DE69223706T2 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE69223706T2
DE69223706T2 DE69223706T DE69223706T DE69223706T2 DE 69223706 T2 DE69223706 T2 DE 69223706T2 DE 69223706 T DE69223706 T DE 69223706T DE 69223706 T DE69223706 T DE 69223706T DE 69223706 T2 DE69223706 T2 DE 69223706T2
Authority
DE
Germany
Prior art keywords
layer
inas
semiconductor compound
semiconductor
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69223706T
Other languages
German (de)
English (en)
Other versions
DE69223706D1 (de
Inventor
Kazuhiro Nagase
Ichiro Shibasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Publication of DE69223706D1 publication Critical patent/DE69223706D1/de
Application granted granted Critical
Publication of DE69223706T2 publication Critical patent/DE69223706T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3222—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides

Landscapes

  • Junction Field-Effect Transistors (AREA)
DE69223706T 1991-03-28 1992-03-27 Feldeffekttransistor Expired - Lifetime DE69223706T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6498791 1991-03-28
JP6498891 1991-03-28
JP9015191 1991-04-22
JP19241091 1991-08-01
PCT/JP1992/000379 WO1992017908A1 (fr) 1991-03-28 1992-03-27 Transistor a effet de champ

Publications (2)

Publication Number Publication Date
DE69223706D1 DE69223706D1 (de) 1998-02-05
DE69223706T2 true DE69223706T2 (de) 1998-08-20

Family

ID=27464518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223706T Expired - Lifetime DE69223706T2 (de) 1991-03-28 1992-03-27 Feldeffekttransistor

Country Status (5)

Country Link
US (1) US5430310A (https=)
EP (1) EP0531550B1 (https=)
KR (1) KR0124131B1 (https=)
DE (1) DE69223706T2 (https=)
WO (1) WO1992017908A1 (https=)

Families Citing this family (33)

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JP3216354B2 (ja) * 1993-08-11 2001-10-09 ソニー株式会社 オーミック電極およびその形成方法ならびに半導体装置
US5548140A (en) * 1995-06-06 1996-08-20 Hughes Aircraft Company High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
US5663583A (en) * 1995-06-06 1997-09-02 Hughes Aircraft Company Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate
JPH0936133A (ja) * 1995-07-14 1997-02-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH09129865A (ja) * 1995-11-06 1997-05-16 Mitsubishi Electric Corp 半導体装置
US5770868A (en) * 1995-11-08 1998-06-23 Martin Marietta Corporation GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets
US6448648B1 (en) * 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
US5798540A (en) * 1997-04-29 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with InAlAsSb/AlSb barrier
JP3141838B2 (ja) * 1998-03-12 2001-03-07 日本電気株式会社 電界効果トランジスタ
SE0000115D0 (sv) * 2000-01-17 2000-01-17 Abb Ab A semiconductor device
JP2002208600A (ja) * 2001-01-10 2002-07-26 Fujitsu Quantum Devices Ltd 半導体装置
WO2003032410A1 (en) * 2001-10-01 2003-04-17 Asahi Kasei Microsystems Co., Ltd. Hall device and magnetic sensor
CN100511748C (zh) * 2002-01-15 2009-07-08 旭化成电子材料元件株式会社 霍尔元件
JP2004103656A (ja) * 2002-09-05 2004-04-02 Sony Corp 半導体装置及び半導体装置の製造方法
US6830953B1 (en) * 2002-09-17 2004-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Suppression of MOSFET gate leakage current
US6825506B2 (en) 2002-11-27 2004-11-30 Intel Corporation Field effect transistor and method of fabrication
US6888179B2 (en) 2003-04-17 2005-05-03 Bae Systems Information And Electronic Systems Integration Inc GaAs substrate with Sb buffering for high in devices
TWI222750B (en) * 2003-04-25 2004-10-21 Univ Nat Cheng Kung Voltage adjustable multi-stage extrinsic transconductance amplification HEMT
US7633083B2 (en) * 2004-03-10 2009-12-15 Stc.Unm Metamorphic buffer on small lattice constant substrates
JP2006303393A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
WO2007069680A1 (ja) * 2005-12-16 2007-06-21 Asahi Kasei Emd Corporation 位置検出装置
US20080054300A1 (en) * 2006-06-30 2008-03-06 Philip Gene Nikkel Body contact structure and method for the reduction of drain lag and gate lag in field effect transistors
US7518165B2 (en) * 2006-09-14 2009-04-14 Teledyne Licensing, Llc Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs
US7808016B2 (en) * 2006-09-14 2010-10-05 Teledyne Licensing, Llc Heterogeneous integration of low noise amplifiers with power amplifiers or switches
US7820541B2 (en) * 2006-09-14 2010-10-26 Teledyne Licensing, Llc Process for forming low defect density heterojunctions
JP4894576B2 (ja) * 2007-03-16 2012-03-14 三菱電機株式会社 半導体光素子の製造方法
US7989842B2 (en) * 2009-02-27 2011-08-02 Teledyne Scientific & Imaging, Llc Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity
JP2010272689A (ja) * 2009-05-21 2010-12-02 Renesas Electronics Corp 電界効果トランジスタ
CN103000692A (zh) * 2011-09-14 2013-03-27 鸿富锦精密工业（深圳）有限公司 薄膜晶体管结构及其制造方法
US9570609B2 (en) 2013-11-01 2017-02-14 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US9484423B2 (en) 2013-11-01 2016-11-01 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet III-V channel FETs
US9355920B2 (en) * 2014-03-10 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices and FinFET devices, and FinFET devices
US9647098B2 (en) 2014-07-21 2017-05-09 Samsung Electronics Co., Ltd. Thermionically-overdriven tunnel FETs and methods of fabricating the same

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CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
JPS5953714B2 (ja) * 1979-12-28 1984-12-26 富士通株式会社 半導体装置
JPS5953714A (ja) * 1982-09-13 1984-03-28 Touyoubou Pet Koode Kk 熱寸法安定性のすぐれた合成繊維の製造方法
JPS605572A (ja) * 1983-06-24 1985-01-12 Agency Of Ind Science & Technol 高速半導体デバイスの製造方法
JPS60144979A (ja) * 1984-01-07 1985-07-31 Agency Of Ind Science & Technol 半導体デバイス
JP2668354B2 (ja) * 1984-08-25 1997-10-27 富士通株式会社 電界効果型半導体装置
JPS61131565A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 電界効果型半導体装置
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
JP2621854B2 (ja) * 1985-05-31 1997-06-18 株式会社東芝 高移動度トランジスタ
JPS63272080A (ja) * 1987-04-30 1988-11-09 Fujitsu Ltd 半導体装置
JPH025439A (ja) * 1988-06-22 1990-01-10 Nec Corp 半導体基板
JPH02229438A (ja) * 1989-03-02 1990-09-12 Sumitomo Electric Ind Ltd 電界効果トランジスタ

Also Published As

Publication number Publication date
KR930700969A (ko) 1993-03-16
US5430310A (en) 1995-07-04
EP0531550A4 (https=) 1994-01-26
KR0124131B1 (en) 1997-11-25
DE69223706D1 (de) 1998-02-05
EP0531550A1 (en) 1993-03-17
WO1992017908A1 (fr) 1992-10-15
EP0531550B1 (en) 1997-12-29

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Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN