DE69223711T2 - Speicherzelle - Google Patents

Speicherzelle

Info

Publication number
DE69223711T2
DE69223711T2 DE69223711T DE69223711T DE69223711T2 DE 69223711 T2 DE69223711 T2 DE 69223711T2 DE 69223711 T DE69223711 T DE 69223711T DE 69223711 T DE69223711 T DE 69223711T DE 69223711 T2 DE69223711 T2 DE 69223711T2
Authority
DE
Germany
Prior art keywords
read
transistor
row
gate electrode
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223711T
Other languages
English (en)
Other versions
DE69223711D1 (de
Inventor
Thomas Jefferson Runaldue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69223711D1 publication Critical patent/DE69223711D1/de
Publication of DE69223711T2 publication Critical patent/DE69223711T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE69223711T 1991-09-16 1992-08-03 Speicherzelle Expired - Fee Related DE69223711T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/760,655 US5216636A (en) 1991-09-16 1991-09-16 Cmos memory cell

Publications (2)

Publication Number Publication Date
DE69223711D1 DE69223711D1 (de) 1998-02-05
DE69223711T2 true DE69223711T2 (de) 1998-08-06

Family

ID=25059771

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223711T Expired - Fee Related DE69223711T2 (de) 1991-09-16 1992-08-03 Speicherzelle

Country Status (7)

Country Link
US (1) US5216636A (de)
EP (1) EP0533331B1 (de)
JP (1) JPH05307887A (de)
KR (1) KR930006933A (de)
AT (1) ATE161652T1 (de)
DE (1) DE69223711T2 (de)
TW (1) TW249851B (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343406A (en) * 1989-07-28 1994-08-30 Xilinx, Inc. Distributed memory architecture for a configurable logic array and method for using distributed memory
JP3153568B2 (ja) * 1991-07-03 2001-04-09 株式会社東芝 マルチポートｒａｍ用メモリセル及びマルチポートｒａｍ
JP2667941B2 (ja) * 1992-09-17 1997-10-27 三菱電機株式会社 メモリセル回路
JPH0757469A (ja) * 1993-08-11 1995-03-03 Nec Corp メモリ回路
US6198305B1 (en) 1998-03-24 2001-03-06 Cypress Semiconductor Corp. Reduced area product-term array
US5991224A (en) * 1998-05-22 1999-11-23 International Business Machines Corporation Global wire management apparatus and method for a multiple-port random access memory
US5991208A (en) * 1998-05-22 1999-11-23 International Business Machines Corporation Write multiplexer apparatus and method for multiple write port programmable memory
US6055177A (en) * 1998-06-26 2000-04-25 Cypress Semiconductor Corp. Memory cell
JP2002050183A (ja) * 2000-07-31 2002-02-15 Mitsubishi Electric Corp 半導体記憶装置
JP2003030988A (ja) 2001-07-12 2003-01-31 Mitsubishi Electric Corp 半導体記憶回路
US20040004251A1 (en) * 2002-07-08 2004-01-08 Madurawe Raminda U. Insulated-gate field-effect thin film transistors
US6992503B2 (en) * 2002-07-08 2006-01-31 Viciciv Technology Programmable devices with convertibility to customizable devices
US7129744B2 (en) * 2003-10-23 2006-10-31 Viciciv Technology Programmable interconnect structures
US7673273B2 (en) 2002-07-08 2010-03-02 Tier Logic, Inc. MPGA products based on a prototype FPGA
US7112994B2 (en) 2002-07-08 2006-09-26 Viciciv Technology Three dimensional integrated circuits
US8643162B2 (en) 2007-11-19 2014-02-04 Raminda Udaya Madurawe Pads and pin-outs in three dimensional integrated circuits
US7812458B2 (en) * 2007-11-19 2010-10-12 Tier Logic, Inc. Pad invariant FPGA and ASIC devices
US7030651B2 (en) * 2003-12-04 2006-04-18 Viciciv Technology Programmable structured arrays
KR20040027779A (ko) * 2004-03-04 2004-04-01 성용진 의자용 방석시트
US7489164B2 (en) * 2004-05-17 2009-02-10 Raminda Udaya Madurawe Multi-port memory devices
US7635988B2 (en) * 2007-11-19 2009-12-22 Tier Logic, Inc. Multi-port thin-film memory devices
US20090128189A1 (en) * 2007-11-19 2009-05-21 Raminda Udaya Madurawe Three dimensional programmable devices
US7602213B2 (en) * 2007-12-26 2009-10-13 Tier Logic, Inc. Using programmable latch to implement logic
US7795913B2 (en) * 2007-12-26 2010-09-14 Tier Logic Programmable latch based multiplier
US7573294B2 (en) * 2007-12-26 2009-08-11 Tier Logic, Inc. Programmable logic based latches and shift registers
US7573293B2 (en) * 2007-12-26 2009-08-11 Tier Logic, Inc. Programmable logic based latches and shift registers
CN101359507B (zh) * 2008-06-20 2011-03-30 清华大学 基于低压工艺的非挥发性存储器单元及阵列和操作方法
US8230375B2 (en) 2008-09-14 2012-07-24 Raminda Udaya Madurawe Automated metal pattern generation for integrated circuits
TWI571058B (zh) * 2011-05-18 2017-02-11 半導體能源研究所股份有限公司 半導體裝置與驅動半導體裝置之方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580245A (en) * 1983-07-28 1986-04-01 Sperry Corporation Complementary metal oxide semiconductor dual port random access memory cell
US4660177A (en) * 1985-01-14 1987-04-21 American Telephone And Telegraph Company Dual port complementary memory
JPH0734311B2 (ja) * 1986-01-21 1995-04-12 株式会社東芝 メモリセル
JPH07111822B2 (ja) * 1986-03-07 1995-11-29 株式会社日立製作所 半導体記憶装置
US4995001A (en) * 1988-10-31 1991-02-19 International Business Machines Corporation Memory cell and read circuit
US4933899A (en) * 1989-02-01 1990-06-12 Cypress Semiconductor Bi-CMOS semiconductor memory cell
US5023844A (en) * 1990-02-28 1991-06-11 Intel Corporation Six-way access ported RAM array cell
US5003509A (en) * 1990-03-27 1991-03-26 National Semiconductor Corp. Multi-port, bipolar-CMOS memory cell

Also Published As

Publication number Publication date
TW249851B (de) 1995-06-21
JPH05307887A (ja) 1993-11-19
KR930006933A (ko) 1993-04-22
EP0533331B1 (de) 1997-12-29
EP0533331A2 (de) 1993-03-24
DE69223711D1 (de) 1998-02-05
ATE161652T1 (de) 1998-01-15
US5216636A (en) 1993-06-01
EP0533331A3 (en) 1995-05-17

Similar Documents

Publication Publication Date Title
TW249851B (de)
EP0090590B1 (de) Halbleiter-Speichervorrichtung
JPS6466899A (en) Memory cell
EP0367703A3 (de) Speicherzelle und Leseschaltung
TW364995B (en) A memory cell
KR910009442B1 (ko) 반도체 기억장치
JPS6363197A (ja) 半導体記憶装置
EP0031488A3 (de) Speicherzelle und ihre Verwendung in einem Direktzugriffspeichermatrixsystem
KR930017024A (ko) 판독 및 판독/기록 포트를 갖는 듀얼 포트 메모리
US5561638A (en) Multi-port SRAM core array
IT9009454A1 (it) Cella di memoria statica ad accesso casuale a quattro transistori
US5490111A (en) Semiconductor integrated circuit device
US4380055A (en) Static RAM memory cell
KR970071827A (ko) 저 전압, 저 전력 스태틱 랜덤 억세스 메모리 셀
KR950034795A (ko) 스태틱램 메모리셀
JPH08321176A (ja) 半導体メモリセル
JP2621411B2 (ja) 不揮発性半導体記憶装置
JPS6396799A (ja) 連想メモリ
EP0169351A3 (de) Chip mit integrierter Schaltung in Form einer Gate-Anordnung
GB1220000A (en) Associative memory
KR940000894B1 (ko) S램용 메모리셀
KR100911987B1 (ko) 에스램 셀
JPH0770224B2 (ja) 同期式スタティックランダムアクセスメモリ
Wu et al. Single-Port SRAM Cell with lower leakage current in standby mode
JPH0262788A (ja) マルチポートメモリーセル

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee