DE69016393D1 - Halbleiterspeichervorrichtung und seine Herstellung. - Google Patents

Halbleiterspeichervorrichtung und seine Herstellung.

Info

Publication number
DE69016393D1
DE69016393D1 DE69016393T DE69016393T DE69016393D1 DE 69016393 D1 DE69016393 D1 DE 69016393D1 DE 69016393 T DE69016393 T DE 69016393T DE 69016393 T DE69016393 T DE 69016393T DE 69016393 D1 DE69016393 D1 DE 69016393D1
Authority
DE
Germany
Prior art keywords
manufacture
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016393T
Other languages
English (en)
Other versions
DE69016393T2 (de
Inventor
Alberto Oskar Adan
Koji Fujimoto
Jun Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69016393D1 publication Critical patent/DE69016393D1/de
Application granted granted Critical
Publication of DE69016393T2 publication Critical patent/DE69016393T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
DE69016393T 1989-11-24 1990-11-26 Halbleiterspeichervorrichtung und seine Herstellung. Expired - Fee Related DE69016393T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1306214A JPH0831534B2 (ja) 1989-11-24 1989-11-24 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69016393D1 true DE69016393D1 (de) 1995-03-09
DE69016393T2 DE69016393T2 (de) 1995-05-24

Family

ID=17954365

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016393T Expired - Fee Related DE69016393T2 (de) 1989-11-24 1990-11-26 Halbleiterspeichervorrichtung und seine Herstellung.

Country Status (5)

Country Link
US (1) US5057898A (de)
EP (1) EP0435457B1 (de)
JP (1) JPH0831534B2 (de)
KR (1) KR100195675B1 (de)
DE (1) DE69016393T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349206A (en) * 1988-11-10 1994-09-20 Seiko Epson Corporation Integrated memory circuit with high density load elements
US5801396A (en) * 1989-01-18 1998-09-01 Stmicroelectronics, Inc. Inverted field-effect device with polycrystalline silicon/germanium channel
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
US5452247A (en) * 1989-12-20 1995-09-19 Fujitsu Limited Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell
JP2524862B2 (ja) * 1990-05-01 1996-08-14 三菱電機株式会社 半導体記憶装置およびその製造方法
US5210429A (en) * 1990-06-29 1993-05-11 Sharp Kabushiki Kaisha Static RAM cell with conductive straps formed integrally with thin film transistor gates
JP2599495B2 (ja) * 1990-09-05 1997-04-09 シャープ株式会社 半導体装置の製造方法
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JPH04334054A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp 半導体装置、電界効果トランジスタおよびその製造方法
US5298782A (en) * 1991-06-03 1994-03-29 Sgs-Thomson Microelectronics, Inc. Stacked CMOS SRAM cell with polysilicon transistor load
US5212399A (en) * 1991-08-15 1993-05-18 Micron Technology, Inc. Low cost polysilicon active p-channel load
KR970007589B1 (ko) * 1991-09-13 1997-05-10 니뽄 덴끼 가부시끼가이샤 정적 메모리 장치
US5264385A (en) * 1991-12-09 1993-11-23 Texas Instruments Incorporated SRAM design with no moat-to-moat spacing
JP3270765B2 (ja) * 1992-03-03 2002-04-02 ローム株式会社 不揮発性記憶素子
JP2665644B2 (ja) * 1992-08-11 1997-10-22 三菱電機株式会社 半導体記憶装置
JP3813638B2 (ja) * 1993-01-14 2006-08-23 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
US5373170A (en) * 1993-03-15 1994-12-13 Motorola Inc. Semiconductor memory device having a compact symmetrical layout
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
RU2200351C2 (ru) * 1999-10-29 2003-03-10 Бубенников Александр Николаевич Сверхбыстродействующее сверхинтегрированное бимоп озу на лавинных транзисторах
KR20010085722A (ko) * 2000-02-29 2001-09-07 추후제출 반도체 물질상에서의 선택적인 레이저 어닐
US6462585B1 (en) 2001-02-20 2002-10-08 International Business Machines Corporation High performance CPL double-gate latch
US6650563B2 (en) * 2002-04-23 2003-11-18 Broadcom Corporation Compact and highly efficient DRAM cell
KR100647482B1 (ko) * 2004-09-16 2006-11-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US7547917B2 (en) * 2005-04-06 2009-06-16 International Business Machines Corporation Inverted multilayer semiconductor device assembly
US9490241B2 (en) * 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US10073943B2 (en) * 2015-09-25 2018-09-11 Nxp Usa, Inc. Gate length upsizing for low leakage standard cells
KR102528205B1 (ko) * 2018-06-26 2023-05-03 에스케이하이닉스 주식회사 매립 채널 어레이 트랜지스터를 포함하는 극저온 반도체 소자

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134461A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体記憶装置
US4768076A (en) * 1984-09-14 1988-08-30 Hitachi, Ltd. Recrystallized CMOS with different crystal planes
US4656731A (en) * 1985-08-05 1987-04-14 Texas Instruments Incorporated Method for fabricating stacked CMOS transistors with a self-aligned silicide process
JPH0746702B2 (ja) * 1986-08-01 1995-05-17 株式会社日立製作所 半導体記憶装置
JPS6353965A (ja) * 1986-08-25 1988-03-08 Hitachi Ltd 半導体集積回路装置
JPS63104374A (ja) * 1986-10-20 1988-05-09 Mitsubishi Electric Corp 半導体記憶装置
JPH01268064A (ja) * 1988-04-20 1989-10-25 Hitachi Ltd 多結晶シリコン薄膜の形成方法

Also Published As

Publication number Publication date
KR100195675B1 (ko) 1999-06-15
JPH0831534B2 (ja) 1996-03-27
JPH03165561A (ja) 1991-07-17
US5057898A (en) 1991-10-15
DE69016393T2 (de) 1995-05-24
EP0435457A1 (de) 1991-07-03
KR910010725A (ko) 1991-06-29
EP0435457B1 (de) 1995-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee