DE69433828D1 - Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung - Google Patents

Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung

Info

Publication number
DE69433828D1
DE69433828D1 DE69433828T DE69433828T DE69433828D1 DE 69433828 D1 DE69433828 D1 DE 69433828D1 DE 69433828 T DE69433828 T DE 69433828T DE 69433828 T DE69433828 T DE 69433828T DE 69433828 D1 DE69433828 D1 DE 69433828D1
Authority
DE
Germany
Prior art keywords
production
bipolar transistor
semiconductor arrangement
lateral bipolar
contains sige
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69433828T
Other languages
English (en)
Other versions
DE69433828T2 (de
Inventor
Hisanori Tsuda
Hidenori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8031793A external-priority patent/JPH06267971A/ja
Priority claimed from JP29818993A external-priority patent/JP3320175B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69433828D1 publication Critical patent/DE69433828D1/de
Application granted granted Critical
Publication of DE69433828T2 publication Critical patent/DE69433828T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66265—Thin film bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE69433828T 1993-03-16 1994-03-15 Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung Expired - Fee Related DE69433828T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8031793A JPH06267971A (ja) 1993-03-16 1993-03-16 半導体装置およびその製造方法
JP8031793 1993-03-16
JP29818993 1993-11-29
JP29818993A JP3320175B2 (ja) 1993-11-29 1993-11-29 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69433828D1 true DE69433828D1 (de) 2004-07-15
DE69433828T2 DE69433828T2 (de) 2005-03-17

Family

ID=26421345

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69433828T Expired - Fee Related DE69433828T2 (de) 1993-03-16 1994-03-15 Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung

Country Status (3)

Country Link
US (1) US6246104B1 (de)
EP (1) EP0616370B1 (de)
DE (1) DE69433828T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376880B1 (en) * 1999-09-27 2002-04-23 Advanced Micro Devices, Inc. High-speed lateral bipolar device in SOI process
EP1094523A3 (de) * 1999-10-21 2003-06-11 Matsushita Electric Industrial Co., Ltd. Lateraler Heteroübergangstransistor und Verfahren zur Herstellung
ES2332869T3 (es) * 1999-11-17 2010-02-15 Boston Scientific Limited Dispositivos microfabricados para la entrega de moleculas en fluidos portadores.
JP3485089B2 (ja) * 2000-12-15 2004-01-13 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3485091B2 (ja) 2001-01-19 2004-01-13 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3485092B2 (ja) 2001-01-19 2004-01-13 セイコーエプソン株式会社 半導体装置およびその製造方法
US6670255B2 (en) * 2001-09-27 2003-12-30 International Business Machines Corporation Method of fabricating lateral diodes and bipolar transistors
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
AU2003267981A1 (en) * 2002-06-28 2004-01-19 Advanced Micro Devices, Inc. Soi field effect transistor element having a recombination region and method of forming same
US6815800B2 (en) * 2002-12-09 2004-11-09 Micrel, Inc. Bipolar junction transistor with reduced parasitic bipolar conduction
US7173320B1 (en) * 2003-04-30 2007-02-06 Altera Corporation High performance lateral bipolar transistor
US6972466B1 (en) * 2004-02-23 2005-12-06 Altera Corporation Bipolar transistors with low base resistance for CMOS integrated circuits
JP2008072095A (ja) * 2006-08-18 2008-03-27 Advanced Lcd Technologies Development Center Co Ltd 電子装置、表示装置、インターフェイス回路、差動増幅装置
WO2011104850A1 (ja) * 2010-02-25 2011-09-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9059016B1 (en) 2014-02-14 2015-06-16 International Business Machines Corporation Lateral heterojunction bipolar transistors
JP6385755B2 (ja) 2014-08-08 2018-09-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN110556420B (zh) * 2019-08-23 2022-11-04 北京工业大学 一种掺杂浓度可调的横向SiGe异质结双极晶体管
US11961901B2 (en) * 2021-12-08 2024-04-16 Globalfoundries U.S. Inc. Bipolar transistor structure with base protruding from emitter/collector and methods to form same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0168771A1 (de) * 1984-07-17 1986-01-22 Siemens Aktiengesellschaft Verfahren zur gezielten Erzeugung von lateralen Dotierungs-gradienten in scheibenförmigen Siliziumkristallen für Halbleiterbauelemente
US4717681A (en) * 1986-05-19 1988-01-05 Texas Instruments Incorporated Method of making a heterojunction bipolar transistor with SIPOS
US5187554A (en) * 1987-08-11 1993-02-16 Sony Corporation Bipolar transistor
US5198689A (en) * 1988-11-30 1993-03-30 Fujitsu Limited Heterojunction bipolar transistor
US5140400A (en) * 1989-03-29 1992-08-18 Canon Kabushiki Kaisha Semiconductor device and photoelectric converting apparatus using the same
JPH0797590B2 (ja) * 1989-11-21 1995-10-18 株式会社東芝 バイポーラトランジスタの製造方法
US5241211A (en) * 1989-12-20 1993-08-31 Nec Corporation Semiconductor device
DE69128364T2 (de) * 1990-02-22 1998-04-09 Canon Kk Lateraler Bipolartransistor
JPH03292740A (ja) * 1990-04-11 1991-12-24 Hitachi Ltd バイポーラトランジスタ及びその製造方法
JP3163092B2 (ja) * 1990-08-09 2001-05-08 株式会社東芝 半導体装置の製造方法
JPH05144834A (ja) * 1991-03-20 1993-06-11 Hitachi Ltd バイポーラトランジスタ及びその製造方法
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
JP2727818B2 (ja) * 1991-09-17 1998-03-18 日本電気株式会社 半導体装置
JP2740087B2 (ja) * 1992-08-15 1998-04-15 株式会社東芝 半導体集積回路装置の製造方法
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
US5329144A (en) * 1993-04-23 1994-07-12 At&T Bell Laboratories Heterojunction bipolar transistor with a specific graded base structure

Also Published As

Publication number Publication date
EP0616370A2 (de) 1994-09-21
EP0616370B1 (de) 2004-06-09
EP0616370A3 (de) 1995-04-19
US6246104B1 (en) 2001-06-12
DE69433828T2 (de) 2005-03-17

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Legal Events

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8339 Ceased/non-payment of the annual fee