DE69112505D1 - Herstellung eines Glastiegels aus Quarz zur Verwendung in der Herstellung von Einkristall-Silizium. - Google Patents

Herstellung eines Glastiegels aus Quarz zur Verwendung in der Herstellung von Einkristall-Silizium.

Info

Publication number
DE69112505D1
DE69112505D1 DE69112505T DE69112505T DE69112505D1 DE 69112505 D1 DE69112505 D1 DE 69112505D1 DE 69112505 T DE69112505 T DE 69112505T DE 69112505 T DE69112505 T DE 69112505T DE 69112505 D1 DE69112505 D1 DE 69112505D1
Authority
DE
Germany
Prior art keywords
manufacture
single crystal
quartz glass
crystal silicon
glass crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69112505T
Other languages
English (en)
Other versions
DE69112505T2 (de
Inventor
Mitsuo Matsumura
Hiroshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Quarzglas GmbH and Co KG
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Application granted granted Critical
Publication of DE69112505D1 publication Critical patent/DE69112505D1/de
Publication of DE69112505T2 publication Critical patent/DE69112505T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/02—Pure silica glass, e.g. pure fused quartz
    • C03B2201/03—Impurity concentration specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/02—Pure silica glass, e.g. pure fused quartz
    • C03B2201/03—Impurity concentration specified
    • C03B2201/04—Hydroxyl ion (OH)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/90—Drying, dehydration, minimizing oh groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Glass Compositions (AREA)
DE69112505T 1990-06-25 1991-06-18 Herstellung eines Glastiegels aus Quarz zur Verwendung in der Herstellung von Einkristall-Silizium. Expired - Lifetime DE69112505T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16625290 1990-06-25
JP3093861A JP2933404B2 (ja) 1990-06-25 1991-04-24 シリコン単結晶引き上げ用石英ガラスルツボとその製造方法

Publications (2)

Publication Number Publication Date
DE69112505D1 true DE69112505D1 (de) 1995-10-05
DE69112505T2 DE69112505T2 (de) 1996-04-25

Family

ID=26435142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112505T Expired - Lifetime DE69112505T2 (de) 1990-06-25 1991-06-18 Herstellung eines Glastiegels aus Quarz zur Verwendung in der Herstellung von Einkristall-Silizium.

Country Status (4)

Country Link
US (1) US5174801A (de)
EP (1) EP0463543B1 (de)
JP (1) JP2933404B2 (de)
DE (1) DE69112505T2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888079B2 (ja) * 1993-02-04 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ用ルツボ
DE69508473T2 (de) * 1994-07-06 1999-10-28 Shinetsu Handotai Kk Verfahren zur Herstellung von Silizium-Einkristall und Tiegel aus geschmolzenem Silika dafür
JP2830987B2 (ja) * 1994-07-19 1998-12-02 信越石英株式会社 石英ガラスルツボ及びその製造方法
US5772714A (en) * 1995-01-25 1998-06-30 Shin-Etsu Quartz Products Co., Ltd. Process for producing opaque silica glass
US5976247A (en) * 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
JP3533416B2 (ja) * 1996-02-06 2004-05-31 三菱住友シリコン株式会社 単結晶引上装置
JP3764776B2 (ja) * 1996-03-18 2006-04-12 信越石英株式会社 単結晶引き上げ用石英ガラスるつぼ及びその製造方法
US6106610A (en) * 1997-09-30 2000-08-22 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass crucible for producing silicone single crystal and method for producing the crucible
US5913975A (en) * 1998-02-03 1999-06-22 Memc Electronic Materials, Inc. Crucible and method of preparation thereof
DE69912668T2 (de) 1998-02-26 2004-09-30 Mitsubishi Materials Corp. Kokille und Verfahren zur Herstellung von Siliziumstäben
JP4398527B2 (ja) * 1998-05-25 2010-01-13 信越石英株式会社 シリコン単結晶引き上げ用石英ガラスるつぼ
JP4138959B2 (ja) * 1998-08-28 2008-08-27 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼ及びその製造方法
US6187089B1 (en) 1999-02-05 2001-02-13 Memc Electronic Materials, Inc. Tungsten doped crucible and method for preparing same
JP3765368B2 (ja) * 1999-06-01 2006-04-12 東芝セラミックス株式会社 石英ガラスルツボおよびその製造方法
US6193926B1 (en) 1999-09-03 2001-02-27 Heraeus Amersil, Inc. Process for making molded glass and ceramic articles
DE19962449C2 (de) * 1999-12-22 2003-09-25 Heraeus Quarzglas Quarzglastiegel und Verfahren für seine Herstellung
AUPR054000A0 (en) * 2000-10-04 2000-10-26 Austai Motors Designing Pty Ltd A planetary gear apparatus
US6510707B2 (en) * 2001-03-15 2003-01-28 Heraeus Shin-Etsu America, Inc. Methods for making silica crucibles
JP3983054B2 (ja) * 2002-01-17 2007-09-26 信越石英株式会社 シリコン単結晶引上げ用石英ガラスるつぼ及びその製造方法
JP4086283B2 (ja) 2002-07-31 2008-05-14 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法
JP4453954B2 (ja) 2003-02-28 2010-04-21 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボの製造方法および該製造方法で製造された石英ガラスルツボ
KR100774606B1 (ko) * 2003-05-01 2007-11-09 신에쯔 세끼에이 가부시키가이샤 실리콘 단결정 인상용 석영유리 도가니 및 그 제조방법
DE602004029057D1 (de) 2003-05-30 2010-10-21 Heraeus Quarzglas Quarzglastiegel zum ziehen von siliciumeinkristall
JP4994568B2 (ja) * 2003-12-03 2012-08-08 コバレントマテリアル株式会社 シリカガラスルツボ
US8105457B2 (en) * 2003-12-22 2012-01-31 Asml Netherlands B.V. Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby
JP4781020B2 (ja) * 2005-06-29 2011-09-28 信越半導体株式会社 シリコン単結晶引き上げ用石英ガラスルツボおよびシリコン単結晶引き上げ用石英ガラスルツボの製造方法
JP4931106B2 (ja) * 2005-09-29 2012-05-16 コバレントマテリアル株式会社 シリカガラスルツボ
JP4651119B2 (ja) * 2007-02-22 2011-03-16 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼ
WO2009017071A1 (ja) * 2007-07-27 2009-02-05 Japan Super Quartz Corporation 石英ガラスルツボの製造方法
JP5273512B2 (ja) * 2007-10-25 2013-08-28 株式会社Ｓｕｍｃｏ 石英ガラスルツボとその製造方法および用途
JP5058138B2 (ja) 2008-12-09 2012-10-24 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
JP4975012B2 (ja) * 2008-12-29 2012-07-11 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法
EP2431338B1 (de) * 2009-04-28 2021-08-25 Shin-Etsu Quartz Products Co., Ltd. Silica-gefäss
WO2010137221A1 (ja) 2009-05-26 2010-12-02 信越石英株式会社 シリカ容器及びその製造方法
JP5047227B2 (ja) 2009-05-27 2012-10-10 ジャパンスーパークォーツ株式会社 シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置
JP4951040B2 (ja) 2009-08-05 2012-06-13 信越石英株式会社 シリカ容器及びその製造方法
US8739573B2 (en) 2009-08-12 2014-06-03 Japan Super Quartz Corporation Apparatus and method for manufacturing vitreous silica crucible
JP5453679B2 (ja) 2009-10-02 2014-03-26 株式会社Ｓｕｍｃｏ シリカガラスルツボの製造装置及びシリカガラスルツボの製造方法
WO2011074568A1 (ja) * 2009-12-14 2011-06-23 ジャパンスーパークォーツ株式会社 シリカガラスルツボおよびその製造方法
DE102010008162B4 (de) * 2010-02-16 2017-03-16 Heraeus Quarzglas Gmbh & Co. Kg Verfahren für die Herstellung von Quarzglas für einen Quarzglastiegel
JP5130323B2 (ja) * 2010-05-07 2013-01-30 信越石英株式会社 多結晶シリコンインゴット製造用角形シリカ容器及びその製造方法
JP5130334B2 (ja) * 2010-08-06 2013-01-30 信越石英株式会社 多結晶シリコンインゴット製造用角形シリカ容器並びに多孔質シリカ板体及びその製造方法
JP5226754B2 (ja) * 2010-10-08 2013-07-03 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼの製造方法
JP5605902B2 (ja) 2010-12-01 2014-10-15 株式会社Ｓｕｍｃｏ シリカガラスルツボの製造方法、シリカガラスルツボ
JP5500689B2 (ja) * 2010-12-03 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ
JP5714476B2 (ja) 2010-12-31 2015-05-07 株式会社Sumco シリカガラスルツボの製造方法
JP5781303B2 (ja) 2010-12-31 2015-09-16 株式会社Sumco シリカガラスルツボ製造方法およびシリカガラスルツボ製造装置
JP5777880B2 (ja) 2010-12-31 2015-09-09 株式会社Sumco シリカガラスルツボの製造方法
JP5749147B2 (ja) 2010-12-31 2015-07-15 株式会社Sumco シリカガラスルツボの製造方法
JP5777881B2 (ja) 2010-12-31 2015-09-09 株式会社Sumco シリカガラスルツボの製造方法
JP5762777B2 (ja) * 2011-02-01 2015-08-12 信越石英株式会社 多結晶シリコンインゴット製造用角形シリカ容器並びに多孔質シリカ板体及びその製造方法
JP5762784B2 (ja) * 2011-03-25 2015-08-12 信越石英株式会社 多結晶シリコンインゴット製造用角形シリカ容器並びに多孔質シリカ板体及びその製造方法
JP5762945B2 (ja) * 2011-12-30 2015-08-12 株式会社Sumco シリカガラスルツボ
US9754052B2 (en) * 2011-12-31 2017-09-05 Sumco Corporation Device for assisting with setting of manufacturing conditions for silica glass crucible, device for assisting with setting of manufacturing conditions for mold for manufacturing silica glass crucible, device for assisting with condition setting for pulling up monocrystalline silicon using silica glass crucible
JP5462423B1 (ja) * 2012-03-23 2014-04-02 信越石英株式会社 単結晶シリコン引き上げ用シリカ容器及びその製造方法
JP5668717B2 (ja) * 2012-04-19 2015-02-12 信越半導体株式会社 シリコン単結晶の製造方法
FR2993580B1 (fr) * 2012-07-23 2016-12-23 Univ Pierre Et Marie Curie (Paris 6) Procede de preparation d'une couche de quartz-alpha epitaxiee sur support solide, materiau obtenu et applications
JP5487259B2 (ja) * 2012-08-07 2014-05-07 信越石英株式会社 シリカ容器
US9587324B2 (en) * 2014-05-12 2017-03-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for processing a melt
JP2019167263A (ja) * 2018-03-23 2019-10-03 クアーズテック株式会社 石英ガラスルツボおよび石英ガラスルツボの製造方法
CN112779600B (zh) * 2019-11-08 2022-04-19 徐晓军 一种石英坩埚及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849519B2 (ja) * 1977-03-17 1983-11-04 東芝セラミツクス株式会社 シリコン単結晶引上用石英ガラスルツボ
DE2928089C3 (de) * 1979-07-12 1982-03-04 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung
JPS59129421A (ja) * 1983-01-14 1984-07-25 Toshiba Ceramics Co Ltd 半導体熱処理用部材
JPS59213697A (ja) * 1983-05-20 1984-12-03 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
JPS6144793A (ja) * 1984-08-09 1986-03-04 Toshiba Ceramics Co Ltd シリコン単結晶引上げ用石英ガラスルツボ
JPS6236974A (ja) * 1985-08-09 1987-02-17 Canon Inc デ−タ通信装置
US4632686A (en) * 1986-02-24 1986-12-30 Gte Products Corporation Method of manufacturing quartz glass crucibles with low bubble content
US4713104A (en) * 1986-03-31 1987-12-15 Gte Products Corporation Quartz glass crucibles
JPH068181B2 (ja) * 1987-03-26 1994-02-02 信越石英株式会社 半導体工業用石英ガラス製品
JPH01148783A (ja) * 1987-12-03 1989-06-12 Shin Etsu Handotai Co Ltd 単結晶引き上げ用石英ルツボ
JPH01148718A (ja) * 1987-12-03 1989-06-12 Shin Etsu Handotai Co Ltd 石英るつぼの製造方法
US4935046A (en) * 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
JPH01261293A (ja) * 1988-04-12 1989-10-18 Mitsubishi Metal Corp シリコン単結晶引上げ用石英ルツボ
JPH068237B2 (ja) * 1988-04-28 1994-02-02 三菱マテリアル株式会社 シリコン単結晶引上げ用石英ルツボ
US4979973A (en) * 1988-09-13 1990-12-25 Shin-Etsu Chemical Co., Ltd. Preparation of fused silica glass by hydrolysis of methyl silicate

Also Published As

Publication number Publication date
JP2933404B2 (ja) 1999-08-16
EP0463543B1 (de) 1995-08-30
DE69112505T2 (de) 1996-04-25
US5174801A (en) 1992-12-29
EP0463543A1 (de) 1992-01-02
JPH05105577A (ja) 1993-04-27

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Owner name: HERAEUS QUARZGLAS GMBH & CO. KG, 63450 HANAU, DE