DE69331538D1 - Verfahren zur Herstellung einer elektrischen Dünnschicht - Google Patents
Verfahren zur Herstellung einer elektrischen DünnschichtInfo
- Publication number
- DE69331538D1 DE69331538D1 DE69331538T DE69331538T DE69331538D1 DE 69331538 D1 DE69331538 D1 DE 69331538D1 DE 69331538 T DE69331538 T DE 69331538T DE 69331538 T DE69331538 T DE 69331538T DE 69331538 D1 DE69331538 D1 DE 69331538D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- thin film
- electrical thin
- electrical
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Thermoelectric active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
- G02F1/0027—Ferro-electric materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4321570A JP3059597B2 (ja) | 1992-12-01 | 1992-12-01 | 薄膜の製造方法及びその製造装置 |
JP32157292A JP3446765B2 (ja) | 1992-12-01 | 1992-12-01 | 酸化物薄膜の製造方法および製造装置 |
JP04321573A JP3124849B2 (ja) | 1992-12-01 | 1992-12-01 | 誘電体薄膜の製造方法および製造装置 |
JP33027092A JP3293912B2 (ja) | 1992-12-10 | 1992-12-10 | 酸化物薄膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69331538D1 true DE69331538D1 (de) | 2002-03-21 |
DE69331538T2 DE69331538T2 (de) | 2002-08-29 |
Family
ID=27480254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69331538T Expired - Lifetime DE69331538T2 (de) | 1992-12-01 | 1993-11-18 | Verfahren zur Herstellung einer elektrischen Dünnschicht |
Country Status (3)
Country | Link |
---|---|
US (2) | US5674366A (de) |
EP (1) | EP0600303B1 (de) |
DE (1) | DE69331538T2 (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5969935A (en) * | 1996-03-15 | 1999-10-19 | Ramtron International Corporation | Use of calcium and strontium dopants to improve retention performance in a PZT ferroelectric film |
DE19633175C2 (de) * | 1996-08-17 | 2003-04-10 | Forschungszentrum Juelich Gmbh | Selbstpolung bei Perowskiten vom Typ ABO¶3¶ |
WO1998008255A1 (fr) | 1996-08-20 | 1998-02-26 | Hitachi, Ltd. | Procede de fabrication de dispositif a oxyde dielectrique et memoire et semi-conducteur utilisant ce dispositif |
US5873983A (en) * | 1997-01-13 | 1999-02-23 | Vanguard International Semiconductor Corporation | Method for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers |
US6197164B1 (en) | 1997-10-10 | 2001-03-06 | International Business Machines Corporation | Method and apparatus to improve the uniformity of ion beam deposited films in an ion beam sputtering system |
US6103320A (en) * | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
JPH11288893A (ja) | 1998-04-03 | 1999-10-19 | Nec Corp | 半導体製造装置及び半導体装置の製造方法 |
US6203608B1 (en) | 1998-04-15 | 2001-03-20 | Ramtron International Corporation | Ferroelectric thin films and solutions: compositions |
TW371108U (en) * | 1998-04-21 | 1999-09-21 | United Semiconductor Corp | Defected chip detecting tool |
US6328856B1 (en) * | 1999-08-04 | 2001-12-11 | Seagate Technology Llc | Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device |
JP3529676B2 (ja) * | 1999-09-16 | 2004-05-24 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6528377B1 (en) | 2000-02-10 | 2003-03-04 | Motorola, Inc. | Semiconductor substrate and method for preparing the same |
US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
KR100760078B1 (ko) | 2000-03-13 | 2007-09-18 | 다다히로 오미 | 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법 |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6432546B1 (en) * | 2000-07-24 | 2002-08-13 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6482538B2 (en) | 2000-07-24 | 2002-11-19 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
US6493497B1 (en) | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6583034B2 (en) | 2000-11-22 | 2003-06-24 | Motorola, Inc. | Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure |
US6559471B2 (en) | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US20020144903A1 (en) * | 2001-02-09 | 2002-10-10 | Plasmion Corporation | Focused magnetron sputtering system |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US7046719B2 (en) | 2001-03-08 | 2006-05-16 | Motorola, Inc. | Soft handoff between cellular systems employing different encoding rates |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6462360B1 (en) | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
JP2003141719A (ja) * | 2001-10-30 | 2003-05-16 | Anelva Corp | スパッタリング装置及び薄膜形成方法 |
DE10251243B3 (de) * | 2002-11-04 | 2004-06-09 | Infineon Technologies Ag | Biochip zur kapazitiven Stimulation und/oder Detektion biologischer Gewebe sowie ein Verfahren zu dessen Herstellung |
DE10347521A1 (de) | 2002-12-04 | 2004-06-24 | Leybold Optics Gmbh | Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens |
US20040182701A1 (en) * | 2003-01-29 | 2004-09-23 | Aashi Glass Company, Limited | Sputtering apparatus, a mixed film produced by the sputtering apparatus and a multilayer film including the mixed film |
CN100489149C (zh) * | 2003-06-03 | 2009-05-20 | 株式会社新柯隆 | 薄膜的形成方法及其形成装置 |
US20060099827A1 (en) * | 2004-11-05 | 2006-05-11 | Yoo Woo S | Photo-enhanced UV treatment of dielectric films |
JP5584409B2 (ja) * | 2008-02-21 | 2014-09-03 | キヤノンアネルバ株式会社 | スパッタリング装置およびその制御方法 |
DE102011000752B3 (de) * | 2011-02-15 | 2012-06-06 | Pyreos Ltd. | Verfahren zum Herstellen eines Dünnfilms aus Blei-Zirkonat-Titanat, elektronisches Bauteil mit dem Dünnfilm und Verwendung des Bauteils |
EP3794157B1 (de) * | 2018-05-17 | 2022-03-16 | Evatec AG | Verfahren zur behandlung eines substrats und vakuumabscheidungsvorrichtung |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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CA1155798A (en) * | 1981-03-30 | 1983-10-25 | Shmuel Maniv | Reactive deposition method and apparatus |
EP0103461B1 (de) * | 1982-09-10 | 1988-11-17 | Nippon Telegraph And Telephone Corporation | Vorrichtung und Verfahren zum Auftragen mittels Plasma |
US4888246A (en) * | 1985-05-23 | 1989-12-19 | Matsushita Electric Industrial Co., Ltd. | Dielectric thin film, and method for making the thin film |
JP2532381B2 (ja) * | 1986-03-04 | 1996-09-11 | 松下電器産業株式会社 | 強誘電体薄膜素子及びその製造方法 |
US4888202A (en) * | 1986-07-31 | 1989-12-19 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
JPS63241823A (ja) * | 1987-03-27 | 1988-10-07 | Nissin Electric Co Ltd | 超電導薄膜の製造方法 |
US4842704A (en) * | 1987-07-29 | 1989-06-27 | Collins George J | Magnetron deposition of ceramic oxide-superconductor thin films |
GB2208390B (en) * | 1987-08-06 | 1991-03-27 | Plessey Co Plc | Thin film deposition process |
US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
US4952295A (en) * | 1988-04-15 | 1990-08-28 | Matsushita Electric Industrial Co., Ltd. | Method of producing a deposition film of composite material |
JPH02107757A (ja) * | 1988-10-15 | 1990-04-19 | Koji Hashimoto | アモルファス超格子合金の作製法 |
KR940006708B1 (ko) * | 1989-01-26 | 1994-07-25 | 세이꼬 엡슨 가부시끼가이샤 | 반도체 장치의 제조 방법 |
JPH02210867A (ja) * | 1989-02-10 | 1990-08-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
DE69027004T2 (de) * | 1989-11-13 | 1996-11-14 | Optical Coating Laboratory Inc | Geometrie und Gestaltungen eines Geräts zum Magnetronzerstäuben |
US5198090A (en) * | 1990-08-31 | 1993-03-30 | International Business Machines Corporation | Sputtering apparatus for producing thin films of material |
US5154810A (en) * | 1991-01-29 | 1992-10-13 | Optical Coating Laboratory, Inc. | Thin film coating and method |
US5196101A (en) * | 1991-02-05 | 1993-03-23 | Califoria Institute Of Technology | Deposition of thin films of multicomponent materials |
EP0508359B1 (de) * | 1991-04-12 | 1996-10-09 | Balzers Aktiengesellschaft | Verfahren und Anlage zur Beschichtung mindestens eines Gegenstandes |
JP3048072B2 (ja) * | 1991-05-25 | 2000-06-05 | ローム株式会社 | 酸化膜の成膜方法及びその装置 |
JP3021165B2 (ja) * | 1992-02-24 | 2000-03-15 | シャープ株式会社 | キャパシタ |
-
1993
- 1993-11-18 DE DE69331538T patent/DE69331538T2/de not_active Expired - Lifetime
- 1993-11-18 EP EP93118535A patent/EP0600303B1/de not_active Expired - Lifetime
-
1995
- 1995-06-07 US US08/483,873 patent/US5674366A/en not_active Expired - Lifetime
- 1995-06-15 US US08/483,835 patent/US5672252A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0600303B1 (de) | 2002-02-06 |
EP0600303A2 (de) | 1994-06-08 |
DE69331538T2 (de) | 2002-08-29 |
EP0600303A3 (de) | 1995-08-02 |
US5674366A (en) | 1997-10-07 |
US5672252A (en) | 1997-09-30 |
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