DE69329376D1 - Verfahren zur Herstellung einer SOI-Transistor-DRAM - Google Patents

Verfahren zur Herstellung einer SOI-Transistor-DRAM

Info

Publication number
DE69329376D1
DE69329376D1 DE69329376T DE69329376T DE69329376D1 DE 69329376 D1 DE69329376 D1 DE 69329376D1 DE 69329376 T DE69329376 T DE 69329376T DE 69329376 T DE69329376 T DE 69329376T DE 69329376 D1 DE69329376 D1 DE 69329376D1
Authority
DE
Germany
Prior art keywords
making
soi transistor
transistor dram
dram
soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69329376T
Other languages
English (en)
Other versions
DE69329376T2 (de
Inventor
Kyucharn Park
Yeseung Lee
Cheonsu Ban
Kyungwook Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69329376D1 publication Critical patent/DE69329376D1/de
Application granted granted Critical
Publication of DE69329376T2 publication Critical patent/DE69329376T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE69329376T 1992-12-30 1993-12-23 Verfahren zur Herstellung einer SOI-Transistor-DRAM Expired - Fee Related DE69329376T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR920026778 1992-12-30

Publications (2)

Publication Number Publication Date
DE69329376D1 true DE69329376D1 (de) 2000-10-12
DE69329376T2 DE69329376T2 (de) 2001-01-04

Family

ID=19347910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329376T Expired - Fee Related DE69329376T2 (de) 1992-12-30 1993-12-23 Verfahren zur Herstellung einer SOI-Transistor-DRAM

Country Status (6)

Country Link
US (3) US5968840A (de)
EP (1) EP0606758B1 (de)
JP (1) JPH06232367A (de)
CN (1) CN1036227C (de)
DE (1) DE69329376T2 (de)
TW (1) TW278237B (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3802942B2 (ja) * 1994-09-01 2006-08-02 株式会社ルネサステクノロジ 半導体装置、半導体記憶装置および半導体記憶装置の製造方法
US6919260B1 (en) 1995-11-21 2005-07-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate having shallow trench isolation
TW389999B (en) * 1995-11-21 2000-05-11 Toshiba Corp Substrate having shallow trench isolation and method of manufacturing the same
JPH1197377A (ja) * 1997-09-24 1999-04-09 Nec Corp Ｓｏｉ基板の製造方法
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
TW421980B (en) * 1997-12-22 2001-02-11 Citizen Watch Co Ltd Electronic component device, its manufacturing process, and collective circuits
KR100282216B1 (ko) * 1998-01-15 2001-02-15 윤종용 소이 디램 및 그의 제조 방법
KR100268419B1 (ko) * 1998-08-14 2000-10-16 윤종용 고집적 반도체 메모리 장치 및 그의 제조 방법
US6423596B1 (en) * 1998-09-29 2002-07-23 Texas Instruments Incorporated Method for two-sided fabrication of a memory array
US6214694B1 (en) * 1998-11-17 2001-04-10 International Business Machines Corporation Process of making densely patterned silicon-on-insulator (SOI) region on a wafer
US6261876B1 (en) 1999-11-04 2001-07-17 International Business Machines Corporation Planar mixed SOI-bulk substrate for microelectronic applications
US6291858B1 (en) 2000-01-03 2001-09-18 International Business Machines Corporation Multistack 3-dimensional high density semiconductor device and method for fabrication
US6544837B1 (en) * 2000-03-17 2003-04-08 International Business Machines Corporation SOI stacked DRAM logic
US6465331B1 (en) * 2000-08-31 2002-10-15 Micron Technology, Inc. DRAM fabricated on a silicon-on-insulator (SOI) substrate having bi-level digit lines
US6583462B1 (en) 2000-10-31 2003-06-24 International Business Machines Corporation Vertical DRAM having metallic node conductor
US6706608B2 (en) 2001-02-28 2004-03-16 Micron Technology, Inc. Memory cell capacitors having an over/under configuration
TW540154B (en) * 2001-06-04 2003-07-01 Promos Technologies Inc Deep trench capacitor structure and its manufacturing method
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
TWI230392B (en) * 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
JP4322453B2 (ja) * 2001-09-27 2009-09-02 株式会社東芝 半導体装置およびその製造方法
EP1357603A3 (de) 2002-04-18 2004-01-14 Innovative Silicon SA Halbleiterbauelement
EP1355316B1 (de) 2002-04-18 2007-02-21 Innovative Silicon SA Datenspeichergerät sowie Verfahren zum Auffrischen der auf einem solchen Gerät gespeicherten Daten
US20040228168A1 (en) 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
US7085153B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US6912150B2 (en) 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US7335934B2 (en) 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
US7184298B2 (en) 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US20050255666A1 (en) * 2004-05-11 2005-11-17 Miradia Inc. Method and structure for aligning mechanical based device to integrated circuits
KR100647482B1 (ko) * 2004-09-16 2006-11-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
US7251164B2 (en) 2004-11-10 2007-07-31 Innovative Silicon S.A. Circuitry for and method of improving statistical distribution of integrated circuits
US7301838B2 (en) * 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7301803B2 (en) 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
US20070023833A1 (en) * 2005-07-28 2007-02-01 Serguei Okhonin Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US20070085140A1 (en) * 2005-10-19 2007-04-19 Cedric Bassin One transistor memory cell having strained electrically floating body region, and method of operating same
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US7542345B2 (en) 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
WO2007128738A1 (en) 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 ｄｒａｍ 트랜지스터
WO2009031052A2 (en) 2007-03-29 2009-03-12 Innovative Silicon S.A. Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
WO2010102106A2 (en) 2009-03-04 2010-09-10 Innovative Silicon Isi Sa Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
WO2010114890A1 (en) 2009-03-31 2010-10-07 Innovative Silicon Isi Sa Techniques for providing a semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
CN102812552B (zh) 2010-03-15 2015-11-25 美光科技公司 半导体存储器装置及用于对半导体存储器装置进行偏置的方法
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
CN101908564A (zh) * 2010-06-11 2010-12-08 上海宏力半导体制造有限公司 基于体硅的电容及其制造方法
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
CN105742364A (zh) * 2016-04-12 2016-07-06 中山大学 一种抑制有源沟道区光致漏电流产生的mos管及应用

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682800B2 (ja) * 1985-04-16 1994-10-19 株式会社東芝 半導体記憶装置
JPS6235668A (ja) * 1985-08-09 1987-02-16 Nec Corp 半導体記憶装置
JPH0821682B2 (ja) * 1987-04-24 1996-03-04 株式会社日立製作所 半導体装置の製造方法
US5071783A (en) * 1987-06-17 1991-12-10 Fujitsu Limited Method of producing a dynamic random access memory device
JP2530175B2 (ja) * 1987-09-09 1996-09-04 富士通株式会社 半導体記憶装置の製造方法
DE68920365T2 (de) * 1988-06-28 1995-06-08 Mitsubishi Material Silicon Verfahren zur Polierung eines Halbleiter-Plättchens.
JP2743391B2 (ja) * 1988-08-25 1998-04-22 ソニー株式会社 半導体メモリの製造方法
DE3929144A1 (de) * 1989-09-02 1991-03-07 Behringwerke Ag Nachweis von influenza-a-virus durch polymerase-kettenreaktion (pcr) nach reverser transkription eines bereichs des viralen haemagglutinin-gens
JPH03171663A (ja) * 1989-11-29 1991-07-25 Toshiba Corp 半導体記憶装置およびその製造方法
JPH03173175A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd 半導体装置
JPH03190164A (ja) * 1989-12-19 1991-08-20 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US4992135A (en) * 1990-07-24 1991-02-12 Micron Technology, Inc. Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
JP2969865B2 (ja) * 1990-08-28 1999-11-02 日本電気株式会社 ダイナミック型半導体記憶装置及びその製造方法
JP2940169B2 (ja) * 1990-12-17 1999-08-25 ソニー株式会社 半導体メモリ装置
KR930006732B1 (ko) * 1991-05-08 1993-07-23 재단법인 한국전자통신연구소 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법
JPH04342166A (ja) * 1991-05-17 1992-11-27 Mitsubishi Electric Corp 半導体装置
JP3141486B2 (ja) * 1992-01-27 2001-03-05 ソニー株式会社 半導体装置
JP3197064B2 (ja) * 1992-07-17 2001-08-13 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0606758B1 (de) 2000-09-06
US5939745A (en) 1999-08-17
EP0606758A1 (de) 1994-07-20
CN1090672A (zh) 1994-08-10
TW278237B (de) 1996-06-11
US5631186A (en) 1997-05-20
CN1036227C (zh) 1997-10-22
DE69329376T2 (de) 2001-01-04
US5968840A (en) 1999-10-19
JPH06232367A (ja) 1994-08-19

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