DE69032290D1 - Verfahren zur Herstellung einer amorphen Halbleiterschicht - Google Patents
Verfahren zur Herstellung einer amorphen HalbleiterschichtInfo
- Publication number
- DE69032290D1 DE69032290D1 DE69032290T DE69032290T DE69032290D1 DE 69032290 D1 DE69032290 D1 DE 69032290D1 DE 69032290 T DE69032290 T DE 69032290T DE 69032290 T DE69032290 T DE 69032290T DE 69032290 D1 DE69032290 D1 DE 69032290D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor layer
- amorphous semiconductor
- amorphous
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02535—Group 14 semiconducting materials including tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1163710A JPH0330319A (ja) | 1989-06-28 | 1989-06-28 | 非晶質半導体薄膜 |
JP1165403A JPH0332019A (ja) | 1989-06-29 | 1989-06-29 | 非晶質半導体の薄膜 |
JP1165402A JPH0332018A (ja) | 1989-06-29 | 1989-06-29 | 非晶質の半導体薄膜 |
JP1199259A JPH0364020A (ja) | 1989-08-02 | 1989-08-02 | 半導体の薄膜 |
JP1199260A JPH0364021A (ja) | 1989-08-02 | 1989-08-02 | 半導体の薄膜 |
JP1199258A JPH0364019A (ja) | 1989-08-02 | 1989-08-02 | 半導体薄膜 |
JP1200234A JPH0364909A (ja) | 1989-08-03 | 1989-08-03 | 半導体薄膜 |
JP1180390A JPH03217014A (ja) | 1990-01-23 | 1990-01-23 | 非晶質半導体薄膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69032290D1 true DE69032290D1 (de) | 1998-06-10 |
DE69032290T2 DE69032290T2 (de) | 1999-03-18 |
Family
ID=27571706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69032290T Expired - Fee Related DE69032290T2 (de) | 1989-06-28 | 1990-06-27 | Verfahren zur Herstellung einer amorphen Halbleiterschicht |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0407088B1 (de) |
AU (1) | AU631436B2 (de) |
CA (1) | CA2019923C (de) |
DE (1) | DE69032290T2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04253328A (ja) * | 1991-01-29 | 1992-09-09 | Hitachi Ltd | 表面処理装置 |
JP3197036B2 (ja) * | 1991-11-14 | 2001-08-13 | 鐘淵化学工業株式会社 | 結晶質シリコン薄膜の形成方法 |
DE102006043929B4 (de) * | 2006-09-14 | 2016-10-06 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von festen Polysilanmischungen |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3208086C2 (de) * | 1982-03-06 | 1983-12-22 | Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn | Verwendung einer Plasmakanone |
EG18056A (en) * | 1986-02-18 | 1991-11-30 | Solarex Corp | Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices |
DE68922054T2 (de) * | 1988-09-30 | 1995-08-03 | Kanegafuchi Chemical Ind | Verfahren zum Stabilisieren von amorphen Halbleitern. |
CA2014540A1 (en) * | 1989-04-18 | 1990-10-18 | Mitsui Toatsu Chemicals, Inc. | Method for forming semiconductor thin film |
-
1990
- 1990-06-27 EP EP90307023A patent/EP0407088B1/de not_active Expired - Lifetime
- 1990-06-27 DE DE69032290T patent/DE69032290T2/de not_active Expired - Fee Related
- 1990-06-27 AU AU57938/90A patent/AU631436B2/en not_active Expired - Fee Related
- 1990-06-27 CA CA002019923A patent/CA2019923C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0407088B1 (de) | 1998-05-06 |
CA2019923A1 (en) | 1990-12-28 |
EP0407088A1 (de) | 1991-01-09 |
DE69032290T2 (de) | 1999-03-18 |
AU5793890A (en) | 1991-01-03 |
CA2019923C (en) | 1993-12-14 |
AU631436B2 (en) | 1992-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69015216D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung. | |
DE69032773D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
DE69738608D1 (de) | Verfahren zur Herstellung einer Halbleiter-Dünnschicht | |
DE69123228D1 (de) | Verfahren zur Herstellung einer chemisch adsorbierten Schicht | |
DE69126586D1 (de) | Verfahren zur Herstellung einer Vorrichtung | |
DE68927353D1 (de) | Verfahren zur Herstellung einer Planarisolierung | |
DE69024246D1 (de) | Verfahren zur Herstellung einer Dünnschichthalbleiterlegierung | |
DE69126949D1 (de) | Verfahren zur Herstellung einer einkristallinen Schicht | |
DE69023558D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung. | |
DE68905556D1 (de) | Verfahren zur herstellung einer transparenten schicht. | |
DE68907507D1 (de) | Verfahren zur herstellung einer halbleitervorrichtung. | |
DE69434695D1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
DE69016955D1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung. | |
DE69028397D1 (de) | Verfahren zur herstellung einer halbleitervorrichtung | |
DE69410137D1 (de) | Verfahren zur Herstellung einer chalkopyrit-Halbleiterschicht | |
DE69520538T2 (de) | Verfahren zur Herstellung einer dünnen polykristallinen Halbleiterschicht | |
DE69030709D1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
DE69024731D1 (de) | Verfahren zur Herstellung einer plastikumhüllten Halbleiteranordnung | |
DE69031702D1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
DE3872430D1 (de) | Verfahren zur herstellung einer schicht aus supraleitendem material. | |
DE69032340D1 (de) | Verfahren zur Herstellung einer Halbleiterdünnschicht | |
DE59205665D1 (de) | Verfahren zur Herstellung einer Grabenstruktur in einem Substrat | |
DE3669806D1 (de) | Verfahren zur herstellung einer raeumlich periodischen halbleiter-schichtenfolge. | |
DE69118676D1 (de) | Verfahren zur herstellung einer dünnen schicht aus hochtemperatur-supraleiteroxyd | |
DE69031222D1 (de) | Verfahren zur herstellung einer 3-substituierten thio-3-cephemverbindung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |