FI911127A0 - Anordning foer framstaellning av enskilda silikonkristaller. - Google Patents

Anordning foer framstaellning av enskilda silikonkristaller.

Info

Publication number
FI911127A0
FI911127A0 FI911127A FI911127A FI911127A0 FI 911127 A0 FI911127 A0 FI 911127A0 FI 911127 A FI911127 A FI 911127A FI 911127 A FI911127 A FI 911127A FI 911127 A0 FI911127 A0 FI 911127A0
Authority
FI
Finland
Prior art keywords
enskilda
anordination
framstaellning
silicon crystal
silicon
Prior art date
Application number
FI911127A
Other languages
English (en)
Other versions
FI911127A (fi
Inventor
Yoshinobu Shima
Hiroshi Kamio
Makoto Suzuki
Original Assignee
Nippon Kokan Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kokan Kk filed Critical Nippon Kokan Kk
Publication of FI911127A0 publication Critical patent/FI911127A0/fi
Publication of FI911127A publication Critical patent/FI911127A/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FI911127A 1990-04-27 1991-03-06 Anordning foer framstaellning av enskilda silikonkristaller. FI911127A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2114523A JPH0825833B2 (ja) 1990-04-27 1990-04-27 シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
FI911127A0 true FI911127A0 (fi) 1991-03-06
FI911127A FI911127A (fi) 1991-10-28

Family

ID=14639887

Family Applications (1)

Application Number Title Priority Date Filing Date
FI911127A FI911127A (fi) 1990-04-27 1991-03-06 Anordning foer framstaellning av enskilda silikonkristaller.

Country Status (6)

Country Link
EP (1) EP0454111A1 (fi)
JP (1) JPH0825833B2 (fi)
KR (1) KR940004639B1 (fi)
CN (1) CN1055964A (fi)
FI (1) FI911127A (fi)
MY (1) MY104640A (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612477U (ja) * 1992-07-24 1994-02-18 三菱マテリアル株式会社 引上装置
JP3533416B2 (ja) * 1996-02-06 2004-05-31 三菱住友シリコン株式会社 単結晶引上装置
DE19917288C2 (de) * 1999-04-16 2001-06-28 Heraeus Quarzglas Quarzglas-Tiegel
DE10102126A1 (de) * 2001-01-18 2002-08-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium
JP4651119B2 (ja) * 2007-02-22 2011-03-16 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼ
JP5008695B2 (ja) * 2008-06-30 2012-08-22 ジャパンスーパークォーツ株式会社 石英ガラスルツボおよび石英ガラスルツボを用いたシリコン単結晶の引き上げ方法
JP5226754B2 (ja) * 2010-10-08 2013-07-03 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼの製造方法
CN103739567B (zh) * 2014-02-08 2016-09-21 山东省农药科学研究院 一种2-氯-5-氯甲基噻唑晶型及制备方法
US10060046B2 (en) * 2014-09-19 2018-08-28 Corner Star Limited Crystal puller for inhibiting melt contamination
JP7196913B2 (ja) * 2018-05-17 2022-12-27 株式会社Sumco 石英ルツボの透過率測定方法及び装置
JP7006636B2 (ja) * 2019-03-01 2022-01-24 株式会社Sumco シリコン単結晶製造装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0733305B2 (ja) * 1987-03-20 1995-04-12 三菱マテリアル株式会社 石英製二重ルツボの製造方法
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth

Also Published As

Publication number Publication date
FI911127A (fi) 1991-10-28
CN1055964A (zh) 1991-11-06
MY104640A (en) 1994-04-30
JPH0412088A (ja) 1992-01-16
EP0454111A1 (en) 1991-10-30
KR940004639B1 (ko) 1994-05-27
KR910018582A (ko) 1991-11-30
JPH0825833B2 (ja) 1996-03-13

Similar Documents

Publication Publication Date Title
FI923931A0 (fi) Anordning foer granskning av insidan av en foergrenad roerlinje.
FI913135A0 (fi) Syndiotaktiska kristallina propylenkopolymerer.
FI911704A (fi) Foerbehandling av fyllmedel med katjonisk ketendimer.
NO911724D0 (no) Anordning for fremstilling av foeringer.
FI911169A0 (fi) Foerfarande foer husintern tal- och datakommunikation med hjaelp av husets egna stroemfoersoerjaningsnaet.
DE69013631D1 (de) Einkristallsilizium.
FI911127A0 (fi) Anordning foer framstaellning av enskilda silikonkristaller.
FI912577A (fi) Framstaellning av polymerer av kolmonoxid med olefiniskt omaettade foereningar.
FI915460A (fi) Foerfarande foer framstaellning av dietrar.
FI900688A (fi) Anordning foer luftning av liggunderlag i sjuksaeng.
DE69114730D1 (de) Flüssigkristallverbindung.
FI923059A (fi) Silplaot med foerbaettrad effektivitet foer silning av fibermassa.
FI923866A (fi) Foerfarande foer framstaellning av 1-hydroxialkyl-1-nitro-5 imidazoler
FI910466A (fi) Foerfarande foer framstaellning av formade foeremaol med utmaerkt slaghaollfasthet.
FI915518A (fi) Foerfarande foer framstaellning av heterocykliskt substituerade piperazinooalkylbensoxazin- och -tiatzin foereningar med laekemedelsverkan.
FI923644A0 (fi) Blekning av lignocellulosamaterial med dioxiraner.
DE69107543D1 (de) Flüssigkristallverbindung.
FI913044A0 (fi) Foerfarande foer framstaellning av en supraledande multifilamenttraod av en med koppar stabiliserad nb-ti -legering.
FI906046A (fi) Spinnhjulsenhet foer fibrering av mineralsmaelta med hjaelp av centrifugalkraften.
DE69013583D1 (de) Acrylamidoaryloxifuntionelle Siliciumverbindungen.
FI905771A (fi) Anordning speciellt foer sanering av kloakroersystem med utnyttjande av tvaongsglidningsfoerfarande.
FI902748A (fi) Fiberartat kristallint naturmineral.
FI904918A0 (fi) Foerfarande foer framstaellning av baerande konstruktioner foer byggnader med pelar-balkstommar.
FI902576A0 (fi) Foerfarande foer framstaellning av betongelement foersedd med ytplatta.
FI900318A0 (fi) Foerfarande foer kristallisering av proteiner med tillhjaelp av hoegt tryck.

Legal Events

Date Code Title Description
FD Application lapsed