DE69404190D1 - Frequenzstabilisationsverfahren für Halbleiterlaser und frequenzstabilisierte Lichtquelle - Google Patents

Frequenzstabilisationsverfahren für Halbleiterlaser und frequenzstabilisierte Lichtquelle

Info

Publication number
DE69404190D1
DE69404190D1 DE69404190T DE69404190T DE69404190D1 DE 69404190 D1 DE69404190 D1 DE 69404190D1 DE 69404190 T DE69404190 T DE 69404190T DE 69404190 T DE69404190 T DE 69404190T DE 69404190 D1 DE69404190 D1 DE 69404190D1
Authority
DE
Germany
Prior art keywords
frequency
light source
semiconductor lasers
stabilization method
stabilized light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404190T
Other languages
English (en)
Other versions
DE69404190T2 (de
Inventor
Takahiro Shiozawa
Masayuki Yamaguchi
Naoya Henmi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7139893A external-priority patent/JPH0770777B2/ja
Priority claimed from JP5128569A external-priority patent/JP2541095B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69404190D1 publication Critical patent/DE69404190D1/de
Application granted granted Critical
Publication of DE69404190T2 publication Critical patent/DE69404190T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69404190T 1993-03-30 1994-03-30 Frequenzstabilisationsverfahren für Halbleiterlaser und frequenzstabilisierte Lichtquelle Expired - Fee Related DE69404190T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7139893A JPH0770777B2 (ja) 1993-03-30 1993-03-30 半導体レーザの波長安定化方法及び波長安定化光源
JP5128569A JP2541095B2 (ja) 1993-05-31 1993-05-31 レ―ザの波長安定化方法

Publications (2)

Publication Number Publication Date
DE69404190D1 true DE69404190D1 (de) 1997-08-21
DE69404190T2 DE69404190T2 (de) 1998-02-19

Family

ID=26412499

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404190T Expired - Fee Related DE69404190T2 (de) 1993-03-30 1994-03-30 Frequenzstabilisationsverfahren für Halbleiterlaser und frequenzstabilisierte Lichtquelle

Country Status (3)

Country Link
US (1) US5392303A (de)
EP (1) EP0618653B1 (de)
DE (1) DE69404190T2 (de)

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JP3218999B2 (ja) * 1996-12-18 2001-10-15 安藤電気株式会社 外部共振器型波長可変半導体レーザ光源
US5818857A (en) * 1997-03-05 1998-10-06 Syncomm Inc. Stabilized DFB laser
JPH1154848A (ja) * 1997-07-29 1999-02-26 Ando Electric Co Ltd 光モジュールの温度制御装置
JPH11125562A (ja) 1997-10-21 1999-05-11 Ando Electric Co Ltd 波長校正装置
JP4124845B2 (ja) * 1997-10-24 2008-07-23 日本オプネクスト株式会社 光波長安定制御装置
JPH11254159A (ja) * 1998-03-10 1999-09-21 Matsushita Electric Ind Co Ltd 光ファイバ出力半導体レーザ加熱装置
US6359918B1 (en) 1998-06-30 2002-03-19 Honeywell International Inc. Light source control device
DE19912463A1 (de) * 1999-03-19 2000-09-28 Sensor Line Ges Fuer Optoelekt Verfahren zur Stabilisierung der optischen Ausgangsleistung von Leuchtdioden und Laserdioden
US6807206B2 (en) 2001-04-16 2004-10-19 The Furukawa Electric Co., Ltd. Semiconductor laser device and drive control method for a semiconductor laser device
US6807208B2 (en) * 2001-08-22 2004-10-19 The Furukawa Electric Co., Ltd. Laser module
JP4844997B2 (ja) * 2001-08-29 2011-12-28 古河電気工業株式会社 レーザモジュール
JP2003283042A (ja) * 2002-01-18 2003-10-03 Sumitomo Electric Ind Ltd 光モジュールおよび光素子制御回路
US6922423B2 (en) * 2003-04-11 2005-07-26 Robert L. Thornton Control system for a semiconductor laser
EP1624543B1 (de) * 2003-05-13 2010-12-01 Nippon Telegraph And Telephone Corporation Optisches modul und verfahren zum überwachen und steuern einer wellenlänge
GB0405554D0 (en) * 2004-03-12 2004-04-21 Xyz Imaging Inc A laser
US7251261B2 (en) 2004-05-14 2007-07-31 C8 Medisensors Inc. Temperature tuning the wavelength of a semiconductor laser using a variable thermal impedance
CN101015100B (zh) * 2004-05-14 2011-05-11 C8麦迪森瑟斯公司 使用可变热阻抗对半导体激光器的波长进行温度调谐
KR100657301B1 (ko) * 2004-12-29 2006-12-14 삼성전자주식회사 레이저 다이오드의 출력제어장치의 제어 파라미터 변경방법 및 제어 파라미터 변경 기능을 구비한 레이저다이오드의 출력제어장치
US8328387B2 (en) 2007-01-17 2012-12-11 Osram Gmbh LED module
JP2009182050A (ja) * 2008-01-29 2009-08-13 Ricoh Co Ltd レーザ光量制御装置、レーザ光量制御方法、画像形成装置
US8050301B2 (en) 2010-02-09 2011-11-01 The Aerospace Corporation Systems and methods for stabilizing laser frequency based on an isoclinic point in the absorption spectrum of a gas
US8213018B2 (en) 2010-11-10 2012-07-03 Honeywell International Inc. Constant optical power sensor using a light source current servo combined with digital demodulation intensity suppression for radiation and vibration insensitivity in a fiber optic gyroscope
FR2991214B1 (fr) * 2012-06-01 2014-06-13 Snecma Procede de percage d'une piece par impulsions laser
US20160327365A1 (en) * 2013-07-15 2016-11-10 OptiFlow, Inc. Holographic weapon sight with laser management system
US8873061B1 (en) 2013-09-05 2014-10-28 The Aerospace Corporation Systems and methods for measuring a physical parameter of a substance based on an isoclinic point in the absorption spectrum of another substance
CN103490269B (zh) * 2013-09-18 2016-04-20 青岛海信宽带多媒体技术有限公司 基于热电制冷器的温度控制电路
CN103682979B (zh) * 2013-12-26 2016-08-17 中国科学院半导体研究所 窄线宽稳频半导体激光器
GB2525187B (en) * 2014-04-14 2020-02-12 Univ Cranfield Wavelength control of laser diodes
US9491824B2 (en) * 2014-08-05 2016-11-08 Svetlana Eden Method and apparatus for precise temperature brightness compensation of LED
JP2016100380A (ja) 2014-11-19 2016-05-30 富士通オプティカルコンポーネンツ株式会社 レーザ装置、及び、光送信機
JP6934129B2 (ja) * 2015-03-19 2021-09-15 ソニーグループ株式会社 半導体発光素子組立体の駆動方法
US11325273B1 (en) * 2020-01-16 2022-05-10 Blazor, LLC Adjustable head razor
CN112968353B (zh) * 2021-02-03 2022-03-08 吉林大学 一种用于超短脉冲激光器泵浦源的驱动系统的驱动方法
CN113839306B (zh) * 2021-11-24 2022-02-15 中国科学院苏州纳米技术与纳米仿生研究所 基于TiS3的垂直腔面激光器及其制作方法

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JPS5690583A (en) * 1979-12-21 1981-07-22 Ricoh Co Ltd Stabilizing device of output for semiconductor laser
JPS5934684A (ja) * 1982-08-20 1984-02-25 Hitachi Cable Ltd 半導体レ−ザダイオ−ドの特性安定化回路
JPS59146069A (ja) * 1983-02-08 1984-08-21 Canon Inc 光源安定化装置
US4583228A (en) * 1983-11-21 1986-04-15 At&T Bell Laboratories Frequency stabilization of lasers
JPH0728077B2 (ja) * 1986-04-16 1995-03-29 株式会社トプコン 半導体レ−ザ−の発振周波数・発振出力安定化装置
JPS63143888A (ja) * 1986-12-08 1988-06-16 Yokogawa Electric Corp レ−ザ発生装置の制御方法
JPS6474780A (en) * 1987-09-17 1989-03-20 Copal Electronics Stabilization of semiconductor laser light
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JPH01238083A (ja) * 1988-03-18 1989-09-22 Nkk Corp 半導体レーザの発振波長安定方法
JPH01251681A (ja) * 1988-03-25 1989-10-06 Topcon Corp 半導体レーザーの発振周波数・発振出力安定化装置
IT1219165B (it) * 1988-03-31 1990-05-03 Cselt Centro Studi Lab Telecom Procedimento e dispositivo per il controllo automatico di frequenza di laser a semiconduttore
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GB2224374A (en) * 1988-08-24 1990-05-02 Plessey Co Plc Temperature control of light-emitting devices
JPH02112295A (ja) * 1988-10-21 1990-04-24 Yokogawa Electric Corp 半導体レーザ光源装置用恒温槽
JP3407893B2 (ja) * 1991-05-27 2003-05-19 パイオニア株式会社 半導体レーザ制御装置
US5265115A (en) * 1991-08-30 1993-11-23 Hoya Corporation Solid-state laser device having a feedback loop
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Also Published As

Publication number Publication date
US5392303A (en) 1995-02-21
EP0618653A2 (de) 1994-10-05
EP0618653B1 (de) 1997-07-16
EP0618653A3 (de) 1995-04-12
DE69404190T2 (de) 1998-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee