TW257883B - Process of bipolar junction transistor - Google Patents

Process of bipolar junction transistor

Info

Publication number
TW257883B
TW257883B TW83108272A TW83108272A TW257883B TW 257883 B TW257883 B TW 257883B TW 83108272 A TW83108272 A TW 83108272A TW 83108272 A TW83108272 A TW 83108272A TW 257883 B TW257883 B TW 257883B
Authority
TW
Taiwan
Prior art keywords
bipolar junction
junction transistor
area
forming
doped base
Prior art date
Application number
TW83108272A
Other languages
Chinese (zh)
Inventor
Wen-Yueh Jang
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW83108272A priority Critical patent/TW257883B/en
Application granted granted Critical
Publication of TW257883B publication Critical patent/TW257883B/en

Links

Abstract

A process of bipolar junction transistor includes: (1) forming emitter on substrate with collector area and one lightly doped base area; (2) forming highly doped base contact area connecting to the base area.
TW83108272A 1994-09-07 1994-09-07 Process of bipolar junction transistor TW257883B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83108272A TW257883B (en) 1994-09-07 1994-09-07 Process of bipolar junction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83108272A TW257883B (en) 1994-09-07 1994-09-07 Process of bipolar junction transistor

Publications (1)

Publication Number Publication Date
TW257883B true TW257883B (en) 1995-09-21

Family

ID=51401746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83108272A TW257883B (en) 1994-09-07 1994-09-07 Process of bipolar junction transistor

Country Status (1)

Country Link
TW (1) TW257883B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581339B2 (en) 2011-08-08 2013-11-12 Macronix International Co., Ltd. Structure of NPN-BJT for improving punch through between collector and emitter
US11552168B2 (en) 2018-04-17 2023-01-10 Silanna Asia Pte Ltd Tiled lateral BJT

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581339B2 (en) 2011-08-08 2013-11-12 Macronix International Co., Ltd. Structure of NPN-BJT for improving punch through between collector and emitter
US11552168B2 (en) 2018-04-17 2023-01-10 Silanna Asia Pte Ltd Tiled lateral BJT
TWI810265B (en) * 2018-04-17 2023-08-01 新加坡商西拉娜亞洲私人有限公司 Tiled lateral bjt and method of forming a transistor tile

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