DE3686089T2 - Verfahren zur herstellung eines metall-halbleiter-feldeffekttransistors und dadurch hergestellter transistor. - Google Patents

Verfahren zur herstellung eines metall-halbleiter-feldeffekttransistors und dadurch hergestellter transistor.

Info

Publication number
DE3686089T2
DE3686089T2 DE8686106310T DE3686089T DE3686089T2 DE 3686089 T2 DE3686089 T2 DE 3686089T2 DE 8686106310 T DE8686106310 T DE 8686106310T DE 3686089 T DE3686089 T DE 3686089T DE 3686089 T2 DE3686089 T2 DE 3686089T2
Authority
DE
Germany
Prior art keywords
transistor
producing
field effect
semiconductor field
metal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686106310T
Other languages
English (en)
Other versions
DE3686089D1 (de
Inventor
Shigeru Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3686089D1 publication Critical patent/DE3686089D1/de
Publication of DE3686089T2 publication Critical patent/DE3686089T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66924—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with an active layer made of a group 13/15 material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
DE8686106310T 1985-05-09 1986-05-09 Verfahren zur herstellung eines metall-halbleiter-feldeffekttransistors und dadurch hergestellter transistor. Expired - Fee Related DE3686089T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60098293A JPS61256675A (ja) 1985-05-09 1985-05-09 シヨツトキゲ−ト電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE3686089D1 DE3686089D1 (de) 1992-08-27
DE3686089T2 true DE3686089T2 (de) 1993-01-07

Family

ID=14215875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686106310T Expired - Fee Related DE3686089T2 (de) 1985-05-09 1986-05-09 Verfahren zur herstellung eines metall-halbleiter-feldeffekttransistors und dadurch hergestellter transistor.

Country Status (4)

Country Link
US (1) US4717685A (de)
EP (1) EP0201873B1 (de)
JP (1) JPS61256675A (de)
DE (1) DE3686089T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4889817A (en) * 1985-08-08 1989-12-26 Oki Electric Industry Co., Ltd. Method of manufacturing schottky gate field transistor by ion implantation method
US4847550A (en) * 1987-01-16 1989-07-11 Hitachi, Ltd. Semiconductor circuit
US5276340A (en) * 1989-11-21 1994-01-04 Fujitsu Limited Semiconductor integrated circuit having a reduced side gate effect
EP0437702B1 (de) * 1989-11-21 1998-08-12 Fujitsu Limited Integrierte Halbleiterschaltung mit Isolationszonen zwischen Komponenten aus Verbindungshalbleitern und Methode zu deren Herstellung
US5183767A (en) * 1991-02-14 1993-02-02 International Business Machines Corporation Method for internal gettering of oxygen in iii-v compound semiconductors
US5272373A (en) * 1991-02-14 1993-12-21 International Business Machines Corporation Internal gettering of oxygen in III-V compound semiconductors
US5453630A (en) * 1992-11-12 1995-09-26 The United States Of America As Represented By The Secretary Of The Army Variable gain optical detector
KR0144821B1 (ko) * 1994-05-16 1998-07-01 양승택 저전원전압으로 작동가능한 갈륨비소 반도체 전력소자의 제조 방법
US5411902A (en) * 1994-06-06 1995-05-02 The United States Of America As Represented By The Secretary Of The Air Force Process for improving gallium arsenide field effect transistor performance using an aluminum arsenide or an aluminum gallium arsenide buffer layer
US6458640B1 (en) * 2001-06-04 2002-10-01 Anadigics, Inc. GaAs MESFET having LDD and non-uniform P-well doping profiles
US6830953B1 (en) * 2002-09-17 2004-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Suppression of MOSFET gate leakage current
US7485514B2 (en) * 2006-01-05 2009-02-03 Winslow Thomas A Method for fabricating a MESFET
JP5453892B2 (ja) * 2009-04-15 2014-03-26 トヨタ自動車株式会社 窒化物半導体装置
JP5601848B2 (ja) 2010-02-09 2014-10-08 三菱電機株式会社 ＳｉＣ半導体装置の製造方法
CN106910775B (zh) * 2017-03-20 2020-01-10 西安电子科技大学 一种具有多凹陷缓冲层的4H-SiC金属半导体场效应晶体管
FR3104808A1 (fr) * 2019-12-12 2021-06-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de réalisation d'une couche semiconductrice dopée

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901738A (en) * 1973-12-20 1975-08-26 Hughes Aircraft Co Ion implanted junction laser and process for making same
JPS55151349A (en) * 1979-05-15 1980-11-25 Matsushita Electronics Corp Forming method of insulation isolating region
JPS5633817A (en) * 1979-08-29 1981-04-04 Fujitsu Ltd Preparation of semiconductor device
JPS56155531A (en) * 1980-04-30 1981-12-01 Fujitsu Ltd Manufacture of semiconductor device
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
JPS594085A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
EP0112657B1 (de) * 1982-11-29 1990-06-20 Fujitsu Limited Feldeffekttransistor und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JPH0260063B2 (de) 1990-12-14
US4717685A (en) 1988-01-05
EP0201873A3 (en) 1989-10-18
EP0201873B1 (de) 1992-07-22
JPS61256675A (ja) 1986-11-14
EP0201873A2 (de) 1986-11-20
DE3686089D1 (de) 1992-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee