DE69123642T2 - MESFET und Verfahren zur Herstellung - Google Patents
MESFET und Verfahren zur HerstellungInfo
- Publication number
- DE69123642T2 DE69123642T2 DE69123642T DE69123642T DE69123642T2 DE 69123642 T2 DE69123642 T2 DE 69123642T2 DE 69123642 T DE69123642 T DE 69123642T DE 69123642 T DE69123642 T DE 69123642T DE 69123642 T2 DE69123642 T2 DE 69123642T2
- Authority
- DE
- Germany
- Prior art keywords
- mesfet
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66886—Lateral transistors with two or more independent gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2153395A JPH0444328A (ja) | 1990-06-11 | 1990-06-11 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69123642D1 DE69123642D1 (de) | 1997-01-30 |
DE69123642T2 true DE69123642T2 (de) | 1997-04-17 |
Family
ID=15561558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69123642T Expired - Fee Related DE69123642T2 (de) | 1990-06-11 | 1991-06-05 | MESFET und Verfahren zur Herstellung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5225703A (de) |
EP (1) | EP0461807B1 (de) |
JP (1) | JPH0444328A (de) |
DE (1) | DE69123642T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950034830A (ko) * | 1994-04-29 | 1995-12-28 | 빈센트 비. 인그라시아 | 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법 |
US5965919A (en) * | 1995-10-19 | 1999-10-12 | Samsung Electronics Co., Ltd. | Semiconductor device and a method of fabricating the same |
US5834810A (en) * | 1996-10-17 | 1998-11-10 | Mitsubishi Semiconductor America, Inc. | Asymmetrical vertical lightly doped drain transistor and method of forming the same |
US6830976B2 (en) * | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6703688B1 (en) | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
US6946371B2 (en) | 2002-06-10 | 2005-09-20 | Amberwave Systems Corporation | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
KR100728173B1 (ko) | 2003-03-07 | 2007-06-13 | 앰버웨이브 시스템즈 코포레이션 | 쉘로우 트렌치 분리법 |
US8590067B2 (en) * | 2005-02-03 | 2013-11-26 | Danco, Inc. | Control of toilet bowl fill flow |
US20080029484A1 (en) * | 2006-07-25 | 2008-02-07 | Applied Materials, Inc. | In-situ process diagnostics of in-film aluminum during plasma deposition |
CN111627927A (zh) * | 2020-05-19 | 2020-09-04 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板及其制作方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1179071A (en) * | 1981-06-17 | 1984-12-04 | Tadashi Fukuzawa | Semiconductor device |
JPS59144134A (ja) * | 1983-02-08 | 1984-08-18 | Nec Corp | フオトマスクエツチング終点判定装置 |
JPS6292478A (ja) * | 1985-10-18 | 1987-04-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6292479A (ja) * | 1985-10-18 | 1987-04-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS62113479A (ja) * | 1985-11-13 | 1987-05-25 | Fujitsu Ltd | 電界効果半導体装置の製造方法 |
CA1298921C (en) * | 1986-07-02 | 1992-04-14 | Madhukar B. Vora | Bipolar transistor with polysilicon stringer base contact |
JPS6312177A (ja) * | 1986-07-03 | 1988-01-19 | Fujitsu Ltd | 超高周波トランジスタ |
JPS63153864A (ja) * | 1986-12-17 | 1988-06-27 | Fujitsu Ltd | Mos型半導体装置の製造方法 |
JPH01303762A (ja) * | 1988-05-31 | 1989-12-07 | Nec Corp | ショットキー障壁接合ゲート型電界効果トランジスタ |
US5196359A (en) * | 1988-06-30 | 1993-03-23 | Texas Instruments Incorporated | Method of forming heterostructure field effect transistor |
JPH02134828A (ja) * | 1988-11-15 | 1990-05-23 | Nec Corp | ショットキー障壁接合ゲート型電界効果トランジスタの製造方法 |
JPH02148740A (ja) * | 1988-11-29 | 1990-06-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5041393A (en) * | 1988-12-28 | 1991-08-20 | At&T Bell Laboratories | Fabrication of GaAs integrated circuits |
KR910013568A (ko) * | 1989-12-31 | 1991-08-08 | 김광호 | 화합물 반도체 장치 및 그 제조방법 |
JPH03292744A (ja) * | 1990-01-24 | 1991-12-24 | Toshiba Corp | 化合物半導体装置およびその製造方法 |
JPH0475351A (ja) * | 1990-07-17 | 1992-03-10 | Mitsubishi Electric Corp | 化合物半導体装置の製造方法 |
JPH04167439A (ja) * | 1990-10-30 | 1992-06-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH04260338A (ja) * | 1991-02-14 | 1992-09-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1990
- 1990-06-11 JP JP2153395A patent/JPH0444328A/ja active Pending
-
1991
- 1991-05-30 US US07/707,752 patent/US5225703A/en not_active Expired - Fee Related
- 1991-06-05 EP EP91305104A patent/EP0461807B1/de not_active Expired - Lifetime
- 1991-06-05 DE DE69123642T patent/DE69123642T2/de not_active Expired - Fee Related
-
1993
- 1993-04-12 US US08/045,131 patent/US5360755A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0444328A (ja) | 1992-02-14 |
US5360755A (en) | 1994-11-01 |
EP0461807A2 (de) | 1991-12-18 |
DE69123642D1 (de) | 1997-01-30 |
US5225703A (en) | 1993-07-06 |
EP0461807B1 (de) | 1996-12-18 |
EP0461807A3 (de) | 1994-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |