DE69325119D1 - Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren - Google Patents

Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren

Info

Publication number
DE69325119D1
DE69325119D1 DE69325119T DE69325119T DE69325119D1 DE 69325119 D1 DE69325119 D1 DE 69325119D1 DE 69325119 T DE69325119 T DE 69325119T DE 69325119 T DE69325119 T DE 69325119T DE 69325119 D1 DE69325119 D1 DE 69325119D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
access method
clock synchronized
synchronized semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69325119T
Other languages
English (en)
Other versions
DE69325119T2 (de
Inventor
Haruki Toda
Hitoshi Kuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69325119D1 publication Critical patent/DE69325119D1/de
Publication of DE69325119T2 publication Critical patent/DE69325119T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
DE69325119T 1992-03-19 1993-03-17 Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren Expired - Lifetime DE69325119T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6384492 1992-03-19

Publications (2)

Publication Number Publication Date
DE69325119D1 true DE69325119D1 (de) 1999-07-08
DE69325119T2 DE69325119T2 (de) 1999-11-04

Family

ID=13241051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325119T Expired - Lifetime DE69325119T2 (de) 1992-03-19 1993-03-17 Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren

Country Status (4)

Country Link
US (3) US5818793A (de)
EP (1) EP0561370B1 (de)
KR (1) KR960009248B1 (de)
DE (1) DE69325119T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249481B1 (en) 1991-10-15 2001-06-19 Kabushiki Kaisha Toshiba Semiconductor memory device
EP0561370B1 (de) * 1992-03-19 1999-06-02 Kabushiki Kaisha Toshiba Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren
US6310821B1 (en) 1998-07-10 2001-10-30 Kabushiki Kaisha Toshiba Clock-synchronous semiconductor memory device and access method thereof
JP3579461B2 (ja) 1993-10-15 2004-10-20 株式会社ルネサステクノロジ データ処理システム及びデータ処理装置
US5923829A (en) 1994-08-25 1999-07-13 Ricoh Company, Ltd. Memory system, memory control system and image processing system
US5796673A (en) 1994-10-06 1998-08-18 Mosaid Technologies Incorporated Delay locked loop implementation in a synchronous dynamic random access memory
US6810449B1 (en) 1995-10-19 2004-10-26 Rambus, Inc. Protocol for communication with dynamic memory
US6035369A (en) 1995-10-19 2000-03-07 Rambus Inc. Method and apparatus for providing a memory with write enable information
US6470405B2 (en) 1995-10-19 2002-10-22 Rambus Inc. Protocol for communication with dynamic memory
US6209071B1 (en) 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
JP3406790B2 (ja) 1996-11-25 2003-05-12 株式会社東芝 データ転送システム及びデータ転送方法
JP3523004B2 (ja) * 1997-03-19 2004-04-26 株式会社東芝 同期式ランダムアクセスメモリ
KR100481828B1 (ko) * 1997-05-19 2005-07-05 삼성전자주식회사 가변어드레스제어장치를이용한메모리제어방법
US6266379B1 (en) 1997-06-20 2001-07-24 Massachusetts Institute Of Technology Digital transmitter with equalization
JPH1116349A (ja) * 1997-06-26 1999-01-22 Mitsubishi Electric Corp 同期型半導体記憶装置
US6401167B1 (en) 1997-10-10 2002-06-04 Rambus Incorporated High performance cost optimized memory
WO1999019805A1 (en) 1997-10-10 1999-04-22 Rambus Incorporated Method and apparatus for two step memory write operations
US6147546A (en) * 1998-03-11 2000-11-14 International Business Machines Corporation Zero volt/zero current fuse arrangement
JP4060442B2 (ja) * 1998-05-28 2008-03-12 富士通株式会社 メモリデバイス
JP4540137B2 (ja) * 1998-07-24 2010-09-08 ルネサスエレクトロニクス株式会社 同期型半導体記憶装置
EP1122739A3 (de) 2000-01-31 2003-12-17 STMicroelectronics S.r.l. Beschleunigte Ubertragungserzeugung
US6624679B2 (en) 2000-01-31 2003-09-23 Stmicroelectronics S.R.L. Stabilized delay circuit
EP1122733A1 (de) 2000-01-31 2001-08-08 STMicroelectronics S.r.l. Interne Regeneration eines Adressfreigabesignals (ALE) von einem Steuerprotokoll eines verschachtelten Burst-Speichers sowie entsprechende Schaltung
EP1122887A1 (de) 2000-01-31 2001-08-08 STMicroelectronics S.r.l. Vorladeschaltung für einen Ausgangspuffer
EP1122737A1 (de) 2000-01-31 2001-08-08 STMicroelectronics S.r.l. Schaltung zur Steuerung von Datenströmenübertragung aus mehrerer Quellen eines Systems
US6452864B1 (en) 2000-01-31 2002-09-17 Stmicroelectonics S.R.L. Interleaved memory device for sequential access synchronous reading with simplified address counters
DE60019081D1 (de) 2000-01-31 2005-05-04 St Microelectronics Srl Verschachtelter Burst-Speicher mit Burst-Zugriff bei synchronen Lesezyklen, wobei die beiden untergeordneten Speicherfelder unabhängig lesbar sind mit wahlfreiem Zugriff während asynchroner Lesezyklen
EP1122736B1 (de) 2000-01-31 2009-10-28 STMicroelectronics S.r.l. Erzeugung eines Addressenübergangssignals (ATD) für eine synchrone Speicheranordnung
EP1122735B1 (de) 2000-01-31 2010-09-01 STMicroelectronics Srl Verschachtelter Datenpfad und Ausgabesteuerungsarchitektur für einen verschachtelten Speicher sowie Impulsgeber zum Ausgeben von gelesenen Daten
DE60011035T2 (de) 2000-03-02 2004-09-16 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur logischen Aufteilung einer nichtflüchtigen Speichermatrix
JP4741122B2 (ja) * 2001-09-07 2011-08-03 富士通セミコンダクター株式会社 半導体装置及びデータ転送方法
KR100520178B1 (ko) * 2003-03-28 2005-10-10 주식회사 하이닉스반도체 반도체 메모리 장치의 입력 버퍼

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330852A (en) * 1979-11-23 1982-05-18 Texas Instruments Incorporated Semiconductor read/write memory array having serial access
US4862419A (en) * 1983-11-10 1989-08-29 Advanced Micro Devices, Inc. High speed pointer based first-in-first-out memory
DE3543911A1 (de) * 1984-12-14 1986-06-26 Mitsubishi Denki K.K., Tokio/Tokyo Digitale verzoegerungseinheit
US4680738A (en) * 1985-07-30 1987-07-14 Advanced Micro Devices, Inc. Memory with sequential mode
JPH07114074B2 (ja) * 1985-12-18 1995-12-06 株式会社日立製作所 半導体記憶装置
JPS62223891A (ja) * 1986-03-26 1987-10-01 Hitachi Ltd 半導体記憶装置
JP2587229B2 (ja) * 1987-03-11 1997-03-05 日本テキサス・インスツルメンツ株式会社 アービタ回路
JPH0612609B2 (ja) * 1987-03-27 1994-02-16 株式会社東芝 半導体メモリ
JPS63272191A (ja) * 1987-04-30 1988-11-09 Toshiba Corp 時間軸変動補正回路
JPH01120660A (ja) * 1987-11-04 1989-05-12 Nec Corp マイクロコンピュータ装置
DE3738407A1 (de) * 1987-11-12 1989-05-24 Henkel Kgaa Sebosuppressive topische zubereitungen
US5054000A (en) * 1988-02-19 1991-10-01 Sony Corporation Static random access memory device having a high speed read-out and flash-clear functions
US5148523A (en) * 1988-11-29 1992-09-15 Solbourne Computer, Inc. Dynamic video RAM incorporationg on chip line modification
DE68929482T2 (de) * 1988-11-29 2004-06-24 Matsushita Electric Industrial Co., Ltd., Kadoma Integrierter Schaltkreis mit synchronem Halbleiterspeicher, ein Verfahren zum Zugriff auf den besagten Speicher sowie ein System, das einen solchen Speicher beinhaltet
US5142637A (en) * 1988-11-29 1992-08-25 Solbourne Computer, Inc. Dynamic video RAM incorporating single clock random port control
US5148524A (en) * 1988-11-29 1992-09-15 Solbourne Computer, Inc. Dynamic video RAM incorporating on chip vector/image mode line modification
CA2010122A1 (en) * 1989-06-21 1990-12-21 Makoto Sakamoto Integrated circuit including programmable circuit
KR100214435B1 (ko) * 1990-07-25 1999-08-02 사와무라 시코 동기식 버스트 엑세스 메모리
JP2740063B2 (ja) * 1990-10-15 1998-04-15 株式会社東芝 半導体記憶装置
TW198135B (de) * 1990-11-20 1993-01-11 Oki Electric Ind Co Ltd
US5235545A (en) * 1991-03-29 1993-08-10 Micron Technology, Inc. Memory array write addressing circuit for simultaneously addressing selected adjacent memory cells
JP3992757B2 (ja) * 1991-04-23 2007-10-17 テキサス インスツルメンツ インコーポレイテツド マイクロプロセッサと同期するメモリ、及びデータプロセッサ、同期メモリ、周辺装置とシステムクロックを含むシステム
US5305277A (en) * 1991-04-24 1994-04-19 International Business Machines Corporation Data processing apparatus having address decoder supporting wide range of operational frequencies
JPH0574167A (ja) * 1991-09-17 1993-03-26 Nec Corp 半導体記憶装置
KR950000504B1 (ko) * 1992-01-31 1995-01-24 삼성전자 주식회사 복수개의 로우 어드레스 스트로브 신호를 가지는 반도체 메모리 장치
EP0561370B1 (de) * 1992-03-19 1999-06-02 Kabushiki Kaisha Toshiba Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren
JP2740097B2 (ja) * 1992-03-19 1998-04-15 株式会社東芝 クロック同期型半導体記憶装置およびそのアクセス方法
JP2830594B2 (ja) * 1992-03-26 1998-12-02 日本電気株式会社 半導体メモリ装置

Also Published As

Publication number Publication date
DE69325119T2 (de) 1999-11-04
US5818793A (en) 1998-10-06
EP0561370A2 (de) 1993-09-22
EP0561370B1 (de) 1999-06-02
US5986968A (en) 1999-11-16
KR930020279A (ko) 1993-10-19
KR960009248B1 (en) 1996-07-16
US5798979A (en) 1998-08-25
EP0561370A3 (de) 1994-12-21

Similar Documents

Publication Publication Date Title
DE69325119D1 (de) Taktsynchronisierter Halbleiterspeicheranordnung und Zugriffsverfahren
DE69419469D1 (de) Halbleiterbauelement und Halbleiterspeichervorrichtung
EP0469934A3 (en) Semiconductor memory device and method of operation thereof
DE69324127D1 (de) Halbleiterspeicheranordnung und Datenlöschungsverfahren dafür
DE69323127T2 (de) Halbleitervorrichtung und Herstellungsverfahren
DE69325343T2 (de) Halbleiteranordnung und Herstellungsverfahren dafür
KR890015408A (ko) 반도체 기억장치 및 그 제조방법
KR900019240A (ko) 반도체기억장치 및 그 제조방법
DE69322311D1 (de) Halbleiterspeicheranordnung
DE69322747T2 (de) Halbleiterspeicheranordnung
DE69322725T2 (de) Halbleiterspeicheranordnung
KR940011024U (ko) 반도체 메모리 장치
DE69840486D1 (de) Halbleiterspeicher und Zugriffsverfahren hierauf
SG43351A1 (en) Synchronous lsi memory device
KR910010721A (ko) 반도체 기억장치 및 그 제조방법
DE69326494D1 (de) Halbleiterspeicheranordnung
DE69332966D1 (de) Halbleiterspeicherbauelement
DE69421108D1 (de) Halbleiterspeicheranordnung und Speicher-Initialisierungsverfahren
GB2247105B (en) Highly integrated semiconductor memory device and method of manufacture therefor
DE69322436D1 (de) Halbleiterspeicheranordnung
DE69324470T2 (de) Halbleiterspeicheranordnung
DE69325132D1 (de) Halbleiterspeicherbauelement
DE69421480D1 (de) Halbleiterspeicheranordnung und Betriebsverfahren dafür
DE69321544D1 (de) Halbleiterspeicheranordnung
DE69326108D1 (de) Halbleiterspeicheranordung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition