TW257883B - Process of bipolar junction transistor - Google Patents
Process of bipolar junction transistorInfo
- Publication number
- TW257883B TW257883B TW83108272A TW83108272A TW257883B TW 257883 B TW257883 B TW 257883B TW 83108272 A TW83108272 A TW 83108272A TW 83108272 A TW83108272 A TW 83108272A TW 257883 B TW257883 B TW 257883B
- Authority
- TW
- Taiwan
- Prior art keywords
- bipolar junction
- junction transistor
- area
- forming
- doped base
- Prior art date
Links
Abstract
A process of bipolar junction transistor includes: (1) forming emitter on substrate with collector area and one lightly doped base area; (2) forming highly doped base contact area connecting to the base area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83108272A TW257883B (en) | 1994-09-07 | 1994-09-07 | Process of bipolar junction transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83108272A TW257883B (en) | 1994-09-07 | 1994-09-07 | Process of bipolar junction transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW257883B true TW257883B (en) | 1995-09-21 |
Family
ID=51401746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW83108272A TW257883B (en) | 1994-09-07 | 1994-09-07 | Process of bipolar junction transistor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW257883B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581339B2 (en) | 2011-08-08 | 2013-11-12 | Macronix International Co., Ltd. | Structure of NPN-BJT for improving punch through between collector and emitter |
US11552168B2 (en) | 2018-04-17 | 2023-01-10 | Silanna Asia Pte Ltd | Tiled lateral BJT |
-
1994
- 1994-09-07 TW TW83108272A patent/TW257883B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581339B2 (en) | 2011-08-08 | 2013-11-12 | Macronix International Co., Ltd. | Structure of NPN-BJT for improving punch through between collector and emitter |
US11552168B2 (en) | 2018-04-17 | 2023-01-10 | Silanna Asia Pte Ltd | Tiled lateral BJT |
TWI810265B (en) * | 2018-04-17 | 2023-08-01 | 新加坡商西拉娜亞洲私人有限公司 | Tiled lateral bjt and method of forming a transistor tile |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0642170A3 (en) | Lateral bipolar transistor. | |
DE2962270D1 (en) | Method for fabricating a bipolar transistor having a polysilicon base contact and a polysilicon or metal emitter contact | |
SE8703269D0 (en) | IMPROVE SOS TRANSISTOR CONSTRUCTION | |
KR890004466B1 (en) | Semiconductor device | |
MY104983A (en) | Vertical bipolar transistor. | |
MY108622A (en) | Semiconductor device with shottky junction. | |
EP0349022A3 (en) | Semiconductor device | |
EP0382906A3 (en) | Protected darlington transistor arrangement | |
TW257883B (en) | Process of bipolar junction transistor | |
EP0678906A3 (en) | Method of self aligning an emitter contact in a heterojunction bipolar transistor | |
EP0138563A3 (en) | Lateral transistors | |
MY107443A (en) | Semiconductor device with buried electrode. | |
TW284909B (en) | Bipolar transistor and its semiconductor device | |
EP0656660A3 (en) | BiCMOS process for supporting merged devices | |
EP0231740A3 (en) | A polysilicon self-aligned bipolar device and process of manufacturing same | |
TW330343B (en) | A semiconductor memory device and its manufacturing method | |
EP0378164A3 (en) | Bipolar transistor and method of manufacturing the same | |
TW355814B (en) | Semiconductor device | |
SE9501385D0 (en) | Bipolar silicon-on-insulator transistor | |
JPS5615068A (en) | Semiconductor device and manufacture thereof | |
KR960004094B1 (en) | Bipolar electrode wiring method using polysilicon | |
EP0404109A3 (en) | Diode used in reference potential generating circuit for dram | |
TW227629B (en) | Photo receiver with high sensitivity and high current | |
TW242693B (en) | Self-aligned lateral bipolar junction transistor | |
TW239228B (en) | Process for transistor |