DE69128364T2 - Lateraler Bipolartransistor - Google Patents
Lateraler BipolartransistorInfo
- Publication number
- DE69128364T2 DE69128364T2 DE69128364T DE69128364T DE69128364T2 DE 69128364 T2 DE69128364 T2 DE 69128364T2 DE 69128364 T DE69128364 T DE 69128364T DE 69128364 T DE69128364 T DE 69128364T DE 69128364 T2 DE69128364 T2 DE 69128364T2
- Authority
- DE
- Germany
- Prior art keywords
- base
- bipolar transistor
- lateral bipolar
- emitter
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2042068A JP3001601B2 (ja) | 1990-02-22 | 1990-02-22 | 半導体装置 |
JP2042066A JP3001599B2 (ja) | 1990-02-22 | 1990-02-22 | 半導体装置 |
JP2042067A JP3001600B2 (ja) | 1990-02-22 | 1990-02-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69128364D1 DE69128364D1 (de) | 1998-01-15 |
DE69128364T2 true DE69128364T2 (de) | 1998-04-09 |
Family
ID=27291053
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69128364T Expired - Fee Related DE69128364T2 (de) | 1990-02-22 | 1991-02-21 | Lateraler Bipolartransistor |
DE69129376T Expired - Fee Related DE69129376T2 (de) | 1990-02-22 | 1991-02-21 | Lateraler Bipolartransistor |
DE69109890T Expired - Fee Related DE69109890T2 (de) | 1990-02-22 | 1991-02-21 | Lateraler Heterogrenzflächen-Bipolartransistor. |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69129376T Expired - Fee Related DE69129376T2 (de) | 1990-02-22 | 1991-02-21 | Lateraler Bipolartransistor |
DE69109890T Expired - Fee Related DE69109890T2 (de) | 1990-02-22 | 1991-02-21 | Lateraler Heterogrenzflächen-Bipolartransistor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5734183A (de) |
EP (3) | EP0443852B1 (de) |
AT (1) | ATE123175T1 (de) |
DE (3) | DE69128364T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0616370B1 (de) | 1993-03-16 | 2004-06-09 | Canon Kabushiki Kaisha | Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung |
US5422502A (en) * | 1993-12-09 | 1995-06-06 | Northern Telecom Limited | Lateral bipolar transistor |
US6034413A (en) * | 1997-02-27 | 2000-03-07 | Texas Instruments Incorporated | High speed biCMOS gate power for power MOSFETs incorporating improved injection immunity |
EP0881688A1 (de) * | 1997-05-30 | 1998-12-02 | STMicroelectronics S.r.l. | Elektronisches Bauelement vom Typ lateral-bipolar-pnp |
US5912481A (en) | 1997-09-29 | 1999-06-15 | National Scientific Corp. | Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
US6423990B1 (en) | 1997-09-29 | 2002-07-23 | National Scientific Corporation | Vertical heterojunction bipolar transistor |
US6674103B2 (en) * | 2000-07-31 | 2004-01-06 | The Regents Of The University Of California | HBT with nitrogen-containing current blocking base collector interface and method for current blocking |
US6362065B1 (en) * | 2001-02-26 | 2002-03-26 | Texas Instruments Incorporated | Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer |
US6459104B1 (en) * | 2001-05-10 | 2002-10-01 | Newport Fab | Method for fabricating lateral PNP heterojunction bipolar transistor and related structure |
US6670654B2 (en) * | 2002-01-09 | 2003-12-30 | International Business Machines Corporation | Silicon germanium heterojunction bipolar transistor with carbon incorporation |
US6927140B2 (en) | 2002-08-21 | 2005-08-09 | Intel Corporation | Method for fabricating a bipolar transistor base |
US7517768B2 (en) * | 2003-03-31 | 2009-04-14 | Intel Corporation | Method for fabricating a heterojunction bipolar transistor |
EP2180517A1 (de) * | 2008-10-24 | 2010-04-28 | Epcos Ag | Bipolarer PNP-Transistor mit seitlichem Kollektor und Herstellungsverfahren |
CN102386219B (zh) * | 2010-08-31 | 2013-07-24 | 上海华虹Nec电子有限公司 | SiGe HBT工艺中的寄生横向型PNP三极管及制造方法 |
CN102412280B (zh) * | 2010-09-21 | 2013-09-11 | 上海华虹Nec电子有限公司 | 锗硅hbt工艺中的横向型寄生pnp器件 |
CN103377918B (zh) * | 2012-04-27 | 2015-10-21 | 中芯国际集成电路制造(上海)有限公司 | Npn异质结双极晶体管及其制造方法 |
US8558282B1 (en) | 2012-09-08 | 2013-10-15 | International Business Machines Corporation | Germanium lateral bipolar junction transistor |
US9029909B2 (en) * | 2013-06-24 | 2015-05-12 | Ideal Power Inc. | Systems, circuits, devices, and methods with bidirectional bipolar transistors |
CN110556420B (zh) * | 2019-08-23 | 2022-11-04 | 北京工业大学 | 一种掺杂浓度可调的横向SiGe异质结双极晶体管 |
US11462632B2 (en) | 2020-12-22 | 2022-10-04 | Globalfoundries U.S. Inc. | Lateral bipolar junction transistor device and method of making such a device |
US11424349B1 (en) | 2021-02-17 | 2022-08-23 | Globalfoundries U.S. Inc. | Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4672413A (en) * | 1984-04-16 | 1987-06-09 | Trw Inc. | Barrier emitter transistor |
FR2625612B1 (fr) * | 1987-12-30 | 1990-05-04 | Labo Electronique Physique | Procede de realisation d'un dispositif semiconducteur du type transistor bipolaire a heterojonction |
US4987468A (en) * | 1988-06-17 | 1991-01-22 | Xerox Corporation | Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
-
1991
- 1991-02-21 DE DE69128364T patent/DE69128364T2/de not_active Expired - Fee Related
- 1991-02-21 EP EP91301383A patent/EP0443852B1/de not_active Expired - Lifetime
- 1991-02-21 EP EP94203106A patent/EP0642170B1/de not_active Expired - Lifetime
- 1991-02-21 DE DE69129376T patent/DE69129376T2/de not_active Expired - Fee Related
- 1991-02-21 DE DE69109890T patent/DE69109890T2/de not_active Expired - Fee Related
- 1991-02-21 EP EP94203107A patent/EP0642171B1/de not_active Expired - Lifetime
- 1991-02-21 AT AT91301383T patent/ATE123175T1/de not_active IP Right Cessation
-
1995
- 1995-03-29 US US08/412,847 patent/US5734183A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69109890T2 (de) | 1995-11-02 |
DE69109890D1 (de) | 1995-06-29 |
EP0642170A3 (de) | 1995-08-09 |
EP0443852A1 (de) | 1991-08-28 |
DE69129376D1 (de) | 1998-06-10 |
ATE123175T1 (de) | 1995-06-15 |
US5734183A (en) | 1998-03-31 |
EP0642170B1 (de) | 1997-12-03 |
EP0642170A2 (de) | 1995-03-08 |
DE69128364D1 (de) | 1998-01-15 |
EP0642171A2 (de) | 1995-03-08 |
EP0642171A3 (de) | 1995-08-09 |
DE69129376T2 (de) | 1998-09-24 |
EP0642171B1 (de) | 1998-05-06 |
EP0443852B1 (de) | 1995-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |