DE69203510T2 - Verfahren zur Herstellung einer metallischen Kaltkathode in mikroskopischer Grösse. - Google Patents

Verfahren zur Herstellung einer metallischen Kaltkathode in mikroskopischer Grösse.

Info

Publication number
DE69203510T2
DE69203510T2 DE69203510T DE69203510T DE69203510T2 DE 69203510 T2 DE69203510 T2 DE 69203510T2 DE 69203510 T DE69203510 T DE 69203510T DE 69203510 T DE69203510 T DE 69203510T DE 69203510 T2 DE69203510 T2 DE 69203510T2
Authority
DE
Germany
Prior art keywords
production
cold cathode
microscopic size
metallic cold
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69203510T
Other languages
English (en)
Other versions
DE69203510D1 (de
Inventor
Shinya Fukuta
Keiichi Betsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69203510D1 publication Critical patent/DE69203510D1/de
Publication of DE69203510T2 publication Critical patent/DE69203510T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00—Apparatus and processes for manufacture of discharge tubes
    • H01J2209/02—Manufacture of cathodes
    • H01J2209/022—Cold cathodes
    • H01J2209/0223—Field emission cathodes
    • H01J2209/0226—Sharpening or resharpening of emitting point or edge

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69203510T 1991-04-12 1992-04-08 Verfahren zur Herstellung einer metallischen Kaltkathode in mikroskopischer Grösse. Expired - Fee Related DE69203510T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7946491A JP2550798B2 (ja) 1991-04-12 1991-04-12 微小冷陰極の製造方法

Publications (2)

Publication Number Publication Date
DE69203510D1 DE69203510D1 (de) 1995-08-24
DE69203510T2 true DE69203510T2 (de) 1995-12-21

Family

ID=13690609

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69203510T Expired - Fee Related DE69203510T2 (de) 1991-04-12 1992-04-08 Verfahren zur Herstellung einer metallischen Kaltkathode in mikroskopischer Grösse.

Country Status (5)

Country Link
US (1) US5389026A (de)
EP (1) EP0508737B1 (de)
JP (1) JP2550798B2 (de)
KR (1) KR960000315B1 (de)
DE (1) DE69203510T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9216647D0 (en) * 1992-08-05 1992-09-16 Isis Innovation Cold cathodes
KR950008756B1 (ko) * 1992-11-25 1995-08-04 삼성전관주식회사 실리콘 전자방출소자 및 그의 제조방법
KR950008758B1 (ko) * 1992-12-11 1995-08-04 삼성전관주식회사 실리콘 전계방출 소자 및 그의 제조방법
DE69422234T2 (de) * 1993-07-16 2000-06-15 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung einer Feldemissionsanordnung
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
US7025892B1 (en) 1993-09-08 2006-04-11 Candescent Technologies Corporation Method for creating gated filament structures for field emission displays
KR970007786B1 (ko) * 1993-11-08 1997-05-16 이종덕 실리콘 필드 에미터 어레이의 제조방법
US5607335A (en) * 1994-06-29 1997-03-04 Silicon Video Corporation Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
WO1996014650A1 (en) * 1994-11-04 1996-05-17 Micron Display Technology, Inc. Method for sharpening emitter sites using low temperature oxidation processes
JPH08148084A (ja) * 1994-11-24 1996-06-07 Nec Corp 電界放出型冷陰極の製造方法
US6033277A (en) * 1995-02-13 2000-03-07 Nec Corporation Method for forming a field emission cold cathode
JPH08222126A (ja) * 1995-02-13 1996-08-30 Nec Kansai Ltd 電界放出冷陰極の製造方法
US6187603B1 (en) 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US5755944A (en) * 1996-06-07 1998-05-26 Candescent Technologies Corporation Formation of layer having openings produced by utilizing particles deposited under influence of electric field
US5865657A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
US5865659A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
US5857885A (en) * 1996-11-04 1999-01-12 Laou; Philips Methods of forming field emission devices with self-aligned gate structure
FR2766011B1 (fr) * 1997-07-10 1999-09-24 Alsthom Cge Alcatel Cathode froide a micropointes
US6010383A (en) * 1997-10-31 2000-01-04 Candescent Technologies Corporation Protection of electron-emissive elements prior to removing excess emitter material during fabrication of electron-emitting device
US6008062A (en) * 1997-10-31 1999-12-28 Candescent Technologies Corporation Undercutting technique for creating coating in spaced-apart segments
JP3211752B2 (ja) * 1997-11-10 2001-09-25 日本電気株式会社 Ｍｉｍ又はｍｉｓ電子源の構造及びその製造方法
US6171164B1 (en) * 1998-02-19 2001-01-09 Micron Technology, Inc. Method for forming uniform sharp tips for use in a field emission array
KR100513652B1 (ko) * 1998-08-24 2005-12-26 비오이 하이디스 테크놀로지 주식회사 전계 방출 소자 및 그 제조방법
US6064145A (en) * 1999-06-04 2000-05-16 Winbond Electronics Corporation Fabrication of field emitting tips
KR20010091420A (ko) * 2000-03-15 2001-10-23 윤덕용 금속실리사이드가 코팅된 실리콘 팁의 제조방법
US6921684B2 (en) * 2003-10-17 2005-07-26 Intel Corporation Method of sorting carbon nanotubes including protecting metallic nanotubes and removing the semiconducting nanotubes
US8866068B2 (en) 2012-12-27 2014-10-21 Schlumberger Technology Corporation Ion source with cathode having an array of nano-sized projections

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
JPS5166769A (de) * 1974-12-06 1976-06-09 Hitachi Ltd
JPS529371A (en) * 1975-07-12 1977-01-24 Ise Electronics Corp Fluorescent display tube manufactruing process
US4244792A (en) * 1980-02-26 1981-01-13 Hixson Metal Finishing Method for stripping anodized aluminum and aluminum alloys
JPS62105459A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 半導体構造物
JPH02257635A (ja) * 1989-03-30 1990-10-18 Toshiba Corp パターン形成方法
JPH02288128A (ja) * 1989-04-28 1990-11-28 Matsushita Electric Ind Co Ltd 電子放出素子の製造方法
JPH0371529A (ja) * 1989-08-09 1991-03-27 Seiko Epson Corp 電界放出電極の製造方法
JPH03223719A (ja) * 1989-10-03 1991-10-02 Sharp Corp 電極の形成方法

Also Published As

Publication number Publication date
US5389026A (en) 1995-02-14
EP0508737B1 (de) 1995-07-19
JPH04312739A (ja) 1992-11-04
EP0508737A1 (de) 1992-10-14
JP2550798B2 (ja) 1996-11-06
DE69203510D1 (de) 1995-08-24
KR960000315B1 (ko) 1996-01-04

Similar Documents

Publication Publication Date Title
DE69203510T2 (de) Verfahren zur Herstellung einer metallischen Kaltkathode in mikroskopischer Grösse.
DE69331538D1 (de) Verfahren zur Herstellung einer elektrischen Dünnschicht
DE69032568D1 (de) Verfahren zur Herstellung einer dekorativen Folie
DE69114760T2 (de) Verfahren zur Herstellung einer Solarzelle.
DE69218347T2 (de) Verfahren zur Herstellung einer Lanthanchromit-Schicht
DE69024246T2 (de) Verfahren zur Herstellung einer Dünnschichthalbleiterlegierung
DE69511050D1 (de) Verfahren zur Herstellung von Doppelmetalloxidpulvern
DE69323819T2 (de) Verfahren zur Herstellung einer Zerstäubungskathode
DE69223470T2 (de) Verfahren zur Herstellung von amorphen, metallischen Werkstoffe
DE69331077T2 (de) Verfahren zur Herstellung einer MOSFET-Struktur mit planarem Oberfläche
DE69110452D1 (de) Verfahren zur Herstellung einer Isolierung.
DE69229762D1 (de) Verfahren zur Herstellung dünner Metallfilme
DE69002502T2 (de) Verfahren zur Herstellung einer Metalloxidschicht.
DE59101415D1 (de) Verfahren zur Herstellung eines metallischen Verbunddrahtes.
DE69313936T2 (de) Verfahren zur Herstellung von Nickelhydroxyd
DE68904630T2 (de) Verfahren zur herstellung einer metallmatrix.
DE69108421T2 (de) Verfahren zur Herstellung eines Faser-Gummi-Verbundwerkstoffes.
DE68911036D1 (de) Verfahren zur Herstellung einer Metalloxid-Verbindung.
DE69324085D1 (de) Verfahren zur Herstellung einer supraleitenden dünnen Oxydschicht
DE69007424T2 (de) Verfahren zur Herstellung eines oxidischen Supraleiters.
DE69110495D1 (de) Verfahren zur Herstellung eines oxidischen Supraleiters.
DE69112229D1 (de) Verfahren zur Herstellung einer Fettsäure.
DE69110949D1 (de) Verfahren zur Herstellung einer Kunststoffplatte.
DE69012494T2 (de) Verfahren zur Herstellung einer Kathode.
DE59301043D1 (de) Verfahren zur Herstellung einer Display-Röhre.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee