DE69130210D1 - Halbleiterspeicher mit hochgeschwindigkeitsadressendekodierer - Google Patents
Halbleiterspeicher mit hochgeschwindigkeitsadressendekodiererInfo
- Publication number
- DE69130210D1 DE69130210D1 DE69130210T DE69130210T DE69130210D1 DE 69130210 D1 DE69130210 D1 DE 69130210D1 DE 69130210 T DE69130210 T DE 69130210T DE 69130210 T DE69130210 T DE 69130210T DE 69130210 D1 DE69130210 D1 DE 69130210D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- address decoder
- speed address
- speed
- decoder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31056690 | 1990-11-16 | ||
PCT/JP1991/001563 WO1992009084A1 (en) | 1990-11-16 | 1991-11-15 | Semiconductor memory having high-speed address decoder |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69130210D1 true DE69130210D1 (de) | 1998-10-22 |
DE69130210T2 DE69130210T2 (de) | 1999-01-21 |
Family
ID=18006786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69130210T Expired - Lifetime DE69130210T2 (de) | 1990-11-16 | 1991-11-15 | Halbleiterspeicher mit hochgeschwindigkeitsadressendekodierer |
Country Status (5)
Country | Link |
---|---|
US (1) | US5394373A (de) |
EP (1) | EP0511397B1 (de) |
KR (1) | KR970004746B1 (de) |
DE (1) | DE69130210T2 (de) |
WO (1) | WO1992009084A1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05234371A (ja) * | 1992-02-21 | 1993-09-10 | Fujitsu Ltd | ダイナミックram |
JPH07169276A (ja) * | 1993-12-13 | 1995-07-04 | Toshiba Corp | 同期型メモリ |
JP3226426B2 (ja) * | 1994-09-27 | 2001-11-05 | 松下電器産業株式会社 | 半導体メモリ及びその使用方法並びに画像プロセッサ |
US5526320A (en) * | 1994-12-23 | 1996-06-11 | Micron Technology Inc. | Burst EDO memory device |
US5717654A (en) * | 1995-02-10 | 1998-02-10 | Micron Technology, Inc. | Burst EDO memory device with maximized write cycle timing |
US5546353A (en) * | 1995-05-26 | 1996-08-13 | National Semiconductor Corporation | Partitioned decode circuit for low power operation |
DE69532376T2 (de) * | 1995-05-31 | 2004-06-09 | United Memories, Inc., Colorado Springs | Schaltung und Verfahren zum Zugriff auf Speicherzellen einer Speicheranordnung |
US5822252A (en) * | 1996-03-29 | 1998-10-13 | Aplus Integrated Circuits, Inc. | Flash memory wordline decoder with overerase repair |
US5687121A (en) * | 1996-03-29 | 1997-11-11 | Aplus Integrated Circuits, Inc. | Flash EEPROM worldline decoder |
US6209071B1 (en) | 1996-05-07 | 2001-03-27 | Rambus Inc. | Asynchronous request/synchronous data dynamic random access memory |
JP3827406B2 (ja) * | 1997-06-25 | 2006-09-27 | 富士通株式会社 | クロック同期型入力回路及びそれを利用した半導体記憶装置 |
US5923604A (en) * | 1997-12-23 | 1999-07-13 | Micron Technology, Inc. | Method and apparatus for anticipatory selection of external or internal addresses in a synchronous memory device |
JP3204450B2 (ja) * | 1998-04-15 | 2001-09-04 | 日本電気株式会社 | アドレスデコード回路及びアドレスデコード方法 |
US6072746A (en) * | 1998-08-14 | 2000-06-06 | International Business Machines Corporation | Self-timed address decoder for register file and compare circuit of a multi-port CAM |
US6144611A (en) * | 1999-09-07 | 2000-11-07 | Motorola Inc. | Method for clearing memory contents and memory array capable of performing the same |
US6185148B1 (en) * | 2000-02-21 | 2001-02-06 | Hewlett-Packard Company | General purpose decode implementation for multiported memory array circuits |
JP3376998B2 (ja) * | 2000-03-08 | 2003-02-17 | 日本電気株式会社 | 半導体記憶装置 |
JP3948933B2 (ja) * | 2001-11-07 | 2007-07-25 | 富士通株式会社 | 半導体記憶装置、及びその制御方法 |
US6798711B2 (en) * | 2002-03-19 | 2004-09-28 | Micron Technology, Inc. | Memory with address management |
US7385858B2 (en) * | 2005-11-30 | 2008-06-10 | Mosaid Technologies Incorporated | Semiconductor integrated circuit having low power consumption with self-refresh |
JP2007293933A (ja) * | 2006-04-21 | 2007-11-08 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP4984759B2 (ja) * | 2006-09-05 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5381021A (en) * | 1976-12-27 | 1978-07-18 | Nippon Telegr & Teleph Corp <Ntt> | Address input circuit |
JPS5381020A (en) * | 1976-12-27 | 1978-07-18 | Fujitsu Ltd | Error check method for memory unit |
US4207618A (en) * | 1978-06-26 | 1980-06-10 | Texas Instruments Incorporated | On-chip refresh for dynamic memory |
JPS55150192A (en) * | 1979-05-08 | 1980-11-21 | Nec Corp | Memory unit |
JPS55150191A (en) * | 1979-05-08 | 1980-11-21 | Nec Corp | Information refreshing method of semiconductor integrated circuit |
DE3232215A1 (de) * | 1982-08-30 | 1984-03-01 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte digitale halbleiterschaltung |
JPS59157891A (ja) * | 1983-02-25 | 1984-09-07 | Toshiba Corp | メモリ装置におけるメモリセル選択回路 |
JPS60167194A (ja) * | 1984-02-09 | 1985-08-30 | Fujitsu Ltd | 半導体記憶装置 |
JPS6117292A (ja) * | 1984-07-04 | 1986-01-25 | Hitachi Ltd | 半導体記憶装置 |
JPS6142795A (ja) * | 1984-08-03 | 1986-03-01 | Toshiba Corp | 半導体記憶装置の行デコ−ダ系 |
JPS61126687A (ja) * | 1984-11-22 | 1986-06-14 | Hitachi Ltd | ダイナミツク型ram |
JPS6117291A (ja) * | 1985-06-21 | 1986-01-25 | Hitachi Ltd | メモリの駆動方式 |
JPH01205788A (ja) * | 1988-02-12 | 1989-08-18 | Toshiba Corp | 半導体集積回路 |
JPH0221490A (ja) * | 1988-07-07 | 1990-01-24 | Oki Electric Ind Co Ltd | ダイナミック・ランダム・アクセス・メモリ |
JPH0713862B2 (ja) * | 1988-08-31 | 1995-02-15 | 三菱電機株式会社 | 半導体記憶装置 |
JPH02141993A (ja) * | 1988-11-21 | 1990-05-31 | Toshiba Corp | 半導体記憶装置 |
JPH02247892A (ja) * | 1989-03-20 | 1990-10-03 | Fujitsu Ltd | ダイナミックランダムアクセスメモリ |
-
1991
- 1991-11-15 KR KR1019920701683A patent/KR970004746B1/ko not_active IP Right Cessation
- 1991-11-15 DE DE69130210T patent/DE69130210T2/de not_active Expired - Lifetime
- 1991-11-15 US US07/854,642 patent/US5394373A/en not_active Expired - Lifetime
- 1991-11-15 EP EP91919644A patent/EP0511397B1/de not_active Expired - Lifetime
- 1991-11-15 WO PCT/JP1991/001563 patent/WO1992009084A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0511397A4 (en) | 1994-07-06 |
WO1992009084A1 (en) | 1992-05-29 |
KR970004746B1 (ko) | 1997-04-03 |
DE69130210T2 (de) | 1999-01-21 |
EP0511397B1 (de) | 1998-09-16 |
EP0511397A1 (de) | 1992-11-04 |
US5394373A (en) | 1995-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69130210D1 (de) | Halbleiterspeicher mit hochgeschwindigkeitsadressendekodierer | |
DE69124291D1 (de) | Halbleiterspeicher mit verbesserter Leseanordnung | |
DE69128635D1 (de) | Nicht-flüchtiger halbleiterspeicher | |
DE69428652D1 (de) | Halbleiterspeicher mit mehreren Banken | |
DE69222589D1 (de) | Nichtlöschbarer Halbleiterspeicher mit Reihendecoder | |
DE69130580D1 (de) | Cache-Speicheranordnung | |
DE69222560D1 (de) | Halbleiterfestwertspeicher | |
DE69125212D1 (de) | Nichtflüchtige Halbleiterspeicherschaltung | |
DE69129016D1 (de) | Synchroner halbleiterspeicher | |
DE69121760D1 (de) | Halbleiterspeicherzelle | |
DE69327499D1 (de) | Halbleiterspeicher | |
DE69520512D1 (de) | Halbleiterspeicher mit eingebautem Cachespeicher | |
DE69221218D1 (de) | Halbleiterspeicher | |
DE69119277D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
DE69215707D1 (de) | Halbleiter-Speicherzelle | |
DE69216695D1 (de) | Halbleiterspeicher | |
DE69125692D1 (de) | Nichtflüchtiger Halbleiter-Speicher | |
DE69119800D1 (de) | Halbleiterspeicher | |
DE69121801D1 (de) | Halbleiterspeicheranordnung | |
DE69216267D1 (de) | Multiport-Speicher | |
DE69123409D1 (de) | Halbleiterspeicherschaltung | |
DE69129492D1 (de) | Halbleiterspeicher | |
DE69220465D1 (de) | Halbleiteranordnung mit Speicherzelle | |
DE69127317D1 (de) | Halbleiterspeicherschaltung | |
DE69218878D1 (de) | Nichtflüchtiger Halbleiterspeicher |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU VLSI LTD., KASUGAI, AICHI, JP Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP Owner name: FUJITSU VLSI LTD., KASUGAI, AICHI, JP |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |