 Rca Corp Overvoltage protection circuit
JPS6070742A (ja) * 1983-09-27 1985-04-22 Toshiba Corp マスタ・スライス型半導体装置
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
GB8621839D0 (en) * 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
US5043782A (en) * 1990-05-08 1991-08-27 David Sarnoff Research Center, Inc. Low voltage triggered snap-back device
US5237395A (en) * 1991-05-28 1993-08-17 Western Digital Corporation Power rail ESD protection circuit
US5535084A (en) * 1992-07-24 1996-07-09 Kawasaki Steel Corporation Semiconductor integrated circuit having protection circuits
JP3351440B2 (ja) * 1992-07-24 2002-11-25 川崎マイクロエレクトロニクス株式会社 半導体集積回路
US5336908A (en) * 1992-08-26 1994-08-09 Micron Semiconductor, Inc. Input EDS protection circuit
JP2884938B2 (ja) * 1992-09-07 1999-04-19 日本電気株式会社 半導体装置
US5361185A (en) * 1993-02-19 1994-11-01 Advanced Micro Devices, Inc. Distributed VCC/VSS ESD clamp structure
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
US5343053A (en) * 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits

Also Published As

Publication number Publication date
DE69635018T2 (de) 2006-06-01
WO1996036988A2 (en) 1996-11-21
KR100301549B1 (ko) 2001-09-22
US5548135A (en) 1996-08-20
EP0826243B1 (de) 2005-08-03
KR19990014842A (ko) 1999-02-25
JP3183892B2 (ja) 2001-07-09
JPH11505374A (ja) 1999-05-18
EP0826243A2 (de) 1998-03-04
WO1996036988A3 (en) 1997-01-16
EP0826243A4 (de) 2000-07-19

Similar Documents

Publication Publication Date Title
DE69635018D1 (de) Schutz gegen elektrostatische entladung für ein makrozellenfeld
DE69504451D1 (de) Schutz gegen elektrostatische Entladungen für integrierte Schaltungen
DE69933595D1 (de) Schutzschaltung gegen elektrostatische Entladung
GB2306770B (en) Electrostatic discharge protection device
DE69424795D1 (de) Schutzschaltung gegen elektrostatische entladung
GB9518233D0 (en) Capacitor-couple electrostatic discharge protection circuit
EP0747888A3 (de) MR-Kopf mit parasitärem Schirm für elektrostatischen Entladungsschutz
DK199900735A (da) Elektrostatiske patroner
DE19781646T1 (de) Spannungstolerante elektrostatische Entladungsschutzeinrichtung
DE69620561D1 (de) Plasmaanzeigefilter
EP0760196A4 (de) Implantatvorrichtung mit schutz gegen elektrostatische entladung
DE69220159D1 (de) Schutzstruktur gegen elektrostatische Entladungen
DE69508810D1 (de) Elektrostatischer Abscheider
DE69832778D1 (de) Schutz gegen elektrostatische entladungen in einem tragbaren kommunikationsgerät
DE69226337D1 (de) Schutzstruktur gegen elektrostatische Entladungen
DE69502103D1 (de) Dosenzähler für inhalatoren
EP0776527A4 (de) Schutzschaltung gegen eltektrostatische entladung
DE69939365D1 (de) Beschützung Sensoren gegen elektrostatische Entladung
DE69622251D1 (de) Elektrostatische Entladungsstruktur für eine Halbleiteranordnung
DE69518571D1 (de) Schutzanordnung gegen elektrostatische Entladungen
DE69331363D1 (de) Elektrostatische Entladungsschutzvorrichtung für Büroraüme
DE69828430D1 (de) Elektrostatisches mikrorelais
DE69813856D1 (de) Koronaentladungsreaktor
AU7650094A (en) Electrostatic discharge generator
DE69818264D1 (de) Schutzanordnung gegen elektrostatische entladungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee